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Kausik Majumdar

Kausik Majumdar contributes to research discovery and scholarly infrastructure.

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Published work

16 published item(s)

preprint2022arXiv

A High-Quality Entropy Source Using van der Waals Heterojunction for True Random Number Generation

Generators of random sequences used in high-end applications such as cryptography rely on entropy sources for their indeterminism. Physical processes governed by the laws of quantum mechanics are excellent sources of entropy available in nature. However, extracting enough entropy from such systems for generating truly random sequences is challenging while maintaining the feasibility of the extraction procedure for real-world applications. Here, we present a compact and an all-electronic van der Waals (vdW) heterostructure-based device capable of detecting discrete charge fluctuations for extracting entropy from physical processes and use it for the generation of independent and identically distributed (IID) true random sequences. We extract a record high value ($>0.98~bits/bit$) of min-entropy using the proposed scheme. We demonstrate an entropy generation rate tunable over multiple orders of magnitude and show the persistence of the underlying physical process for temperatures ranging from cryogenic to ambient conditions. We verify the random nature of the generated sequences using tests such as NIST SP 800-90B standard and other statistical measures and verify the suitability our random sequence for cryptographic applications using the NIST SP 800-22 standard. The generated random sequences are then used in implementing various randomized algorithms without any preconditioning steps.

preprint2022arXiv

Electrically Tunable Localized versus Delocalized Intralayer Moiré Excitons and Trions in a Twisted MoS$_2$ Bilayer

Moiré superlattice-induced sub-bands in twisted van der Waals homo- and hetero-structures govern their optical and electrical properties, rendering additional degrees of freedom such as twist angle. Here, we demonstrate the moiré superlattice effects on the intralayer excitons and trions in a twisted bilayer of MoS$_2$ of H-type stacking at marginal twist angles. We identify the emission from localized and multiple delocalized sub-bands of intralayer moiré excitons and show their electrical modulation by the corresponding trion formation. The electrical control of the oscillator strength of the moiré excitons also results in a strong tunability of resonant Raman scattering. We find that the gate-induced doping significantly modulates the electronic moiré potential, however leaves the excitonic moiré confinement unaltered. This effect, coupled with variable moiré trap filling by tuning the optical excitation density, allows us to delineate the different phases of localized and delocalized moiré trions. We demonstrate that the moiré excitons exhibit strong valley coherence that changes in a striking non-monotonic W-shape with gating due to motional narrowing. These observations from the simultaneous electrostatic control of quasiparticle-dependent moiré potential will lead to exciting effects of tunable many-body phenomena in moiré superlattices.

preprint2022arXiv

Highly nonlinear biexcitonic photocurrent from ultrafast inter-layer charge transfer

Strong Coulomb interaction in monolayer semiconductors allows them to host optically active large many-body states, such as the five-particle state, charged biexciton. Strong nonlinear light absorption by the charged biexciton under spectral resonance, coupled with its charged nature, makes it intriguing for nonlinear photodetection - an area that is hitherto unexplored. Using the high built-in vertical electric field in an asymmetrically designed few-layer graphene encapsulated 1L-WS$_2$ heterostructure, here we report a large, highly nonlinear photocurrent arising from the strong absorption by two charged biexciton species under zero external bias (self-powered mode). Time-resolved measurement reveals that the generated charged biexcitons transfer to the few-layer graphene in a timescale of sub-5 ps, indicating an ultrafast intrinsic limit of the photoresponse. By using single- and two-color photoluminescence excitation spectroscopy, we show that the two biexcitonic peaks originate from bright-dark and bright-bright exciton-trion combinations. Such innate nonlinearity in the photocurrent due to its biexcitonic origin, coupled with the ultrafast response due to swift inter-layer charge transfer, exemplifies the promise of manipulating many-body effects in monolayers towards viable optoelectronic applications.

preprint2022arXiv

Integration of 3-level MoS$_2$ multi-bridge channel FET with 2D layered contact and gate dielectric

Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a natural choice for devices that use semiconducting layered materials (such as, MoS$_2$) as the channel due to their dangling-bond-free ultra-thin nature and the possibility of layer-by-layer transfer. MoS$_2$-based MBCFET is thus an attractive proposition for drive current boost without compromising on the electrostatics and footprint. Here we demonstrate a 3-level MoS$_2$ MBCFET, where each vertically stacked channel is dual-gated to achieve a saturation current of 174.9 $μ$A (which translates to \txc{90 $μ$A per $μ$m footprint width (@2.7 $μ$m channel length), a near-ideal sub-threshold slope of 63 mV/dec, and an on-off ratio $>$$10^8$. This work sets the benchmark for layer-material-based MBCFET in terms of the number of parallel channels integrated, simultaneously providing high drive current and excellent electrostatic control.

preprint2022arXiv

Probing biexciton in monolayer WS$_2$ through controlled many-body interaction

The monolayers of semiconducting transition metal dichalcogenides host strongly bound excitonic complexes and are an excellent platform for exploring many-body physics. Here we demonstrate a controlled kinetic manipulation of the five-particle excitonic complex, the charged biexciton, through a systematic dependence of the biexciton peak on excitation power, gate voltage, and temperature using steady-state and time-resolved photoluminescence (PL). With the help of a combination of the experimental data and a rate equation model, we argue that the binding energy of the charged biexciton is less than the spectral separation of its peak from the neutral exciton. We also note that while the momentum-direct radiative recombination of the neutral exciton is restricted within the light cone, such restriction is relaxed for a charged biexciton recombination due to the presence of near-parallel excited and final states in the momentum space.

preprint2022arXiv

Trion-trion annihilation in monolayer WS$_2$

Strong Coulomb interaction in monolayer transition metal dichalcogenides can facilitate nontrivial many-body effects among excitonic complexes. Many-body effects like exciton-exciton annihilation (EEA) have been widely explored in this material system. However, a similar effect for charged excitons (or trions), that is, trion-trion annihilation (TTA), is expected to be relatively suppressed due to repulsive like-charges, and has not been hitherto observed in such layered semiconductors. By a gate-dependent tuning of the spectral overlap between the trion and the charged biexciton through an "anti-crossing"-like behaviour in monolayer WS$_2$, here we present an experimental observation of an anomalous suppression of the trion emission intensity with an increase in gate voltage. The results strongly correlate with time-resolved measurements, and are inferred as a direct evidence of a nontrivial TTA resulting from non-radiative Auger recombination of a bright trion, and the corresponding energy resonantly promoting a dark trion to a charged biexciton state. The extracted Auger coefficient for the process is found to be tunable ten-fold through a gate-dependent tuning of the spectral overlap.

preprint2021arXiv

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts

Due to Fermi level pinning (FLP), metal-semiconductor contact interfaces result in a Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to efficiently inject both electrons and holes using the same metal - an essential requirement for several applications, including light-emitting devices and complementary logic. Interestingly, modulating the SBH in the Schottky-Mott limit of de-pinned van der Waals (vdW) contacts becomes possible. However, accurate extraction of the SBH is essential to exploit such contacts to their full potential. In this work, we propose a simple technique to accurately estimate the SBH at the vdW contact interfaces by circumventing several ambiguities associated with SBH extraction. Using this technique on several vdW contacts, including metallic 2H-TaSe$_2$, semi-metallic graphene, and degenerately doped semiconducting SnSe$_2$, we demonstrate that vdW contacts exhibit a universal de-pinned nature. Superior ambipolar carrier injection properties of vdW contacts are demonstrated (with Au contact as a reference) in two applications, namely, (a) pulsed electroluminescence from monolayer WS$_2$ using few-layer graphene (FLG) contact, and (b) efficient carrier injection to WS$_2$ and WSe$_2$ channels in both nFET and pFET modes using 2H-TaSe$_2$ contact.

preprint2021arXiv

Combinatorial Large-area MoS2/Anatase-TiO2 interface: A Pathway to Emergent Optical and Opto-electronic Functionalities

Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser deposited (PLD) MoS2 thin film, a layer of TiO2 is grown by using both atomic layer deposition (ALD) and PLD. These two different techniques emanate TiO2 layers with different crystalline properties, thicknesses and interfacial morphologies, subsequently influencing the electronic and optical properties of the interfaces. In addition, they manifest a boost in the extent of p-type doping with increasing thickness of TiO2, as emerged after analyzing the core-level shifts of the X-ray photoelectron spectra (XPS). Density functional analysis of the MoS2/Anatase-TiO2 interfaces, for pristine and in presence of a wide range of interfacial defects, could explain the interdependence of doping and the terminating atomic-surface of TiO2 on MoS2. The optical properties of the interface, encompassing the photoluminescence, transient absorption and z-scan two-photon absorption indicate the presence of defect-induced localized mid-gap levels in MoS2/TiO2 (PLD), resulting quenched exciton signals. On the contrary, the relatively defect-free interface in MoS2/TiO2 (ALD) demonstrates a clear presence of both A and B excitons of MoS2. From the investigation of optical properties, we indicate that MoS2/TiO2 (PLD) interface may act as a promising saturable absorber. Moreover, MoS2/TiO2 (PLD) interface had resulted a better photo-transport. A potential application of MoS2/TiO2 (PLD) is demonstrated by the fabrication of a p-type photo-transistor with the ionic-gel top gate.

preprint2021arXiv

Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire

Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here we demonstrate a dual-gated junctionless nanowire \emph{p}-type field effect transistor using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling-bond-free, high quality hBN gate dielectric, allows us to achieve a phonon-limited field effect hole mobility of $570\,\mathrm{cm^{2}/V\cdot s}$ at 270 K, which is well above state-of-the-art strained Si hole mobility. By lowering the temperature, the mobility increases to $1390\,\mathrm{cm^{2}/V\cdot s}$ and becomes primarily limited by Coulomb scattering. \txc{The combination of an electron affinity of $\sim$4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal-contact interface}, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual-gated operation, we achieve a high drive current of $216\,\mathrm{μA/μm}$ while maintaining an on-off ratio in excess of $2\times10^4$. The findings have intriguing prospects for alternate channel material based next-generation electronics.

preprint2020arXiv

Anharmonicity in Raman-active phonon modes in atomically thin MoS$_2$

Phonon-phonon anharmonic effects have a strong influence on the phonon spectrum; most prominent manifestation of these effects are the softening (shift in frequency) and broadening (change in FWHM) of the phonon modes at finite temperature. Using Raman spectroscopy, we studied the temperature dependence of the FWHM and Raman shift of $\mathrm{E_{2g}^1}$ and $\mathrm{A_{1g}}$ modes for single-layer and natural bilayer MoS$_2$ over a broad range of temperatures ($8 < $T$ < 300$ K). Both the Raman shift and FWHM of these modes show linear temperature dependence for $T>100$ K, whereas they become independent of temperature for $T<100$ K. Using first-principles calculations, we show that three-phonon anharmonic effects intrinsic to the material can account for the observed temperature-dependence of the line-width of both the modes. It also plays an important role in determining the temperature-dependence of the frequency of the Raman modes. The observed evolution of the line-width of the A$_{1g}$ mode suggests that electron-phonon processes are additionally involved. From the analysis of the temperature-dependent Raman spectra of MoS$_2$ on two different substrates -- SiO$_2$ and hexagonal boron nitride, we disentangle the contributions of external stress and internal impurities to these phonon-related processes. We find that the renormalization of the phonon mode frequencies on different substrates is governed by strain and intrinsic doping. Our work establishes the role of intrinsic phonon anharmonic effects in deciding the Raman shift in MoS$_2$ irrespective of substrate and layer number.

preprint2020arXiv

Anomalous Stark Shift of Excitonic Complexes in Monolayer Semiconductor

Monolayer transition metal dichalcogenide semiconductors host strongly bound two-dimensional excitonic complexes, and form an excellent platform for probing many-body physics through manipulation of Coulomb interaction. Quantum confined Stark effect is one of the routes to dynamically tune the emission line of these excitonic complexes. In this work, using a high quality graphene/hBN/WS$_2$/hBN/Au vertical heterojunction, we demonstrate for the first time, an out-of-plane electric field driven change in the sign of the Stark shift from blue to red for four different excitonic species, namely, the neutral exciton, the charged exciton (trion), the charged biexciton, and the defect-bound exciton. Such universal non-monotonic Stark shift with electric field arises from a competition between the conventional quantum confined Stark effect driven red shift and a suppressed binding energy driven anomalous blue shift of the emission lines, with the latter dominating in the low field regime. We also find that the encapsulating environment of the monolayer TMDC plays an important role in wave function spreading, and hence in determining the magnitude of the blue Stark shift. The results for neutral and charged excitonic species are in excellent agreement with calculations from Bethe-Salpeter Equation that uses seven-band per spin tight binding Hamiltonian. The findings have important implications in probing many-body interaction in the two dimension as well as in developing layered semiconductor based tunable optoelectronic devices.

preprint2020arXiv

Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS$_2$/2H-MoS$_2$ T-Junction

Metal-based electronics is attractive for fast and radiation-hard electronic circuits and remains one of the longstanding goals for researchers. The emergence of 1T-TaS$_2$, a layered material exhibiting strong charge density wave (CDW) driven resistivity switching that can be controlled by an external stimulus such as electric field and optical pulses, has triggered a renewed interest in metal-electronics. Here we demonstrate a negative differential resistor (NDR) using electrically driven CDW phase transition in an asymmetrically designed T-junction made up of 1T-TaS$_2$/2H-MoS$_2$ van der Waals heterostructure. The principle of operation of the proposed device is governed by majority carrier transport and is distinct from usual NDR devices employing tunneling of carriers, thus avoids the bottleneck of weak tunneling efficiency in van der Waals heterojunctions. Consequently, we achieve a peak current density in excess of $10^5$ nA$μ$m$^{-2}$, which is about two orders of magnitude higher than that obtained in typical layered material based NDR implementations. The peak current density can be effectively tuned by an external gate voltage as well as photo-gating. The device is robust against ambiance-induced degradation and the characteristics repeat in multiple measurements over a period of more than a month. The findings are attractive for the implementation of active metal-based functional circuits.

preprint2020arXiv

Gate-tunable trion switch for excitonic device applications

Trions are excitonic species with a positive or negative charge, and thus, unlike neutral excitons, the flow of trions can generate a net detectable charge current. Trions under favourable doping conditions can be created in a coherent manner using resonant excitation. In this work, we exploit these properties to demonstrate a gate controlled trion switch in a few-layer graphene/monolayer WS2/monolayer graphene vertical heterojunction. By using a high resolution spectral scan through a temperature controlled variation of the bandgap of the WS2 sandwich layer, we obtain a gate voltage dependent vertical photocurrent strongly relying on the spectral position of the excitation, and the photocurrent maximizes when the excitation energy is resonant with the trion peak position. Further, the resonant photocurrent thus generated can be effectively controlled by a back gate voltage applied through the incomplete screening of the bottom monolayer graphene, and the photocurrent strongly correlates with the gate dependent trion intensity, while the non-resonant photocurrent exhibits only a weak gate dependence -unambiguously proving a trion driven photocurrent generation under resonance. We estimate a sub-100 fs switching time of the device. The findings are useful towards demonstration of ultra-fast excitonic devices in layered materials.

preprint2020arXiv

Origin of selective enhancement of sharp defect emission lines in monolayer WSe$_2$ on rough metal substrate

The defect states in atomically thin layers of transition metal dichalcogenides are promising candidates for single photon emission. However, the brightness of such quantum emission is often weak, and is accompanied with undesirable effects like spectral diffusion and strong background emission. By placing a monolayer WSe$_2$ directly on a rough gold substrate, here we show a selective enhancement of sharp defect-bound exciton peaks, coupled with a suppressed spectral diffusion and strong quenching of background luminescence. By combining the experimental data with detailed electromagnetic simulations, we reveal that such selective luminescence enhancement originates from a combination of the Purcell effect and a wavelength dependent increment of the excitation electric field at the tips of tall rough features, coupled with a localized strain induced exciton funneling effect. Notably, insertion of a thin hexagonal Boron Nitride (hBN) sandwich layer between WSe$_2$ and the Au film results in a strong enhancement of the background luminescence, obscuring the sharp defect peaks. The findings demonstrate a simple strategy of using monolayer WSe$_2$ supported by thin metal film that offers a possibility of achieving quantum light sources with high purity, high brightness, and suppressed spectral diffusion.

preprint2020arXiv

Spectrally tunable, large Raman enhancement from nonradiative energy transfer in van der Waals heterostructure

Raman enhancement techniques are essential for fundamental studies in light-matter interactions and find widespread application in microelectronics, bio-chemical sensing, and clinical diagnosis. Two-dimensional (2D) materials and their van der Waals heterostructures (vdWHs) are emerging rapidly as potential platforms for Raman enhancement. Here, we experimentally demonstrate a new technique of Raman enhancement driven by nonradiative energy transfer (NRET) achieving a $10$-fold enhancement in the Raman intensity in a vertical vdWH comprising of a monolayer transition metal dichalcogenide (1L-TMD) placed on a multilayer SnSe\tsub2. Consequently, several weak Raman peaks become visible which are otherwise imperceptible. We also show a strong modulation of the enhancement factor by tuning the spectral overlap between the 1L-TMD and SnSe\tsub2 through temperature variation and the results are in remarkable agreement with a Raman polarizability model capturing the effect of NRET. The observed NRET driven Raman enhancement is a novel mechanism which has not been experimentally demonstrated thus far and is distinct from conventional surface (SERS), tip (TERS) or Interference enhanced Raman scattering (IERS) mechanisms that are driven solely by charge transfer or electric field enhancement. The mechanism can also be used in synergy with plasmonic nanostructures to achieve additional selectivity and sensitivity beyond hot spot engineering for applications like molecular detection using 2D/molecular hybrids. Our results open new avenues for engineering Raman enhancement techniques coupling the advantages of uniform enhancement accessible across a wide junction area in vertical vdWHs.

preprint2020arXiv

Unified benchmarking and characterization protocol for nanomaterial-based heterogeneous photodetector technologies

Over the last few years, there has been a rapid growth towards demonstrating highly sensitive, fast photodetectors using photoactive nano-materials. As with any other developing and highly inter-disciplinary field, the existing reports exhibit a large spread in the data due to less optimized materials and non-standardized characterization protocols. This calls for a streamlined performance benchmarking requirement to accelerate technological adoption of the promising candidates. The goal of this paper is four-fold: (i) to address the key challenges to perform such benchmarking exercise; (ii) to elucidate the right figures of merit to look for, and in particular, to demonstrate that noise-equivalent-power ($N\!E\!P$) is a more reliable sensitivity metric than other commonly used ones, such as responsivity ($R$) and specific detectivity ($D^*$); (iii) to propose $N\!E\!P$ versus frequency of operation ($f$) as a single, unified benchmarking chart that could be used for apple-to-apple comparison among heterogeneous detector technologies; and (iv) to propose a simple, yet streamlined characterization protocol that can be followed while reporting photodetector performance.