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Researcher profile

Michael Niemier

Michael Niemier contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Emerging Technologiescond-mat.mes-hallcond-mat.mtrl-scieess.SPHardware Architecture

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Published work

5 published item(s)

preprint2022arXiv

COSIME: FeFET based Associative Memory for In-Memory Cosine Similarity Search

In a number of machine learning models, an input query is searched across the trained class vectors to find the closest feature class vector in cosine similarity metric. However, performing the cosine similarities between the vectors in Von-Neumann machines involves a large number of multiplications, Euclidean normalizations and division operations, thus incurring heavy hardware energy and latency overheads. Moreover, due to the memory wall problem that presents in the conventional architecture, frequent cosine similarity-based searches (CSSs) over the class vectors requires a lot of data movements, limiting the throughput and efficiency of the system. To overcome the aforementioned challenges, this paper introduces COSIME, an general in-memory associative memory (AM) engine based on the ferroelectric FET (FeFET) device for efficient CSS. By leveraging the one-transistor AND gate function of FeFET devices, current-based translinear analog circuit and winner-take-all (WTA) circuitry, COSIME can realize parallel in-memory CSS across all the entries in a memory block, and output the closest word to the input query in cosine similarity metric. Evaluation results at the array level suggest that the proposed COSIME design achieves 333X and 90.5X latency and energy improvements, respectively, and realizes better classification accuracy when compared with an AM design implementing approximated CSS. The proposed in-memory computing fabric is evaluated for an HDC problem, showcasing that COSIME can achieve on average 47.1X and 98.5X speedup and energy efficiency improvements compared with an GPU implementation.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Logic Compatible High-Performance Ferroelectric Transistor Memory

Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limited write endurance and large read-after-write latency due to early IL breakdown and charge trapping and detrapping at the interface. We demonstrate low voltage, high speed memory operation with high write endurance using an IL-free back-end-of-line (BEOL) compatible FeFET. We fabricate IL-free FeFETs with 28nm channel length and 126nm width under a thermal budget <400C by integrating 5nm thick Hf0.5Zr0.5O2 gate stack with amorphous Indium Tungsten Oxide (IWO) semiconductor channel. We report 1.2V memory window and read current window of 10^5 for program and erase, write latency of 20ns with +/-2V write pulses, read-after-write latency <200ns, write endurance cycles exceeding 5x10^10 and 2-bit/cell programming capability. Array-level analysis establishes IL-free BEOL FeFET as a promising candidate for logic-compatible high-performance on-chip buffer memory and multi-bit weight cell for compute-in-memory accelerators.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Device Non-Ideality Resilient Approach for Mapping Neural Networks to Crossbar Arrays

We propose a technology-independent method, referred to as adjacent connection matrix (ACM), to efficiently map signed weight matrices to non-negative crossbar arrays. When compared to same-hardware-overhead mapping methods, using ACM leads to improvements of up to 20% in training accuracy for ResNet-20 with the CIFAR-10 dataset when training with 5-bit precision crossbar arrays or lower. When compared with strategies that use two elements to represent a weight, ACM achieves comparable training accuracies, while also offering area and read energy reductions of 2.3x and 7x, respectively. ACM also has a mild regularization effect that improves inference accuracy in crossbar arrays without any retraining or costly device/variation-aware training.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference

An analog synapse circuit based on ferroelectric-metal field-effect transistors is proposed, that offers 6-bit weight precision. The circuit is comprised of volatile least significant bits (LSBs) used solely during training, and non-volatile most significant bits (MSBs) used for both training and inference. The design works at a 1.8V logic-compatible voltage, provides 10^10 endurance cycles, and requires only 250ps update pulses. A variant of LeNet trained with the proposed synapse achieves 98.2% accuracy on MNIST, which is only 0.4% lower than an ideal implementation of the same network with the same bit precision. Furthermore, the proposed synapse offers improvements of up to 26% in area, 44.8% in leakage power, 16.7% in LSB update pulse duration, and two orders of magnitude in endurance cycles, when compared to state-of-the-art hybrid synaptic circuits. Our proposed synapse can be extended to an 8-bit design, enabling a VGG-like network to achieve 88.8% accuracy on CIFAR-10 (only 0.8% lower than an ideal implementation of the same network).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Addressable Memories (CAMs) are a form of IMC that performs parallel searches for matched entries over a memory array for a given input query. CAMs are widely used for data-centric applications that involve pattern matching and search functionality. To accommodate the ever expanding data, it is attractive to resort to analog CAM for memory density improvement. However, the digital CAM design nowadays based on standard CMOS or emerging nonvolatile memories (e.g., resistive storage devices) is already challenging due to area, power, and cost penalties. Thus, it can be extremely expensive to achieve analog CAM with those technologies due to added cell components. As such, we propose, for the first time, a universal compact FeFET based CAM design, FeCAM, with search and storage functionality enabled in digital and analog domain simultaneously. By exploiting the multi-level-cell (MLC) states of FeFET, FeCAM can store and search inputs in either digital or analog domain. We perform a device-circuit co-design of the proposed FeCAM and validate its functionality and performance using an experimentally calibrated FeFET model. Circuit level simulation results demonstrate that FeCAM can either store continuous matching ranges or encode 3-bit data in a single CAM cell. When compared with the existing digital CMOS based CAM approaches, FeCAM is found to improve both memory density by 22.4X and energy saving by 8.6/3.2X for analog/digital modes, respectively. In the CAM-related application, our evaluations show that FeCAM can achieve 60.5X/23.1X saving in area/search energy compared with conventional CMOS based CAMs.

0 citations0 reviewsNo code linkedOpen access