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Wen-Qi Mu

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2022arXiv

Correlation-driven threefold topological phase transition in monolayer $\mathrm{OsBr_2}$

Spin-orbit coupling (SOC) combined with electronic correlation can induce topological phase transition, producing novel electronic states. Here, we investigate the impact of SOC combined with correlation effects on physical properties of monolayer $\mathrm{OsBr_2}$ , based on first-principles calculations with generalized gradient approximation plus $U$ (GGA+ $U$ ) approach. With intrinsic out-of-plane magnetic anisotropy, $\mathrm{OsBr_2}$ undergoes threefold topological phase transition with increasing $U$ , and valley-polarized quantum anomalous Hall insulator (VQAHI) to half-valley-metal (HVM) to ferrovalley insulator (FVI) to HVM to VQAHI to HVM to FVI transitions can be induced. These topological phase transitions are connected with sign-reversible Berry curvature and band inversion between $d_{xy}$ / $d_{x^2-y^2}$ and $d_{z^2}$ orbitals. Due to $\bar{6}m2$ symmetry, piezoelectric polarization of $\mathrm{OsBr_2}$ is confined along the in-plane armchair direction, and only one $d_{11}$ is independent. For a given material, the correlation strength should be fixed, and $\mathrm{OsBr_2}$ may be a piezoelectric VQAHI (PVQAHI), piezoelectric HVM (PHVM) or piezoelectric FVI (PFVI). The valley polarization can be flipped by reversing the magnetization of Os atoms, and the ferrovalley (FV) and nontrivial topological properties will be suppressed by manipulating out-of-plane magnetization to in-plane one. In considered reasonable $U$ range, the estimated Curie temperatures all are higher than room temperature. Our findings provide a comprehensive understanding on possible electronic states of $\mathrm{OsBr_2}$ , and confirm that strong SOC combined with electronic correlation can induce multiple quantum phase transition.

preprint2022arXiv

Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response

The combination of piezoelectricity with nontrivial topological insulating phase in two-dimensional (2D) systems, namely piezoelectric quantum spin Hall insulator (PQSHI), is intriguing for exploring novel topological states toward the development of high-speed and dissipationless electronic devices. In this work, we predict a PQSHI Janus monolayer VCClBr constructed from $\mathrm{VCCl_2}$ , which is dynamically, mechanically and thermally stable. In the absence of spin orbital coupling (SOC), VCClBr is a narrow gap semiconductor with gap value of 57 meV, which is different from Dirac semimetal $\mathrm{VCCl_2}$ . The gap of VCClBr is due to built-in electric field caused by asymmetrical upper and lower atomic layers, which is further confirmed by external-electric-field induced gap in $\mathrm{VCCl_2}$ . When including SOC, the gap of VCClBr is improved to 76 meV, which is larger than the thermal energy of room temperature (25 meV). The VCClBr is a 2D topological insulator (TI), which is confirmed by $Z_2$ topological invariant and nontrivial one-dimensional edge states. It is proved that the nontrivial topological properties of VCClBr are robust against strain (biaxial and uniaxial cases) and external electric field. Due to broken horizontal mirror symmetry, only out-of-plane piezoelectric response can be observed, when biaxial or uniaxial in-plane strain is applied. The predicted piezoelectric strain coefficients $d_{31}$ and $d_{32}$ are -0.425 pm/V and -0.219 pm/V, which are higher than or compared with ones of many 2D materials. Finally, another two Janus monolayer VCFBr and VCFCl (dynamically unstable) are constructed, and they are still PQSHIs. Moreover, their $d_{31}$ and $d_{32}$ are higher than ones of VCClBr, and the $d_{31}$ (absolute value) of VCFBr is larger than one.

preprint2022arXiv

Strain effects on topological and valley properties of Janus monolayer $\mathrm{VSiGeN_4}$

Strain is an effective method to tune the electronic properties of two-dimension (2D) materials, and can induce novel phase transition. Recently, 2D $\mathrm{MA_2Z_4}$ family materials are of interest because of their emerging topological, magnetic and superconducting properties. Here, we investigate the impact of strain effects ( $a/a_0$ :0.96 $\sim$ 1.04) on the physical properties of Janus monolayer $\mathrm{VSiGeN_4}$ as a derivative of $\mathrm{VSi_2N_4}$ or $\mathrm{VGe_2N_4}$ , which possesses dynamical, mechanical and thermal stabilities. For out-of-plane magnetic anisotropy, with increasing strain, $\mathrm{VSiGeN_4}$ undergoes transition between ferrovalley semiconductor (FVS), half-valley-metal (HVM), valley-polarized quantum anomalous Hall insulator (VQAHI), HVM and FVS. These imply twice topological phase transitions, which are related with sign-reversible Berry curvature and band inversion between $d_{xy}$ + $d_{x^2-y^2}$ and $d_{z^2}$ orbitals for K or -K valley. The band inversion also leads to transformation of valley splitting strength between valence and conduction bands. However, for in-plane magnetic anisotropy, no special quantum anomalous Hall (QAH) states and valley polarization exist within the considered strain range. The actual magnetic anisotropy energy (MAE) shows no special QAH and HVM states in monolayer $\mathrm{VSiGeN_4}$ . Fortunately, these can be easily achieved by external magnetic field, which adjusts the easy magnetization axis of $\mathrm{VSiGeN_4}$ from in-plane one to out-of-plane one. Our findings shed light on how strain can be employed to engineer the electronic states of $\mathrm{VSiGeN_4}$ , which may open new perspectives for multifunctional quantum devices in valleytronics and spintronics.

preprint2022arXiv

Valley-polarized quantum anomalous Hall insulator in monolayer $\mathrm{RuBr_2}$

Coexistence of intrinsic ferrovalley (FV) and nontrivial band topology attracts intensive interest both for its fundamental physics and for its potential applications, namely valley-polarized quantum anomalous Hall insulator (VQAHI). Here, based on first-principles calculations by using generalized gradient approximation plus $U$ (GGA+ $U$ ) approach, the VQAHI induced by electronic correlation or strain can occur in monolayer $\mathrm{RuBr_2}$ . For perpendicular magnetic anisotropy (PMA), the ferrovalley (FV) to half-valley-metal (HVM) to quantum anomalous Hall (QAH) to HVM to FV transitions can be driven by increasing electron correlation $U$ . However, there are no special QAH states and valley polarization for in-plane magnetic anisotropy. By calculating actual magnetic anisotropy energy (MAE), the VQAHI indeed can exist between two HVM states due to PMA, a unit Chern number/a chiral edge state and spontaneous valley polarization. The increasing $U$ can induce VQAHI, which can be explained by sign-reversible Berry curvature or band inversion between $d_{xy}$ / $d_{x^2-y^2}$ and $d_{z^2}$ orbitals. Even though the real $U$ falls outside the range, the VQAHI can be achieved by strain. Taking $U$ $=$ 2.25 eV as a concrete case, the monolayer $\mathrm{RuBr_2}$ can change from a common ferromagentic (FM) semiconductor to VQAHI under about 0.985 compressive strain. It is noted that the edge states of VQAHI are chiral-spin-valley locking, which can achieve complete spin and valley polarizations for low-dissipation electronics devices. Both energy band gap and valley splitting of VQAHI in monolayer $\mathrm{RuBr_2}$ are higher than the thermal energy of room temperature (25 meV), which is key at room temperature for device applications.

preprint2021arXiv

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdCl_2}$ monolayer

Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic anisotropy (PMA), valence band maximum (VBM)/conduction band minimum (CBM) at valley points, strong ferromagnetic (FM) coupling and proper valley splitting. In this work, the monolayer $\mathrm{GdCl_2}$ is proposed as a potential candidate material for valleytronic applications by the first-principles calculations. It is proved that monolayer $\mathrm{GdCl_2}$ is a FM semiconductor with the easy axis along out of plane direction and strong FM coupling. A spontaneous valley polarization with a valley splitting of 42.3 meV is produced due to its intrinsic ferromagnetism and spin orbital coupling (SOC). Although the VBM of unstrained monolayer $\mathrm{GdCl_2}$ is away from valley points, a very small compressive strain (about 1\%) can make VBM move to valley points. We propose a possible way to realize anomalous valley Hall effect in monolayer $\mathrm{GdCl_2}$ by piezoelectric effect, not an external electric field, namely piezoelectric anomalous valley Hall effect (PAVHE). This phenomenon could be classified as piezo-valleytronics, being similar to piezotronics and piezophototronics. The only independent piezoelectric strain coefficient $d_{11}$ is -2.708 pm/V, which is comparable to one of classical bulk piezoelectric material $α$ -quartz ( $d_{11}$ =2.3 pm/V). The biaxial in-plane strain and electronic correlation effects are considered to confirm the reliability of our results. Finally, the monolayer $\mathrm{GdF_2}$ is predicted to be a ferrovalley material with dynamic and mechanical stabilities, PMA, VBM at valley points, strong FM coupling, valley splitting of 47.6 meV, and $d_{11}$ of 0.584 pm/V.

preprint2021arXiv

Coexistence of intrinsic piezoelectricity and nontrivial band topology in monolayer InXO (X=Se and Te)

The combination of piezoelectricity with other unique properties (like topological insulating phase and intrinsic ferromagnetism) in two-dimensional (2D) materials is much worthy of intensive study. In this work, the piezoelectric properties of 2D topological insulators InXO (X=Se and Te) from monolayer InX (X=Se and Te) with double-side oxygen functionalization are studied by density functional theory (DFT). The large piezoelectric strain coefficients (e.g. $d_{11}$ =-13.02 pm/V for InSeO and $d_{11}$ =-9.64 pm/V for InTeO) are predicted, which are comparable and even higher than ones of many other familiar 2D materials. Moreover, we propose two strategies to enhance piezoelectric response of monolayer InXO (X=Se and Te). Firstly, the biaxial strain (0.94-1.06) is applied, and the $d_{11}$ (absolute value) is increased by 53\%/56\% for monolayer InSeO/InTeO at 1.06 strain, which is due to increased $e_{11}$ (absolute value) and reduced $C_{11}-C_{12}$ . In considered strain range, InXO (X=Se and Te) monolayers are always 2D topological insulators, which confirm the coexistence of piezoelectricity and nontrivial band topology. Secondly, a Janus monolayer $\mathrm{In_2SeTeO_2}$ is designed by replacing the top Se/Te atomic layer in monolayer InSeO/InTeO with Te/Se atoms, which is dynamically and mechanically stable. More excitingly, Janus monolayer $\mathrm{In_2SeTeO_2}$ is also a 2D topological insulator with sizeable bulk gap up to 0.158 eV, confirming the coexistence of intrinsic piezoelectricity and topological nature. The calculated $d_{11}$ is -9.9 pm/V, which is in the middle of ones of InSeO and InTeO monolayers.

preprint2021arXiv

Piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer $\mathrm{SrAlGaSe_4}$

The realization of multifunctional two-dimensional (2D) materials is fundamentally intriguing, such as combination of piezoelectricity with topological insulating phase or ferromagnetism. In this work, a Janus monolayer $\mathrm{SrAlGaSe_4}$ is built from 2D $\mathrm{MA_2Z_4}$ family with dynamic, mechanical and thermal stabilities, which is piezoelectric due to lacking inversion symmetry. The unstrained $\mathrm{SrAlGaSe_4}$ monolayer is a narrow gap normal insulator (NI) with spin orbital coupling (SOC). However, the NI to topological insulator (TI) phase transition can be induced by the biaxial strain, and a piezoelectric quantum spin Hall insulator (PQSHI) can be achieved. More excitingly, the phase transformation point is only about 1.01 tensile strain, and nontrivial band topology can hold until considered 1.16 tensile strain. Moreover, a Rashba spin splitting in the conduction bands can exit in PQSHI due to the absence of a horizontal mirror symmetry and the presence of SOC. For monolayer $\mathrm{SrAlGaSe_4}$ , both in-plane and much weak out-of-plane piezoelectric polarizations can be induced with a uniaxial strain applied. The calculated piezoelectric strain coefficients $d_{11}$ and $d_{31}$ of monolayer $\mathrm{SrAlGaSe_4}$ are -1.865 pm/V and -0.068 pm/V at 1.06 tensile strain as a representative TI. In fact, many PQSHIs can be realized from 2D $\mathrm{MA_2Z_4}$ family. To confirm that, similar to $\mathrm{SrAlGaSe_4}$ , the coexistence of piezoelectricity and topological orders can be realized by strain (about 1.04 tensile strain) in the $\mathrm{CaAlGaSe_4}$ monolayer. Our works suggest that Janus monolayer $\mathrm{SrAlGaSe_4}$ is a pure 2D system for PQSHI, enabling future studies exploring the interplay between piezoelectricity and topological orders, which can lead to novel applications in electronics and spintronics.

preprint2020arXiv

Biaxial strain enhanced piezoelectric properties in monolayer g- $\mathrm{C_3N_4}$

Graphite-like carbon nitride (g- $\mathrm{C_3N_4}$ ) is considered as a promising candidate for energy materials. In this work, the biaxial strain (-4\%-4\%) effects on piezoelectric properties of g- $\mathrm{C_3N_4}$ monolayer are studied by density functional theory (DFT). It is found that the increasing strain can reduce the elastic coefficient $C_{11}$ - $C_{12}$ , and increases piezoelectric stress coefficient $e_{11}$ , which lead to the enhanced piezoelectric strain coefficient $d_{11}$ . Compared to unstrained one, strain of 4\% can raise the $d_{11}$ by about 330\%. From -4\% to 4\%, strain can induce the improved ionic contribution to $e_{11}$ of g- $\mathrm{C_3N_4}$ , and almost unchanged electronic contribution, which is different from $\mathrm{MoS_2}$ monolayer (the enhanced electronic contribution and reduced ionic contribution). To prohibit current leakage, a piezoelectric material should be a semiconductor, and g- $\mathrm{C_3N_4}$ monolayer is always a semiconductor in considered strain range. Calculated results show that the gap increases from compressive strain to tensile one. At 4\% strain, the first and second valence bands cross, which has important effect on transition dipole moment (TDM). Our works provide a strategy to achieve enhanced piezoelectric effect of g- $\mathrm{C_3N_4}$ monolayer, which gives a useful guidence for developing efficient energy conversion devices.

preprint2020arXiv

Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer $\mathrm{VSi_2P_4}$

The septuple-atomic-layer $\mathrm{VSi_2P_4}$ with the same structure of experimentally synthesized $\mathrm{MoSi_2N_4}$ is predicted to be a spin-gapless semiconductor (SGS). In this work, the biaxial strain is applied to tune electronic properties of $\mathrm{VSi_2P_4}$ , and it spans a wide range of properties upon the increasing strain from ferromagnetic metal (FMM) to SGS to ferromagnetic semiconductor (FMS) to SGS to ferromagnetic half-metal (FMHM). Due to broken inversion symmetry, the coexistence of ferromagnetism and piezoelectricity can be achieved in FMS $\mathrm{VSi_2P_4}$ with strain range of 0\% to 4\%. The calculated piezoelectric strain coefficients $d_{11}$ for 1\%, 2\% and 3\% strains are 4.61 pm/V, 4.94 pm/V and 5.27 pm/V, respectively, which are greater than or close to a typical value of 5 pm/V for bulk piezoelectric materials. Finally, similar to $\mathrm{VSi_2P_4}$ , the coexistence of piezoelectricity and ferromagnetism can be realized by strain in the $\mathrm{VSi_2N_4}$ monolayer. Our works show that $\mathrm{VSi_2P_4}$ in FMS phase with intrinsic piezoelectric properties can have potential applications in spin electronic devices.

preprint2020arXiv

Intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W)

Motived by experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020})), the intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W) are studied by density functional theory (DFT). Among the six monolayers, the $\mathrm{CrSi_2N_4}$ has the best piezoelectric strain coefficient $d_{11}$ of 1.24 pm/V, and the second is 1.15 pm/V for $\mathrm{MoSi_2N_4}$ . Taking $\mathrm{MoSi_2N_4}$ as a example, strain engineering is applied to improve $d_{11}$ . It is found that tensile biaxial strain can enhance $d_{11}$ of $\mathrm{MoSi_2N_4}$ , and the $d_{11}$ at 4\% can improve by 107\% with respect to unstrained one. By replacing the N by P or As in $\mathrm{MoSi_2N_4}$ , the $d_{11}$ can be raise substantially. For $\mathrm{MoSi_2P_4}$ and $\mathrm{MoSi_2As_4}$ , the $d_{11}$ is as high as 4.93 pm/V and 6.23 pm/V, which is mainly due to smaller $C_{11}-C_{12}$ and very small minus or positive ionic contribution to piezoelectric stress coefficient $e_{11}$ with respect to $\mathrm{MoSi_2N_4}$ . The discovery of this piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ enables active sensing, actuating and new electronic components for nanoscale devices, and is recommended for experimental exploration.

preprint2020arXiv

Predicted septuple-atomic-layer Janus $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

Janus two-dimensional (2D) materials have attracted much attention due to possessing unique properties caused by their out-of-plane asymmetry, which have been achieved in many 2D families. In this work, the Janus monolayers are predicted in new 2D $\mathrm{MA_2Z_4}$ family by means of first-principles calculations, $\mathrm{MoSi_2N_4}$ and $\mathrm{WSi_2N_4}$ of which have been synthesized in experiment(\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}). The predicted $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers exhibit dynamic, thermodynamical and mechanical stability, and they are indirect band-gap semiconductors. The inclusion of spin-orbit coupling (SOC) gives rise to the Rashba-type spin splitting, which is observed in the valence bands, being different from common conduction bands. Calculated results show valley polarization at the edge of the conduction bands due to SOC together with inversion symmetry breaking. It is found that $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers have high electron mobilities. Both in-plane and much weak out-of-plane piezoelectric polarizations can be observed, when a uniaxial strain in the basal plane is applied. The values of piezoelectric strain coefficient $d_{11}$ of the Janus $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers fall between those of the $\mathrm{MSi_2N_4}$ (M=Mo and W) and $\mathrm{MGe_2N_4}$ (M=Mo and W) monolayers, as expected. It is proved that strain can tune the positions of valence band maximum (VBM) and conduction band minimum (CBM), and enhance the the strength of conduction bands convergence caused by compressive strain. It is also found that tensile biaxial strain can enhance $d_{11}$ of $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers, and the compressive strain can improve the $d_{31}$ (absolute values).

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Wen-Qi Mu

Research overview

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11 publications

Correlation-driven threefold topological phase transition in monolayer $\mathrm{OsBr_2}$

Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response

Strain effects on topological and valley properties of Janus monolayer $\mathrm{VSiGeN_4}$

Valley-polarized quantum anomalous Hall insulator in monolayer $\mathrm{RuBr_2}$

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdCl_2}$ monolayer

Coexistence of intrinsic piezoelectricity and nontrivial band topology in monolayer InXO (X=Se and Te)

Piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer $\mathrm{SrAlGaSe_4}$

Biaxial strain enhanced piezoelectric properties in monolayer g- $\mathrm{C_3N_4}$

Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer $\mathrm{VSi_2P_4}$

Intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W)

Predicted septuple-atomic-layer Janus $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

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Wen-Qi Mu

Research overview

Is this your work?

11 publications

Correlation-driven threefold topological phase transition in monolayer OsBr2\mathrm{OsBr_2}OsBr2​

Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response

Strain effects on topological and valley properties of Janus monolayer VSiGeN4\mathrm{VSiGeN_4}VSiGeN4​

Valley-polarized quantum anomalous Hall insulator in monolayer RuBr2\mathrm{RuBr_2}RuBr2​

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in GdCl2\mathrm{GdCl_2}GdCl2​ monolayer

Coexistence of intrinsic piezoelectricity and nontrivial band topology in monolayer InXO (X=Se and Te)

Piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4\mathrm{SrAlGaSe_4}SrAlGaSe4​

Biaxial strain enhanced piezoelectric properties in monolayer g-C3N4\mathrm{C_3N_4}C3​N4​

Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4\mathrm{VSi_2P_4}VSi2​P4​

Intrinsic piezoelectricity in monolayer XSi2N4\mathrm{XSi_2N_4}XSi2​N4​ (X=Ti, Zr, Hf, Cr, Mo and W)

Predicted septuple-atomic-layer Janus MSiGeN4\mathrm{MSiGeN_4}MSiGeN4​ (M=Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

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Correlation-driven threefold topological phase transition in monolayer $\mathrm{OsBr_2}$

Strain effects on topological and valley properties of Janus monolayer $\mathrm{VSiGeN_4}$

Valley-polarized quantum anomalous Hall insulator in monolayer $\mathrm{RuBr_2}$

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdCl_2}$ monolayer

Piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer $\mathrm{SrAlGaSe_4}$

Biaxial strain enhanced piezoelectric properties in monolayer g- $\mathrm{C_3N_4}$

Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer $\mathrm{VSi_2P_4}$

Intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W)

Predicted septuple-atomic-layer Janus $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities