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Vaidotas Miseikis

Vaidotas Miseikis appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.chem-phphysics.optics

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Published work

11 published item(s)

preprint2020arXiv

30$^\circ$-twisted bilayer graphene quasicrystals from chemical vapor deposition

The artificial stacking of atomically thin crystals suffers from intrinsic limitations in terms of control and reproducibility of the relative orientation of exfoliated flakes. This drawback is particularly severe when the properties of the system critically depend on the twist angle, as in the case of the dodecagonal quasicrystal formed by two graphene layers rotated by 30$^\circ$. Here we show that large-area 30$^\circ$-rotated bilayer graphene can be grown deterministically by chemical vapor deposition on Cu, eliminating the need of artificial assembly. The quasicrystals are easily transferred to arbitrary substrates and integrated in high-quality hBN-encapsulated heterostructures, which we process into dual-gated devices exhibiting carrier mobility up to $10^5$ cm$^2$/Vs. From low-temperature magnetotransport, we find that the graphene quasicrystals effectively behave as uncoupled graphene layers, showing 8-fold degenerate quantum Hall states: this result indicates that the Dirac cones replica detected by previous photo-emission experiments do not contribute to the electrical transport.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-speed double layer graphene electro-absorption modulator on SOI waveguide

We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Anisotropic straining of graphene using micropatterned SiN membranes

We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load $ΔP$ over elliptical regions of free-standing graphene yields measurable deviations from hydrostatic strain conventionally observed in radially-symmetric microbubbles. The top hydrostatic strain $\bar{\varepsilon}$ we observe is estimated to be $\approx0.7\%$ for $ΔP = 1\,{\rm bar}$ in graphene clamped to elliptical SiN holes with axis $40$ and $20\,{\rm μm}$. In the same configuration, we report a $G_\pm$ splitting of $10\,{\rm cm^{-1}}$ which is in good agreement with the calculated anisotropy $Δ\varepsilon \approx 0.6\%$ for our device geometry. Our results are consistent with the most recent reports on the Grüneisen parameters. Perspectives for the achievement of arbitrary strain configurations by designing suitable SiN holes and boundary clamping conditions are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration

We demonstrate rapid deterministic (seeded) growth of large single-crystals of graphene by chemical vapour deposition (CVD) utilising pre-patterned copper substrates with chromium nucleation sites. Arrays of graphene single-crystals as large as several hundred microns are grown with a periodicity of up to 1 mm. The graphene is transferred to target substrates using aligned and contamination-free semi-dry transfer. The high quality of the synthesised graphene is confirmed by Raman spectroscopy and transport measurements, demonstrating room-temperature carrier mobility of 21 000 cm2 / V s when transferred on top of hexagonal boron nitride. By tailoring the nucleation of large single-crystals according to the desired device geometry, it will be possible to produce complex device architectures based on single-crystal graphene, thus paving the way to the adoption of CVD graphene in wafer-scale fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts

Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale single-crystal monolayer graphene grown by chemical vapor deposition. The control of the edge trajectories is demonstrated by the observation of various fractional quantum resistances, as a result of a controllable inter-edge scattering. Experimental data are successfully modeled both numerically and within the Landauer-Buettiker formalism. Our architecture is particularly promising and unique in view of the investigation of quantum transport via scanning probe microscopy, since graphene constitutes the topmost layer of the device. For this reason, it can be approached and perturbed by a scanning probe down to the limit of mechanical contact.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low-temperature quantum transport in CVD-grown single crystal graphene

Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall reactor and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the measured single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples is located at back-gate voltages of less than 10V, and their mobility can reach 11000 cm2/Vs. More than 12 flat and discernible half-integer quantum Hall plateaus have been observed in high magnetic field on both the electron and hole side of the Dirac point. At low magnetic field, the magnetoresistance shows a clear weak localization peak. Using the theory of McCann et al., we find that the inelastic scattering length is larger than 1 μm in these samples even at the charge neutrality point.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Rapid and catalyst-free CVD growth of graphene on hBN

Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost perfect reticular matching. Chemical vapour deposition (CVD) is presently considered the most scalable approach to grow graphene directly on h-BN. However, for the catalyst-free approach, poor control over the shape and crystallinity of the graphene grains and low growth rates are typically reported. In this work we investigate the crystallinity of differently shaped grains and identify a path towards a real van der Waals epitaxy of graphene on h-BN by adopting a catalyst-free CVD process. We demonstrate the polycrystalline nature of circular-shaped pads and attribute the stemming of different oriented grains to airborne contamination of the h-BN flakes. We show that single-crystal grains with six-fold symmetry can be obtained by adopting high hydrogen partial pressures during growth. Notably, growth rates as high as 100 nm/min are obtained by optimizing growth temperature and pressure. The possibility of synthesizing single-crystal graphene on h-BN with appreciable growth rates by adopting a simple CVD approach is a step towards an increased accessibility of this promising van der Waals heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Revealing the multi-bonding state between hydrogen and graphene-supported Ti clusters

Hydrogen adsorption on graphene-supported metal clusters has brought much controversy due to the complex nature of the bonding between hydrogen and metal clusters. The bond types of hydrogen and graphene-supported Ti clusters are experimentally and theoretically investigated. Transmission electron microscopy shows that Ti clusters of nanometer-size are formed on graphene. Thermal desorption spectroscopy captures three hydrogen desorption peaks from hydrogenated graphene-supported Ti clusters. First principle calculations also found three types of interaction: Two types of bonds with different partial ionic character and physisorption. The physical origin for this rests on the charge state of the Ti clusters: when Ti clusters are neutral, H2 is dissociated, and H forms bonds with the Ti cluster. On the other hand, H2 is adsorbed in molecular form on positively charged Ti clusters, resulting in physisorption. Thus, this work clarifies the bonding mechanisms of hydrogen on graphene-supported Ti clusters.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction

By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition (CVD) approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor

In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: i) using ex-situ oxidised foils; ii) performing annealing in an inert atmosphere prior to growth; iii) enclosing the foils to lower the precursor impingement flux during growth. Growth rates as high as 14.7 and 17.5 micrometers per minute are obtained on flat and folded foils, respectively. Thus, single-crystal grains with lateral size of about one millimetre can be obtained in just one hour. The samples are characterised by optical microscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy as well as selected area electron diffraction (SAED) and low-energy electron diffraction (LEED), which confirm the high quality and homogeneity of the films. The development of a process for the quick production of large grain graphene in a commonly used commercial CVD reactor is a significant step towards an increased accessibility to millimetre-sized graphene crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene

The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties.

0 citations0 reviewsNo code linkedOpen access