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Researcher profile

Adisak Boonchun

Adisak Boonchun contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

N$_2$, NO and O$_2$ molecules in LiGaO$_2$ in both Ga and Li sites and their relation to the vacancies

Doping of the ultrawide band gap semicodnctor LiGaO$_2$ ($E_g=5.6$ eV) with N$_2$, NO and O$_2$ molecules placed in either Ga or Li-vacancies is studied using first-principles calculations. These molecular dopants are considered as potential acceptors for $p$-type doping. Their optimal placement and orientation relative to the lattice is studied as well as their transition levels and energy of formation. Unfortunately, they are found to have deep acceptor level transition states. We discuss the relation of the transition levels to the one-electron levels, their spin state and defect wave functions. They are found to be closely related to those of the corresponding vacancies.

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preprint2019arXiv

Computational Study of Electron Paramagnetic Resonance Spectra for Li and Ga Vacancies in LiGaO2

A computational study of the Electron Paramagnetic Resonance (EPR) $g$-tensors and hyperfine tensors of Li and Ga vacancies in LiGaO$_2$ is presented. Density Functinal Theory (DFT) calculations are carried out of the Ga and Li vacancies using the DFT+U approach in the charge states which carry an unpaired spin. In both vacancies the hole is located on one oxygen $p$-orbital adjacent to the vacancy. Apical and different basal plane O are considered. The magnetic resonance parameters of the defects are determined using the Gauge Including Projector Augmented Wave (GIPAW) method. The EPR spectra of $V_\mathrm{Ga}^{2-}$ is characterized by a quasi-isotropic superhyperfine (SHF) interaction with one Ga nucleus and for the apical O spin gives a $g$-tensor with maximum oriented along the bond direction from that O to its other Ga neighbor. For $V_\mathrm{Li}^0$ there is a quasi-isotropic SHF interaction with two Ga nuclei and the $g$-tensor maximum is along ${\bf c}$ for the basal plane O spin. Both of these are in agreement with experiment but we predict also the $g$-tensors for the other possible localization of the spins as well as the small hyperfine splittings (as yet not observed) on Li. The energies of formation and transition levels of the corresponding defects provide insight into the conditions required to activate these EPR spectra.

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preprint2019arXiv

First-principles study of point defects in LiGaO2

The native point defects are studied in LiGaO2 using hybrid functional calculations. We find that the relative energy of formation of the cation vacancies and the cation antisite defects depends strongly on the chemical potential conditions. The lowest energy defect is found to be the Ga_Li^2+ donor. It is compensated mostly by V_Li^-1and in part by Li_Ga^-2 in the more Li-rich conditions. The equilibrium carrier concentrations are found to be negligible because the Fermi level is pinned deep in the gap and this is consistent with insulating behavior in pure LiGaO2. The V_Ga has high energy under all reasonable conditions. Both the Ga_Li and the V_O are found to be negative U centers with deep 2+/0 transition levels.

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