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Shisheng Lin

Shisheng Lin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mes-hallphysics.app-phcond-mat.mtrl-scinlin.PSphysics.ins-det

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Published work

13 published item(s)

preprint2022arXiv

Infrared Radiation of Graphene Electrothermal Film Triggered Alpha and Theta Brainwaves

The alpha and theta frequency brainwave activity in Electroencephalogram (EEG) signal has been correlated with attention, inhibitory processes, memory, perceptual abilities, and sleep. The enhanced alpha and theta brainwave activity may bring positive behavioral modifications such as promoting creativity and a quick sleep. Herein, we discover that infrared radiation from multilayer graphene electrothermal film can obviously promote the appearance of alpha and theta brainwave in human mind. In particular, the occurrence frequency of the alpha and theta waves in EEG can be effectively enhanced up to 2.3 and 3.0 times, respectively. And the duration time of the alpha and theta waves in EEG can also be effectively extended. The mechanism may be attributed to the efficient infrared radiation caused by graphene mainly focused on the range from 7 to 14 micron, coinciding with the radiation wavelength of natural human body, which can be effectively absorbed by the human skin and speed up the blood microcirculation and metabolism. The comparative effect of different working temperature and heating materials such as water, Cu and even monolayer graphene are systematically investigated, indicating the infrared radiation from the multilayer graphene electrothermal film at 50 degrees has the largest enhancement effect of alpha and theta brainwaves. The multilayer graphene film electrical heater represents a convenient and surprising way for triggering the alpha and theta brainwaves, which has many potential applications in the area of enlarged health cerements.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Self-driven water or polarized liquid based ultraviolet photodetector

Traditionally, photodetector is based on solid materials constructed PN junction, which needs many delicate growth technologies. Herein, we demonstrate the feasibility of polarized liquid triggered photodetector where the liquid is sandwiched between P-type or N-type semiconductor which can be chosen freely according to the requirement of the specific response wavelength. Under the multiple cycles of optical switching, transient photo-polarized current, steady state photo-polarized current and depolarized current are repeatably observed in semiconductor/polar liquids/semiconductor structure. The responsivity and specific detectivity of transient photo-polarized current in N-GaN/water/P-GaN reach values of 104.2 mA/W and 4.4*10^12 Jones at 365 nm, and 52.8 mA/W and 1.9*10^12 Jones at 254 nm illumination under zero voltage bias. We anticipate that our research will have a profound impact on integrating self-powered photodetector with freely selectable wavelength bands.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

DC electricity generation from dynamic polarized water-semiconductor interface

Liquid electricity generator and hydrovoltaic technology have received numerous attentions, which can be divided into horizontal movement generator and vertical movement generator. The horizontal movement generator is limited for powering the integrated and miniaturized energy chip as the current output direction is depending on the moving direction of the water droplet, which means a sustainable and continuous direct-current (DC) electricity output can be hardly achieved because of the film of limited length. On the other hand, the existing vertical movement generators include triboelectricity or humidity gradient-based liquid electricity generator, where the liquid or water resource must be sustainably supplied to ensure continuous current output. Herein, we have designed an integratable vertical generator by sandwiching water droplets with semiconductor and metal, such as graphene or aluminum. This generator, named as polarized liquid molecular generator (PLMG), directly converts the lateral kinetic energy of water droplet into vertical DC electricity with an output voltage of up to ~1.0 V from the dynamic water-semiconductor interface. The fundamental discovery of PLMG is related to the non-symmetric structure of liquid molecules, such as water and alcohols, which can be polarized under the guidance of built-in field caused by the Fermi level difference between metal and semiconductor, while the symmetric liquid molecules cannot produce any electricity on the opposite. Integratable PLMG with a large output power of ~90 nW and voltage of ~2.7 V has been demonstrated, meanwhile its small internal resistance of ~250 kilohm takes a huge advantage in resistance matching with the impedance of electron components. The PLMG shows potential application value in the Internet of Things (IoTs) after proper miniaturization and integration.

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preprint2020arXiv

Direct-Current Generator Based on Dynamic Water-Semiconductor Junction with Polarized Water as Moving Dielectric Medium

There is a rising prospective in harvesting energy from water droplets, as microscale energy is required for the distributed sensors in the interconnected human society. However, achieving a sustainable direct-current generating device from water flow is rarely reported, and the quantum polarization principle of the water molecular remains uncovered. Herein, we propose a dynamic water-semiconductor junction with moving water sandwiched between two semiconductors as a moving dielectric medium, which outputs a sustainable direct-current voltage of 0.3 V and current of 0.64 uA with low internal resistance of 390 kilohm. The sustainable direct-current electricity is originating from the dynamic water polarization process in water-semiconductor junction, in which water molecules are continuously polarized and depolarized driven by the mechanical force and Fermi level difference, during the movement of the water on silicon. We further demonstrated an encapsulated portable power-generating device with simple structure and continuous direct-current voltage, which exhibits its promising potential application in the field of wearable electronic generators.

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preprint2016arXiv

Design of Ultra-compact Graphene-based Superscatterers

The energy-momentum dispersion relation is a fundamental property of plasmonic systems. In this paper, we show that the method of dispersion engineering can be used for the design of ultra-compact graphene-based superscatterers. Based on the Bohr model, the dispersion relation of the equivalent planar waveguide is engineered to enhance the scattering cross section of a dielectric cylinder. Bohr conditions with different orders are fulfilled in multiple dispersion curves at the same resonant frequency. Thus the resonance peaks from the first and second order scattering terms are overlapped in the deepsubwavelength scale by delicately tuning the gap thickness between two graphene layers. Using this ultra-compact graphene-based superscatterer, the scattering cross section of the dielectric cylinder can be enhanced by five orders of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Graphene induced mode bifurcation at low input power

We study analytically the plasmonic modes in the graphene-coated dielectric nanowire, based on the explicit form of nonlinear surface conductivity of graphene. The propagation constants of different plasmonic modes can be tuned by the input power at the order of a few tenths of mW. The lower and upper mode bifurcation branches are connected at the limitation value of the input power. Moreover, due to the nonlinearity of graphene, the dispersion curves of plasmonic modes at different input powers form an energy band, which is in sharp contrast with the single dispersion curve in the limit of zero input power.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 635 nm with responsivity as 446 mA/W and detectivity as 5.9*10^13 Jones (Jones = cm Hz1/2 W-1), respectively. Employing interface design by inserting h-BN and photo-induced doping by covering Si quantum dots on the device, the responsivity is increased to 419 mA/W for incident light of 635 nm. Distinctly, attributing to the low dark current of the MoS2/h-BN/GaAs sandwich structure based on the self-driven operation condition, the detectivity shows extremely high value of 1.9*10^14 Jones for incident light of 635 nm, which is higher than all the reported values of the MoS2 based photodetectors. Further investigations reveal that the MoS2/GaAs based photodetectors have response speed with the typical rise/fall time as 17/31 μs. The photodetectors are stable while sealed with polymethyl methacrylate after storage in air for one month. These results imply that monolayer MoS2/GaAs heterojunction may have great potential for practical applications as high performance self-driven photodetectors.

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preprint2015arXiv

Atomically thin spherical shell-shaped superscatterers based on Bohr model

Graphene monolayers can be used for atomically thin three-dimensional shell-shaped superscatterer designs. Due to the excitation of the first-order resonance of transverse magnetic (TM) graphene plasmons, the scattering cross section of the bare subwavelength dielectric particle is enhanced significantly by five orders of magnitude. The superscattering phenomenon can be intuitively understood and interpreted with Bohr model. Besides, based on the analysis of Bohr model, it is shown that contrary to the TM case, superscattering is hard to occur by exciting the resonance of transverse electric (TE) graphene plasmons due to their poor field confinements.

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preprint2015arXiv

High performance solar cells based on graphene-GaAs heterostructures

The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications, GaAs is superior to silicon as it has a direct band gap of 1.42 eV and its electron mobility is six times of that of silicon. However, graphene/GaAs solar cell has been rarely explored. Herein, we report graphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5% without and with anti-reflection layer on graphene, respectively. The Eta of 15.5% is higher than the state of art efficiency for graphene/Si system (14.5%). Furthermore, our calculation points out Eta of 25.8% can be reached by reasonably optimizing the open circuit voltage, junction ideality factor, resistance of graphene and metal/graphene contact. This research strongly support graphene/GaAs hetero-structure solar cell have great potential for practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells

Graphene has attracted increasing interests due to its remarkable properties, however, the zero band gap of monolayer graphene might limit its further electronic and optoelectronic applications. Herein, we have successfully synthesized monolayer silicon-doped graphene (SiG) in large area by chemical vapor deposition method. Raman spectroscopy and X-ray photoelectron spectroscopy measurements evidence silicon atoms are doped into graphene lattice with the doping level of 3.4 at%. The electrical measurement based on field effect transistor indicates that the band gap of graphene has been opened by silicon doping, which is around 0. 28 eV supported by the first-principle calculations, and the ultraviolet photoelectron spectroscopy demonstrates the work function of SiG is 0.13 eV larger than that of graphene. Moreover, the SiG/GaAs heterostructure solar cells show an improved power conversion efficiency of 33.7% in average than that of graphene/GaAs solar cells, which are attributed to the increased barrier height and improved interface quality. Our results suggest silicon doping can effectively engineer the band gap of monolayer graphene and SiG has great potential in optoelectronic device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping

We report a type of solar cells based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is one-atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.1%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by transport, photoluminescence and quantum efficiency measurements. This work demonstrates a feasible way of designing solar cells with incorporating one dimensional and two dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical Tuning of Surface Plasmon Polariton Propagation in Graphene-Nanowire Hybrid Structure

We demonstrate a dynamic surface plasmonic modulation of graphene-nanowire hybrid structures in visible light range, which was thought to be a tough task for graphene based field effect transistor modulator previously. Static modulation depth of as high as 0.07 dB/μm has been achieved experimentally. Carefully simulation indicates the strongly focused electromagnetic field and dramatically enhanced electric field at the interface between a silver NW and a graphene sheet are key roles for bringing the optical response of the device to the visible range. Furthermore, the modulation behaviors near the Dirac point of monolayer graphene and the singularity of gap-induced bilayer graphene are investigated.

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preprint2012arXiv

Optical and electronic properties of two dimensional graphitic silicon carbide

Optical and electronic properties of two dimensional few layers graphitic silicon carbide (GSiC), in particular monolayer and bilayer, are investigated by density functional theory and found different from that of graphene and silicene. Monolayer GSiC has direct bandgap while few layers exhibit indirect bandgap. The bandgap of monolayer GSiC can be tuned by an in-plane strain. Properties of bilayer GSiC are extremely sensitive to the interlayer distance. These predictions promise that monolayer GSiC could be a remarkable candidate for novel type of light-emitting diodes utilizing its unique optical properties distinct from graphene, silicene and few layers GSiC.

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