Researcher profile

W. K. Zhu

W. K. Zhu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8

In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 * 10^7 Jones) and comparably short response time (τ_rise = 433 ms, τ_decay = 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm^-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta2Ni3Se8 makes it even more important in future electronic and optoelectronic applications.

preprint2022arXiv

Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires

Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here we report on the fabrication and testing of photodetectors based on exfoliated quasi-1D BiSeI thin wires. Compared with the device on bulk crystal, a significantly enhanced photoresponse is observed, which is manifested by a series of performance parameters, including ultrahigh responsivity (7 x 10$^4$ A W$^{-1}$), specific detectivity (2.5 x 10$^{14}$ Jones) and external quantum efficiency (1.8 x 10$^7$%) when $V_{\textrm {ds}}$ = 3 V, $λ$ = 515 nm and $P$ = 0.01 mW cm$^{-2}$. The conventional photoconductive effect is unlikely to account for such a superior photoresponse, which is ultimately understood in terms of the increased specific surface area and the photogating effect caused by trapping states. This work provides a perspective for the modulation of optoelectronic properties and performance in quasi-1D materials.