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Bang-Gui Liu

Bang-Gui Liu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-matcond-mat.othercond-mat.str-elcond-mat.supr-conphysics.comp-phquant-ph

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Published work

28 published item(s)

preprint2022arXiv

Coexisting two-dimensional electron and hole gases highly confined at the interfaces of undoped KTaO3-sandwiching heterostructures

Two-dimensional electron gas (2DEG) in interfaces and surfaces based on perovskite SrTiO$_3$ (STO) has exhibited various interesting phenomena and is used to develop oxide electronics. Recently, KTaO$_3$ (KTO) shows great potential and is believed to host more exciting effects and phenomena toward novel devices. Here, through first-principles investigation and analysis, we find two types of coexisting 2DEG and 2D hole gas (2DHG) highly confined at the interfaces in undoped STO/KTO/BaTiO$_3$ heterostructures, when the KTO thickness $m$ reaches a crititcal value. The two interfaces are made by (SrO)$^0$/(TaO$_2$)$^+$ and (KO)$^-$/(TiO$_2$)$^0$ for the A-type, and by (TiO$_2$)$^0$/(KO)$^-$ and (TaO$_2$)$^+$/(BO)$^0$ for the B-type. The 2D electron carriers originate from Ta-$5 d_{xy}$ states at the interface including TaO$_2$ atomic layer, and the hole carriers from O-$2 p_x/p_y$ orbitals at the other interface. The electron and hole effective masses are 0.3$m_0$ and $1.06\sim 1.12 m_0$, respectively, where $m_0$ is mass of free electron, and the 2D carrier concentrations are in the order of $10 ^{13}$ cm$^{-2}$. Our analysis indicates that the interfacial 2DEG and 2DHG are simultaneously formed because of the band bending due to the polar discontinuity at the interfaces and the stress-induced polarization within the KTO layer. These could stimulate more exploration for new phenomena and novel devices.

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preprint2022arXiv

Correlation-driven threefold topological phase transition in monolayer $\mathrm{OsBr_2}$

Spin-orbit coupling (SOC) combined with electronic correlation can induce topological phase transition, producing novel electronic states. Here, we investigate the impact of SOC combined with correlation effects on physical properties of monolayer $\mathrm{OsBr_2}$, based on first-principles calculations with generalized gradient approximation plus $U$ (GGA+$U$) approach. With intrinsic out-of-plane magnetic anisotropy, $\mathrm{OsBr_2}$ undergoes threefold topological phase transition with increasing $U$, and valley-polarized quantum anomalous Hall insulator (VQAHI) to half-valley-metal (HVM) to ferrovalley insulator (FVI) to HVM to VQAHI to HVM to FVI transitions can be induced. These topological phase transitions are connected with sign-reversible Berry curvature and band inversion between $d_{xy}$/$d_{x^2-y^2}$ and $d_{z^2}$ orbitals. Due to $\bar{6}m2$ symmetry, piezoelectric polarization of $\mathrm{OsBr_2}$ is confined along the in-plane armchair direction, and only one $d_{11}$ is independent. For a given material, the correlation strength should be fixed, and $\mathrm{OsBr_2}$ may be a piezoelectric VQAHI (PVQAHI), piezoelectric HVM (PHVM) or piezoelectric FVI (PFVI). The valley polarization can be flipped by reversing the magnetization of Os atoms, and the ferrovalley (FV) and nontrivial topological properties will be suppressed by manipulating out-of-plane magnetization to in-plane one. In considered reasonable $U$ range, the estimated Curie temperatures all are higher than room temperature. Our findings provide a comprehensive understanding on possible electronic states of $\mathrm{OsBr_2}$, and confirm that strong SOC combined with electronic correlation can induce multiple quantum phase transition.

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preprint2022arXiv

Piezoelectric ferromagnetism in Janus monolayer YBrI: a first-principle prediction

Coexistence of intrinsic ferromagnetism and piezoelectricity, namely piezoelectric ferromagnetism (PFM), is crucial to advance multifunctional spintronic technologies. In this work, we demonstrate that Janus monolayer YBrI is a PFM, which is dynamically, mechanically and thermally stable. Electronic correlation effects on physical properties of YBrI are investigated by using generalized gradient approximation plus $U$ (GGA+$U$) approach. For out-of-plane magnetic anisotropy, YBrI is a ferrovalley (FV) material, and the valley splitting is larger than 82 meV in considered $U$ range. The anomalous valley Hall effect (AVHE) can be achieved under an in-plane electric field. However, for in-plane magnetic anisotropy, YBrI is a common ferromagnetic (FM) semiconductor. When considering intrinsic magnetic anisotropy, the easy axis of YBrI is always in-plane with magnetic anisotropy energy (MAE) from 0.309 meV to 0.237 meV ($U$=0.0 eV to 3.0 eV). However, the magnetization can be adjusted from the in-plane to off-plane direction by external magnetic field, and then lead to the occurrence of valley polarization. Moreover, missing centrosymmetry along with mirror symmetry breaking results in both in-plane and out-of-plane piezoelectricity in YBrI monolayer. At a typical $U$=2.0 eV, the $d_{11}$ is predicted to be -5.61 pm/V, which is higher than or compared with ones of other two-dimensional (2D) known materials. The electronic and piezoelectric properties of YBrI can be effectively tuned by applying a biaxial strain. For example, tensile strain can enhance valley splitting and $d_{11}$ (absolute value). The predicted Curie temperature of YBrI is higher than those of experimentally synthesized 2D ferromagnetic materials $\mathrm{CrI_3}$ and $\mathrm{Cr_2Ge_2Te_6}$.

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preprint2022arXiv

Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response

The combination of piezoelectricity with nontrivial topological insulating phase in two-dimensional (2D) systems, namely piezoelectric quantum spin Hall insulator (PQSHI), is intriguing for exploring novel topological states toward the development of high-speed and dissipationless electronic devices. In this work, we predict a PQSHI Janus monolayer VCClBr constructed from $\mathrm{VCCl_2}$, which is dynamically, mechanically and thermally stable. In the absence of spin orbital coupling (SOC), VCClBr is a narrow gap semiconductor with gap value of 57 meV, which is different from Dirac semimetal $\mathrm{VCCl_2}$. The gap of VCClBr is due to built-in electric field caused by asymmetrical upper and lower atomic layers, which is further confirmed by external-electric-field induced gap in $\mathrm{VCCl_2}$. When including SOC, the gap of VCClBr is improved to 76 meV, which is larger than the thermal energy of room temperature (25 meV). The VCClBr is a 2D topological insulator (TI), which is confirmed by $Z_2$ topological invariant and nontrivial one-dimensional edge states. It is proved that the nontrivial topological properties of VCClBr are robust against strain (biaxial and uniaxial cases) and external electric field. Due to broken horizontal mirror symmetry, only out-of-plane piezoelectric response can be observed, when biaxial or uniaxial in-plane strain is applied. The predicted piezoelectric strain coefficients $d_{31}$ and $d_{32}$ are -0.425 pm/V and -0.219 pm/V, which are higher than or compared with ones of many 2D materials. Finally, another two Janus monolayer VCFBr and VCFCl (dynamically unstable) are constructed, and they are still PQSHIs. Moreover, their $d_{31}$ and $d_{32}$ are higher than ones of VCClBr, and the $d_{31}$ (absolute value) of VCFBr is larger than one.

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preprint2022arXiv

Valley-polarized quantum anomalous Hall insulator in monolayer $\mathrm{RuBr_2}$

Coexistence of intrinsic ferrovalley (FV) and nontrivial band topology attracts intensive interest both for its fundamental physics and for its potential applications, namely valley-polarized quantum anomalous Hall insulator (VQAHI). Here, based on first-principles calculations by using generalized gradient approximation plus $U$ (GGA+$U$) approach, the VQAHI induced by electronic correlation or strain can occur in monolayer $\mathrm{RuBr_2}$. For perpendicular magnetic anisotropy (PMA), the ferrovalley (FV) to half-valley-metal (HVM) to quantum anomalous Hall (QAH) to HVM to FV transitions can be driven by increasing electron correlation $U$. However, there are no special QAH states and valley polarization for in-plane magnetic anisotropy. By calculating actual magnetic anisotropy energy (MAE), the VQAHI indeed can exist between two HVM states due to PMA, a unit Chern number/a chiral edge state and spontaneous valley polarization. The increasing $U$ can induce VQAHI, which can be explained by sign-reversible Berry curvature or band inversion between $d_{xy}$/$d_{x^2-y^2}$ and $d_{z^2}$ orbitals. Even though the real $U$ falls outside the range, the VQAHI can be achieved by strain. Taking $U$$=$2.25 eV as a concrete case, the monolayer $\mathrm{RuBr_2}$ can change from a common ferromagentic (FM) semiconductor to VQAHI under about 0.985 compressive strain. It is noted that the edge states of VQAHI are chiral-spin-valley locking, which can achieve complete spin and valley polarizations for low-dissipation electronics devices. Both energy band gap and valley splitting of VQAHI in monolayer $\mathrm{RuBr_2}$ are higher than the thermal energy of room temperature (25 meV), which is key at room temperature for device applications.

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preprint2021arXiv

A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdCl_2}$ monolayer

Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic anisotropy (PMA), valence band maximum (VBM)/conduction band minimum (CBM) at valley points, strong ferromagnetic (FM) coupling and proper valley splitting. In this work, the monolayer $\mathrm{GdCl_2}$ is proposed as a potential candidate material for valleytronic applications by the first-principles calculations. It is proved that monolayer $\mathrm{GdCl_2}$ is a FM semiconductor with the easy axis along out of plane direction and strong FM coupling. A spontaneous valley polarization with a valley splitting of 42.3 meV is produced due to its intrinsic ferromagnetism and spin orbital coupling (SOC). Although the VBM of unstrained monolayer $\mathrm{GdCl_2}$ is away from valley points, a very small compressive strain (about 1\%) can make VBM move to valley points. We propose a possible way to realize anomalous valley Hall effect in monolayer $\mathrm{GdCl_2}$ by piezoelectric effect, not an external electric field, namely piezoelectric anomalous valley Hall effect (PAVHE). This phenomenon could be classified as piezo-valleytronics, being similar to piezotronics and piezophototronics. The only independent piezoelectric strain coefficient $d_{11}$ is -2.708 pm/V, which is comparable to one of classical bulk piezoelectric material $α$-quartz ($d_{11}$=2.3 pm/V). The biaxial in-plane strain and electronic correlation effects are considered to confirm the reliability of our results. Finally, the monolayer $\mathrm{GdF_2}$ is predicted to be a ferrovalley material with dynamic and mechanical stabilities, PMA, VBM at valley points, strong FM coupling, valley splitting of 47.6 meV, and $d_{11}$ of 0.584 pm/V.

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preprint2021arXiv

Sensitive electronic correlation effects on electronic properties in ferrovalley material Janus FeClF monolayer

The electronic correlation may have essential influence on electronic structures in some materials with special structure and localized orbital distribution. In this work, taking Janus monolayer FeClF as a concrete example, the correlation effects on its electronic structures are investigated by using generalized gradient approximation plus $U$ (GGA+$U$) approach. For perpendicular magnetic anisotropy (PMA), the increasing electron correlation effect can induce the ferrovalley (FV) to half-valley-metal (HVM) to quantum anomalous Hall (QAH) to HVM to FV transitions. For QAH state, there are a unit Chern number and a chiral edge state connecting the conduction and valence bands. The HVM state is at the boundary of the QAH phase, whose carriers are intrinsically 100\% valley polarized. With the in-plane magnetic anisotropy, no special QAH states and prominent valley polarization are observed. However, for both out-of-plane and in-plane magnetic anisotropy, sign-reversible Berry curvature can be observed with increasing $U$. It is found that these phenomenons are related with the change of $d_{xy}$/$d_{x^2-y^2}$ and $d_{z^2}$ orbital distributions and different magnetocrystalline directions. It is also found that the magnetic anisotropy energy (MAE) and Curie temperature strongly depend on the $U$. With PMA, taking typical $U=$2.5 eV, the electron valley polarization can be observed with valley splitting of 109 meV, which can be switched by reversing the magnetization direction. The analysis and results can be readily extended to other nine members of monolayer FeXY (X/Y=F, Cl, Br and I) due to sharing the same Fe-dominated low-energy states and electronic correlations with FeClF monolayer.

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preprint2021arXiv

Valley polarization transition driven by biaxial strain in Janus $\mathrm{GdClF}$ monolayer

The valley degrees of freedom of carriers in crystals is useful to process information and perform logic operations, and it is a key factor for valley application to realize the valley polarization. Here, we propose a model that the valley polarization transition at different valley points (-K and K points) is produced by biaxial strain. By the first-principle calculations, we illustrate our idea with a concrete example of Janus $\mathrm{GdClF}$ monolayer. The predicted $\mathrm{GdClF}$ monolayer is dynamically, mechanically and thermally stable, and is a ferromagnetic (FM) semiconductor with perpendicular magnetic anisotropy (PMA), valence band maximum (VBM) at valley points and high Curie temperature ($T_C$). Due to its intrinsic ferromagnetism and spin orbital coupling (SOC), a spontaneous valley polarization will be induced, but the valley splitting is only -3.1 meV, which provides an opportunity to achieve valley polarization transition at different valley points by strain. In considered strain range ($a/a_0$: 0.94$\sim$1.06), the strained GdClF monolayer has always energy bandgap, strong FM coupling and PMA. The compressive strain is in favour of -K valley polarization, while the tensile strain makes for K valley polarization. The corresponding valley splitting at 0.96 and 1.04 strain are -44.5 meV and 29.4 meV, which are higher than the thermal energy of room temperature (25 meV). Due to special Janus structure, both in-plane and out-of-plane piezoelectric polarizations can be observed. It is found that the direction of in-plane piezoelectric polarizations can be overturned by strain, and the $d_{11}$ at 0.96 and 1.04 strain are -1.37 pm/V and 2.05 pm/V. Our works pave the way to design the ferrovalley material as multifunctional valleytronics and piezoelectric devices by strain.

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preprint2016arXiv

Floquet Weyl fermions in circularly-polarised-light-irradiated three-dimensional stacked graphene systems

Using Floquet theory, we illustrate that Floquet Weyl fermions can be created in circularly-polarised-light-irradiated three-dimensional stacked graphene systems. One or two semi-Dirac points can be formed due to overlapping of Floquet sub-bands. Each pair of Weyl points have a two-component semi-Dirac point parent, instead of a four-component Dirac point parent. Decreasing the light frequency will make the Weyl points move in the momentum space, and the Weyl points can approach to the Dirac points when the frequency becomes very small. The frequency-amplitude phase diagram is worked out. It is shown that there exist Fermi arcs in the surface Brillouin zones in circularly-polarised-light-irradiated semi-infinitely-stacked and finitely-multilayered graphene systems. The Floquet Weyl points emerging due to the overlap of Floquet sub-bands provide a new platform to study Weyl fermions.

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preprint2016arXiv

Two-dimensional ReN$_2$ materials from first principles

The discovery of graphene makes it highly desirable to seek new two-dimensional materials. Through first-principles investigation, we predict two-dimensional materials of ReN$_{2}$: honeycomb and tetragonal structures. The phonon spectra establish the dynamical stability for both of the two structures, and the calculated in-plane stiffness constants proves their mechanical stability. The energy bands near the Fermi level consist of N-p and Re-d orbitals for the honeycomb structure, and are mainly from Re d orbitals for the tetragonal structure. While the tetragonal structure is non-magnetic, the honeycomb structure has N-based ferromagnetism, which will transit to anti-ferromagnetism under 14$\%$ biaxial strain. The calculated electron localization function and spin density indicate that direct N-N bond can occur only in the honeycomb structure. The ferromagnetism allows us to distinguish the two 2D phases easily. The tetragonal phase has lower energy than the honeycomb one, which means that the tetragonal phase is more stable, but the hexagonal phase has much larger bulk, shear, and Young's muduli than the tetragonal phase. The tetragonal phase is a three-bands metal, and the hexagonal phase is a ferromagnetic semi-metal. The special structural, electronic, magnetic, and optical properties in the honeycomb and tetragonal structures make them promising for novel applications.

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preprint2016arXiv

Two-Dimensional Wide-Band-Gap II-V Semiconductors with a Dilated Graphene-like Structure

Since the advent of graphene, two-dimensional (2D) materials become very attractive and there is growing interest to explore new 2D beyond graphene. Here, through density functional theory (DFT) calculations, we predict 2D wide-band-gap II-V semiconductor materials of M$_3$X$_2$ (M=Zn, Cd and X=N, P, As) with a dilated graphene-like honeycomb structure. The structure features that the group-V X atoms form two X-atomic planes symmetrically astride the centering group-IIB M atomic plane. The 2D Zn$_3$N$_2$, Zn$_3$P$_2$, and Zn$_3$As$_2$ are shown to have direct band gaps of 2.87, 3.81, and 3.55 eV, respectively, and the 2D Cd$_3$N$_2$, Cd$_3$P$_2$, and Cd$_3$As$_2$ exhibit indirect band gaps of 2.74, 3.51, and 3.29 eV, respectively. Each of the six 2D materials is shown to have effective carrier (either hole or electron) masses down to $0.03\sim 0.05$ $m_0$. The structural stability and feasibility of experimental realization of these 2D materials has been shown in terms of DFT phonon spectra and total energy comparison with related existing bulk materials. On the experimental side, there already are many similar two-coordinate structures of Zn and other transition metals in various organic materials, which can be considered to support our DFT prediction. Therefore, these 2D semiconductors can enrich the family of 2D electronic materials and may have promising potential for achieving novel transistors and optoelectronic devices.

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preprint2015arXiv

Exact magnetic field control of nitrogen-vacancy center spin for realizing fast quantum logic gates

The negatively charged nitrogen-vacancy (NV) center spin in diamond can be used to realize quantum computation and to sense magnetic fields. Its spin triplet consists of three levels labeled with its spin z-components of +1, 0, and -1. Without external field, the +1 and -1 states are degenerate and higher than the 0 state due to the zero-field splitting. By taking the symmetrical and anti-symmetrical superpositions of the +1 and -1 states as our qubit basis, we obtain exact evolution operator of the NV center spin under time-dependent magnetic field by mapping the three-level system on time-dependent quantum two-level systems with exact analytical solutions. With our exact evolution operator of the NV center spin including three levels, we show that arbitrary qubits can be prepared from the starting 0 state and arbitrary rapid quantum logic gates of these qubits can be realized with magnetic fields. In addition, it is made clear that the typical quantum logic gates can be accomplished within a few nanoseconds and the fidelity can be very high because only magnetic field strength needs to be controlled in this approach. These results should be useful to realizing quantum computing with the NV center spin systems in diamond and exploring other effects and applications.

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preprint2015arXiv

Hidden chiral symmetry protected $\mathbb{Z}\oplus\mathbb{Z}$ topological insulators in a ladder dimer model

We construct a two-leg ladder dimer model by using two orbitals instead of one in Su-Schrieffer-Heeger (SSH) dimer chain and find out a chiral symmetry in it. In this model, the otherwise-hidden additional chiral symmetry allows us to define two chiral massless fermions and show that there exist interesting topological states characterized by $\mathbb{Z}\oplus\mathbb{Z}$ and corresponding zero mode edge states. Our complete phase diagram reveals that there is an anomalous topologically nontrivial region in addition to the normal one similar to that of SSH model. The anomalous region features that the inter-cell hopping constants can be much smaller than the intra-cell ones, being opposite to the normal region, and the zero mode edge states do not have well-defined parity each. Finally, we suggest that this ladder dimer model can be realized in double-well optical lattices, ladder polymer systems, and adatom double chains on semiconductor surfaces.

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preprint2015arXiv

Intrinsic life-time and external manipulation of Neel states in antiferromagnetic adatom spins on semiconductor surfaces

It has been proposed that antiferromagnetic Fe adatom spins on semiconductor Cu-N surfaces can be used to store information [S. Loth {\it et al}, Science \textbf{335}, 196 (2012)]. Here, we investigate spin dynamics of such antiferromagnetic systems through Monte Carlo simulations. We find out the temperature and size laws of switching rates of Néel states and show that the Néel states can become stable enough for the information storage when the number of spins reaches to one or two dozens of the Fe spins. We also explore promising methods for manipulating the Néel states. These could help realize information storage with such antiferromagnetic spin systems.

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preprint2015arXiv

Long-lived Neel states in antiferromagnetic quantum spin chains with strong uniaxial anisotropy for atomic-scale antiferromagnetic spintronics

It has been experimentally established that magnetic adatoms on surfaces can be arranged to form antiferromagnetic quantum spin chains with strong uniaxial anisotropy and Neel states in such spin systems can be used to realize information storage. Here, we investigate eigen states, quantum spin dynamics, and life times of Neel states in short antiferromagnetic quantum spin chains with strong uniaxial anisotropy on the basis of numerical exact diagonalization method. We show rigorously that as long as the uniaxial anisotropy is very strong, the ground state and the first excitation state, being nearly degenerate, are safely separated from the other states and thus dominate the quantum dynamics of the Neel states. Through further numerical analysis, we achieve a powerful life-time expression of the Neel states for arbitrary spin and model parameters. It is interesting that for the famous Fe adatom chains on Cu$_2$N surface, 14 or 16 Fe adatoms are enough to obtain a practical long life-time for Neel state storage of information. These should be applicable to other similar antiferromagnetic spin systems for atomic-scale antiferromagnetic spintronics.

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preprint2014arXiv

Electrical switching effect of a single-unit-cell CrO2 layer on rutile TiO2 surface

Rutile CrO2 is the most important half-metallic material with nearly 100% spin polarization at the Fermi level, and rutile TiO2 is a wide-gap semiconductor with many applications. Here we show through first-principles investigation that a single-unit-cell CrO2 layer on rutile TiO2 (001) surface is ferromagnetic and semiconductive with a gap of 0.54 eV, and its electronic state transits abruptly to a typical metallic state when an electrical field is applied. Consequently, this makes an interesting electrical switching effect which may be useful in designing spintronic devices.

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preprint2014arXiv

High-Curie-temperature ferrimagnetism and ferroelectricity in Bi2FeMoO6

BiFeO3 is the most famous multiferroic material, but its G-type antiferromagnetism is highly desirable to be replaced by strong macroscopic magnetism beyond room temperature. Here we obtain double perovskite Bi2FeMoO6 with R3 (#146) space group by substituting Mo for 50% Fe in BiFeO3. Our first-principles calculated results show that it is a semiconductor with gap reaching to 0.725 eV, its net magnetic moment is 2μ_B per formula unit, and its ferroelectric polarization is 85μC/cm^2. This ferroelctricity is comparable with that of BiFeO3, but here the magnetism is a strong ferrimagnetism with Curie temperature of 650 K. Our first-principles phonon spectra establishes that this R3 phase is stable. Electric polarization and magnetic easy axis are shown to be in pseudo-cubic [111] axis. Our further analysis shows that the multiferroic mechanism is similar to that in BiFeO3. Therefore, this Bi2FeMoO6 can be used to achieve strong macroscopic magnetism and ferroelectricity well above room temperature, being useful for designing new multifunctional materials and devices.

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preprint2014arXiv

Monte Carlo simulated dynamical magnetization of single-chain magnets

Here, a dynamical Monte-Carlo (DMC) method is used to study temperature-dependent dynamical magnetization of famous Mn2Ni system as typical example of single-chain magnets with strong magnetic anisotropy. Simulated magnetization curves are in good agreement with experimental results under typical temperatures and sweeping rates, and simulated coercive fields as functions of temperature are also consistent with experimental curves. Further analysis indicates that the magnetization reversal is determined by both thermal-activated effects and quantum spin tunnelings. These can help explore basic properties and applications of such important magnetic systems.

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preprint2014arXiv

Re-t2g-splitting-driven semiconductor gaps in ferrimagnetic double perovskite Ca2MReO6 (M=Cr,Fe) from first principles

Motivated by the observation of nonmetallic nature in double perovskite Ca2CrReO6 and Ca2FeReO6 with high magnetic Curie temperatures of 360 and 522 K, we systematically investigate the structural, electronic, and magnetic properties of Ca2MReO6 (M=Cr,Fe) using the full-potential linear augmented plane wave (FP-LAPW) method within the density functional theory. Our full optimization confirms the stable ground-state structure with $P2_1/n$ symmetry. The modified Becke-Johnson (mBJ) exchange potential is used for investigating electronic structures. Our mBJ calculation shows that they are both ferrimagnetic semiconductors with semiconductor gaps of 0.38 eV and 0.05 eV, respectively, in contrast with wrong metallic phases from the generalized gradient approximation (GGA). The origin of semiconductor gap is due to the further distortion of ReO$_6$ octahedra caused by John-Teller effect, which drives the three partially-occupied Re $t_{2g}$ bands split into two fully-filled bands and one empty band in the minority-spin channel. With the spin-orbit coupling (SOC) taken into account, the Ca2MReO6 (M=Cr,Fe) shows high magneto-crystalline anisotropy (MCA) with the magnetic easy axis along pseudocubic [010] direction, and the total magnetic moments increase by 0.209$μ_B$ and 0.258$μ_B$ per formula unit, respectively, due to the strong SOC effect on Re ion. Although reducing to 0.31 and 0.03 eV, the semiconductor gaps remain open in spite of the SOC broadening of the Re $t_{2g}$-related bands. Therefore, our DFT investigation with mBJ has established the correct ferrimagnetic semiconductor ground state for the double perovskites Ca2MReO6 (M=Cr,Fe). This mechanism, different from that in double perovskite Sr2CrOsO6, can help understand physical properties of other similar compounds.

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preprint2012arXiv

Electronic structure and magnetic and optical properties of double perovskite Bi2FeCrO6 from first-principles investigation

Double perovskite Bi$_2$FeCrO$_6$, related with BiFeO$_3$, is very interesting because strong ferroelectricity and high magnetic Curie temperature beyond room temperature are observed in it. However, existing density-functional-theory (DFT) studies, using pseudo-potentials, produce metallic ground state under the local density approximation (LDA) and need LDA+U method to yield needed nonmetallic ground state, resulting in low magnetic Curie temperature (below 130 K). Here, we optimize its crystal structure and then investigate its electronic structure and magnetic and optical properties by combining the full-potential augmented plane wave method with Monte Carlo simulation. Our optimized structure is a robust ferrimagnetic semiconductor. This nonmetallic phase is formed due to crystal field splitting and spin exchange splitting, in contrast to Mott-Hubbard states in previous DFT studies. Spin exchange constants and optical properties are calculated. Our ab initio magnetic Curie temperature is 450 K, much higher than previous DFT-based value and consistent with experimental results. Our study and analysis reveals that the main magnetic mechanism is an antiferromagnetic superexchange between Fe and Cr over the intermediate O atom. These results are useful to understanding such perovskite materials and exploring their potential applications.

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preprint2012arXiv

Promising ferrimagnetic double perovskite oxides towards high spin polarization at high temperature

We predict through our first-principles calculations that four double perovskite oxides of Bi2ABO6 (AB = FeMo, MnMo, MnOs, CrOs) are half-metallic ferrimagnets. Our calculated results shows that the four optimized structures have negative formation energy, from -0.42 to -0.26 eV per formula unit, which implies that they could probably be realized. In the case of Bi2FeMoO6, the half-metallic gap and Curie temperature are predicted to reach to 0.71 eV and 650 K, respectively, which indicates that high spin polarization could be kept at high temperatures far beyond room temperature. It is believed that some of them could be synthesized soon and would prove useful for spintronic applications.

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preprint2010arXiv

Dynamical Monte Carlo investigation of spin reversals and nonequilibrium magnetization of single-molecule magnets

In this paper, we combine thermal effects with Landau-Zener (LZ) quantum tunneling effects in a dynamical Monte Carlo (DMC) framework to produce satisfactory magnetization curves of single-molecule magnet (SMM) systems. We use the giant spin approximation for SMM spins and consider regular lattices of SMMs with magnetic dipolar interactions (MDI). We calculate spin reversal probabilities from thermal-activated barrier hurdling, direct LZ tunneling, and thermal-assisted LZ tunnelings in the presence of sweeping magnetic fields. We do systematical DMC simulations for Mn$_{12}$ systems with various temperatures and sweeping rates. Our simulations produce clear step structures in low-temperature magnetization curves, and our results show that the thermally activated barrier hurdling becomes dominating at high temperature near 3K and the thermal-assisted tunnelings play important roles at intermediate temperature. These are consistent with corresponding experimental results on good Mn$_{12}$ samples (with less disorders) in the presence of little misalignments between the easy axis and applied magnetic fields, and therefore our magnetization curves are satisfactory. Furthermore, our DMC results show that the MDI, with the thermal effects, have important effects on the LZ tunneling processes, but both the MDI and the LZ tunneling give place to the thermal-activated barrier hurdling effect in determining the magnetization curves when the temperature is near 3K. This DMC approach can be applicable to other SMM systems, and could be used to study other properties of SMM systems.

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preprint2010arXiv

Improved half-metallic ferromagnetism of transition-metal pnictides and chalcogenides calculated with a modified Becke-Johnson exchange potential

We use a density-functional-theory (DFT) approach with a modified Becke-Johnson exchange plus local density approximation (LDA) correlation potential (mBJLDA) [semi-local, orbital-independent, producing accurate semiconductor gaps. see F. Tran and P. Blaha, Phys. Rev. Lett. 102, 226401 (2009)] to investigate the electronic structures of zincblende transition-metal (TM) pnictides and chalcogenides akin to semiconductors. Our results show that this potential does not yield visible changes in wide TM d-t_{2g} bands near the Fermi level, but makes the occupied minority-spin p-bands lower by 0.25~0.35 eV and the empty (or nearly empty) minority-spin e_g bands across the Fermi level higher by 0.33~0.73 eV. Consequently, mBJLDA, having no atom-dependent parameters, makes zincblende MnAs become a truly half-metallic (HM) ferromagnet with a HM gap (the key parameter) 0.318eV, being consistent with experiment. For zincblende MnSb, CrAs, CrSb, CrSe, or CrTe, the HM gap is enhanced by 19~56% compared to LDA and generalized gradient approximation results. The improved HM ferromagnetism can be understood in terms of the mBJLDA-enhanced spin exchange splitting.

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preprint2010arXiv

Robust half-metallic ferromagnet of cubic VGe3Si4

To seek half-metallic ferromagnets compatible with the GeSi semiconductor, we use state-of-the-art density-functional-theory methods to study cubic $\mathrm{VGe_3Si_4}$. After optimizing its crystal structure with various magnetic orders considered, we find the ferromagnetic structure is the ground state phase and investigate its stability, and then study its spin-resolved electronic structure with an improved method. Our calculated results show that the cubic $\mathrm{VGe_3Si_4}$ is a half-metallic ferromagnet with half-metallic gap 350 meV, and it is structurally stable against deformations and magnetically robust against antiferromagnetic fluctuations. These results make us believe that the cubic $\mathrm{VGe_3Si_4}$ could be synthesized as good thin films soon and used in practical spintronic devices.

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preprint2009arXiv

Stable half-metallic ferromagnetism in nonstoichiometric cubic binary chromium chalcogenides

We find that three nonstoichiometric cubic binary chromium chalcogenides, namely Cr3S4, Cr3Se4, and Cr3Te4, are stable half-metallic ferromagnets with wide half-metallic gaps on the basis of systematic state-of-the-arts first-principles calculations. We optimize their structures, and then calculate their magnetic moments, electronic structures, formation heats, and elastic moduli and investigate their structural stability and robustness of ferromagnetism against antiferromagnetic fluctuations. Our calculated results show that the three sulvanite phases are structurally stable and ferromagnetically robust, and hence could be realized as epitaxial thin films. We attribute the structural and ferromagnetic stability and the better half-metallicity to their special effective Cr valence 2.667+. These findings will open doors for much more high-performance spintronic materials compatible with current semiconductor technology.

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preprint2009arXiv

Temperature-dependent striped antiferromagnetism of LaFeAsO in a Green's function approach

We use a Green's function method to study the temperature-dependent average moment and magnetic phase-transition temperature of the striped antiferromagnetism of LaFeAsO, and other similar compounds, as the parents of FeAs-based superconductors. We consider the nearest and the next-nearest couplings in the FeAs layer, and the nearest coupling for inter-layer spin interaction. The dependence of the transition temperature TN and the zero-temperature average spin on the interaction constants is investigated. We obtain an analytical expression for TN and determine our temperature-dependent average spin from zero temperature to TN in terms of unified self-consistent equations. For LaFeAsO, we obtain a reasonable estimation of the coupling interactions with the experimental transition temperature TN = 138 K. Our results also show that a non-zero antiferromagnetic (AFM) inter-layer coupling is essential for the existence of a non-zero TN, and the many-body AFM fluctuations reduce substantially the low-temperature magnetic moment per Fe towards the experimental value. Our Green's function approach can be used for other FeAs-based parent compounds and these results should be useful to understand the physical properties of FeAs-based superconductors.

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preprint2009arXiv

Unified nonequilibrium dynamical theory for exchange bias and training effects

We investigate the exchange bias and training effects in the FM/AF heterostructures using a unified Monte Carlo dynamical approach. This real dynamical method has been proved reliable and effective in simulating dynamical magnetization of nanoscale magnetic systems. The magnetization of the uncompensated AF layer is still open after the first field cycling is finished. Our simulated results show obvious shift of hysteresis loops (exchange bias) and cycling dependence of exchange bias (training effect) when the temperature is below 45 K. The exchange bias fields decrease with decreasing the cooling rate or increasing the temperature and the number of the field cycling. With the simulations, we show the exchange bias can be manipulated by controlling the cooling rate, the distributive width of the anisotropy energy, or the magnetic coupling constants. Essentially, these two effects can be explained on the basis of the microscopical coexistence of both reversible and irreversible moment reversals of the AF domains. Our simulated results are useful to really understand the magnetization dynamics of such magnetic heterostructures. This unified nonequilibrium dynamical method should be applicable to other exchange bias systems.

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preprint1999arXiv

Two-dimensional pattern formation in surfactant-mediated epitaxial growth

The effects of a surfactant on two-dimensional pattern formation in epitaxial growth are explored theoretically using a simple model, in which an adatom becomes immobile only after overcoming a large energy barrier as it exchanges positions with a surfactant atom, and subsequent growth from such a seed is further shielded. Within this model, a fractal-to-compact island shape transition can be induced by either decreasing the growth temperature or increasing the deposition flux. This and other intriguing findings are in excellent qualitative agreement with recent experiments.

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