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Researcher profile

Xiaobo Sharon Hu

Xiaobo Sharon Hu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Hardware ArchitectureEmerging Technologiescond-mat.mes-hallcond-mat.mtrl-sciMachine LearningNeural and Evolutionary Computing

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Published work

6 published item(s)

preprint2022arXiv

COSIME: FeFET based Associative Memory for In-Memory Cosine Similarity Search

In a number of machine learning models, an input query is searched across the trained class vectors to find the closest feature class vector in cosine similarity metric. However, performing the cosine similarities between the vectors in Von-Neumann machines involves a large number of multiplications, Euclidean normalizations and division operations, thus incurring heavy hardware energy and latency overheads. Moreover, due to the memory wall problem that presents in the conventional architecture, frequent cosine similarity-based searches (CSSs) over the class vectors requires a lot of data movements, limiting the throughput and efficiency of the system. To overcome the aforementioned challenges, this paper introduces COSIME, an general in-memory associative memory (AM) engine based on the ferroelectric FET (FeFET) device for efficient CSS. By leveraging the one-transistor AND gate function of FeFET devices, current-based translinear analog circuit and winner-take-all (WTA) circuitry, COSIME can realize parallel in-memory CSS across all the entries in a memory block, and output the closest word to the input query in cosine similarity metric. Evaluation results at the array level suggest that the proposed COSIME design achieves 333X and 90.5X latency and energy improvements, respectively, and realizes better classification accuracy when compared with an AM design implementing approximated CSS. The proposed in-memory computing fabric is evaluated for an HDC problem, showcasing that COSIME can achieve on average 47.1X and 98.5X speedup and energy efficiency improvements compared with an GPU implementation.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

On the Reliability of Computing-in-Memory Accelerators for Deep Neural Networks

Computing-in-memory with emerging non-volatile memory (nvCiM) is shown to be a promising candidate for accelerating deep neural networks (DNNs) with high energy efficiency. However, most non-volatile memory (NVM) devices suffer from reliability issues, resulting in a difference between actual data involved in the nvCiM computation and the weight value trained in the data center. Thus, models actually deployed on nvCiM platforms achieve lower accuracy than their counterparts trained on the conventional hardware (e.g., GPUs). In this chapter, we first offer a brief introduction to the opportunities and challenges of nvCiM DNN accelerators and then show the properties of different types of NVM devices. We then introduce the general architecture of nvCiM DNN accelerators. After that, we discuss the source of unreliability and how to efficiently model their impact. Finally, we introduce representative works that mitigate the impact of device variations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Logic Compatible High-Performance Ferroelectric Transistor Memory

Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limited write endurance and large read-after-write latency due to early IL breakdown and charge trapping and detrapping at the interface. We demonstrate low voltage, high speed memory operation with high write endurance using an IL-free back-end-of-line (BEOL) compatible FeFET. We fabricate IL-free FeFETs with 28nm channel length and 126nm width under a thermal budget <400C by integrating 5nm thick Hf0.5Zr0.5O2 gate stack with amorphous Indium Tungsten Oxide (IWO) semiconductor channel. We report 1.2V memory window and read current window of 10^5 for program and erase, write latency of 20ns with +/-2V write pulses, read-after-write latency <200ns, write endurance cycles exceeding 5x10^10 and 2-bit/cell programming capability. Array-level analysis establishes IL-free BEOL FeFET as a promising candidate for logic-compatible high-performance on-chip buffer memory and multi-bit weight cell for compute-in-memory accelerators.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Device-Circuit-Architecture Co-Exploration for Computing-in-Memory Neural Accelerators

Co-exploration of neural architectures and hardware design is promising to simultaneously optimize network accuracy and hardware efficiency. However, state-of-the-art neural architecture search algorithms for the co-exploration are dedicated for the conventional von-neumann computing architecture, whose performance is heavily limited by the well-known memory wall. In this paper, we are the first to bring the computing-in-memory architecture, which can easily transcend the memory wall, to interplay with the neural architecture search, aiming to find the most efficient neural architectures with high network accuracy and maximized hardware efficiency. Such a novel combination makes opportunities to boost performance, but also brings a bunch of challenges. The design space spans across multiple layers from device type, circuit topology to neural architecture. In addition, the performance may degrade in the presence of device variation. To address these challenges, we propose a cross-layer exploration framework, namely NACIM, which jointly explores device, circuit and architecture design space and takes device variation into consideration to find the most robust neural architectures. Experimental results demonstrate that NACIM can find the robust neural network with 0.45% accuracy loss in the presence of device variation, compared with a 76.44% loss from the state-of-the-art NAS without consideration of variation; in addition, NACIM achieves an energy efficiency up to 16.3 TOPs/W, 3.17X higher than the state-of-the-art NAS.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Eva-CiM: A System-Level Performance and Energy Evaluation Framework for Computing-in-Memory Architectures

Computing-in-Memory (CiM) architectures aim to reduce costly data transfers by performing arithmetic and logic operations in memory and hence relieve the pressure due to the memory wall. However, determining whether a given workload can really benefit from CiM, which memory hierarchy and what device technology should be adopted by a CiM architecture requires in-depth study that is not only time consuming but also demands significant expertise in architectures and compilers. This paper presents an energy evaluation framework, Eva-CiM, for systems based on CiM architectures. Eva-CiM encompasses a multi-level (from device to architecture) comprehensive tool chain by leveraging existing modeling and simulation tools such as GEM5, McPAT [2] and DESTINY [3]. To support high-confidence prediction, rapid design space exploration and ease of use, Eva-CiM introduces several novel modeling/analysis approaches including models for capturing memory access and dependency-aware ISA traces, and for quantifying interactions between the host CPU and CiM modules. Eva-CiM can readily produce energy estimates of the entire system for a given program, a processor architecture, and the CiM array and technology specifications. Eva-CiM is validated by comparing with DESTINY [3] and [4], and enables findings including practical contributions from CiM-supported accesses, CiM-sensitive benchmarking as well as the pros and cons of increased memory size for CiM. Eva-CiM also enables exploration over different configurations and device technologies, showing 1.3-6.0X energy improvement for SRAM and 2.0-7.9X for FeFET-RAM, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Addressable Memories (CAMs) are a form of IMC that performs parallel searches for matched entries over a memory array for a given input query. CAMs are widely used for data-centric applications that involve pattern matching and search functionality. To accommodate the ever expanding data, it is attractive to resort to analog CAM for memory density improvement. However, the digital CAM design nowadays based on standard CMOS or emerging nonvolatile memories (e.g., resistive storage devices) is already challenging due to area, power, and cost penalties. Thus, it can be extremely expensive to achieve analog CAM with those technologies due to added cell components. As such, we propose, for the first time, a universal compact FeFET based CAM design, FeCAM, with search and storage functionality enabled in digital and analog domain simultaneously. By exploiting the multi-level-cell (MLC) states of FeFET, FeCAM can store and search inputs in either digital or analog domain. We perform a device-circuit co-design of the proposed FeCAM and validate its functionality and performance using an experimentally calibrated FeFET model. Circuit level simulation results demonstrate that FeCAM can either store continuous matching ranges or encode 3-bit data in a single CAM cell. When compared with the existing digital CMOS based CAM approaches, FeCAM is found to improve both memory density by 22.4X and energy saving by 8.6/3.2X for analog/digital modes, respectively. In the CAM-related application, our evaluations show that FeCAM can achieve 60.5X/23.1X saving in area/search energy compared with conventional CMOS based CAMs.

0 citations0 reviewsNo code linkedOpen access