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Stefano Roddaro

Stefano Roddaro contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Strain-engineered wrinkles on graphene using polymeric actuators

The electronic and optical properties of graphene can be precisely tuned by generating deterministic arrangements of strain features. In this paper, we report the formation of widespread and controlled buckling delamination of monolayer graphene deposited on hexagonal boron-nitride promoted by a significant squeezing of the graphene flake and induced by polymeric micro-actuators. The flexibility of this method offers a promising technique to create arbitrary buckling geometries and arrays of wrinkles which could also be subjected to iterative folding-unfolding cycles. Further development of this method could pave the way to tune the properties of several kinds of other two-dimensional materials, such as transition metal dichalcogenides, by tailoring their surface topography.

preprint2022arXiv

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photoluminescence spectroscopies. Transconductance curves of MoS2 are compared with the current-voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. Based on ab-initio modeling, the effect is understood in terms of trapping by sulfur vacancies, which counter-intuitively depends on the field-effect, even though the graphene contact layer is positioned between the backgate and the MoS2 channel.

preprint2021arXiv

Electron localization in periodically strained graphene

Pseudo-magnetic field (PMF) in deformed graphene has been proposed as a promising and flexible method to quantum-confine electronic states and create gaps in the local density of states. Motivated by this perspective, we numerically analyze various different configurations leading to electronic localization and band flattening in periodically strained graphene. In particular, we highlight the existence of a fine structure in the pseudo-Landau levels confined in large-PMF regions, the emergence of states confined to PMF nodes as well as of snake-like orbits. In our paper, we further analyze the importance of the relative rotation and asymmetry of the strain lattice with respect to the atomic lattice and show how it can be used to modulate the PMF periodicity and to create localized orbits far from the strain points. Possible implementations and applications of the simulated structures are discussed.

preprint2020arXiv

Electron cooling with graphene-insulator-superconductor tunnel junctions and applications to fast bolometry

Electronic cooling in hybrid normal metal-insulator-superconductor junctions is a promising technology for the manipulation of thermal loads in solid state nanosystems. One of the main bottlenecks for efficient electronic cooling is the electron-phonon coupling, as it represents a thermal leakage channel to the phonon bath. Graphene is a two-dimensional material that exhibits a weaker electron-phonon coupling compared to standard metals. For this reason, we study the electron cooling in graphene-based systems consisting of a graphene sheet contacted by two insulator/superconductor junctions. We show that, by properly biasing the graphene, its electronic temperature can reach base values lower than those achieved in similar systems based on metallic ultra-thin films. Moreover, the lower electron-phonon coupling is mirrored in a lower heat power pumped into the superconducting leads, thus avoiding their overheating and preserving the cooling mechanisms. Finally, we analyze the possible application of cooled graphene as a bolometric radiation sensor. We study its main figures of merit, i.e. responsivity, noise equivalent power and response time. In particular, we show that the built-in electron refrigeration allows reaching a responsivity of the order of 50 nA/pW and a noise equivalent power of order of $\rm 10^{-18}\, W\, Hz^{-1/2}$ while the response speed is about 10 ns, corresponding to a thermal bandwidth in the order of 20MHz.

preprint2020arXiv

Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed.

preprint2020arXiv

Programmable quantum Hall bisector: towards a novel resistance standard for quantum metrology

We demonstrate a programmable quantum Hall circuit that implements a novel iterative voltage bisection scheme and allows obtaining any binary fraction $(k/2^n)$ of the fundamental resistance quantum $R_K/2=h/2e^2$. The circuit requires a number $n$ of bisection stages that only scales logarithmically with the precision of the fraction. The value of $k$ can be set to any integer between 1 and $2^n$ by proper gate configuration. The architecture exploits gate-controlled routing, mixing and equilibration of edge modes of robust quantum Hall states. The device does not contain {\em any} internal ohmic contact potentially leading to spurious voltage drops. Our scheme addresses key critical aspects of quantum Hall arrays of resistance standards, which are today widely studied and used to create custom calibration resistances. The approach is demonstrated in a proof-of-principle two-stage bisection circuit built on a high-mobility GaAs/AlGaAs heterostructure operating at a temperature of $260\,{\rm mK}$ and a magnetic field of $4.1\,{\rm T}$.

preprint2020arXiv

Strategy for accurate thermal biasing at the nanoscale

We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing technique in InAs nanowire based devices, that a nanoscale metallic constriction on a SiO2 substrate acts like a diffusive conductor with negligible electron-phonon relaxation and non-ideal leads. The non-universal impact of the leads on the achieved thermal bias -- which depends on their dimensions, shape and material composition -- is hard to minimize, but is possible to accurately calibrate in a properly designed nano-device. Our results allow to reduce the issue of the thermal bias calibration to the knowledge of the heater resistance and pave the way for accurate thermoelectric or similar measurements at the nanoscale.