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Stefano Roddaro

Stefano Roddaro appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.supr-concond-mat.str-elphysics.app-ph

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Published work

28 published item(s)

preprint2022arXiv

Strain-engineered wrinkles on graphene using polymeric actuators

The electronic and optical properties of graphene can be precisely tuned by generating deterministic arrangements of strain features. In this paper, we report the formation of widespread and controlled buckling delamination of monolayer graphene deposited on hexagonal boron-nitride promoted by a significant squeezing of the graphene flake and induced by polymeric micro-actuators. The flexibility of this method offers a promising technique to create arbitrary buckling geometries and arrays of wrinkles which could also be subjected to iterative folding-unfolding cycles. Further development of this method could pave the way to tune the properties of several kinds of other two-dimensional materials, such as transition metal dichalcogenides, by tailoring their surface topography.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photoluminescence spectroscopies. Transconductance curves of MoS2 are compared with the current-voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. Based on ab-initio modeling, the effect is understood in terms of trapping by sulfur vacancies, which counter-intuitively depends on the field-effect, even though the graphene contact layer is positioned between the backgate and the MoS2 channel.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electron localization in periodically strained graphene

Pseudo-magnetic field (PMF) in deformed graphene has been proposed as a promising and flexible method to quantum-confine electronic states and create gaps in the local density of states. Motivated by this perspective, we numerically analyze various different configurations leading to electronic localization and band flattening in periodically strained graphene. In particular, we highlight the existence of a fine structure in the pseudo-Landau levels confined in large-PMF regions, the emergence of states confined to PMF nodes as well as of snake-like orbits. In our paper, we further analyze the importance of the relative rotation and asymmetry of the strain lattice with respect to the atomic lattice and show how it can be used to modulate the PMF periodicity and to create localized orbits far from the strain points. Possible implementations and applications of the simulated structures are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron cooling with graphene-insulator-superconductor tunnel junctions and applications to fast bolometry

Electronic cooling in hybrid normal metal-insulator-superconductor junctions is a promising technology for the manipulation of thermal loads in solid state nanosystems. One of the main bottlenecks for efficient electronic cooling is the electron-phonon coupling, as it represents a thermal leakage channel to the phonon bath. Graphene is a two-dimensional material that exhibits a weaker electron-phonon coupling compared to standard metals. For this reason, we study the electron cooling in graphene-based systems consisting of a graphene sheet contacted by two insulator/superconductor junctions. We show that, by properly biasing the graphene, its electronic temperature can reach base values lower than those achieved in similar systems based on metallic ultra-thin films. Moreover, the lower electron-phonon coupling is mirrored in a lower heat power pumped into the superconducting leads, thus avoiding their overheating and preserving the cooling mechanisms. Finally, we analyze the possible application of cooled graphene as a bolometric radiation sensor. We study its main figures of merit, i.e. responsivity, noise equivalent power and response time. In particular, we show that the built-in electron refrigeration allows reaching a responsivity of the order of 50 nA/pW and a noise equivalent power of order of $\rm 10^{-18}\, W\, Hz^{-1/2}$ while the response speed is about 10 ns, corresponding to a thermal bandwidth in the order of 20MHz.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Programmable quantum Hall bisector: towards a novel resistance standard for quantum metrology

We demonstrate a programmable quantum Hall circuit that implements a novel iterative voltage bisection scheme and allows obtaining any binary fraction $(k/2^n)$ of the fundamental resistance quantum $R_K/2=h/2e^2$. The circuit requires a number $n$ of bisection stages that only scales logarithmically with the precision of the fraction. The value of $k$ can be set to any integer between 1 and $2^n$ by proper gate configuration. The architecture exploits gate-controlled routing, mixing and equilibration of edge modes of robust quantum Hall states. The device does not contain {\em any} internal ohmic contact potentially leading to spurious voltage drops. Our scheme addresses key critical aspects of quantum Hall arrays of resistance standards, which are today widely studied and used to create custom calibration resistances. The approach is demonstrated in a proof-of-principle two-stage bisection circuit built on a high-mobility GaAs/AlGaAs heterostructure operating at a temperature of $260\,{\rm mK}$ and a magnetic field of $4.1\,{\rm T}$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strategy for accurate thermal biasing at the nanoscale

We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing technique in InAs nanowire based devices, that a nanoscale metallic constriction on a SiO2 substrate acts like a diffusive conductor with negligible electron-phonon relaxation and non-ideal leads. The non-universal impact of the leads on the achieved thermal bias -- which depends on their dimensions, shape and material composition -- is hard to minimize, but is possible to accurately calibrate in a properly designed nano-device. Our results allow to reduce the issue of the thermal bias calibration to the knowledge of the heater resistance and pave the way for accurate thermoelectric or similar measurements at the nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Anisotropic straining of graphene using micropatterned SiN membranes

We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load $ΔP$ over elliptical regions of free-standing graphene yields measurable deviations from hydrostatic strain conventionally observed in radially-symmetric microbubbles. The top hydrostatic strain $\bar{\varepsilon}$ we observe is estimated to be $\approx0.7\%$ for $ΔP = 1\,{\rm bar}$ in graphene clamped to elliptical SiN holes with axis $40$ and $20\,{\rm μm}$. In the same configuration, we report a $G_\pm$ splitting of $10\,{\rm cm^{-1}}$ which is in good agreement with the calculated anisotropy $Δ\varepsilon \approx 0.6\%$ for our device geometry. Our results are consistent with the most recent reports on the Grüneisen parameters. Perspectives for the achievement of arbitrary strain configurations by designing suitable SiN holes and boundary clamping conditions are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts

Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale single-crystal monolayer graphene grown by chemical vapor deposition. The control of the edge trajectories is demonstrated by the observation of various fractional quantum resistances, as a result of a controllable inter-edge scattering. Experimental data are successfully modeled both numerically and within the Landauer-Buettiker formalism. Our architecture is particularly promising and unique in view of the investigation of quantum transport via scanning probe microscopy, since graphene constitutes the topmost layer of the device. For this reason, it can be approached and perturbed by a scanning probe down to the limit of mechanical contact.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low-temperature quantum transport in CVD-grown single crystal graphene

Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall reactor and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the measured single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples is located at back-gate voltages of less than 10V, and their mobility can reach 11000 cm2/Vs. More than 12 flat and discernible half-integer quantum Hall plateaus have been observed in high magnetic field on both the electron and hole side of the Dirac point. At low magnetic field, the magnetoresistance shows a clear weak localization peak. Using the theory of McCann et al., we find that the inelastic scattering length is larger than 1 μm in these samples even at the charge neutrality point.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis

We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis that allows to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence disorder and the orientation of the Rashba vector. The relevance of this approach in view of the implementation of Josephson junctions based on High-Temperature Superconductors is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanoscale Mach-Zehnder interferometer with spin-resolved quantum Hall edge states

We realize a nanoscale-area Mach-Zehnder interferometer with co-propagating quantum Hall spin-resolved edge states and demonstrate the persistence of gate-controlled quantum interference oscillations, as a function of an applied magnetic field, at relatively large temperatures. Arrays of top-gate magnetic nanofingers are used to induce a resonant charge transfer between the pair of spin-resolved edge states. To account for the pattern of oscillations measured as a function of magnetic field and gate voltage, we have developed a simple theoretical model which satisfactorily reproduces the data.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanoscale spin rectifiers controlled by the Stark effect

The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double quantum dots (DQDs) enable advanced single-spin operations that would be available even for room-temperature applications for sufficiently small devices. To date, however, spin operations in DQDs were observed at sub-Kelvin temperatures, a key reason being that scaling a DQD system while retaining an independent field-effect control on the individual dots is very challenging. Here we show that quantum-confined Stark effect allows an independent addressing of two dots only 5 nm apart with no need for aligned nanometer-size local gating. We thus demonstrate a scalable method to fully control a DQD device, regardless of its physical size. In the present implementation we show InAs/InP nanowire (NW) DQDs that display an experimentally detectable SB up to 10 K. We also report and discuss an unexpected re-entrant SB lifting as a function magnetic-field intensity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene

The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large thermal biasing of individual gated nanostructures

We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Scanning Gate Imaging of quantum point contacts and the origin of the 0.7 Anomaly

The origin of the anomalous transport feature appearing at conductance G \approx 0.7 x (2e2/h) in quasi-1D ballistic devices - the so-called 0.7 anomaly - represents a long standing puzzle. Several mechanisms were proposed to explain it, but a general consensus has not been achieved. Proposed explanations are based on quantum interference, Kondo effect, Wigner crystallization, and more. A key open issue is whether point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-1D constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Giant thermovoltage in single InAs-nanowire field-effect transistors

Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between room temperature and 100K$. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tuning of quantum interference in top-gated graphene on SiC

We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and charge density. We perform a systematic study of the quantum corrections to the magnetoresistance due to quantum interference of quasiparticles and electron-electron interaction. We analyze the contribution of the different scattering mechanisms affecting the magnetotransport in the $-2.0 \times 10^{10}$ cm$^{-2}$ to $3.75 \times 10^{11}$ cm$^{-2}$ density region and find a significant influence of the charge density on the intravalley scattering time. Furthermore, we observe a modulation of the electron-electron interaction with charge density not accounted for by present theory. Our results clarify the role of quantum transport in SiC-based devices, which will be relevant in the development of a graphene-based technology for coherent electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coherent edge mixing and interferometry in quantum Hall bilayers

We discuss the implementation of a beam splitter for electron waves in a quantum Hall bilayer. Our architecture exploits inter-layer tunneling to mix edge states belonging to different layers. We discuss the basic working principle of the proposed coherent edge mixer, possible interferometric implementations based on existing semiconductor-heterojunction technologies, and advantages with respect to canonical quantum Hall interferometers based on quantum point contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Imaging backscattering through impurity-induced antidots in quantum Hall constrictions

We exploit the biased tip of a scanning gate microscope (SGM) to induce a controlled backscattering between counter-propagating edge channels in a wide constriction in the quantum Hall regime. We compare our detailed conductance maps with a numerical percolation model and demonstrate that conductance fluctuations observed in these devices as a function of the gate voltage originate from backscattering events mediated by localized states pinned by potential fluctuations. Our imaging technique allows us to identify the necessary conditions for the activation of these backscattering processes and also to reconstruct the constriction confinement potential profile and the underlying disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Imaging fractional incompressible stripes in integer quantum Hall systems

Transport experiments provide conflicting evidence on the possible existence of fractional order within integer quantum Hall systems. In fact integer edge states sometimes behave as monolithic objects with no inner structure, while other experiments clearly highlight the role of fractional substructures. Recently developed low-temperature scanning probe techniques offer today an opportunity for a deeper-than-ever investigation of spatial features of such edge systems. Here we use scanning gate microscopy and demonstrate that fractional features were unambiguously observed in every integer quantum Hall constriction studied. We present also an experimental estimate of the width of the fractional incompressible stripes corresponding to filling factors 1/3, 2/5, 3/5, and 2/3. Our results compare well with predictions of the edge-reconstruction theory.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Controlled coupling of spin-resolved quantum Hall edge states

Topologically-protected edge states are dissipationless conducting surface states immune to impurity scattering and geometrical defects that occur in electronic systems characterized by a bulk insulating gap. One example can be found in a two-dimensional electron gas (2DEG) under high magnetic field in the quantum Hall regime. Based on the coherent control of the coupling between these protected states, several theoretical proposals for the implementation of information processing architectures were proposed. Here we introduce and experimentally demonstrate a new method that allows us to controllably couple co-propagating spin-resolved edge states of a QH insulator. The scheme exploits a spatially-periodic in-plane magnetic field that is created by an array of Cobalt nano-magnets placed at the boundary of the 2DEG. A maximum charge/spin transfer of about 28% is achieved at 250 mK. This result may open the way to the realization of scalable quantum-information architectures exploiting the spin degree of freedom of topologically-protected states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Impact of electron heating on the equilibration between quantum Hall edge channels

When two separately contacted quantum Hall (QH) edge channels are brought into interaction, they can equilibrate their imbalance via scattering processes. In the present work we use a tunable QH circuit to implement a junction between co-propagating edge channels whose length can be controlled with continuity. Such a variable device allows us to investigate how current-voltage characteristics evolve when the junction length d is changed. Recent experiments with fixed geometry reported a significant reduction of the threshold voltage for the onset of photon emission, whose origin is still under debate. Our spatially resolved measurements reveal that this threshold shift depends on the junction length. We discuss this unexpected result on the basis of a model which demonstrates that a heating of electrons is the dominant process responsible for the observed reduction of the threshold voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Self-assembly and electron-beam-induced direct etching of suspended graphene nanostructures

We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their residue-free deposition on a silicon dioxide substrate. This deposition system creates a blistered graphene surface due to strain induced by the transfer process itself. Single-layer-graphene deposition and its "blistering" on the substrate are demonstrated by a combination of Raman spectroscopy, scanning electron microscopy and atomic-force microscopy measurements. Finally, we demonstrate that blister-like suspended graphene are self-supporting single-layer structures and can be flattened by employing a spatially-resolved direct-lithography technique based on electron-beam induced etching.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spatially-resolved analysis of edge-channel equilibration in quantum Hall circuits

We demonstrate an innovative quantum Hall circuit with variable geometry employing the moveable electrostatic potential induced by a biased atomic force microscope tip. We exploit this additional degree of freedom to identify the microscopic mechanisms that allow two co-propagating edge channels to equilibrate their charge imbalance. Experimental results are compared with tight-binding simulations based on a realistic model for the disorder potential. This work provides also an experimental realization of a beam mixer between co-propagating edge channels, a still elusive building block of a recently proposed new class of quantum interferometers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Hybrid InAs nanowire-vanadium proximity SQUID

We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) based on InAs nanowires and vanadium superconducting electrodes. These mesoscopic devices are found to be extremely robust against thermal cycling and to operate up to temperatures of $\sim2.5$~K with reduced power dissipation. We show that our geometry allows to obtain nearly-symmetric devices with very large magnetic-field modulation of the critical current. All these properties make these devices attractive for on-chip quantum-circuit implementation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots

We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong electric dipole moment on the dot and demonstrate the controlled modification of its electronic orbitals. Our approach allows us to dramatically enhance the single-particle energy spacing between the first two quantum levels in the dot and thus to increment the working temperature of our InAs/InP single-electron transistors. Our devices display a very robust modulation of the conductance even at liquid nitrogen temperature, while allowing an ultimate control of the electron filling down to the last free carrier. Potential further applications of the technique to time-resolved spin manipulation are also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Tuning non-linear charge transport between integer and fractional quantum Hall states

Controllable point junctions between different quantum Hall phases are a necessary building block for the development of mesoscopic circuits based on fractionally-charged quasiparticles. We demonstrate how particle-hole duality can be exploited to realize such point-contact junctions. We show an implementation for the case filling factors $ν=1$ and $ν^*\le1$ in which both the fractional filling $ν^*$ and the coupling strength can be finely and independently tuned. A peculiar crossover from insulating to conducting behavior as $ν^*$ goes from 1/3 to 1 is observed. These results highlight the key role played on inter-edge tunneling by local charge depletion at the point contact.

0 citations0 reviewsNo code linkedOpen access