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Researcher profile

Stefan Heun

Stefan Heun contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.chem-phquant-ph

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Published work

10 published item(s)

preprint2022arXiv

Black Phosphorus n-type doping by Cu: a microscopic surface investigation

We study surface charge transfer doping of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential of the local investigation, showing that the n-type doping effect of copper on bP is short-ranged. These experimental results are substantiated by first-principles simulations, which quantify the role of cluster size for an effective n-type doping of bP and explain the Coulomb blockade by an electronic decoupling of the topmost bP layer from the underlying layers driven by the copper cluster. Our results provide novel understanding, difficult to retrieve by transport measurements, of the doping of bP by copper, which appears promising for the implementation of ultra-sharp p-n junctions in bP.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Rb-induced (3x1) and (6x1) reconstructions on Si(111)-(7x7): A LEED and STM study

We present a study of the rubidium adsorption on the Si(111)-(7x7) surface and the related Rb-induced reconstructions as a function of deposition temperature and Rb-coverage via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Sample analysis via LEED allowed to observe for the first time a Rb/Si(111)-(6x1) reconstruction. The STM image analysis allowed to obtain the first real space characterization of the Rb/Si(111)-(3x1) surface. In addition, STM provided a direct and local information on the surface arrangement as well as further insights on the interaction between Si and Rb atoms and on the growth dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

3D arrangement of epitaxial graphene conformally grown on porousified crystalline SiC

Nanoporous materials represent a versatile solution for a number of applications ranging from sensing, energy applications, catalysis, drug delivery, and many others. The synergy between the outstanding properties of graphene with a three-dimensional porous structure, circumventing the limits of its 2D nature, constitutes therefore a breakthrough for many fields. We report the first three-dimensional growth of epitaxial graphene on a porousified crystalline 4H-SiC(0001). The wafer porosification is performed via a sequence of metal-assisted photochemical and photoelectrochemical etching in hydrofluoric acid based electrolytes. Pore dimensions of the matrix have been evaluated by electron tomography resulting in an average diameter of 180 nm. Graphene growth is performed in an ultra high vacuum environment at a base pressure of $10^{-11}$ mbar. The graphene growth inside the pores is uniform as confirmed by Transmission Electron Microscopy (TEM) analysis. Raman spectroscopy confirms the high quality of the graphene with a 2D/G ratio $>1$ and an average graphene crystal size of $\approx$ 100 nm. Furthermore, it demonstrates a uniform coverage of graphene across the whole sample area. The surface-to-volume ratio of this novel material, its properties, the tunability of the pore size and the scalability of the surface porosification process offer a game changing perspective for a large number of applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Evidence of Josephson coupling in a few-layer black phosphorus planar Josephson junction

Setting up strong Josephson coupling in van der Waals materials in close proximity to superconductors offers several opportunities both to inspect fundamental physics and to develop novel cryogenic quantum technologies. Here we show evidence of Josephson coupling in a planar few-layer black Phosphorus junction. The planar geometry allows us to probe the junction behavior by means of external gates, at different carrier concentrations. Clear signatures of Josephson coupling are demonstrated by measuring supercurrent flow through the junction at milli Kelvin temperatures. Manifestation of Fraunhofer pattern with a transverse magnetic field is also reported, confirming the Josephson coupling. These findings represent the first evidence of proximity Josephson coupling in a planar junction based on a van der Waals material beyond graphene and open the way to new studies, exploiting the peculiar properties of exfoliated black phosphorus thin flakes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)

We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene flake was deposited on top of it by a polymer-based transfer technique, and a Hall bar device was fabricated from the graphene flake. STM was employed again to study the graphene flake under UHV conditions after device fabrication and showed that surface quality is preserved. Electrical transport measurements, carried out at low temperature in magnetic field, revealed back gate modulation of carrier type and density in the graphene channel and showed the occurrence of weak localization. Under these experimental conditions, no leakage current between back gate and graphene channel was detected.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Morphology of Ti on Monolayer Nanocrystalline Graphene and its Unexpectedly Low Hydrogen Adsorption

Hydrogen adsorption on graphene can be increased by functionalization with Ti. This requires dispersing Ti islands on graphene as small and dense as possible, in order to increase the number of hydrogen adsorption sites per Ti atom. In this report, we investigate the morphology of Ti on nanocrystalline graphene and its hydrogen adsorption by scanning tunneling microscopy and thermal desorption spectroscopy, and compare the results with equivalent measurements on single-crystalline graphene. Nanocrystalline graphene consists of extremely small crystal grains of < 5 nm size. Ti atoms preferentially adsorb at the grain boundaries of nanocrystalline graphene and form smaller and denser islands compared to single-crystalline graphene. Surprisingly, however, hydrogen adsorbs less to Ti on nanocrystalline graphene than to Ti on single-crystalline graphene. In particular, hydrogen hardly chemisorbs to 1 ML of Ti on nanocrystalline graphene. This may be attributed to strong bonds between Ti and defects located along the grain boundaries in nanocrystalline graphene. This mechanism might apply to other metals, as well, and therefore our results suggest that when functionalizing graphene by metal atoms for the purpose of hydrogen storage or other chemical reactions, it is important to consider not only the morphology of the resulting surface, but also the influence of graphene on the electronic states of the metal.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Programmable quantum Hall bisector: towards a novel resistance standard for quantum metrology

We demonstrate a programmable quantum Hall circuit that implements a novel iterative voltage bisection scheme and allows obtaining any binary fraction $(k/2^n)$ of the fundamental resistance quantum $R_K/2=h/2e^2$. The circuit requires a number $n$ of bisection stages that only scales logarithmically with the precision of the fraction. The value of $k$ can be set to any integer between 1 and $2^n$ by proper gate configuration. The architecture exploits gate-controlled routing, mixing and equilibration of edge modes of robust quantum Hall states. The device does not contain {\em any} internal ohmic contact potentially leading to spurious voltage drops. Our scheme addresses key critical aspects of quantum Hall arrays of resistance standards, which are today widely studied and used to create custom calibration resistances. The approach is demonstrated in a proof-of-principle two-stage bisection circuit built on a high-mobility GaAs/AlGaAs heterostructure operating at a temperature of $260\,{\rm mK}$ and a magnetic field of $4.1\,{\rm T}$.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enhanced ambient stability of exfoliated black phosphorus by passivation with nickel nanoparticles

Since its discovery, the environmental instability of exfoliated black phosphorus (2D bP) has emerged as a challenge that hampers its wide application in chemistry, physics, and materials science. Many studies have been carried out to overcome this drawback. Here we show a relevant enhancement of ambient stability in few-layer bP decorated with nickel nanoparticles as compared to pristine bP. In detail, the behavior of the Ni-functionalized material exposed to ambient conditions in the dark is accurately studied by TEM (Transmission Electron Microscopy), Raman Spectroscopy, and high resolution X-ray Photoemission and Absorption Spectroscopy. These techniques provide a morphological and quantitative insight of the oxidation process taking place at the surface of the bP flakes. In the presence of Ni NPs, the decay time of 2D bP to phosphorus oxides is more than three time slower compared to pristine bP, demonstrating an improved structural stability within twenty months of observation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ohmic contact engineering in few-layer black Phosphorus field effect transistors

Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen and moisture, since the presence of uncontrolled oxidation can substantially change the behavior of the contacts. In this study, we investigate the influence of the metal used for the contacts to bP against the variability between different flakes and different samples, using three of the most used metals as contacts: Chromium, Titanium, and Nickel. Using the transfer length method, from an analysis of ten devices, both at room temperature and at low temperature, Ni results to be the best metal for Ohmic contacts to bP, providing the lowest contact resistance and minimum scattering between different devices. Moreover, we investigate the gate dependence of the current-voltage characteristics of these devices. In the accumulation regime, we observe good linearity for all metals investigated.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Non-Classical Longitudinal Magneto-Resistance in Anisotropic Black Phosphorus

Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic directions of the bP crystal were determined by Raman spectroscopy, with the zigzag axis found within 5° of the S-D axis, and the armchair axis in the orthogonal planar direction. A transverse magneto-resistance (TMR) as well as a classically-forbidden longitudinal magneto-resistance (LMR) are observed. Both are found to be strongly anisotropic and non-monotonic with increasing in-plane field. Surprisingly, the relative magnitude (in %) of the positive LMR is larger than the TMR above $\sim$32 T. Considering the known anisotropy of bP whose zigzag and armchair effective masses differ by a factor of approximately seven, our experiment strongly suggests this LMR to be a consequence of the anisotropic Fermi surface of bP.

0 citations0 reviewsNo code linkedOpen access