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San-Dong Guo

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cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph

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preprint2026arXiv

Hidden half-metallicity

Half-metals, featuring ideal 100\% spin polarization, are widely regarded as key materials for spintronic and quantum technologies; however, the half-metallic state is intrinsically fragile, as it relies on a delicate balance of exchange splitting and band filling and is therefore highly susceptible to disorder, external perturbations, and thermal effects. Here we introduce the concept of hidden half-metallicity, whereby the global electronic structure of a symmetry-enforced net-zero-magnetization magnet is non-half-metallic, while each of its two symmetry-related sectors is individually half-metallic, enabling robust 100\% spin polarization through a layer degree of freedom. Crucially, the vanishing net magnetization of the entire system suppresses stray fields and magnetic instabilities, rendering the half-metallic functionality inherently more robust than in conventional ferromagnetic half-metals. Using first-principles calculations, we demonstrate this mechanism in a $PT$ -symmetric bilayer $\mathrm{CrS_2}$ , and further show that an external electric field drives the system into a seemingly forbidden fully compensated ferrimagnetic metal in which hidden half-metallicity persists. Finally, we briefly confirm the realization of hidden half-metallicity in altermagnets, establishing a general paradigm for stabilizing half-metallic behavior by embedding it in symmetry-protected hidden sectors and opening a new route toward the design and discovery of unprecedented half-metallic phases.

preprint2022arXiv

Cataloguing MoSi $_2$ N $_4$ and WSi $_2$ N $_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications

Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi $_2$ N $_4$ and WSi $_2$ N $_4$ monolayers provides a compelling material platform for developing high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi $_2$ N $_4$ and WSi $_2$ N $_4$ -based [(Mo,W)Si $_2$ N $_4$ ] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi $_2$ N $_4$ /(InSe, WSe $_2$ ) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si $_2$ N $_4$ vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si $_2$ N $_4$ / $α_2$ -(Mo,W)Ge $_2$ P $_4$ vdWHs. Our findings unravel the enormous potential of (Mo,W)Si $_2$ N $_4$ vdWHs in designing ultimately compact excitonic solar cell device technology.

preprint2022arXiv

Correlation-driven threefold topological phase transition in monolayer $\mathrm{OsBr_2}$

Spin-orbit coupling (SOC) combined with electronic correlation can induce topological phase transition, producing novel electronic states. Here, we investigate the impact of SOC combined with correlation effects on physical properties of monolayer $\mathrm{OsBr_2}$ , based on first-principles calculations with generalized gradient approximation plus $U$ (GGA+ $U$ ) approach. With intrinsic out-of-plane magnetic anisotropy, $\mathrm{OsBr_2}$ undergoes threefold topological phase transition with increasing $U$ , and valley-polarized quantum anomalous Hall insulator (VQAHI) to half-valley-metal (HVM) to ferrovalley insulator (FVI) to HVM to VQAHI to HVM to FVI transitions can be induced. These topological phase transitions are connected with sign-reversible Berry curvature and band inversion between $d_{xy}$ / $d_{x^2-y^2}$ and $d_{z^2}$ orbitals. Due to $\bar{6}m2$ symmetry, piezoelectric polarization of $\mathrm{OsBr_2}$ is confined along the in-plane armchair direction, and only one $d_{11}$ is independent. For a given material, the correlation strength should be fixed, and $\mathrm{OsBr_2}$ may be a piezoelectric VQAHI (PVQAHI), piezoelectric HVM (PHVM) or piezoelectric FVI (PFVI). The valley polarization can be flipped by reversing the magnetization of Os atoms, and the ferrovalley (FV) and nontrivial topological properties will be suppressed by manipulating out-of-plane magnetization to in-plane one. In considered reasonable $U$ range, the estimated Curie temperatures all are higher than room temperature. Our findings provide a comprehensive understanding on possible electronic states of $\mathrm{OsBr_2}$ , and confirm that strong SOC combined with electronic correlation can induce multiple quantum phase transition.

preprint2022arXiv

Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization

Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA) transformation. Through the first-principle calculations, our idea is illustrated by a concrete example of $\mathrm{VSi_2P_4}$ monolayer. The increasing electric field can induce a transition of MA from in-plane to out-of-plane by changing magnetic anisotropy energy (MAE) from negative to positive value, which is mainly due to increasing magnetocrystalline anisotropy (MCA) energy. The out-of-plane magnetization is in favour of spontaneous valley polarization in $\mathrm{VSi_2P_4}$ . Within considered electric field range, $\mathrm{VSi_2P_4}$ is always ferromagnetic (FM) ground state. In a certain range of electric field, the coexistence of semiconductor and out-of-plane magnetization makes $\mathrm{VSi_2P_4}$ become a true ferrovalley (FV) material. The anomalous valley Hall effect (AVHE) can be observed under in-plane and out-of-plane electrical field in $\mathrm{VSi_2P_4}$ . Our works pave the way to design the ferrovalley material by electric field.

preprint2022arXiv

Huge out-of-plane piezoelectric response in ferromagnetic monolayer NiClI

The combination of piezoelectricity and ferromagnetic (FM) order in a two-dimensional (2D) material, namely 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for novel device applications. Here, we predict an in-plane FM semiconductor Janus monolayer NiClI with considerably large magnetic anisotropy energy (MAE) of 1.439 meV, exhibiting dynamic, mechanical and thermal stabilities. The NiClI monolayer possesses larger in-plane piezoelectricity ( $d_{11}$ $=$ 5.21 pm/V) comparable to that of $\mathrm{MoS_2}$ . Furthermore, NiClI has huge out-of-plane piezoelectricity ( $d_{31}$ $=$ 1.89 pm/V), which is highly desirable for ultrathin piezoelectric device application. It is proved that huge out-of-plane piezoelectricity is robust against electronic correlation, which confirms reliability of huge $d_{31}$ . Finally, being analogous to NiClI, PFM with large out-of-plane piezoelectricity can also be achieved in the Janus monolayers of NiClBr and NiBrI, with the predicted $d_{31}$ of 0.73 pm/V and 1.15 pm/V, respectively. The predicted huge out-of-plane piezoelectric response makes Janus monolayer NiClI a good platform for multifunctional semiconductor spintronic applications, which is also compatible with the bottom/top gate technologies of conventional semiconductor nanoelectronic devices.

preprint2022arXiv

Out-of-plane high-temperature ferromagnetic monolayer CrSCl with large vertical piezoelectric response

For two-dimensional (2D) material, piezoelectric ferromagnetism (PFM) with large out-of-plane piezoresponse is highly desirable for multifunctional ultrathin piezoelectric device application. Here, we predict that Janus monolayer CrSCl is an out-of-plane ferromagnetic (FM) semiconductor with large vertical piezoelectric response and high Curie temperature. The predicted out-of-plane piezoelectric strain coefficient $d_{31}$ is -1.58 pm/V, which is higher than ones of most 2D materials (compare absolute values of $d_{31}$ ). The large out-of-plane piezoelectricity is robust against electronic correlation and biaxial strain, confirming reliability of large $d_{31}$ . Calculated results show that tensile strain is conducive to high Curie temperature, large magnetic anisotropy energy (MAE) and large $d_{31}$ . Finally, by comparing $d_{31}$ of CrYX (Y=S; X=Cl, Br I) and CrYX (Y=O; X=F, Cl, Br), we conclude that the size of $d_{31}$ is positively related to electronegativity difference of X and Y atoms. Such findings can provide valuable guidelines for designing 2D piezoelectric materials with large vertical piezoelectric response.

preprint2022arXiv

Piezoelectric ferromagnetism in Janus monolayer YBrI: a first-principle prediction

Coexistence of intrinsic ferromagnetism and piezoelectricity, namely piezoelectric ferromagnetism (PFM), is crucial to advance multifunctional spintronic technologies. In this work, we demonstrate that Janus monolayer YBrI is a PFM, which is dynamically, mechanically and thermally stable. Electronic correlation effects on physical properties of YBrI are investigated by using generalized gradient approximation plus $U$ (GGA+ $U$ ) approach. For out-of-plane magnetic anisotropy, YBrI is a ferrovalley (FV) material, and the valley splitting is larger than 82 meV in considered $U$ range. The anomalous valley Hall effect (AVHE) can be achieved under an in-plane electric field. However, for in-plane magnetic anisotropy, YBrI is a common ferromagnetic (FM) semiconductor. When considering intrinsic magnetic anisotropy, the easy axis of YBrI is always in-plane with magnetic anisotropy energy (MAE) from 0.309 meV to 0.237 meV ( $U$ =0.0 eV to 3.0 eV). However, the magnetization can be adjusted from the in-plane to off-plane direction by external magnetic field, and then lead to the occurrence of valley polarization. Moreover, missing centrosymmetry along with mirror symmetry breaking results in both in-plane and out-of-plane piezoelectricity in YBrI monolayer. At a typical $U$ =2.0 eV, the $d_{11}$ is predicted to be -5.61 pm/V, which is higher than or compared with ones of other two-dimensional (2D) known materials. The electronic and piezoelectric properties of YBrI can be effectively tuned by applying a biaxial strain. For example, tensile strain can enhance valley splitting and $d_{11}$ (absolute value). The predicted Curie temperature of YBrI is higher than those of experimentally synthesized 2D ferromagnetic materials $\mathrm{CrI_3}$ and $\mathrm{Cr_2Ge_2Te_6}$ .

preprint2022arXiv

Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response

The combination of piezoelectricity with nontrivial topological insulating phase in two-dimensional (2D) systems, namely piezoelectric quantum spin Hall insulator (PQSHI), is intriguing for exploring novel topological states toward the development of high-speed and dissipationless electronic devices. In this work, we predict a PQSHI Janus monolayer VCClBr constructed from $\mathrm{VCCl_2}$ , which is dynamically, mechanically and thermally stable. In the absence of spin orbital coupling (SOC), VCClBr is a narrow gap semiconductor with gap value of 57 meV, which is different from Dirac semimetal $\mathrm{VCCl_2}$ . The gap of VCClBr is due to built-in electric field caused by asymmetrical upper and lower atomic layers, which is further confirmed by external-electric-field induced gap in $\mathrm{VCCl_2}$ . When including SOC, the gap of VCClBr is improved to 76 meV, which is larger than the thermal energy of room temperature (25 meV). The VCClBr is a 2D topological insulator (TI), which is confirmed by $Z_2$ topological invariant and nontrivial one-dimensional edge states. It is proved that the nontrivial topological properties of VCClBr are robust against strain (biaxial and uniaxial cases) and external electric field. Due to broken horizontal mirror symmetry, only out-of-plane piezoelectric response can be observed, when biaxial or uniaxial in-plane strain is applied. The predicted piezoelectric strain coefficients $d_{31}$ and $d_{32}$ are -0.425 pm/V and -0.219 pm/V, which are higher than or compared with ones of many 2D materials. Finally, another two Janus monolayer VCFBr and VCFCl (dynamically unstable) are constructed, and they are still PQSHIs. Moreover, their $d_{31}$ and $d_{32}$ are higher than ones of VCClBr, and the $d_{31}$ (absolute value) of VCFBr is larger than one.

preprint2022arXiv

Strain effects on topological and valley properties of Janus monolayer $\mathrm{VSiGeN_4}$

Strain is an effective method to tune the electronic properties of two-dimension (2D) materials, and can induce novel phase transition. Recently, 2D $\mathrm{MA_2Z_4}$ family materials are of interest because of their emerging topological, magnetic and superconducting properties. Here, we investigate the impact of strain effects ( $a/a_0$ :0.96 $\sim$ 1.04) on the physical properties of Janus monolayer $\mathrm{VSiGeN_4}$ as a derivative of $\mathrm{VSi_2N_4}$ or $\mathrm{VGe_2N_4}$ , which possesses dynamical, mechanical and thermal stabilities. For out-of-plane magnetic anisotropy, with increasing strain, $\mathrm{VSiGeN_4}$ undergoes transition between ferrovalley semiconductor (FVS), half-valley-metal (HVM), valley-polarized quantum anomalous Hall insulator (VQAHI), HVM and FVS. These imply twice topological phase transitions, which are related with sign-reversible Berry curvature and band inversion between $d_{xy}$ + $d_{x^2-y^2}$ and $d_{z^2}$ orbitals for K or -K valley. The band inversion also leads to transformation of valley splitting strength between valence and conduction bands. However, for in-plane magnetic anisotropy, no special quantum anomalous Hall (QAH) states and valley polarization exist within the considered strain range. The actual magnetic anisotropy energy (MAE) shows no special QAH and HVM states in monolayer $\mathrm{VSiGeN_4}$ . Fortunately, these can be easily achieved by external magnetic field, which adjusts the easy magnetization axis of $\mathrm{VSiGeN_4}$ from in-plane one to out-of-plane one. Our findings shed light on how strain can be employed to engineer the electronic states of $\mathrm{VSiGeN_4}$ , which may open new perspectives for multifunctional quantum devices in valleytronics and spintronics.

preprint2022arXiv

Valley-polarized quantum anomalous Hall insulator in monolayer $\mathrm{RuBr_2}$

Coexistence of intrinsic ferrovalley (FV) and nontrivial band topology attracts intensive interest both for its fundamental physics and for its potential applications, namely valley-polarized quantum anomalous Hall insulator (VQAHI). Here, based on first-principles calculations by using generalized gradient approximation plus $U$ (GGA+ $U$ ) approach, the VQAHI induced by electronic correlation or strain can occur in monolayer $\mathrm{RuBr_2}$ . For perpendicular magnetic anisotropy (PMA), the ferrovalley (FV) to half-valley-metal (HVM) to quantum anomalous Hall (QAH) to HVM to FV transitions can be driven by increasing electron correlation $U$ . However, there are no special QAH states and valley polarization for in-plane magnetic anisotropy. By calculating actual magnetic anisotropy energy (MAE), the VQAHI indeed can exist between two HVM states due to PMA, a unit Chern number/a chiral edge state and spontaneous valley polarization. The increasing $U$ can induce VQAHI, which can be explained by sign-reversible Berry curvature or band inversion between $d_{xy}$ / $d_{x^2-y^2}$ and $d_{z^2}$ orbitals. Even though the real $U$ falls outside the range, the VQAHI can be achieved by strain. Taking $U$ $=$ 2.25 eV as a concrete case, the monolayer $\mathrm{RuBr_2}$ can change from a common ferromagentic (FM) semiconductor to VQAHI under about 0.985 compressive strain. It is noted that the edge states of VQAHI are chiral-spin-valley locking, which can achieve complete spin and valley polarizations for low-dissipation electronics devices. Both energy band gap and valley splitting of VQAHI in monolayer $\mathrm{RuBr_2}$ are higher than the thermal energy of room temperature (25 meV), which is key at room temperature for device applications.

preprint2021arXiv

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdCl_2}$ monolayer

Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic anisotropy (PMA), valence band maximum (VBM)/conduction band minimum (CBM) at valley points, strong ferromagnetic (FM) coupling and proper valley splitting. In this work, the monolayer $\mathrm{GdCl_2}$ is proposed as a potential candidate material for valleytronic applications by the first-principles calculations. It is proved that monolayer $\mathrm{GdCl_2}$ is a FM semiconductor with the easy axis along out of plane direction and strong FM coupling. A spontaneous valley polarization with a valley splitting of 42.3 meV is produced due to its intrinsic ferromagnetism and spin orbital coupling (SOC). Although the VBM of unstrained monolayer $\mathrm{GdCl_2}$ is away from valley points, a very small compressive strain (about 1\%) can make VBM move to valley points. We propose a possible way to realize anomalous valley Hall effect in monolayer $\mathrm{GdCl_2}$ by piezoelectric effect, not an external electric field, namely piezoelectric anomalous valley Hall effect (PAVHE). This phenomenon could be classified as piezo-valleytronics, being similar to piezotronics and piezophototronics. The only independent piezoelectric strain coefficient $d_{11}$ is -2.708 pm/V, which is comparable to one of classical bulk piezoelectric material $α$ -quartz ( $d_{11}$ =2.3 pm/V). The biaxial in-plane strain and electronic correlation effects are considered to confirm the reliability of our results. Finally, the monolayer $\mathrm{GdF_2}$ is predicted to be a ferrovalley material with dynamic and mechanical stabilities, PMA, VBM at valley points, strong FM coupling, valley splitting of 47.6 meV, and $d_{11}$ of 0.584 pm/V.

preprint2021arXiv

Coexistence of intrinsic piezoelectricity and nontrivial band topology in monolayer InXO (X=Se and Te)

The combination of piezoelectricity with other unique properties (like topological insulating phase and intrinsic ferromagnetism) in two-dimensional (2D) materials is much worthy of intensive study. In this work, the piezoelectric properties of 2D topological insulators InXO (X=Se and Te) from monolayer InX (X=Se and Te) with double-side oxygen functionalization are studied by density functional theory (DFT). The large piezoelectric strain coefficients (e.g. $d_{11}$ =-13.02 pm/V for InSeO and $d_{11}$ =-9.64 pm/V for InTeO) are predicted, which are comparable and even higher than ones of many other familiar 2D materials. Moreover, we propose two strategies to enhance piezoelectric response of monolayer InXO (X=Se and Te). Firstly, the biaxial strain (0.94-1.06) is applied, and the $d_{11}$ (absolute value) is increased by 53\%/56\% for monolayer InSeO/InTeO at 1.06 strain, which is due to increased $e_{11}$ (absolute value) and reduced $C_{11}-C_{12}$ . In considered strain range, InXO (X=Se and Te) monolayers are always 2D topological insulators, which confirm the coexistence of piezoelectricity and nontrivial band topology. Secondly, a Janus monolayer $\mathrm{In_2SeTeO_2}$ is designed by replacing the top Se/Te atomic layer in monolayer InSeO/InTeO with Te/Se atoms, which is dynamically and mechanically stable. More excitingly, Janus monolayer $\mathrm{In_2SeTeO_2}$ is also a 2D topological insulator with sizeable bulk gap up to 0.158 eV, confirming the coexistence of intrinsic piezoelectricity and topological nature. The calculated $d_{11}$ is -9.9 pm/V, which is in the middle of ones of InSeO and InTeO monolayers.

preprint2021arXiv

Piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer $\mathrm{SrAlGaSe_4}$

The realization of multifunctional two-dimensional (2D) materials is fundamentally intriguing, such as combination of piezoelectricity with topological insulating phase or ferromagnetism. In this work, a Janus monolayer $\mathrm{SrAlGaSe_4}$ is built from 2D $\mathrm{MA_2Z_4}$ family with dynamic, mechanical and thermal stabilities, which is piezoelectric due to lacking inversion symmetry. The unstrained $\mathrm{SrAlGaSe_4}$ monolayer is a narrow gap normal insulator (NI) with spin orbital coupling (SOC). However, the NI to topological insulator (TI) phase transition can be induced by the biaxial strain, and a piezoelectric quantum spin Hall insulator (PQSHI) can be achieved. More excitingly, the phase transformation point is only about 1.01 tensile strain, and nontrivial band topology can hold until considered 1.16 tensile strain. Moreover, a Rashba spin splitting in the conduction bands can exit in PQSHI due to the absence of a horizontal mirror symmetry and the presence of SOC. For monolayer $\mathrm{SrAlGaSe_4}$ , both in-plane and much weak out-of-plane piezoelectric polarizations can be induced with a uniaxial strain applied. The calculated piezoelectric strain coefficients $d_{11}$ and $d_{31}$ of monolayer $\mathrm{SrAlGaSe_4}$ are -1.865 pm/V and -0.068 pm/V at 1.06 tensile strain as a representative TI. In fact, many PQSHIs can be realized from 2D $\mathrm{MA_2Z_4}$ family. To confirm that, similar to $\mathrm{SrAlGaSe_4}$ , the coexistence of piezoelectricity and topological orders can be realized by strain (about 1.04 tensile strain) in the $\mathrm{CaAlGaSe_4}$ monolayer. Our works suggest that Janus monolayer $\mathrm{SrAlGaSe_4}$ is a pure 2D system for PQSHI, enabling future studies exploring the interplay between piezoelectricity and topological orders, which can lead to novel applications in electronics and spintronics.

preprint2021arXiv

Sensitive electronic correlation effects on electronic properties in ferrovalley material Janus FeClF monolayer

The electronic correlation may have essential influence on electronic structures in some materials with special structure and localized orbital distribution. In this work, taking Janus monolayer FeClF as a concrete example, the correlation effects on its electronic structures are investigated by using generalized gradient approximation plus $U$ (GGA+ $U$ ) approach. For perpendicular magnetic anisotropy (PMA), the increasing electron correlation effect can induce the ferrovalley (FV) to half-valley-metal (HVM) to quantum anomalous Hall (QAH) to HVM to FV transitions. For QAH state, there are a unit Chern number and a chiral edge state connecting the conduction and valence bands. The HVM state is at the boundary of the QAH phase, whose carriers are intrinsically 100\% valley polarized. With the in-plane magnetic anisotropy, no special QAH states and prominent valley polarization are observed. However, for both out-of-plane and in-plane magnetic anisotropy, sign-reversible Berry curvature can be observed with increasing $U$ . It is found that these phenomenons are related with the change of $d_{xy}$ / $d_{x^2-y^2}$ and $d_{z^2}$ orbital distributions and different magnetocrystalline directions. It is also found that the magnetic anisotropy energy (MAE) and Curie temperature strongly depend on the $U$ . With PMA, taking typical $U=$ 2.5 eV, the electron valley polarization can be observed with valley splitting of 109 meV, which can be switched by reversing the magnetization direction. The analysis and results can be readily extended to other nine members of monolayer FeXY (X/Y=F, Cl, Br and I) due to sharing the same Fe-dominated low-energy states and electronic correlations with FeClF monolayer.

preprint2021arXiv

Spin-valley-coupled quantum spin Hall insulator with topological Rashba-splitting edge states in Janus monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$

Achieving combination of spin and valley polarized states with topological insulating phase is pregnant to promote the fantastic integration of topological physics, spintronics and valleytronics. In this work, a spin-valley-coupled quantum spin Hall insulator (svc-QSHI) is predicted in Janus monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$ with dynamic, mechanical and thermal stabilities. The inequivalent valleys have opposite Berry curvature and spin moment, which can produce a spin-valley Hall effect. In the center of Brillouin zone, a Rashba-type spin splitting can be observed due to missing horizontal mirror symmetry. Moreover, monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$ shows unique Rashba-splitting edge states. Both energy band gap and spin-splitting at the valley point are larger than the thermal energy of room temperature (25 meV) with generalized gradient approximation (GGA) level, which is very important at room temperature for device applications. It is proved that the spin-valley-coupling and nontrivial quantum spin Hall (QSH) state are robust again biaxial strain. Our work may provide a new platform to achieve integration of topological physics, spintronics and valleytronics.

preprint2021arXiv

Tuning transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ with biaxial strain

Experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}) is a piezoelectric semiconductor. Here, we systematically study the large biaxial (isotropic) strain effects (0.90 to 1.10) on electronic structures and transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ by density functional theory (DFT). With $a/a_0$ from 0.90 to 1.10, the energy band gap firstly increases, and then decreases, which is due to transformation of conduction band minimum (CBM). Calculated results show that the $\mathrm{MoSi_2N_4}$ monolayer is mechanically stable in considered strain range. It is found that the spin-orbital coupling (SOC) effects on Seebeck coefficient depend on the strain. In unstrained $\mathrm{MoSi_2N_4}$ , the SOC has neglected influence on Seebeck coefficient. However, the SOC can produce important influence on Seebeck coefficient, when the strain is applied, for example 0.96 strain. The compressive strain can change relative position and numbers of conduction band extrema (CBE), and then the strength of conduction bands convergence can be enhanced, to the benefit of n-type $ZT_e$ . Only about 0.96 strain can effectively improve n-type $ZT_e$ . Our works imply that strain can effectively tune the electronic structures and transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ , and can motivate farther experimental exploration.

preprint2021arXiv

Valley polarization transition driven by biaxial strain in Janus $\mathrm{GdClF}$ monolayer

The valley degrees of freedom of carriers in crystals is useful to process information and perform logic operations, and it is a key factor for valley application to realize the valley polarization. Here, we propose a model that the valley polarization transition at different valley points (-K and K points) is produced by biaxial strain. By the first-principle calculations, we illustrate our idea with a concrete example of Janus $\mathrm{GdClF}$ monolayer. The predicted $\mathrm{GdClF}$ monolayer is dynamically, mechanically and thermally stable, and is a ferromagnetic (FM) semiconductor with perpendicular magnetic anisotropy (PMA), valence band maximum (VBM) at valley points and high Curie temperature ( $T_C$ ). Due to its intrinsic ferromagnetism and spin orbital coupling (SOC), a spontaneous valley polarization will be induced, but the valley splitting is only -3.1 meV, which provides an opportunity to achieve valley polarization transition at different valley points by strain. In considered strain range ( $a/a_0$ : 0.94 $\sim$ 1.06), the strained GdClF monolayer has always energy bandgap, strong FM coupling and PMA. The compressive strain is in favour of -K valley polarization, while the tensile strain makes for K valley polarization. The corresponding valley splitting at 0.96 and 1.04 strain are -44.5 meV and 29.4 meV, which are higher than the thermal energy of room temperature (25 meV). Due to special Janus structure, both in-plane and out-of-plane piezoelectric polarizations can be observed. It is found that the direction of in-plane piezoelectric polarizations can be overturned by strain, and the $d_{11}$ at 0.96 and 1.04 strain are -1.37 pm/V and 2.05 pm/V. Our works pave the way to design the ferrovalley material as multifunctional valleytronics and piezoelectric devices by strain.

preprint2020arXiv

Biaxial strain enhanced piezoelectric properties in monolayer g- $\mathrm{C_3N_4}$

Graphite-like carbon nitride (g- $\mathrm{C_3N_4}$ ) is considered as a promising candidate for energy materials. In this work, the biaxial strain (-4\%-4\%) effects on piezoelectric properties of g- $\mathrm{C_3N_4}$ monolayer are studied by density functional theory (DFT). It is found that the increasing strain can reduce the elastic coefficient $C_{11}$ - $C_{12}$ , and increases piezoelectric stress coefficient $e_{11}$ , which lead to the enhanced piezoelectric strain coefficient $d_{11}$ . Compared to unstrained one, strain of 4\% can raise the $d_{11}$ by about 330\%. From -4\% to 4\%, strain can induce the improved ionic contribution to $e_{11}$ of g- $\mathrm{C_3N_4}$ , and almost unchanged electronic contribution, which is different from $\mathrm{MoS_2}$ monolayer (the enhanced electronic contribution and reduced ionic contribution). To prohibit current leakage, a piezoelectric material should be a semiconductor, and g- $\mathrm{C_3N_4}$ monolayer is always a semiconductor in considered strain range. Calculated results show that the gap increases from compressive strain to tensile one. At 4\% strain, the first and second valence bands cross, which has important effect on transition dipole moment (TDM). Our works provide a strategy to achieve enhanced piezoelectric effect of g- $\mathrm{C_3N_4}$ monolayer, which gives a useful guidence for developing efficient energy conversion devices.

preprint2020arXiv

Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer $\mathrm{VSi_2P_4}$

The septuple-atomic-layer $\mathrm{VSi_2P_4}$ with the same structure of experimentally synthesized $\mathrm{MoSi_2N_4}$ is predicted to be a spin-gapless semiconductor (SGS). In this work, the biaxial strain is applied to tune electronic properties of $\mathrm{VSi_2P_4}$ , and it spans a wide range of properties upon the increasing strain from ferromagnetic metal (FMM) to SGS to ferromagnetic semiconductor (FMS) to SGS to ferromagnetic half-metal (FMHM). Due to broken inversion symmetry, the coexistence of ferromagnetism and piezoelectricity can be achieved in FMS $\mathrm{VSi_2P_4}$ with strain range of 0\% to 4\%. The calculated piezoelectric strain coefficients $d_{11}$ for 1\%, 2\% and 3\% strains are 4.61 pm/V, 4.94 pm/V and 5.27 pm/V, respectively, which are greater than or close to a typical value of 5 pm/V for bulk piezoelectric materials. Finally, similar to $\mathrm{VSi_2P_4}$ , the coexistence of piezoelectricity and ferromagnetism can be realized by strain in the $\mathrm{VSi_2N_4}$ monolayer. Our works show that $\mathrm{VSi_2P_4}$ in FMS phase with intrinsic piezoelectric properties can have potential applications in spin electronic devices.

preprint2020arXiv

Intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W)

Motived by experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020})), the intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W) are studied by density functional theory (DFT). Among the six monolayers, the $\mathrm{CrSi_2N_4}$ has the best piezoelectric strain coefficient $d_{11}$ of 1.24 pm/V, and the second is 1.15 pm/V for $\mathrm{MoSi_2N_4}$ . Taking $\mathrm{MoSi_2N_4}$ as a example, strain engineering is applied to improve $d_{11}$ . It is found that tensile biaxial strain can enhance $d_{11}$ of $\mathrm{MoSi_2N_4}$ , and the $d_{11}$ at 4\% can improve by 107\% with respect to unstrained one. By replacing the N by P or As in $\mathrm{MoSi_2N_4}$ , the $d_{11}$ can be raise substantially. For $\mathrm{MoSi_2P_4}$ and $\mathrm{MoSi_2As_4}$ , the $d_{11}$ is as high as 4.93 pm/V and 6.23 pm/V, which is mainly due to smaller $C_{11}-C_{12}$ and very small minus or positive ionic contribution to piezoelectric stress coefficient $e_{11}$ with respect to $\mathrm{MoSi_2N_4}$ . The discovery of this piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ enables active sensing, actuating and new electronic components for nanoscale devices, and is recommended for experimental exploration.

preprint2020arXiv

Predicted septuple-atomic-layer Janus $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

Janus two-dimensional (2D) materials have attracted much attention due to possessing unique properties caused by their out-of-plane asymmetry, which have been achieved in many 2D families. In this work, the Janus monolayers are predicted in new 2D $\mathrm{MA_2Z_4}$ family by means of first-principles calculations, $\mathrm{MoSi_2N_4}$ and $\mathrm{WSi_2N_4}$ of which have been synthesized in experiment(\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}). The predicted $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers exhibit dynamic, thermodynamical and mechanical stability, and they are indirect band-gap semiconductors. The inclusion of spin-orbit coupling (SOC) gives rise to the Rashba-type spin splitting, which is observed in the valence bands, being different from common conduction bands. Calculated results show valley polarization at the edge of the conduction bands due to SOC together with inversion symmetry breaking. It is found that $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers have high electron mobilities. Both in-plane and much weak out-of-plane piezoelectric polarizations can be observed, when a uniaxial strain in the basal plane is applied. The values of piezoelectric strain coefficient $d_{11}$ of the Janus $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers fall between those of the $\mathrm{MSi_2N_4}$ (M=Mo and W) and $\mathrm{MGe_2N_4}$ (M=Mo and W) monolayers, as expected. It is proved that strain can tune the positions of valence band maximum (VBM) and conduction band minimum (CBM), and enhance the the strength of conduction bands convergence caused by compressive strain. It is also found that tensile biaxial strain can enhance $d_{11}$ of $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers, and the compressive strain can improve the $d_{31}$ (absolute values).

preprint2019arXiv

Large piezoelectric coefficients combined with high electron mobilities in Janus monolayer XTeI (X=Sb and Bi): a first-principle study

The absence of both the inversion symmetry and out-of-plane mirror symmetry together with spin-orbit coupling (SOC) can induce novel electronic and piezoelectric properties. In this work, the piezoelectric properties along with carrier mobilities of Janus monolayer XTeI (X=Sb and Bi) are studied by density functional theory (DFT). By using generalized gradient approximation (GGA) plus SOC, they are found to be indirect gap semiconductors with the Rashba spin splitting. The piezoelectric tensors of Janus monolayer XTeI (X=Sb and Bi) are reported by using density functional perturbation theory (DFPT). Due to lacking both the inversion symmetry and out-of-plane mirror symmetry for Janus monolayer XTeI (X=Sb and Bi), both in-plane and out-of-plane piezoelectric effects can be observed, and the large piezoelectric coefficients are predicted (e.g. $d_{11}$ =12.95 pm/V for SbTeI and $d_{11}$ =8.20 pm/V for BiTeI), which are comparable and even higher than ones of many other two-dimensional (2D) materials and other well-known bulk piezoelectric materials, especially for out-of-plane piezoelectric coefficients. With GGA+SOC, the high electron carrier mobilities are obtained, and the electron mobility of BiTeI along armchair direction reaches up to about 1319 $\mathrm{cm^2V^{-1}s^{-1}}$ . The carrier mobility shows a rather pronounced anisotropy between electron and hole/armchair and zigzag directions. It is found that tensile strain can improve the piezoelectric coefficients $d_{11}$ of Janus monolayer XTeI (X=Sb and Bi). For example, at 4\% strain, the $d_{11}$ of SbTeI (BiTeI) is up to 20.12 pm/V (11.48 pm/V), compared with unstrained 12.95 pm/V (8.20 pm/V). Our works imply Janus monolayer XTeI (X=Sb and Bi) have potential applications in flexible electronics and piezoelectric devices, and can stimulate further experimental works.

preprint2019arXiv

Piezoelectric properties of $\mathrm{Ga_2O_3}$ : a first-principle study

The compounds exhibit piezoelectricity, which demands to break inversion symmetry, and then to be a semiconductor. For $\mathrm{Ga_2O_3}$ , the orthorhombic case ( $ε$ - $\mathrm{Ga_2O_3}$ ) of common five phases breaks inversion symmetry. Here, the piezoelectric tensor of $ε$ - $\mathrm{Ga_2O_3}$ is reported by using density functional perturbation theory (DFPT). To confirm semiconducting properties of $ε$ - $\mathrm{Ga_2O_3}$ , its electronic structures are studied by using generalized gradient approximation (GGA) and Tran and Blaha's modified Becke and Johnson (mBJ) exchange potential. The gap value of 4.66 eV is predicted with mBJ method, along with the the effective mass tensor for electrons at the conduction band minimum (CBM) [about 0.24 $m_0$ ]. The mBJ gap is very close to the available experimental value. The elastic tensor $C_{ij}$ and piezoelectric stress tensor $e_{ij}$ are attained by DFPT, and then piezoelectric strain tensor $d_{ij}$ are calculated from $C_{ij}$ and $e_{ij}$ . In this process, average mechanical properties of $ε$ - $\mathrm{Ga_2O_3}$ are estimated, such as bulk modulus, Shear modulus, Young's modulus and so on. The calculated $d_{ij}$ are comparable and even higher than commonly used piezoelectric materials such as $α$ -quartz, ZnO, AlN and GaN.

preprint2019arXiv

Predicted Janus SnSSe monolayer: a comprehensive first-principle study

The Janus structure, by combining properties of different transition metal dichalcogenide (TMD) monolayers in a single polar material, has attracted increasing research interest because of their particular structure and potential application in electronics, optoelectronics and piezoelectronics. In this work, Janus SnSSe monolayer is predicted by means of first-principles calculations, which exhibits dynamic and mechanical stability. By using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC), the Janus SnSSe monolayer is found to be an indirect band-gap semiconductor, whose gap can easily be tuned by strain. High carrier mobilities are obtained for SnSSe monolayer, and the hole mobility is higher than the electron mobility. For SnSSe monolayer, a uniaxial strain in the basal plane can induce both strong in-plane and much weaker out-of-plane piezoelectric polarizations, which reveals the potential as a piezoelectric two-dimensional (2D) material. The high absorption coefficients in the visible light region are observed, suggesting a potential photocatalytic application. Calculated results show that SnSSe monolayer has very high power factor, making it a promising candidate for thermoelectric applications. Our works reveal that the Janus SnSSe structure can be fabricated with unique electronic, optical, piezoelectric and transport properties, and can motivate related experimental works.

preprint2019arXiv

Tuning pure out-of-plane piezoelectric effect of penta-graphene: a first-principle study

For two-dimensional (2D) materials, a pure large out-of-plane piezoelectric response, compatible with the nowadays bottom/top gate technologies, is highly desired. In this work, the piezoelectric properties of penta-graphene (CCC) monolayer are studied with pure out-of-plane piezoelectric effect by density functional theory (DFT). However, the $d_{36}$ is very small, and only -0.065 pm/V. Two strategies are proposed to enhance piezoelectric properties of CCC monolayer. Firstly, both biaxial and uniaxial strains are applied, but the enhancement is very small, and at -2\% biaxial (-4\% uniaxial) strain, the $d_{36}$ is increased only by 3.1\% (13.9\%). Secondly, a Janus penta-monolayer (CCB) is constructed by replacing the top C (B) atomic layer in monolayer CCC [pentagonal $\mathrm{CB_2}$ monolayer (CBB)] with B (C) atoms, which shows dynamic and mechanical stability. Fortunately, the pure out-of-plane piezoelectric effect of CCB monolayer still holds, and exhibits a band gap. The calculated $d_{31}$ and $d_{32}$ are -0.505 pm/V and 0.273 pm/V, respectively, which are very larger than $d_{36}$ of CCC monolayer. The out-of-plane piezoelectricity $d_{31}$ of CCB monolayer is obviously higher compared with many other 2D known materials. Moreover, its room-temperature electronic mobility along y direction is as high as 8865.23 $\mathrm{cm^2V^{-1}s^{-1}}$ . Our works provide a new way to achieve pure out-of-plane piezoelectric effect, which is highly desirable for ultrathin piezoelectric devices.

preprint2019arXiv

Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

Due to their great potential in electronics, optoelectronics and piezoelectronics, Janus transition metal dichalcogenide (TMD) monolayers have attracted increasing research interest, the MoSSe of which with sandwiched S-Mo-Se structure has been synthesized experimentally. In this work, the biaxial strain dependence of electronic structures and transport properties of Janus PtSSe monolayer is systematically investigated by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). Calculated results show that SOC has a detrimental effect on power factor of PtSSe monolayer, which can be understood by considering SOC effects on energy bands near the Fermi level. With $a/a_0$ from 0.94 to 1.06, the energy band gap firstly increases, and then decreases, which is due to the position change of conduction band minimum (CBM). It is found that compressive strain can increase the strength of conduction bands convergence by changing relative position of conduction band extrema (CBE), which can enhance n-type $ZT_e$ values. Calculated results show that compressive strain can also induce the flat valence bands around the $Γ$ point near the Fermi level, which can lead to high Seebeck coefficient due to large effective masses, giving rise to better p-type $ZT_e$ values. The calculated elastic constants with $a/a_0$ from 0.94 to 1.06 all satisfy the mechanical stability criteria, which proves that the PtSSe monolayer is mechanically stable in the considered strain range. Our works further enrich studies of Janus TMD monolayers, and can motivate farther experimental works.

preprint2016arXiv

Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$

Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric properties (both electron and phonon parts) of monolayer $\mathrm{PtSe_2}$ with generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) for electron part and GGA for phonon part. Calculated results show that compressive or tensile strain can induce conduction band minimum (CBM) or valence band maximum (VBM) transition, which produces important effects on Seebeck coefficient. It is found that compressive or tensile strain can induce significantly enhanced n- or p-type Seebeck coefficient at the critical strain of CBM or VBM transition, which can be explained by strain-induced band convergence. Another essential strain effect is that tensile strain can produce significantly reduced lattice thermal conductivity, and the room temperature lattice thermal conductivity at the strain of -4.02\% can decrease by about 60\% compared to unstrained one, which is very favorable for high $ZT$ . To estimate efficiency of thermoelectric conversion, the figure of merit $ZT$ can be obtained by empirical scattering time $τ$ . Calculated $ZT$ values show that strain indeed is a very effective strategy to achieve enhanced thermoelectric properties, especially for p-type doping. Tuning thermoelectric properties with strain also can be applied to other semiconducting transition-metal dichalcogenide monolayers $\mathrm{MX_2}$ (M=Zr, Hf, Mo, W and Pt; X=S, Se and Te).

preprint2016arXiv

Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$ : a first-principles study

The electronic structures and thermoelectric properties of $\mathrm{Cs_2[PdCl_4]I_2}$ are investigated by the first-principles calculations and semiclassical Boltzmann transport theory. Both electron and phonon transport are considered to attain the figure of merit $ZT$ . A modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC), is employed to investigate electronic part of $\mathrm{Cs_2[PdCl_4]I_2}$ . It is found that SOC has obvious effect on valence bands, producing huge spin-orbital splitting, which leads to remarkable detrimental effect on p-type power factor. However, SOC has a negligible influence on conduction bands, so the n-type power factor hardly change. The temperature dependence of lattice thermal conductivity by assuming an inverse temperature dependence is attained from reported ultralow lattice thermal conductivity of 0.31 $\mathrm{W m^{-1} K^{-1}}$ at room temperature. Calculating scattering time $τ$ is challenging, but a hypothetical $τ$ can be adopted to estimate thermoelectric conversion efficiency. The maximal figure of merit $ZT$ is up to about 0.70 and 0.60 with scattering time $τ$ = $10^{-14}$ s and $τ$ = $10^{-15}$ s, respectively. These results make us believe that $\mathrm{Cs_2[PdCl_4]I_2}$ may be a potential thermoelectric material.

preprint2016arXiv

Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations

The thermoelectric properties of halide perovskites $\mathrm{CsMI_3}$ (M=Sn and Pb) are investigated from a combination of first-principles calculations and semiclassical Boltzmann transport theory by considering both the electron and phonon transport. The electronic part is performed using a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC), while the phonon part is computed using generalized gradient approximation (GGA). It is found that SOC has remarkable detrimental effect on n-type power factor, while has a negligible influence in p-type doping, which can be explained by considering SOC effect on conduction and valence bands. Calculated results show exceptionally low lattice thermal conductivities in $\mathrm{CsSnI_3}$ and $\mathrm{CsPbI_3}$ , and the corresponding room-temperature lattice thermal conductivity is 0.54 $\mathrm{W m^{-1} K^{-1}}$ and 0.25 $\mathrm{W m^{-1} K^{-1}}$ . At 1000 K, the maximal figure of merit $ZT$ is up to 0.63 and 0.64 for $\mathrm{CsSnI_3}$ and $\mathrm{CsPbI_3}$ with scattering time $τ$ = $10^{-14}$ s, and the peak $ZT$ is 0.49 and 0.41 with $τ$ = $10^{-15}$ s. These results make us believe that $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures may be potential thermoelectric materials.

preprint2016arXiv

Pressure enhanced thermoelectric properties in Mg2Sn

Pressure dependence of electronic structures and thermoelectric properties of $\mathrm{Mg_2Sn}$ are investigated by using a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC). The corresponding value of spin-orbit splitting at $Γ$ point is 0.47 eV, which is in good agreement with the experimental value 0.48 eV. With the pressure increasing, the energy band gap first increases, and then decreases. In certain doping range, the power factor for n-type has the same trend with energy band gap, when the pressure increases. Calculated results show that the pressure can lead to significantly enhanced power factor in n-type doping below the critical pressure, and the corresponding lattice thermal conductivity near the critical pressure shows the relatively small value. These results make us believe that thermoelectric properties of $\mathrm{Mg_2Sn}$ can be improved in n-type doping by pressure.

preprint2016arXiv

Strain effect on power factor in monolayer $\mathrm{MoS_2}$

Biaxial strain dependence of electronic structures and thermoelectric properties of monolayer $\mathrm{MoS_2}$ , including compressive and tensile strain, are investigated by using local-density approximation (LDA) plus spin-orbit coupling (SOC). Both LDA and LDA+SOC results show that $\mathrm{MoS_2}$ is a direct gap semiconductor with optimized lattice constants. It is found that SOC has important effect on power factor, which can enhance one in n-type doping, but has a obvious detrimental influence for p-type. Both compressive and tensile strain can induce direct-indirect gap transition, which produce remarkable influence on power factor. Calculated results show that strain can induce significantly enhanced power factor in n-type doping by compressive strain and in p-type doping by tensile strain at the critical strain of direct-indirect gap transition. These can be explained by strain-induced accidental degeneracies, which leads to improved Seebeck coefficient. Calculated results show that n-type doping can provide better power factor than p-type doping. These results make us believe that thermoelectric properties of monolayer $\mathrm{MoS_2}$ can be improved in n-type doping by compressive strain.

preprint2016arXiv

Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations

We investigate electronic structures and thermoelectric properties of recent synthetic half-Heusler $\mathrm{ZrNiPb}$ by using generalized gradient approximation (GGA) and GGA plus spin-orbit coupling (GGA+SOC). Calculated results show that $\mathrm{ZrNiPb}$ is a indirect-gap semiconductor. Within the constant scattering time approximation, semi-classic transport coefficients are performed through solving Boltzmann transport equations. It is found that the SOC has more obvious influence on power factor in p-type doping than in n-type doping, leading to a detrimental effect in p-type doping. These can be explained by considering the SOC influences on the valence bands and conduction bands near the Fermi level. The lattice thermal conductivity as a function of temperature is calculated, and the corresponding lattice thermal conductivity is 14.5 $\mathrm{W m^{-1} K^{-1}}$ at room temperature. By comparing the experimental transport coefficients with calculated ones, the scattering time is attained for 0.333 $\times$ $10^{-14}$ s. Finally, the thermoelectric figure of merit $ZT$ can be attained, and the $ZT$ value can be as high as 0.30 at high temperature by choosing appropriate doping level. It is possible to reduce lattice thermal conductivity by point defects and boundaries, and make half-Heusler $\mathrm{ZrNiPb}$ become potential candidate for efficient thermoelectricity.

preprint2016arXiv

Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$

Recently, $\mathrm{BaSn_2}$ is predicted to be a strong topological insulator by the first-principle calculations. It is well known that topological insulator has a close connection to thermoelectric material, such as $\mathrm{Bi_2Te_3}$ family. In this work, we investigate thermoelectric properties of $\mathrm{BaSn_2}$ by the first-principles combined with Boltzmann transport theory. The electronic part is carried out by a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC), while the phonon part is performed using generalized gradient approximation (GGA). It is found that the electronic transport coefficients between the in-plane and cross-plane directions show the strong anisotropy, while lattice lattice thermal conductivities show an almost isotropy. Calculated results show a very low lattice thermal conductivity for $\mathrm{BaSn_2}$ , and the corresponding average lattice thermal conductivity at room temperature is 1.69 $\mathrm{W m^{-1} K^{-1}}$ , which is comparable or lower than those of lead chalcogenides and bismuth-tellurium systems as classic thermoelectric materials. Due to the complicated scattering mechanism, calculating scattering time $τ$ is challenging. By using a empirical $τ$ = $10^{-14}$ s, the n-type figure of merit $ZT$ is greater than 0.40 in wide temperature range. Experimentally, it is possible to attain better thermoelectric performance, or to enhance one by strain or tuning size parameter. This work indicates that $\mathrm{BaSn_2}$ may be a potential thermoelectric material, which can stimulate further theoretical and experimental works.

preprint2014arXiv

Re-t2g-splitting-driven semiconductor gaps in ferrimagnetic double perovskite Ca2MReO6 (M=Cr,Fe) from first principles

Motivated by the observation of nonmetallic nature in double perovskite Ca2CrReO6 and Ca2FeReO6 with high magnetic Curie temperatures of 360 and 522 K, we systematically investigate the structural, electronic, and magnetic properties of Ca2MReO6 (M=Cr,Fe) using the full-potential linear augmented plane wave (FP-LAPW) method within the density functional theory. Our full optimization confirms the stable ground-state structure with $P2_1/n$ symmetry. The modified Becke-Johnson (mBJ) exchange potential is used for investigating electronic structures. Our mBJ calculation shows that they are both ferrimagnetic semiconductors with semiconductor gaps of 0.38 eV and 0.05 eV, respectively, in contrast with wrong metallic phases from the generalized gradient approximation (GGA). The origin of semiconductor gap is due to the further distortion of ReO $_6$ octahedra caused by John-Teller effect, which drives the three partially-occupied Re $t_{2g}$ bands split into two fully-filled bands and one empty band in the minority-spin channel. With the spin-orbit coupling (SOC) taken into account, the Ca2MReO6 (M=Cr,Fe) shows high magneto-crystalline anisotropy (MCA) with the magnetic easy axis along pseudocubic [010] direction, and the total magnetic moments increase by 0.209 $μ_B$ and 0.258 $μ_B$ per formula unit, respectively, due to the strong SOC effect on Re ion. Although reducing to 0.31 and 0.03 eV, the semiconductor gaps remain open in spite of the SOC broadening of the Re $t_{2g}$ -related bands. Therefore, our DFT investigation with mBJ has established the correct ferrimagnetic semiconductor ground state for the double perovskites Ca2MReO6 (M=Cr,Fe). This mechanism, different from that in double perovskite Sr2CrOsO6, can help understand physical properties of other similar compounds.

preprint2010arXiv

Improved half-metallic ferromagnetism of transition-metal pnictides and chalcogenides calculated with a modified Becke-Johnson exchange potential

We use a density-functional-theory (DFT) approach with a modified Becke-Johnson exchange plus local density approximation (LDA) correlation potential (mBJLDA) [semi-local, orbital-independent, producing accurate semiconductor gaps. see F. Tran and P. Blaha, Phys. Rev. Lett. 102, 226401 (2009)] to investigate the electronic structures of zincblende transition-metal (TM) pnictides and chalcogenides akin to semiconductors. Our results show that this potential does not yield visible changes in wide TM d-t_{2g} bands near the Fermi level, but makes the occupied minority-spin p-bands lower by 0.25~0.35 eV and the empty (or nearly empty) minority-spin e_g bands across the Fermi level higher by 0.33~0.73 eV. Consequently, mBJLDA, having no atom-dependent parameters, makes zincblende MnAs become a truly half-metallic (HM) ferromagnet with a HM gap (the key parameter) 0.318eV, being consistent with experiment. For zincblende MnSb, CrAs, CrSb, CrSe, or CrTe, the HM gap is enhanced by 19~56% compared to LDA and generalized gradient approximation results. The improved HM ferromagnetism can be understood in terms of the mBJLDA-enhanced spin exchange splitting.

preprint2010arXiv

Robust half-metallic ferromagnet of cubic VGe3Si4

To seek half-metallic ferromagnets compatible with the GeSi semiconductor, we use state-of-the-art density-functional-theory methods to study cubic $\mathrm{VGe_3Si_4}$ . After optimizing its crystal structure with various magnetic orders considered, we find the ferromagnetic structure is the ground state phase and investigate its stability, and then study its spin-resolved electronic structure with an improved method. Our calculated results show that the cubic $\mathrm{VGe_3Si_4}$ is a half-metallic ferromagnet with half-metallic gap 350 meV, and it is structurally stable against deformations and magnetically robust against antiferromagnetic fluctuations. These results make us believe that the cubic $\mathrm{VGe_3Si_4}$ could be synthesized as good thin films soon and used in practical spintronic devices.

preprint2009arXiv

Stable half-metallic ferromagnetism in nonstoichiometric cubic binary chromium chalcogenides

We find that three nonstoichiometric cubic binary chromium chalcogenides, namely Cr3S4, Cr3Se4, and Cr3Te4, are stable half-metallic ferromagnets with wide half-metallic gaps on the basis of systematic state-of-the-arts first-principles calculations. We optimize their structures, and then calculate their magnetic moments, electronic structures, formation heats, and elastic moduli and investigate their structural stability and robustness of ferromagnetism against antiferromagnetic fluctuations. Our calculated results show that the three sulvanite phases are structurally stable and ferromagnetically robust, and hence could be realized as epitaxial thin films. We attribute the structural and ferromagnetic stability and the better half-metallicity to their special effective Cr valence 2.667+. These findings will open doors for much more high-performance spintronic materials compatible with current semiconductor technology.

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San-Dong Guo

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37 publications

Hidden half-metallicity

Cataloguing MoSi2_22​N4_44​ and WSi2_22​N4_44​ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications

Correlation-driven threefold topological phase transition in monolayer OsBr2\mathrm{OsBr_2}OsBr2​

Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization

Huge out-of-plane piezoelectric response in ferromagnetic monolayer NiClI

Out-of-plane high-temperature ferromagnetic monolayer CrSCl with large vertical piezoelectric response

Piezoelectric ferromagnetism in Janus monolayer YBrI: a first-principle prediction

Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response

Strain effects on topological and valley properties of Janus monolayer VSiGeN4\mathrm{VSiGeN_4}VSiGeN4​

Valley-polarized quantum anomalous Hall insulator in monolayer RuBr2\mathrm{RuBr_2}RuBr2​

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in GdCl2\mathrm{GdCl_2}GdCl2​ monolayer

Coexistence of intrinsic piezoelectricity and nontrivial band topology in monolayer InXO (X=Se and Te)

Piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4\mathrm{SrAlGaSe_4}SrAlGaSe4​

Sensitive electronic correlation effects on electronic properties in ferrovalley material Janus FeClF monolayer

Spin-valley-coupled quantum spin Hall insulator with topological Rashba-splitting edge states in Janus monolayer CSb1.5Bi1.5\mathrm{CSb_{1.5}Bi_{1.5}}CSb1.5​Bi1.5​

Tuning transport coefficients of monolayer MoSi2N4\mathrm{MoSi_2N_4}MoSi2​N4​ with biaxial strain

Valley polarization transition driven by biaxial strain in Janus GdClF\mathrm{GdClF}GdClF monolayer

Biaxial strain enhanced piezoelectric properties in monolayer g-C3N4\mathrm{C_3N_4}C3​N4​

Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer VSi2P4\mathrm{VSi_2P_4}VSi2​P4​

Intrinsic piezoelectricity in monolayer XSi2N4\mathrm{XSi_2N_4}XSi2​N4​ (X=Ti, Zr, Hf, Cr, Mo and W)

Predicted septuple-atomic-layer Janus MSiGeN4\mathrm{MSiGeN_4}MSiGeN4​ (M=Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

Large piezoelectric coefficients combined with high electron mobilities in Janus monolayer XTeI (X=Sb and Bi): a first-principle study

Piezoelectric properties of Ga2O3\mathrm{Ga_2O_3}Ga2​O3​: a first-principle study

Predicted Janus SnSSe monolayer: a comprehensive first-principle study

Tuning pure out-of-plane piezoelectric effect of penta-graphene: a first-principle study

Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

Biaxial strain tuned thermoelectric properties in monolayer PtSe2\mathrm{PtSe_2}PtSe2​

Potential thermoelectric material Cs2[PdCl4]I2\mathrm{Cs_2[PdCl_4]I_2}Cs2​[PdCl4​]I2​: a first-principles study

Potential thermoelectric materials CsMI3\mathrm{CsMI_3}CsMI3​ (M=Sn and Pb) in perovskite structures from the first-principles calculations

Pressure enhanced thermoelectric properties in Mg2Sn

Strain effect on power factor in monolayer MoS2\mathrm{MoS_2}MoS2​

Thermoelectric properties of half-Heusler ZrNiPb\mathrm{ZrNiPb}ZrNiPb by using first principles calculations

Thermoelectric properties of topological insulator BaSn2\mathrm{BaSn_2}BaSn2​

Re-t2g-splitting-driven semiconductor gaps in ferrimagnetic double perovskite Ca2MReO6 (M=Cr,Fe) from first principles

Improved half-metallic ferromagnetism of transition-metal pnictides and chalcogenides calculated with a modified Becke-Johnson exchange potential

Robust half-metallic ferromagnet of cubic VGe3Si4

Stable half-metallic ferromagnetism in nonstoichiometric cubic binary chromium chalcogenides

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Cataloguing MoSi $_2$ N $_4$ and WSi $_2$ N $_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications

Correlation-driven threefold topological phase transition in monolayer $\mathrm{OsBr_2}$

Strain effects on topological and valley properties of Janus monolayer $\mathrm{VSiGeN_4}$

Valley-polarized quantum anomalous Hall insulator in monolayer $\mathrm{RuBr_2}$

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdCl_2}$ monolayer

Piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer $\mathrm{SrAlGaSe_4}$

Spin-valley-coupled quantum spin Hall insulator with topological Rashba-splitting edge states in Janus monolayer $\mathrm{CSb_{1.5}Bi_{1.5}}$

Tuning transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ with biaxial strain

Valley polarization transition driven by biaxial strain in Janus $\mathrm{GdClF}$ monolayer

Biaxial strain enhanced piezoelectric properties in monolayer g- $\mathrm{C_3N_4}$

Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer $\mathrm{VSi_2P_4}$

Intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W)

Predicted septuple-atomic-layer Janus $\mathrm{MSiGeN_4}$ (M=Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities

Piezoelectric properties of $\mathrm{Ga_2O_3}$ : a first-principle study

Biaxial strain tuned thermoelectric properties in monolayer $\mathrm{PtSe_2}$

Potential thermoelectric material $\mathrm{Cs_2[PdCl_4]I_2}$ : a first-principles study

Potential thermoelectric materials $\mathrm{CsMI_3}$ (M=Sn and Pb) in perovskite structures from the first-principles calculations

Strain effect on power factor in monolayer $\mathrm{MoS_2}$

Thermoelectric properties of half-Heusler $\mathrm{ZrNiPb}$ by using first principles calculations

Thermoelectric properties of topological insulator $\mathrm{BaSn_2}$