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Weizhe Edward Liu

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cond-mat.mes-hall cond-mat.quant-gas

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preprint2020arXiv

Radio-frequency response and contact of impurities in a quantum gas

We investigate the radio-frequency spectroscopy of impurities interacting with a quantum gas at finite temperature. In the limit of a single impurity, we show using Fermi's golden rule that introducing (or injecting) an impurity into the medium is equivalent to ejecting an impurity that is initially interacting with the medium, since the "injection" and "ejection" spectral responses are simply related to each other by an exponential function of frequency. Thus, the full spectral information for the quantum impurity is contained in the injection spectral response, which can be determined using a range of theoretical methods, including variational approaches. We use this property to compute the finite-temperature equation of state and Tan contact of the Fermi polaron. Our results for the contact of a mobile impurity are in excellent agreement with recent experiments and we find that the finite-temperature behavior is qualitatively different compared to the case of infinite impurity mass.

preprint2020arXiv

Theory of radio-frequency spectroscopy of impurities in quantum gases

We present a theory of radio-frequency spectroscopy of impurities interacting with a quantum gas at finite temperature. By working in the canonical ensemble of a single impurity, we show that the impurity spectral response is directly connected to the finite-temperature equation of state (free energy) of the impurity. We consider two different response protocols: "injection", where the impurity is introduced into the medium from an initially non-interacting state; and "ejection", where the impurity is ejected from an initially interacting state with the medium. We show that there is a simple mapping between injection and ejection spectra, which is connected to the detailed balance condition in thermal equilibrium. To illustrate the power of our approach, we specialize to the case of the Fermi polaron, corresponding to an impurity atom that is immersed in a non-interacting Fermi gas. For a mobile impurity with a mass equal to the fermion mass, we employ a finite-temperature variational approach to obtain the impurity spectral response. We find a striking non-monotonic dependence on temperature in the impurity free energy, the contact, and the radio-frequency spectra. For the case of an infinitely heavy Fermi polaron, we derive exact results for the finite-temperature free energy, thus generalizing Fumi's theorem to arbitrary temperature. We also determine the exact dynamics of the contact after a quench of the impurity-fermion interactions. Finally, we show that the injection and ejection spectra obtained from the variational approach compare well with the exact spectra, thus demonstrating the accuracy of our approximate method.

preprint2016arXiv

Coulomb drag in topological insulator films

We study Coulomb drag between the top and bottom surfaces of topological insulator films. We derive a kinetic equation for the thin-film spin density matrix containing the full spin structure of the two-layer system, and analyze the electron-electron interaction in detail in order to recover all terms responsible for Coulomb drag. Focusing on typical topological insulator systems, with film thicknesses d up to 6 nm, we obtain numerical and approximate analytical results for the drag resistivity $ρ_\text{D}$ and find that $ρ_\text{D}$ is proportional to $T^2d^{-4}n^{-3/2}_{\text{a}}n^{-3/2}_{\text{p}}$ at low temperature T and low electron density $n_{\text{a,p}}$, with a denoting the active layer and p the passive layer. In addition, we compare $ρ_{\text{D}}$ with graphene, identifying qualitative and quantitative differences, and we discuss the multi valley case, ultra thin films and electron-hole layers.

preprint2014arXiv

Screening, Friedel oscillations and low-temperature conductivity in topological insulator thin films

In thin topological insulator films, the top and bottom surfaces are coupled by tunneling, which restores backscattering and strongly affects screening. We calculate the dielectric function in the random phase approximation obtaining a closed-form result. Unlike independent TI surfaces, the dielectric function of thin films exhibits a valley as a function of wavenumber $q$ and tunneling, as well as a cusp at $q=2k_F$, with $k_F$ the Fermi wave vector. As a result of the cusp, Friedel oscillations decay with distance $r$ as $\sin(2k_Fr)/(2k_Fr)^2$. We determine the longitudinal conductivity $σ$ in the first Born approximation at low temperatures where screened impurities provide the dominant scattering mechanism. At high electron densities $n_e$, $σ\propto n_e$, while at low densities $σ\propto n_e^{3/2}$.