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Wang-Kong Tse

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Published work

20 published item(s)

preprint2022arXiv

Impurity States and Indirect Exchange Interaction in Irradiated Graphene

We theoretically investigate the impurity levels and exchange interaction between magnetic impurities in graphene driven by an off-resonant circularly polarized light field. Our analysis captures the non-perturbative effects resulting from scattering with magnetic impurities with a strong onsite potential. Under irradiation, a dynamical band gap opens up at the Dirac point, allowing impurity levels to exist inside the gap. These impurity levels are shown to give rise to a resonance feature in the exchange energy for impurities located either at the same or different sublattices. The exchange interaction also shows a wider spatial range of antiferromagnetic behavior due to irradiation. Our work demonstrates that the exchange energy of magnetic impurities in graphene is extensively tunable by light irradiation in the presence of strong potential scattering.

preprint2020arXiv

Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy

When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here, via combining magneto-infrared spectroscopy with theoretical analysis, we show that e-h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared to the case without e-h asymmetry, the SSs now bear not only a band asymmetry as that in the bulk but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap up to 70%. Our results signify the importance of e-h asymmetry in band engineering of TIs in the thin film limit.

preprint2020arXiv

Non-Equilibrium RKKY Interaction in Irradiated Graphene

We demonstrate that the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in graphene can be strongly modified by a time-periodic driving field even in the weak drive regime. This effect is due to the opening of a dynamical band gap at the Dirac points when graphene is exposed to circularly polarized light. Using Keldysh-Floquet Green's functions, we develop a theoretical framework to calculate the time-averaged RKKY coupling under weak periodic drives and show that its magnitude in undoped graphene can be decreased controllably by increasing the driving strength, while mostly maintaining its ferromagnetic or antiferromagnetic character. In doped graphene, we find RKKY oscillations with a period that is tunable by the driving field. When a sufficiently strong drive is turned on that brings the Fermi level completely within the dynamically opened gap, the behavior of the RKKY coupling changes qualitatively from that of doped to undoped irradiated graphene.

preprint2016arXiv

Coherent Magneto-Optical Effects in Topological Insulators: Excitation Near the Absorption Edge

We study coherent optics in topological insulator surface states with broken time-reversal symmetry and develop a theory for the dynamical Hall effect driven by intense electromagnetic field. The influence of optical Stark effect enters as nonlinear dependence on the optical field in the resulting Faraday $θ_F$ and Kerr $θ_K$ rotations. This nonlinear correction is found to decrease $θ_F$ with the strength of the A.C. electric field, whereas $θ_K$ exhibits a non-monotonic behavior. We also assess the effects of relaxation and dephasing on the Hall and magneto-optical responses when the frequency detuning is comparable to the inverse lifetime of the conduction electrons.

preprint2016arXiv

High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu$_{0.02}$Bi$_2$Se$_3$

We have utilized time-domain magneto-terahertz spectroscopy to investigate the low frequency optical response of topological insulator Cu$_{0.02}$Bi$_2$Se$_3$ and Bi$_2$Se$_3$ films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu$_{0.02}$Bi$_2$Se$_3$ induces a true bulk insulator with only a \textit{single} type of conduction with total sheet carrier density $\sim4.9\times10^{12}/$cm$^{2}$ and mobility as high as 4000 cm$^{2}/$V$\cdot$s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on top and bottom of the film with a chemical potential $\sim$145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero field Drude conductance. In contrast, in normal Bi$_2$Se$_3$ films two conduction channels were observed and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk/2DEG states. Our high-resolution Faraday rotation spectroscopy on Cu$_{0.02}$Bi$_2$Se$_3$ paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push chemical potential in the lowest Landau Level.

preprint2015arXiv

Radiative heat transfer in 2D Dirac materials

We compute the radiative heat transfer between two sheets of 2D Dirac materials, including topological Chern insulators and graphene, within the framework of the local approximation for the optical response of these materials. In this approximation, which neglects spatial dispersion, we derive both numerically and analytically the short-distance asymptotic of the near-field heat transfer in these systems, and show that it scales as the inverse of the distance between the two sheets. Finally, we discuss the limitations to the validity of this scaling law imposed by spatial dispersion in 2D Dirac materials.

preprint2014arXiv

Spin and Valley Noise in Two-Dimensional Dirac Materials

We develop a theory for optical Faraday rotation noise in two-dimensional Dirac materials. In contrast to spin noise in conventional semiconductors, we find that the Faraday rotation fluctuations are influenced not only by spins but also the valley degrees of freedom attributed to intervalley scattering processes. We illustrate our theory with two-dimensional transition metal dichalcogenides and discuss signatures of spin and valley noise in the Faraday noise power spectrum. We propose optical Faraday noise spectroscopy as a technique for probing both spin and valley relaxation dynamics in two-dimensional Dirac materials.

preprint2012arXiv

Photonic Analogue of Two-dimensional Topological Insulators and Helical One-Way Edge Transport in Bi-Anisotropic Metamaterials

Recent progress in understanding the topological properties of condensed matter has led to the discovery of time-reversal invariant topological insulators. Because of limitations imposed by nature, topologically non-trivial electronic order seems to be uncommon except in small-band-gap semiconductors with strong spin-orbit interactions. In this Article we show that artificial electromagnetic structures, known as metamaterials, provide an attractive platform for designing photonic analogues of topological insulators. We demonstrate that a judicious choice of the metamaterial parameters can create photonic phases that support a pair of helical edge states, and that these edge states enable one-way photonic transport that is robust against disorder.

preprint2012arXiv

Quantized Casimir Force

We investigate the Casimir effect between two-dimensional electron systems driven to the quantum Hall regime by a strong perpendicular magnetic field. In the large separation (d) limit where retardation effects are essential we find i) that the Casimir force is quantized in units of 3\hbar c α^2/(8π^2 d^4), and ii) that the force is repulsive for mirrors with same type of carrier, and attractive for mirrors with opposite types of carrier. The sign of the Casimir force is therefore electrically tunable in ambipolar materials like graphene. The Casimir force is suppressed when one mirror is a charge-neutral graphene system in a filling factor ν=0 quantum Hall state.

preprint2012arXiv

Topological phases in gated bilayer graphene: Effects of Rashba spin-orbit coupling and exchange field

We present a systematic study on the influence of Rashba spin-orbit coupling, interlayer potential difference and exchange field on the topological properties of bilayer graphene. In the presence of only Rashba spin-orbit coupling and interlayer potential difference, the band gap opening due to broken out-of-plane inversion symmetry offers new possibilities of realizing tunable topological phase transitions by varying an external gate voltage. We find a two-dimensional $Z_2$ topological insulator phase and a quantum valley Hall phase in $AB$-stacked bilayer graphene and obtain their effective low-energy Hamiltonians near the Dirac points. For $AA$ stacking, we do not find any topological insulator phase in the presence of large Rashba spin-orbit coupling. When the exchange field is also turned on, the bilayer system exhibits a rich variety of topological phases including a quantum anomalous Hall phase, and we obtain the phase diagram as a function of the Rashba spin-orbit coupling, interlayer potential difference, and exchange field.

preprint2011arXiv

Drude weight, plasmon dispersion, and a.c. conductivity in doped graphene sheets

We demonstrate that the plasmon frequency and Drude weight of the electron liquid in a doped graphene sheet are strongly renormalized by electron-electron interactions even in the long-wavelength limit. This effect is not captured by the Random Phase Approximation (RPA), commonly used to describe electron fluids and is due to coupling between the center of mass motion and the pseudospin degree of freedom of the graphene's massless Dirac fermions. Making use of diagrammatic perturbation theory to first order in the electron-electron interaction, we show that this coupling enhances both the plasmon frequency and the Drude weight relative to the RPA value. We also show that interactions are responsible for a significant enhancement of the optical conductivity at frequencies just above the absorption threshold. Our predictions can be checked by far-infrared spectroscopy or inelastic light scattering.

preprint2011arXiv

Magneto-Optical Faraday and Kerr Effects in Topological Insulator Films and in Other Layered Quantized Hall Systems

We present a theory of the magneto-optical Faraday and Kerr effects of topological insulator (TI) films. For film thicknesses short compared to wavelength, we find that the low-frequency Faraday effect in ideal systems is quantized at integer multiples of the fine structure constant, and that the Kerr effect exhibits a giant $π/2$ rotation for either normal or oblique incidence. For thick films that contain an integer number of half wavelengths, we find that the Faraday and Kerr effects are both quantized at integer multiples of the fine structure constant. For TI films with bulk parallel conduction, we obtain a criterion for the observability of surface-dominated magneto-optical effects. For thin samples supported by a substrate, we find that the universal Faraday and Kerr effects are present when the substrate is thin compared to the optical wavelength or when the frequency matches a thick-substrate cavity resonance. Our theory applies equally well to any system with two conducting layers that exhibit quantum Hall effects.

preprint2011arXiv

Quantum Anomalous Hall Effect in Single-layer and Bilayer Graphene

The quantum anomalous Hall effect can occur in single and few layer graphene systems that have both exchange fields and spin-orbit coupling. In this paper, we present a study of the quantum anomalous Hall effect in single-layer and gated bilayer graphene systems with Rashba spin-orbit coupling. We compute Berry curvatures at each valley point and find that for single-layer graphene the Hall conductivity is quantized at $σ_{xy} = 2e^2/h$, with each valley contributing a unit conductance and a corresponding chiral edge state. In bilayer graphene, we find that the quantized anomalous Hall conductivity is twice that of the single-layer case when the gate voltage $U$ is smaller than the exchange field $M$, and zero otherwise. Although the Chern number vanishes when $U > M$, the system still exhibits a quantized valley Hall effect, with the edge states in opposite valleys propagating in opposite directions. The possibility of tuning between different topological states with an external gate voltage suggests possible graphene-based spintronics applications.

preprint2011arXiv

Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene

We show that gated bilayer graphene hosts a strong topological insulator (TI) phase in the presence of Rashba spin-orbit (SO) coupling. We find that gated bilayer graphene under preserved time-reversal symmetry is a quantum valley Hall insulator for small Rashba SO coupling $λ_{\mathrm{R}}$, and transitions to a strong TI when $λ_{\mathrm{R}} > \sqrt{U^2+t_\bot^2}$, where $U$ and $t_\bot$ are respectively the interlayer potential and tunneling energy. Different from a conventional quantum spin Hall state, the edge modes of our strong TI phase exhibit both spin and valley filtering, and thus share the properties of both quantum spin Hall and quantum valley Hall insulators. The strong TI phase remains robust in the presence of weak graphene intrinsic SO coupling.

preprint2010arXiv

Giant Magneto-optical Kerr Effect and Universal Faraday Effect in Thin-film Topological Insulators

Topological insulators can exhibit strong magnetoelectric effects when their time-reversal symmetry is broken. In this Letter we consider the magneto-optical Kerr and Faraday effects of a topological insulator thin film weakly exchange-coupled to a ferromagnet. We find that its Faraday rotation has a universal value at low-frequencies, $θ_{\mathrm{F}} = \mathrm{tan}^{-1}\,α$ where $α$ is the vacuum fine structure constant, and that it has a giant Kerr rotation $θ_{\mathrm{K}} = π/2$. These properties follow from a delicate interplay between thin-film cavity confinement and the surface Hall conductivity of a topological insulator's helical quasiparticles.

preprint2010arXiv

Magneto-optical and Magneto-electric Effects of Topological Insulators in Quantizing Magnetic Fields

We develop a theory of the magneto-optical and magneto-electric properties of a topological insulator thin film in the presence of a quantizing external magnetic field. We find that low-frequency magneto-optical properties depend only on the sum of top and bottom surface Dirac-cone filling factors $ν_{\mathrm{T}}$ and $ν_{\mathrm{B}}$, whereas the low-frequency magneto-electric response depends only on the difference. The Faraday rotation is quantized in integer multiples of the fine structure constant and the Kerr effect exhibits a $π/2$ rotation. Strongly enhanced cyclotron-resonance features appear at higher frequencies that are sensitive to the filling factors of both surfaces. When the product of the bulk conductivity and the film thickness in $e^2/h$ units is small compared to $α$, magneto-optical properties are only weakly dependent on accidental doping in the interior of the film.

preprint2010arXiv

Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects

We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature distribution and find a non-zero Chern number for the valence bands and demonstrate the existence of gapless edge states. Inspired by this finding, we also study, by first principles method, a concrete example of graphene with Fe atoms adsorbed on top, obtaining the same result.

preprint2008arXiv

Energy Relaxation of Hot Dirac Fermions in Graphene

We develop a theory for the energy relaxation of hot Dirac fermions in graphene. We obtain a generic expression for the energy relaxation rate due to electron-phonon interaction and calculate the power loss due to both optical and acoustic phonon emission as a function of electron temperature $T_{\mathrm{e}}$ and density $n$. We find an intrinsic power loss weakly dependent on carrier density and non-vanishing at the Dirac point $n = 0$, originating from interband electron-optical phonon scattering by the intrinsic electrons in the graphene valence band. We obtain the total power loss per carrier $\sim 10^{-12} - 10^{-7} \mathrm{W}$ within the range of electron temperatures $\sim 20 - 1000 \mathrm{K}$. We find optical (acoustic) phonon emission to dominate the energy loss for $T_{\mathrm{e}} > (<) 200-300 \mathrm{K}$ in the density range $n = 10^{11}-10^{13} \mathrm{cm}^{-2}$.

preprint2007arXiv

Is Graphene a Fermi Liquid?

We answer the question posed in the title above by considering theoretically the electron-electron interaction induced many-body effects in undoped (`intrinsic') and doped (`extrinsic') 2D graphene layers. We find that (1) intrinsic graphene is a marginal Fermi liquid with the imaginary part of the self-energy, ${Im}Σ(ω)$, going as linear in energy $ω$ for small $ω$, implying that the quasiparticle spectral weight vanishes at the Dirac point as $({ln}ω)^{-1}$; and, (2) extrinsic graphene is a well-defined Fermi liquid with ${Im}Σ(ω)\sim ω^2\mathrm{ln}ω$ near the Fermi surface similar to 2D carrier systems with parabolic energy dispersion. We provide analytical and numerical results for quasiparticle renormalization in graphene, concluding that all experimental graphene systems are ordinary 2D Fermi liquids since any doping automatically induces generic Fermi liquid behavior.

preprint2005arXiv

Spin Hall Effect in Doped Semiconductor Structures

In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as $σ_{xy}^{SJ}/σ_{xy}^{SS} \sim (\hbar/τ)/ε_F$, with $τ$ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining $σ_s/σ_c \sim 10^{-3}-10^{-4}$ where $σ_{s(c)}$ is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato \textit{et al}. [Science \textbf{306}, 1910 (2004)] in n-doped 3D GaAs system.