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Weiwei Zhao

Weiwei Zhao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallcond-mat.str-elcond-mat.softCryptography and Securityphysics.app-phphysics.ins-detphysics.opticsSound

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Published work

16 published item(s)

preprint2026arXiv

Vulnerabilities of Audio-Based Biometric Authentication Systems Against Deepfake Speech Synthesis

As audio deepfakes transition from research artifacts to widely available commercial tools, robust biometric authentication faces pressing security threats in high-stakes industries. This paper presents a systematic empirical evaluation of state-of-the-art speaker authentication systems based on a large-scale speech synthesis dataset, revealing two major security vulnerabilities: 1) modern voice cloning models trained on very small samples can easily bypass commercial speaker verification systems; and 2) anti-spoofing detectors struggle to generalize across different methods of audio synthesis, leading to a significant gap between in-domain performance and real-world robustness. These findings call for a reconsideration of security measures and stress the need for architectural innovations, adaptive defenses, and the transition towards multi-factor authentication.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nontrivial topological states in BaSn5 superconductor probed by de Haas-van Alphen quantum oscillations

We report herein the nontrivial topological states in an intrinsic type-II superconductor BaSn5 (Tc ~ 4.4 K) probed via measuring the magnetizations, specific heat, de Haas-van Alphen (dHvA) effect and performing first principles calculations. The first principles calculations reveal a topological nodal ring structure centering at the H point in the kz = π plane of the Brillouin zone (BZ), which could be gapped by spin-orbit coupling (SOC), yielding rather small gaps below and above the Fermi level about 0.04 eV and 0.14 eV, respectively. The SOC also results in a pair of Dirac points along the Γ-A direction and located ~ 0.2 eV above the Fermi level. The analysis of the dHvA quantum oscillations supports the calculations by revealing nontrivial Berry phase originated from three hole and one electron pockets related to the bands forming the Dirac cones. Our study thus provides an excellent avenue for investigating the interplay between superconductivity and nontrivial topological states.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The role of crosslinking density in surface stress and surface energy of soft solids

Surface stress and surface energy are two fundamental parameters that determine the surface properties of any materials. While it is commonly believed that the surface stress and surface energy of liquids are identical, the relationship between the two parameters in soft polymeric gels remains debatable. In this work, we measured the surface stress and surface energy of soft silicone gels with varying weight ratios of crosslinkers in soft wetting experiments. Above a critical density, $k_0$, the surface stress was found to increase significantly with crosslinking density while the surface energy remained unchanged. In this regime, we can estimate a non-zero surface elastic modulus that also increases with the ratio of crosslinkers. By comparing the surface mechanics of the soft gels with their bulk rheology, the surface properties near the critical density $k_0$ were found to be closely related to the underlying percolation transition of the polymer networks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Highly flexible electromagnetic interference shielding films based on ultrathin Ni/Ag composites on paper substrates

Highly flexible electromagnetic interference (EMI) shielding material with excellent shielding performance is of great significance to practical applications in next-generation flexible devices. However, most EMI materials suffer from insufficient flexibility and complicated preparation methods. In this study, we propose a new scheme to fabricate a magnetic Ni particle/Ag matrix composite ultrathin film on a paper surface. For a ~2 micro meter thick film on paper, the EMI shielding effectiveness (SE) was found to be 46.2 dB at 8.1 GHz after bending 200,000 times over a radius of ~2 mm. The sheet resistance (Rsq) remained lower than 2.30 Ohm after bending 200,000 times. Contrary to the change in Rsq, the EMI SE of the film generally increased as the weight ratio of Ag to Ni increased, in accordance with the principle that EMI SE is positively related with an increase in electrical conductivity. Desirable EMI shielding ability, ultrahigh flexibility, and simple processing provide this material with excellent application prospects.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetism-induced topological transition in EuAs3

The nature of the interaction between magnetism and topology in magnetic topological semimetals remains mysterious, but may be expected to lead to a variety of novel physics. We present $ab$ $initio$ band calculations, electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements on the magnetic semimetal EuAs$_3$, demonstrating a magnetism-induced topological transition from a topological nodal-line semimetal in the paramagnetic or the spin-polarized state to a topological massive Dirac metal in the antiferromagnetic (AFM) ground state at low temperature, featuring a pair of massive Dirac points, inverted bands and topological surface states on the (010) surface. Shubnikov-de Haas (SdH) oscillations in the AFM state identify nonzero Berry phase and a negative longitudinal magnetoresistance ($n$-LMR) induced by the chiral anomaly, confirming the topological nature predicted by band calculations. When magnetic moments are fully polarized by an external magnetic field, an unsaturated and extremely large magnetoresistance (XMR) of $\sim$ 2$\times10^5$ % at 1.8 K and 28.3 T is observed, likely arising from topological protection. Consistent with band calculations for the spin-polarized state, four new bands in quantum oscillations different from those in the AFM state are discerned, of which two are topologically protected. Nodal-line structures at the $Y$ point in the Brillouin zone (BZ) are proposed in both the spin-polarized and paramagnetic states, and the latter is proven by ARPES. Moreover, a temperature-induced Lifshitz transition accompanied by the emergence of a new band below 3 K is revealed. These results indicate that magnetic EuAs$_3$ provides a rich platform to explore exotic physics arising from the interaction of magnetism with topology.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The de Hass-van Alphen quantum oscillations in a three-dimensional Dirac semimetal TiSb2

We have used the de Hass-van Alphen (dHvA) effect to investigate the Fermi surface of high-quality crystalline TiSb2, which unveiled a nontrivial topologic nature by analyzing the dHvA quantum oscillations. Moreover, our analysis on the quantum oscillation frequencies associated with nonzero Berry phase when the magnetic field is parallel to both of the ab-plane and c-axis of TiSb2 finds that the Fermi surface topology has a three-dimensional (3D) feature. The results are supported by the first-principle calculations which revealed a symmetry-protected Dirac point appeared along the Γ-Z high symmetry line near the Fermi level. On the (001) surface, the bulk Dirac points are found to project onto the -Γ point with nontrivial surface states. Our finding will substantially enrich the family of 3D Dirac semimetals which are useful for topological applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The de Hass-van Alphen quantum oscillations in BaSn3 superconductor with multiple Dirac fermions

By measuring the de Hass-van Alphen effect and calculating the electronic band structure, we have investigated the bulk Fermi surface of the BaSn3 superconductor with a transition temperature of ~ 4.4 K. Striking de Haas-van Alphen (dHvA) quantum oscillations are observed when the magnetic field B is perpendicular to both (100) and (001) planes. Our analysis unveiled nontrivial Berry phase imposed in the quantum oscillations when B is perpendicular to (100), with two fundamental frequencies at 31.5 T and 306.7 T, which likely arise from two corresponding hole pockets of the bands forming a type-II Dirac point. The results are supported by the ab initio calculations indicating a type-II Dirac point setting and tilting along the high symmetric K-H line of the Brillouin zone, about 0.13 eV above the Fermi level. Moreover, the calculations also revealed other two type-I Dirac points on the high symmetric Γ-A direction, but slightly far below the Fermi level. The results demonstrate BaSn3 as an excellent platform for the study of not only exotic properties of different types of Dirac fermions in a single material, but also the interplay between nontrivial topological states and superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Bulk Fermi surface of the layered superconductor TaSe3 with three-dimensional strong topological insulator state

High magnetic field transport measurements and ab initio calculations on the layered superconductor TaSe3 have provided compelling evidences for the existence of a three-dimensional strong topological insulator state. Longitudinal magnetotransport measurements up to ~ 33 T unveiled striking Shubnikov-de Hass oscillations with two fundamental frequencies at 100 T and 175 T corresponding to a nontrivial electron Fermi pocket at the B point and a nontrivial hole Fermi pocket at the Γ point respectively in the Brillouin zone. However, calculations revealed one more electron pocket at the B point, which was not detected by the magnetotransport measurements, presumably due to the limited carrier momentum relaxation time. Angle dependent quantum oscillations by rotating the sample with respect to the magnetic field revealed clear changes in the two fundamental frequencies, indicating anisotropic electronic Fermi pockets. The ab initio calculations gave the topological Z2 invariants of (1; 100) and revealed a single Dirac cone on the (1 0 -1) surface at the X point with helical spin texture at a constant-energy contour, suggesting a strong topological insulator state. The results demonstrate TaSe3 an excellent platform to study the interplay between topological phase and superconductivity and a promising system for the exploration of topological superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states

Combination of different nontrivial topological states in a single material is capable of realizing multiple functionalities and exotic physics, but such materials are still very sparse. We report herein the results of magnetotransport measurements and ab initio calculations on single crystalline CaAl2Si2 semimetal. The transport properties could be well understood in connection with the two-band model, agreeing well with the theoretical calculations indicating four main sheets of Fermi surface consisting of three hole pockets centered at the Γ point and one electron pocket centered at the M point in the Brillouin zone. The single fundamental frequency imposed in the quantum oscillations of magnetoresistance corresponds to the electron Fermi pocket. Without spin-orbit coupling (SOC), the ab initio calculations suggest CaAl2Si2 as a system hosting a topological nodal-line setting around the Γ point in the Brillouin zone close to the Fermi level. Once including the SOC, the fragile nodal-line will be gapped and a pair of Dirac points emerge along the high symmetric Γ-A direction, which is about 1.22 eV below the Fermi level. The SOC can also induce a topological insulator state along the Γ-A direction with a gap of about 3 meV. The results demonstrate CaAl2Si2 as an excellent platform for the study of novel topological physics with multiple topological states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High-performance graphene photodetector by interfacial gating

Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the current photo-gating mechanism, the price for achieving ultra-high sensitivity is sacrificing the response time. Detecting weak signal within short response time is crucial especially in applications such as optical positioning, remote sensing, and biomedical imaging. In this work, we bridge the gap between ultra-fast response and ultra-high sensitivity by employing a graphene/SiO2/lightly-doped-Si architecture with revolutionary interfacial gating mechanism. Such device is capable to detect < 1 nW signal (with responsivity of ~1000 A W-1) and the spectral response extends from visible to near-infrared. More importantly, the photoresponse time of our device has been pushed to ~400 ns. The current device structure does not need complicated fabrication process and is fully compatible with the silicon technology. This work will not only open up a route to graphene-based high performance optoelectronic devices, but also have great potential in ultra-fast weak signal detection.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of the quantum-anomalous-Hall insulator to Anderson insulator quantum phase transition and its scaling behavior

Fundamental insight into the nature of the quantum phase transition from a superconductor to an insulator in two dimensions, or from one plateau to the next or to an insulator in quantum Hall effect, has been revealed through the study of its scaling behavior. Here, we report on the experimental observation of a quantum phase transition from a quantum-anomalous-Hall (QAH) insulator to an Anderson insulator in a magnetic topological insulator by tuning the chemical potential. Our experiment demonstrates the existence of scaling behavior from which we extract the critical exponent for this quantum phase transition. We expect that our work will motivate much further investigation of many properties of quantum phase transition in this new context.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Evidence of Ising pairing in superconducting NbSe$_2$ atomic layers

Two-dimensional transition metal dichalcogenides with strong spin-orbit interactions and valley-dependent Berry curvature effects have attracted tremendous recent interests. Although novel single-particle and excitonic phenomena related to spin-valley coupling have been extensively studied, effects of spin-momentum locking on collective quantum phenomena remain unexplored. Here we report an observation of superconducting monolayer NbSe$_2$ with an in-plane upper critical field over six times of the Pauli paramagnetic limit by magneto-transport measurements. The effect can be understood in terms of the competing Zeeman effect and large intrinsic spin-orbit interactions in non-centrosymmetric NbSe$_2$ monolayers, where the electronic spin is locked to the out-of-plane direction. Our results provide a strong evidence of unconventional Ising pairing protected by spin-momentum locking and open up a new avenue for studies of non-centrosymmetric superconductivity with unique spin and valley degrees of freedom in the exact two-dimensional limit.

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preprint2015arXiv

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon as the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism.Here we report the experimental observation of the QAH state in V-doped (Bi,Sb)2Te3 films with the zero-field longitudinal resistance down to 0.00013+-0.00007h/e2 (~3.35+-1.76 ohm), Hall conductance reaching 0.9998+-0.0006e2/h and the Hall angle becoming as high as 89.993+-0.004degree at T=25mK. Further advantage of this system comes from the fact that it is a hard ferromagnet with a large coercive field (Hc>1.0T) and a relative high Curie temperature. This realization of robust QAH state in hard FMTIs is a major step towards dissipationless electronic applications without external fields.

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preprint2015arXiv

Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state

The quantum anomalous Hall (QAH) effect is predicted to possess, at zero magnetic field, chiral edge channels that conduct spin polarized current without dissipation. While edge channels have been observed in previous experimental studies of the QAH effect, their dissipationless nature at a zero magnetic field has not been convincingly demonstrated. By a comprehensive experimental study of the gate and temperature dependences of local and nonlocal magnetoresistance, we unambiguously establish the dissipationless edge transport. By studying the onset of dissipation, we also identify the origin of dissipative channels and clarify the surprising observation that the critical temperature of the QAH effect is two orders of magnitude smaller than the Curie temperature of ferromagnetism.

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preprint2014arXiv

Experimental Verification of Van Vleck Nature of Long-Range Ferromagnetic Order in Vanadium-Doped Three-Dimensional Topological Insulator Sb$_{2}$Te$_{3}$

We demonstrate by high resolution low temperature electron energy loss spectroscopy (EELS) measurements that the long range ferromagnetic (FM) order in vanadium (V)-doped topological insulator Sb$_2$Te$_3$ has the nature of van Vleck-type ferromagnetism. The positions and the relative amplitudes of two core-level peaks (L$_3$ and L$_2$) of the V EELS spectrum show unambiguous change when the sample is cooled from room temperature to T=10K. Magnetotransport and comparison of the measured and simulated EELS spectra confirm that these changes originate from onset of FM order. Crystal field analysis indicates that in V-doped Sb$_2$Te$_3$, partially filled core states contribute to the FM order. Since van Vleck magnetism is a result of summing over all states, this magnetization of core level verifies the van Vleck-type ferromagnetism in a direct manner.

0 citations0 reviewsNo code linkedOpen access