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V. Senz

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cond-mat cond-mat.dis-nn cond-mat.str-el

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preprint2001arXiv

Analysis of the resistance in p-SiGe over a wide temperature range

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate $1/\td(E,T)$, each dominating in a limited temperature range.

preprint2001arXiv

Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

We study the resistivity vs. electric field dependence $ρ(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $ρ$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$ , we find that the $ρ(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same $T_e$ values. Thus the $ρ(E)$ dependence and the $E$ -field ``scaling'' do not provide additional evidence for a quantum phase transition (QPT). We discuss how to study, in general, true $E$ -field scaling and extract the ratio of the QPT characteristic lengths.

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