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Researcher profile

Varun Raghunathan

Varun Raghunathan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phphysics.optics

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Published work

2 published item(s)

preprint2022arXiv

Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation

Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles > 15 degrees) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in monolayer (ML), natural BL, and tBL WSe2. Neutral biexciton (XX) is observed in tBL, while being undetected in nonencapsulated ML and BL, demonstrating unique effects of disorder screening in tBLs. The XX as well as charged biexciton are robust to thermal dissociation and are controllable by electrostatic doping. Vanishing of momentum-indirect IL excitons with increasing electron doping is demonstrated in tBL, resulting from the near alignment of Q-K and K-K valleys. Intermediate misorientation samples offer a high degree of control of excitonic complexes while offering possibilities for studying exciton-phonon coupling, band alignment, and screening.

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preprint2020arXiv

Origin of selective enhancement of sharp defect emission lines in monolayer WSe$_2$ on rough metal substrate

The defect states in atomically thin layers of transition metal dichalcogenides are promising candidates for single photon emission. However, the brightness of such quantum emission is often weak, and is accompanied with undesirable effects like spectral diffusion and strong background emission. By placing a monolayer WSe$_2$ directly on a rough gold substrate, here we show a selective enhancement of sharp defect-bound exciton peaks, coupled with a suppressed spectral diffusion and strong quenching of background luminescence. By combining the experimental data with detailed electromagnetic simulations, we reveal that such selective luminescence enhancement originates from a combination of the Purcell effect and a wavelength dependent increment of the excitation electric field at the tips of tall rough features, coupled with a localized strain induced exciton funneling effect. Notably, insertion of a thin hexagonal Boron Nitride (hBN) sandwich layer between WSe$_2$ and the Au film results in a strong enhancement of the background luminescence, obscuring the sharp defect peaks. The findings demonstrate a simple strategy of using monolayer WSe$_2$ supported by thin metal film that offers a possibility of achieving quantum light sources with high purity, high brightness, and suppressed spectral diffusion.

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