Abstract
In thin topological insulator films, the top and bottom surfaces are coupled by tunneling, which restores backscattering and strongly affects screening. We calculate the dielectric function in the random phase approximation obtaining a closed-form result. Unlike independent TI surfaces, the dielectric function of thin films exhibits a valley as a function of wavenumber and tunneling, as well as a cusp at , with the Fermi wave vector. As a result of the cusp, Friedel oscillations decay with distance as . We determine the longitudinal conductivity in the first Born approximation at low temperatures where screened impurities provide the dominant scattering mechanism. At high electron densities , , while at low densities .
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