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Researcher profile

Shisheng Lin

Shisheng Lin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phphysics.opticscond-mat.mes-hallphysics.ins-det

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Published work

5 published item(s)

preprint2022arXiv

Infrared Radiation of Graphene Electrothermal Film Triggered Alpha and Theta Brainwaves

The alpha and theta frequency brainwave activity in Electroencephalogram (EEG) signal has been correlated with attention, inhibitory processes, memory, perceptual abilities, and sleep. The enhanced alpha and theta brainwave activity may bring positive behavioral modifications such as promoting creativity and a quick sleep. Herein, we discover that infrared radiation from multilayer graphene electrothermal film can obviously promote the appearance of alpha and theta brainwave in human mind. In particular, the occurrence frequency of the alpha and theta waves in EEG can be effectively enhanced up to 2.3 and 3.0 times, respectively. And the duration time of the alpha and theta waves in EEG can also be effectively extended. The mechanism may be attributed to the efficient infrared radiation caused by graphene mainly focused on the range from 7 to 14 micron, coinciding with the radiation wavelength of natural human body, which can be effectively absorbed by the human skin and speed up the blood microcirculation and metabolism. The comparative effect of different working temperature and heating materials such as water, Cu and even monolayer graphene are systematically investigated, indicating the infrared radiation from the multilayer graphene electrothermal film at 50 degrees has the largest enhancement effect of alpha and theta brainwaves. The multilayer graphene film electrical heater represents a convenient and surprising way for triggering the alpha and theta brainwaves, which has many potential applications in the area of enlarged health cerements.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Self-driven water or polarized liquid based ultraviolet photodetector

Traditionally, photodetector is based on solid materials constructed PN junction, which needs many delicate growth technologies. Herein, we demonstrate the feasibility of polarized liquid triggered photodetector where the liquid is sandwiched between P-type or N-type semiconductor which can be chosen freely according to the requirement of the specific response wavelength. Under the multiple cycles of optical switching, transient photo-polarized current, steady state photo-polarized current and depolarized current are repeatably observed in semiconductor/polar liquids/semiconductor structure. The responsivity and specific detectivity of transient photo-polarized current in N-GaN/water/P-GaN reach values of 104.2 mA/W and 4.4*10^12 Jones at 365 nm, and 52.8 mA/W and 1.9*10^12 Jones at 254 nm illumination under zero voltage bias. We anticipate that our research will have a profound impact on integrating self-powered photodetector with freely selectable wavelength bands.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

DC electricity generation from dynamic polarized water-semiconductor interface

Liquid electricity generator and hydrovoltaic technology have received numerous attentions, which can be divided into horizontal movement generator and vertical movement generator. The horizontal movement generator is limited for powering the integrated and miniaturized energy chip as the current output direction is depending on the moving direction of the water droplet, which means a sustainable and continuous direct-current (DC) electricity output can be hardly achieved because of the film of limited length. On the other hand, the existing vertical movement generators include triboelectricity or humidity gradient-based liquid electricity generator, where the liquid or water resource must be sustainably supplied to ensure continuous current output. Herein, we have designed an integratable vertical generator by sandwiching water droplets with semiconductor and metal, such as graphene or aluminum. This generator, named as polarized liquid molecular generator (PLMG), directly converts the lateral kinetic energy of water droplet into vertical DC electricity with an output voltage of up to ~1.0 V from the dynamic water-semiconductor interface. The fundamental discovery of PLMG is related to the non-symmetric structure of liquid molecules, such as water and alcohols, which can be polarized under the guidance of built-in field caused by the Fermi level difference between metal and semiconductor, while the symmetric liquid molecules cannot produce any electricity on the opposite. Integratable PLMG with a large output power of ~90 nW and voltage of ~2.7 V has been demonstrated, meanwhile its small internal resistance of ~250 kilohm takes a huge advantage in resistance matching with the impedance of electron components. The PLMG shows potential application value in the Internet of Things (IoTs) after proper miniaturization and integration.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct-Current Generator Based on Dynamic Water-Semiconductor Junction with Polarized Water as Moving Dielectric Medium

There is a rising prospective in harvesting energy from water droplets, as microscale energy is required for the distributed sensors in the interconnected human society. However, achieving a sustainable direct-current generating device from water flow is rarely reported, and the quantum polarization principle of the water molecular remains uncovered. Herein, we propose a dynamic water-semiconductor junction with moving water sandwiched between two semiconductors as a moving dielectric medium, which outputs a sustainable direct-current voltage of 0.3 V and current of 0.64 uA with low internal resistance of 390 kilohm. The sustainable direct-current electricity is originating from the dynamic water polarization process in water-semiconductor junction, in which water molecules are continuously polarized and depolarized driven by the mechanical force and Fermi level difference, during the movement of the water on silicon. We further demonstrated an encapsulated portable power-generating device with simple structure and continuous direct-current voltage, which exhibits its promising potential application in the field of wearable electronic generators.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 635 nm with responsivity as 446 mA/W and detectivity as 5.9*10^13 Jones (Jones = cm Hz1/2 W-1), respectively. Employing interface design by inserting h-BN and photo-induced doping by covering Si quantum dots on the device, the responsivity is increased to 419 mA/W for incident light of 635 nm. Distinctly, attributing to the low dark current of the MoS2/h-BN/GaAs sandwich structure based on the self-driven operation condition, the detectivity shows extremely high value of 1.9*10^14 Jones for incident light of 635 nm, which is higher than all the reported values of the MoS2 based photodetectors. Further investigations reveal that the MoS2/GaAs based photodetectors have response speed with the typical rise/fall time as 17/31 μs. The photodetectors are stable while sealed with polymethyl methacrylate after storage in air for one month. These results imply that monolayer MoS2/GaAs heterojunction may have great potential for practical applications as high performance self-driven photodetectors.

0 citations0 reviewsNo code linkedOpen access