Researcher profile

Wenli Xu

Wenli Xu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

CUBES Phase A design overview -- The Cassegrain U-Band Efficient Spectrograph for the Very Large Telescope

We present the baseline conceptual design of the Cassegrain U-Band Efficient Spectrograph (CUBES) for the Very Large Telescope. CUBES will provide unprecedented sensitivity for spectroscopy on a 8 - 10 m class telescope in the ground ultraviolet (UV), spanning a bandwidth of > 100 nm that starts at 300 nm, the shortest wavelength accessible from the ground. The design has been optimized for end-to-end efficiency and provides a spectral resolving power of R > 20000, that will unlock a broad range of new topics across solar system, Galactic and extraglactic astronomy. The design also features a second, lower-resolution (R \sim 7000) mode and has the option of a fiberlink to the UVES instrument for simultaneous observations at longer wavelengths. Here we present the optical, mechanical and software design of the various subsystems of the instrument after the Phase A study of the project. We discuss the expected performances for the layout choices and highlight some of the performance trade-offs considered to best meet the instrument top-level requirements. We also introduce the model-based system engineering approach used to organize and manage the project activities and interfaces, in the context that it is increasingly necessary to integrate such tools in the development of complex astronomical projects.

preprint2016arXiv

Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 635 nm with responsivity as 446 mA/W and detectivity as 5.9*10^13 Jones (Jones = cm Hz1/2 W-1), respectively. Employing interface design by inserting h-BN and photo-induced doping by covering Si quantum dots on the device, the responsivity is increased to 419 mA/W for incident light of 635 nm. Distinctly, attributing to the low dark current of the MoS2/h-BN/GaAs sandwich structure based on the self-driven operation condition, the detectivity shows extremely high value of 1.9*10^14 Jones for incident light of 635 nm, which is higher than all the reported values of the MoS2 based photodetectors. Further investigations reveal that the MoS2/GaAs based photodetectors have response speed with the typical rise/fall time as 17/31 μs. The photodetectors are stable while sealed with polymethyl methacrylate after storage in air for one month. These results imply that monolayer MoS2/GaAs heterojunction may have great potential for practical applications as high performance self-driven photodetectors.