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C. Reichl

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Published work

34 published item(s)

preprint2021arXiv

Capacitance and conductance oscillations from electron tunneling into high energy levels of a quantum well in a p-i-n diode

Two-dimensional electron and hole gases separated by a few nm from each other are produced in p-i-n diodes based upon MBE-grown GaAs/AlGaAs heterostructures. At such interlayer distances, the exciton formation and possibly Bose-Einstein condensation (BEC) is expected. We measure the capacitance between the layers and find it to oscillate as a function of the bias voltage. The peak values exceed the geometric capacitance by up to a factor of two. The surprisingly regular periods of the oscillations are of the order of 10 to 30 mV and scale linearly with the inverse of the thickness, between 60 and 150 nm, of the GaAs layer placed between the barrier and the p-doped AlGaAs. The oscillations are related to the resonant electron tunneling into high energy levels of this GaAs layer acting as a quantum well. We suggest that long lifetimes of the electrons in these levels are the origin of the large peak values of the capacitance. The possible relation of the capacitance oscillations with BEC is discussed.

preprint2021arXiv

Spin-Selective Equilibration among Integer Quantum Hall Edge Channels

The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with lower electron temperatures call for a further exploration of the topic. We develop a framework to systematically measure and analyze the equilibration of many (up to 8) integer edge modes. Our results show that spin-selective coupling dominates even for non-neighboring channels with parallel spin. Changes in magnetic field and bulk density let us control the equilibration until it is almost completely suppressed and dominated only by individual microscopic scatterers. This method could serve as a guideline to investigate and design improved devices, and to study fractional and other exotic states.

preprint2020arXiv

A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells

The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the traditional design like the poor 2DEG mobility and leakage currents between the gate and the quantum well. Both bilayers with and without separate contacts have been prepared and tested. Tuning the electron density in one layer while keeping the second 2DEG at fixed density, one observes a dramatic increase of the carrier concentration. This tunneling resonance, which occurs at equal densities of both layers, demonstrates the separated contacts to each individual layer. In another sample with a smaller tunneling barrier and parallel contacted 2DEGs, the transition from a single 2DEG to a bilayer system is investigated at 50 mK in magnetic fields up to 12 T, showing the gate stability in high magnetic fields and very low temperatures. Transitions into an insulating (Wigner crystal) phase are observed in the individual layers in high fields at filling factors below 1/3. The absence of a fractional quantum Hall liquid at filling factor 1/5 in our structure seems to be a consequence of confining the electrons in quantum wells rather than at interfaces. The observed metal-insulator transitions appear to be nearly unaffected by the presence of the second layer separated by a barrier which is only 3 nm thick. We believe that this planar back-gate design holds great promise to produce controllable bilayers suitable to investigate the exotic (non-abelian) properties of correlated states.

preprint2020arXiv

Efficient orthogonal control of tunnel couplings in a quantum dot array

Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all inter-dot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.

preprint2020arXiv

Electron cascade for spin readout

Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge transition to induce subsequent charge transitions, inducing a cascade of electron hops, like toppling dominoes. A cascade can transmit information along a quantum dot array over a distance that extends by far the effect of the direct Coulomb repulsion. We demonstrate that a cascade of electrons can be combined with Pauli spin blockade to read out spins using a remote charge sensor. We achieve > 99.9% spin readout fidelity in 1.7 $\mathrmμ$s. The cascade-based readout enables operation of a densely-packed two-dimensional quantum dot array with charge sensors placed at the periphery. The high connectivity of such arrays greatly improves the capabilities of quantum dot systems for quantum computation and simulation.

preprint2016arXiv

Coherent spin-exchange via a quantum mediator

Coherent interactions at a distance provide a powerful tool for quantum simulation and computation. The most common approach to realize an effective long-distance coupling 'on-chip' is to use a quantum mediator, as has been demonstrated for superconducting qubits and trapped ions. For quantum dot arrays, which combine a high degree of tunability with extremely long coherence times, the experimental demonstration of coherent spin-spin coupling via an intermediary system remains an important outstanding goal. Here, we use a linear triple-quantum-dot array to demonstrate a first working example of a coherent interaction between two distant spins via a quantum mediator. The two outer dots are occupied with a single electron spin each and the spins experience a superexchange interaction through the empty middle dot which acts as mediator. Using single-shot spin read-out we measure the coherent time evolution of the spin states on the outer dots and observe a characteristic dependence of the exchange frequency as a function of the detuning between the middle and outer dots. This approach may provide a new route for scaling up spin qubit circuits using quantum dots and aid in the simulation of materials and molecules with non-nearest neighbour couplings such as MnO, high-temperature superconductors and DNA. The same superexchange concept can also be applied in cold atom experiments.

preprint2016arXiv

Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate $T$ that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

preprint2016arXiv

Current-controlled Spin Precession of Quasi-Stationary Electrons in a Cubic Spin-Orbit Field

Space- and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backward diffusion, we find a precession frequency in absence of an external magnetic field. The frequency depends linearly on the drift velocity and is explained by the cubic Dresselhaus spin-orbit interaction, for which drift leads to a spin precession angle twice that of spins that diffuse the same distance.

preprint2016arXiv

Electron backscattering in a cavity: ballistic and coherent effects

Numerous experimental and theoretical studies have focused on low-dimensional systems locally perturbed by the biased tip of a scanning force microscope. In all cases either open or closed weakly gate-tunable nanostructures have been investigated, such as quantum point contacts, open or closed quantum dots, etc. We study the behaviour of the conductance of a quantum point contact with a gradually forming adjacent cavity in series under the influence of a scanning gate. Here, an initially open quantum point contact system gradually turns into a closed cavity system. We observe branches and interference fringes known from quantum point contacts coexisting with irregular conductance fluctuations. Unlike the branches, the fluctuations cover the entire area of the cavity. In contrast to previous studies, we observe and investigate branches under the influence of the confining stadium potential, which is gradually built up. We find that the branches exist only in the area surrounded by cavity top gates. As the stadium shrinks, regular fringes originate from tip-induced constrictions leading to quantized conduction. In addition, we observe arc-like areas reminiscent of classical electron trajectories in a chaotic cavity. We also argue that electrons emanating from the quantum point contact spread out like a fan leaving branch-like regions of enhanced backscattering.

preprint2016arXiv

Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well

We report a magnetotransport study of an ultra-high mobility ($\barμ\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed in a wide temperature range between 0.3 K and 60 K. The simplicity of our material system with a single sub-band occupation and free electron dispersion rules out most complicated mechanisms that could give rise to the observed LMR. At low temperature, quantum oscillations are superimposed onto the LMR. Both, the featureless LMR at high $T$ and the quantum oscillations at low $T$ follow the empirical resistance rule which states that the longitudinal conductance is directly related to the derivative of the transversal (Hall) conductance multiplied by the magnetic field and a constant factor $α$ that remains unchanged over the entire temperature range. Only at low temperatures, small deviations from this resistance rule are observed beyond $ν=1$ that likely originate from a different transport mechanism for the composite fermions.

preprint2016arXiv

Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device

The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called `hot spot', we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in e.g. silicon based quantum dots. This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.

preprint2016arXiv

Nuclear magnetic resonance and nuclear spin relaxation in AlAs quantum well probed by ESR

The study of nuclear magnetic resonance and nuclear spin-lattice relaxation was conducted in an asymmetrically doped to $n\sim1.8\times10^{11}$ cm$^{-2}$ 16 nm AlAs quantum well grown in the $[001]$-direction. Dynamic polarization of nuclear spins due to the hyperfine interaction resulted in the so-called Overhauser shift of the two-dimensional conduction electron spin resonance. The maximum shifts achieved in the experiments are several orders of magnitude smaller than in GaAs-based heterostructures indicating that hyperfine interaction is weak. The nuclear spin-lattice relaxation time extracted from the decay of Overhauser shift over time turned out to depend on the filling factor of the two-dimensional electron system. This observation indicates that nuclear spin-lattice relaxation is mostly due to the interaction between electron and nuclear spins. Overhauser shift diminishes resonantly when the RF-radiation of certain frequencies was applied to the sample. This effect served as an indirect, yet powerful method for nuclear magnetic resonance detection: NMR quadrupole splitting of $^{75}$As nuclei was clearly resolved. Theoretical calculations performed describe well these experimental findings.

preprint2016arXiv

Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases

The quest for extremely high mobilities of 2d electron gases in MBE-grown heterostructures is hampered by the available purity of the starting materials, particularly of the gallium. Here we compare the role of different Ga lots having nominally the highest possible quality on the mobility and the photoluminescence (PL) of modulation doped single interface structures and find significant differences. A weak exciton PL reveals that the purity of the Ga is insufficient. No high mobility can be reached with such a lot with a reasonable effort. On the other hand, a strong exciton PL indicates a high initial Ga purity, allowing to reach mobilities of 15 million (single interface) or 28 million $cm^2/Vsec$ (doped quantum wells) in our MBE systems. We discuss possible origins of the inconsistent Ga quality. Furthermore, we compare samples grown in different MBE systems over a period of several years and find that mobility and PL is correlated if similar structures and growth procedures are used.

preprint2016arXiv

Scanning gate imaging in confined geometries

This article reports on tunable electron backscattering investigated with the biased tip of a scanning force microscope. Using a channel defined by a pair of Schottky gates, the branched electron flow of ballistic electrons injected from a quantum point contact is guided by potentials of a tunable height well below the Fermi energy. The transition from injection into an open two-dimensional electron gas to a strongly confined channel exhibits three experimentally distinct regimes: one in which branches spread unrestrictedly, one in which branches are confined but the background conductance is affected very little, and one where the branches have disappeared and the conductance is strongly modified. Classical trajectory-based simulations explain these regimes at the microscopic level. These experiments allow us to understand under which conditions branches observed in scanning gate experiments do or do not reflect the flow of electrons.

preprint2016arXiv

Scanning-gate-induced effects and spatial mapping of a cavity

Tailored electrostatic potentials are the foundation of scanning gate microscopy. We present several aspects of the tip-induced potential on the two-dimensional electron gas. First, we give methods on how to estimate the size of the tip-induced potential. Then, a ballistic cavity is formed and studied as a function of the bias-voltage of the metallic top gates and probed with the tip-induced potential. It is shown how the potential of the cavity changes by tuning the system to a regime where conductance quantization in the constrictions formed by the tip and the top gates occurs. This conductance quantization leads to a unprecedented rich fringe pattern over the entire structure. Finally, the effect of electrostatic screening of the metallic top gates is discussed.

preprint2015arXiv

Magnetoplasma excitations of two-dimensional anisotropic heavy fermions in AlAs quantum wells

The spectra of plasma and magnetoplasma excitations in a two-dimensional system of anisotropic heavy fermions were investigated for the first time. The spectrum of microwave absorption by disk-like samples of stressed AlAs quantum wells at low electron densities showed two plasma resonances separated by a frequency gap. These two plasma resonances correspond to electron mass principle values of $(1.10 \pm 0.05) m_0$ and $(0.20 \pm 0.01) m_0$. The observed results correspond to the case of a single valley strongly anisotropic Fermi surface. It was established that electron density increase results in population of the second valley, manifesting itself as a drastic modification of the plasma spectrum. We directly determined the electron densities in each valley and the inter-valley splitting energy from the ratio of the two plasma frequencies.

preprint2015arXiv

Microwave Emission from Hybridized States in a Semiconductor Charge Qubit

We explore the microwave radiation emitted from a biased double quantum dot due to the inelastic tunneling of single charges. Radiation is detected over a broad range of detuning configurations between the dot energy levels with pronounced maxima occurring in resonance with a capacitively coupled transmission line resonator. The power emitted for forward and reverse resonant detuning is found to be in good agreement with a rate equation model, which considers the hybridization of the individual dot charge states.

preprint2015arXiv

Mode specific backscattering in a quantum point contact

We demonstrate a scanning gate grid measurement technique consisting in measuring the conductance of a quantum point contact (QPC) as a function of gate voltage at each tip position. Unlike conventional scanning gate experiments, it allows investigating QPC conductance plateaus affected by the tip at these positions. We compensate the capacitive coupling of the tip to the QPC and discover that interference fringes coexist with distorted QPC plateaus. We spatially resolve the mode structure for each plateau.

preprint2015arXiv

Nonequilibrium transport in density-modulated phases of the second Landau level

We investigate non-equilibrium transport in the reentrant integer quantum Hall phases of the second Landau level. At high currents, we observe a transition from the reentrant integer quantum Hall phases to classical Hall-conduction. Surprisingly, this transition is markedly different for the hole- and electron sides of each spin-branch. While the hole bubble phases exhibit a sharp transition to an isotropic compressible phase, the transition for the electron side occurs via an intermediate phase. This might indicate a more complex structure of the bubble phases than currently anticipated, or a breaking of the particle-hole symmetry. Such a symmetry breaking in the second Landau level might also have consequences for the physics at filling factor $ν$=5/2.

preprint2015arXiv

Spin orbit coupling at the level of a single electron

We utilize electron counting techniques to distinguish a spin conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99 % in terms of resolving whether a tunneling event occurred with a spin flip or not.

preprint2015arXiv

Transition of a 2D spin mode to a helical state by lateral confinement

Spin-orbit interaction (SOI) leads to spin precession about a momentum-dependent spin-orbit field. In a diffusive two-dimensional (2D) electron gas, the spin orientation at a given spatial position depends on which trajectory the electron travels to that position. In the transition to a 1D system with increasing lateral confinement, the spin orientation becomes more and more independent on the trajectory. It is predicted that a long-lived helical spin mode emerges. Here we visualize this transition experimentally in a GaAs quantum-well structure with isotropic SOI. Spatially resolved measurements show the formation of a helical mode already for non-quantized and non-ballistic channels. We find a spin-lifetime enhancement that is in excellent agreement with theoretical predictions. Lateral confinement of a 2D electron gas provides an easy-to-implement technique for achieving high spin lifetimes in the presence of strong SOI for a wide range of material systems.

preprint2014arXiv

Interplay of fractional quantum Hall states and localization in quantum point contacts

We investigate integer and fractional quantum Hall states in quantum point contacts (QPCs) of different geometries, defined in AlGaAs/GaAs heterostructures employing different doping and screening techniques. We find that, even in the highest mobility samples, interference and localization strongly influence the transport properties. We propose microscopic models for these effects, based on single- and many-electron physics. For integer quantum Hall states, transport is modulated due to the self-consistent formation of compressible regions of enhanced or reduced density in the incompressible region of the constriction. In the fractional quantum Hall regime, we observe the localization of fractionally charged quasi-particles in the constriction and an interplay of single- and many-electron physics. At low electron densities and in comparatively weak magnetic fields, single-electron interference dominates transport. Utilizing optimized growth and gating techniques, the $ν$=5/2 state can be observed in a QPC, conserving the bulk properties in an unprecedented quality. Our results might improve the understanding of the influence of localization on the transmission properties of QPCs, which is necessary for the interpretation of interference experiments employing QPCs, especially at $ν$=5/2.

preprint2014arXiv

Locally induced quantum interference in scanning gate experiments

We present conductance measurements of a ballistic circular stadium influenced by a scanning gate. When the tip depletes the electron gas below, we observe very pronounced and regular fringes covering the entire stadium. The fringes correspond to transmitted modes in constrictions formed between the tip-induced potential and the boundaries of the stadium. Moving the tip and counting the fringes gives us exquisite control over the transmission of these constrictions. We use this control to form a quantum ring with a specific number of modes in each arm showing the Aharonov-Bohm effect in low-field magnetoconductance measurements.

preprint2014arXiv

Magnetoresistance Induced by Rare Strong Scatterers in a High Mobility 2DEG

We observe a strong negative magnetoresistance at non-quantizing magnetic fields in a high-mobility two-dimensional electron gas (2DEG). This strong negative magnetoresistance consists of a narrow peak around zero magnetic field and a huge magnetoresistance at larger fields. The peak shows parabolic magnetic field dependence and is attributed to the interplay of smooth disorder and rare strong scatterers. We identify the rare strong scatterers as macroscopic defects in the material and determine their density from the peak curvature.

preprint2014arXiv

Spin relaxation anisotropy in a GaAs quantum dot

We report that the electron spin relaxation time, T1, in a GaAs quantum dot with a spin-1/2 ground state has a 180 degree periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots as due to the interplay of Rashba and Dresselhaus spin orbit contributions. Different from this prediction, we find that the extrema in the T1 do not occur when the magnetic field is along the [110] and [1-10] crystallographic directions. This deviation is attributed to an elliptical dot confining potential. The T1 varies by more than an order of magnitude when rotating a 3 Tesla field, reaching about 80 ms for the magic angle. We infer from the data that in our device the sign of the Rashba and Dresselhaus constants are opposite.

preprint2014arXiv

Suppressed decay of a laterally confined persistent spin helix

We experimentally investigate the dynamics of a persistent spin helix in etched GaAs wire structures of 2 to 80 um width. Using magneto-optical Kerr rotation with high spatial resolution, we determine the lifetime of the spin helix. A few nanoseconds after locally injecting spin polarization into the wire, the polarization is strongly enhanced as compared to the two-dimensional case. This is mostly attributed to a transition to one-dimensional diffusion, strongly suppressing diffusive dilution of spin polarization. The intrinsic lifetime of the helical mode is only weakly increased, which indicates that the channel confinement can only partially suppress the cubic Dresselhaus spin-orbit interaction.

preprint2013arXiv

Dynamics of a localized spin excitation close to the spin-helix regime

The time evolution of a local spin excitation in a (001)-confined two-dimensional electron gas subjected to Rashba and Dresselhaus spin-orbit interactions of similar strength is investigated theoretically and compared with experimental data. Specifically, the consequences of the finite spatial extension of the initial spin polarization is studied for non-balanced Rashba and Dresselhaus terms and for finite cubic Dresselhaus spin-orbit interaction. We show that the initial out-of-plane spin polarization evolves into a helical spin pattern with a wave number that gradually approaches the value $q_0$ of the persistent spin helix mode. In addition to an exponential decay of the spin polarization that is proportional to both the spin-orbit imbalance and the cubic Dresselhaus term, the finite width $w$ of the spin excitation reduces the spin polarization by a factor that approaches $\exp(-q_0^2 w^2/2)$ at longer times.

preprint2013arXiv

Imaging magnetoelectric subbands in ballistic constrictions

We perform scanning gate experiments on ballistic constrictions in the presence of small perpendicular magnetic fields. The constrictions form the entrance and exit of a circular gate-defined ballistic stadium. Close to constrictions we observe sets of regular fringes creating a checker board pattern. Inside the stadium conductance fluctuations governed by chaotic dynamics of electrons are visible. The checker board pattern allows us to determine the number of transmitted modes in the constrictions forming between the tip-induced potential and gate-defined geometry. Spatial investigation of the fringe pattern in a perpendicular magnetic field shows a transition from electrostatic to magnetic depopulation of magnetoelectric subbands. Classical and quantum simulations agree well with different aspects of our observations.

preprint2013arXiv

Interference of electrons in backscattering through a quantum point contact

Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts (QPC) we observe branches caused by electron backscattering decorated with interference fringes similar to previous observations by Topinka et al. We investigate the branches at different points of a conductance plateau as well as between plateaus, and demonstrate that the most dramatic changes in branch pattern occur at the low-energy side of the conductance plateaus. The branches disappear at magnetic fields as low as 50 mT demonstrating the importance of backscattering for the observation of the branching effect. The spacing between the interference fringes varies by more than 50% for different branches across scales of microns. Several scenarios are discussed to explain this observation.

preprint2013arXiv

Resolving Spin-Orbit and Hyperfine Mediated Electric Dipole Spin Resonance in a Quantum Dot

We investigate the electric manipulation of a single electron spin in a single gate-defined quantum dot. We observe that so-far neglected differences between the hyperfine and spin-orbit mediated electric dipole spin resonance conditions have important consequences at high magnetic fields. In experiments using adiabatic rapid passage to invert the electron spin, we observe an unusually wide and asymmetric response as a function of magnetic field. Simulations support the interpretation of the lineshape in terms of four different resonance conditions. These findings may lead to isotope-selective control of dynamic nuclear polarization in quantum dots.

preprint2012arXiv

Direct mapping of the formation of a persistent spin helix: Supplementary information

The spin-orbit interaction (SOI) in zincblende semiconductor quantum wells can be set to a symmetry point, in which spin decay is strongly suppressed for a helical spin mode. Signatures of such a persistent spin helix (PSH) have been probed using the transient spin grating technique, but it has not yet been possible to observe the formation and the helical nature of a PSH. Here we directly map the diffusive evolution of a local spin excitation into a helical spin mode by a time- and spatially resolved magneto-optical Kerr rotation technique. Depending on its in-plane direction, an external magnetic field interacts differently with the spin mode and either highlights its helical nature or destroys the SU(2) symmetry of the SOI and thus decreases the spin lifetime. All relevant SOI parameters are experimentally determined and confirmed with a numerical simulation of spin diffusion in the presence of SOI.

preprint2011arXiv

Imaging the lateral shift of a quantum-point contact using scanning-gate microscopy

We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.

preprint2011arXiv

Transport Properties of Clean Quantum Point Contacts

Quantum point contacts are fundamental building blocks for mesoscopic transport experiments and play an important role in recent interference- and fractional quantum Hall experiments. However, it is not clear how electron-electron interactions and the random disorder potential influence the confinement potential and give rise to phenomena like the mysterious 0.7 anomaly. Novel growth techniques of GaAs/AlGaAs heterostructures for high-mobility two-dimensional electron gases enable us to investigate quantum point contacts with a strongly suppressed disorder potential. These clean quantum point contacts indeed show transport features that are obscured by disorder in standard samples. From this transport data, we are able to extract the parameters of the confinement potential which describe its shape in longitudinal and transverse direction. Knowing the shape (and hence the slope) of the confinement potential might be crucial to predict which interaction-induced states can form in quantum point contacts.

preprint2009arXiv

Cyclotron effect on coherent spin precession of two-dimensional electrons

We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the $(001)$-grown structures without external magnetic fields, we observe coherent oscillations of the electron spin polarization about the effective spin-orbit field. In non-quantizing magnetic fields applied normal to the sample plane, the cyclotron motion of the electrons rotates the effective spin-orbit field. This rotation leads to fast oscillations in the spin polarization about a non-zero value and a strong increase in the spin dephasing time in our experiments. These two effects are absent in the $(110)$-grown structure due to the different symmetry of its effective spin-orbit field. The measurements are in excellent agreement with our theoretical model.