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Researcher profile

Walter R. L. Lambrecht

Walter R. L. Lambrecht contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.othercond-mat.stat-mechphysics.app-phphysics.comp-ph

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Published work

13 published item(s)

preprint2022arXiv

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V$_2$O$_5$

The simplest picture of excitons in materials with atomic-like localization of electrons is that of Frenkel excitons, where electrons and holes stay close together, which is associated with a large binding energy. Here, using the example of the layered oxide V$_2$O$_5$ , we show how localized charge-transfer excitations combine to form excitons that also have a huge binding energy but, at the same time, a large electron-hole distance, and we explain this seemingly contradictory finding. The anisotropy of the exciton delocalization is determined by the local anisotropy of the structure, whereas the exciton extends orthogonally to the chains formed by the crystal structure. Moreover, we show that the bright exciton goes together with a dark exciton of even larger binding energy and more pronounced anisotropy. These findings are obtained by combining first principles many-body perturbation theory calculations, ellipsometry experiments, and tight binding modelling, leading to very good agreement and a consistent picture. Our explanation is general and can be extended to other materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Real space representation of the quasiparticle self-consistent $GW$ self-energy and its application to defect calculations

The quasiparticle self-consistent QS$GW$ approach incorporates the corrections of the quasiparticle energies from their Kohn-Sham density functional theory (DFT) eigenvalues by means of an energy independent and Hermitian self-energy matrix usually given in the basis set of the DFT eigenstates. By expanding these into an atom-centered basis set (specifically here the linearized muffin-tin orbitals) a real space representation of the self-energy corrections becomes possible. We show that this representation is relatively short-ranged. This offers new opportunities to construct the self-energy of a complex system from parts of the system by a cut-and-paste method. Specifically for a point defect, represented in a large supercell, the self-eneregy can be constructed from those of the host and a smaller defect containing cell. The self-energy of the periodic host can be constructed simply from a $GW$ calculation for the primitive cell. We show for the case of the As$_\mathrm{Ga}$ in GaAs that the defect part can already be well represented by a minimal 8 atom cell and allows us to construct the self-energy for a 64 cell in good agreement with direct QS$GW$ calculations for the large cell. Using this approach to an even larger 216 atom cell shows the defect band approaches an isolated defect level. The calculations also allow to identify a second defect band which appears as a resonance near the conduction band minimum. The results on the extracted defect levels agree well with Green's function calculations for an isolated defect and with experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Experimental determination of the valence band offsets of $ZnGeN_2$ and $ZnGe_{0.94}Ga_{0.12}N_2$ with $GaN$

A predicted type-II staggered band alignment with an approximately $1.4 eV$ valence band offset at the $ZnGeN_2/GaN$ heterointerface has inspired novel band-engineered $III-N/ZnGeN_2$ heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown $(ZnGe)_{1-x}Ga_{2x}N_2$, for $x = 0$ and $0.06$, and $GaN$ using X-ray photoemission spectroscopy. The valence band of $ZnGeN_2$ was found to lie $1.45-1.65 eV$ above that of $GaN$. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For $(ZnGe)_{0.94}Ga_{0.12}N_2$ the value was determined to be $1.29 eV$, $~10-20\%$ lower than that of $ZnGeN_2$. The experimental determination of the large band offset between $ZnGeN_2$ and $GaN$ provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Buckled honeycomb group-$V$--$S_6$ symmetric $(d-2)$ higher order topological insulators

Higher Order Topological Insulators (HOTI) are $d$-spatial dimensional systems featuring topologically protected gap-less states at their $(d-n)$-dimensional boundaries. With the help of \textit{ab-initio} calculations and tight binding models along with symmetry considerations we show that monolayer buckled honeycomb structures of group-V elements (Sb,As), which have already been synthesized, belong in this category and have a charge fractionalization of $\frac{e}{2}$ at the corner states as well as weak topological edge states, all protected by their properties under the inversion operation which classify this system as a quadrupole topological insulator.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron microscopy and spectroscopic study of structural changes, electronic properties and conductivity in annealed Li$_x$CoO$_2$

Chemically exfoliated nanoscale few-layer thin Li$_x$CoO$_2$ samples are studied as function of annealing at various temperatures, using transmission electron microscopy (TEM) and Electron Energy Loss Spectroscopies (EELS), probing the O-K, Co-L$_{2,3}$ spectra along with low energy interband transitions. These spectra are compared with first-principles DFT calculations of -Im$[\varepsilon^{-1}(q,ω)]$ and O-2p Partial Densities of States weighted by dipole matrix elements with the core wavefunction and including the O-1s core-hole and with known trends of the L$_2$/L$_3$ peak ratio to average Co valence. Trends in these spectra under the annealing procedures are established and correlated with the structural phase changes observed from diffraction TEM and High Resolution TEM images. The results are also correlated with conductivity measurements on samples subjected to the same annealing procedures. A gradual disordering of the Li and Co cations in the lattice is observed starting from a slight distortion of the pure LiCoO$_2$ $R\bar{3}m$ to $C2/m$ due to the lower Li content, followed by a $P2/m$ phase forming at 200$^o$C indicative of Li-vacancy ordering, formation of a spinel type $Fd\bar{3}m$ phase around 250$^o$C and ultimately a rocksalt type $Fm\bar{3}m$ phase above 350$^o$C. This disordering leads to a lowering of the band gap as established by low energy EELS. The O-K spectra of the rocksalt phase are only reproduced by a calculation for pure CoO and not for a model with random distribution of Li and Co. This indicates that there may be a loss of Li from the rocksalt regions of the sample at these higher temperatures. The conductivity measurements indicate a gradual drop in conductivity above 200$^o$C, which is clearly related to the more Li-Co interdiffused phases, in which a low-spin electronic structure is no longer valid and stronger correlation effects are expected.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quasiparticle self-consistent $GW$ band structures and high-pressure phase transitions of LiGaO$_2$ and NaGaO$_2

Quasi-particle self-consistent $GW$ calculations are presented for the band structures of LiGaO2 and NaGaO2 in the orthorhombic $Pna2_1$ tetrahedrally coordinated crystal structures. Symmetry labeling of the bands near the gap is carried out and effective mass tensors are extracted for the conduction band minimum and crystal field split valence band maxima at $Γ$. The gap is found to be direct at $Γ$ and is 5.81 eV in LiGaO2 and 5.46 eV in NaGaO2. Electron-phonon coupling zero-point normalization is estimated to lower these gaps by about 0.2 eV. Optical response functions are calculated within the independent particle long wavelength limit and show the expected anisotropy of the absorption onsets due to the crystal field splitting of the VBM. The results show that both materials are promising candidates as ultrawide gap semiconductors with wurtzite based tetrahedrally bonded crystal structures. Direct transitions from the lowest conduction band to higher bands, relevant to n-type doped material and transparent conduction applications are found to start only above 3.9 eV and are allowed for only one polarization, and several higher band transitions are forbidden by symmetry. Alternative crystal structures, such as $R\bar{3}m$ and a rocksalt type phase with tetragonally distorted $P4/mmm$ spacegroup, both with octahedral coordination of the cations are also investigated. They are found to have higher energy but about 20 \% smaller volume per formula unit. The transition pressures to these phases are determined and for LiGaO2 found to be in good agreement with experimental studies. The $R\bar{3}m$phase also has a comparably high but slightly indirect band gap while the rocksalt type phase if found to have a considerably smaller gap of about 3.1 eV in LiGaO2 and 1.0 eV in NaGaO2.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-polarized two-dimensional electron/hole gases on LiCoO$_2$ layers

First-principles calculations show the formation of a 2D spin polarized electron (hole) gas on the Li (CoO$_2$) terminated surfaces of finite slabs down to a monolayer of LiCoO$_2$ in remarkable contrast with the bulk band structure stabilized by Li donating its electron to the CoO$_2$ layer forming a Co-$d-t_{2g}^6$ insulator. By mapping the first-principles computational results to a minimal tight-binding models corresponding to a non-chiral 3D generalization of the quadripartite Su-Schriefer-Heeger (SSH4) model, we show that these surface states have topological origin.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Topological obstructed atomic limit by annihilating Dirac fermions

We show that annihilating a pair of Dirac fermions implies a topological transition from the critical semi-metallic phase to an Obstructed Atomic Limit (OAL) insulator phase instead of a trivial insulator. This is shown to happen because of branch-cuts in the phase of the wave functions, leading to non trivial Zak phase along certain directions. To this end, we study their Z$_2$ invariant and also study the phase transition using Entanglement Entropy. We use low energy Hamiltonians and numerical result from model systems to show this effect. These transitions are observed in realistic materials including strained graphene and buckled honeycomb group-V (Sb/As).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Topological quantum switch and controllable quasi 1D wires in antimonene

Based on the recently found non-trivial topology of buckled antimonene, we propose the conceptual design of a quantized switch that is protected by topology and a mechanism to create configurable 1D wire channels. We show that the topologically required edge states in this system can be turned on and off by breaking the inversion symmetry (reducing the symmetry from $S_6$ to $C_3$), which can be achieved by gating the system. This is shown to create a field-effect quantum switch projected by topology. Secondly we show that by locally gating the system with different polarity in different areas, a soliton-like domain wall is created at their interface, which hosts a protected electronic state, in which transport could be accessed by gated doping.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

First-principles study of point defects in LiGaO2

The native point defects are studied in LiGaO2 using hybrid functional calculations. We find that the relative energy of formation of the cation vacancies and the cation antisite defects depends strongly on the chemical potential conditions. The lowest energy defect is found to be the Ga_Li^2+ donor. It is compensated mostly by V_Li^-1and in part by Li_Ga^-2 in the more Li-rich conditions. The equilibrium carrier concentrations are found to be negligible because the Fermi level is pinned deep in the gap and this is consistent with insulating behavior in pure LiGaO2. The V_Ga has high energy under all reasonable conditions. Both the Ga_Li and the V_O are found to be negative U centers with deep 2+/0 transition levels.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Questaal: a package of electronic structure methods based on the linear muffin-tin orbital technique

This paper summarises the theory and functionality behind Questaal, an open-source suite of codes for calculating the electronic structure and related properties of materials from first principles. The formalism of the linearised muffin-tin orbital (LMTO) method is revisited in detail and developed further by the introduction of short-ranged tight-binding basis functions for full-potential calculations. The LMTO method is presented in both Green's function and wave function formulations for bulk and layered systems. The suite's full-potential LMTO code uses a sophisticated basis and augmentation method that allows an efficient and precise solution to the band problem at different levels of theory, most importantly density functional theory, LDA+U, quasi-particle self-consistent GW and combinations of these with dynamical mean field theory. This paper details the technical and theoretical bases of these methods, their implementation in Questaal, and provides an overview of the code's design and capabilities.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Topological band structure transitions in honeycomb antimonene as function of buckling

The electronic band topology of monolayer $β$-Sb (antimonene) is studied from the flat honeycomb to the equilibrium buckled structure using first-principles calculations and analyzed using a tight-binding model and low energy Hamiltonians. In flat monolayer Sb, the Fermi level occurs near the intersection of two warped Dirac cones, one associated with the $p_z$-orbitals, and one with the $\{p_x,p_y\}$-orbitals. The differently oriented threefold warping of these two cones leads to an unusually shaped nodal line, which leads to anisotropic in-plane transport properties and goniopolarity. A slight buckling opens a gap along the nodal line except at six remaining Dirac points, protected by symmetry. Under increasing buckling, pairs of Dirac points of opposite winding number annihilate at a critical buckling angle. At a second critical angle, the remaining Dirac points disappear when the band structure becomes a trivial semiconductor. Spin-orbit coupling and edge states are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Understanding the crystallographic phase relations in alkali-trihalogeno-germanate perovskites in terms of ferroelectric or antiferroelectric arrangements of the tetrahedral GeX$_3$ units

The alkali-trihalogeno-germanates AGeX$_3$ with A a large single positive ion such as Rb, Cs, or organic radicals such as methyl ammonium (MA), and X a halogen (I, Br, Cl, F) along with the corresponding stannates (ASnX$_3$) and plumbates (APbX$_3$) exhibit a large variety of crystal structures, some of which are of the perovskite type. These materials, better known as "halide perovskites'' have recently gained worldwide attention as promising photovoltaic and more broadly opto-electronic materials. But their stability problems relative to the non-perovskite phases is a major issue. Here we show that the phase relations in these materials can be understood in terms of the relative orientation of the GeX$_3$ tetrahedral units, which is ferroelectric in the perovskite phase but antiferroelectric in the competing phases. This suggests that an applied electric field could be used to stabilize the desired phases and trigger a phase transition between two phases of the material with widely different optical and electronic properties.

0 citations0 reviewsNo code linkedOpen access