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Researcher profile

T. Ihn

T. Ihn contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-el

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Published work

21 published item(s)

preprint2021arXiv

Spin-Selective Equilibration among Integer Quantum Hall Edge Channels

The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with lower electron temperatures call for a further exploration of the topic. We develop a framework to systematically measure and analyze the equilibration of many (up to 8) integer edge modes. Our results show that spin-selective coupling dominates even for non-neighboring channels with parallel spin. Changes in magnetic field and bulk density let us control the equilibration until it is almost completely suppressed and dominated only by individual microscopic scatterers. This method could serve as a guideline to investigate and design improved devices, and to study fractional and other exotic states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electron flow in split-gated bilayer graphene

We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by electrostatic gating. By comparing the transconductance data recorded for different top gate geometries - continuous barrier and split-gate - the observed transport features for the split-gate can be attributed to interference effects inside the narrow opening.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High-frequency gate manipulation of a bilayer graphene quantum dot

We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Irreversibility on the Level of Single-Electron Tunneling

We present a low-temperature experimental test of the fluctuation theorem for electron transport through a double quantum dot. The rare entropy-consuming system trajectories are detected in the form of single charges flowing against the source-drain bias by using time-resolved charge detection with a quantum point contact. We find that these trajectories appear with a frequency that agrees with the theoretical predictions even under strong nonequilibrium conditions, when the finite bandwidth of the charge detection is taken into account.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Optimization of sample-chip design for stub-matched radio-frequency reflectometry measurements

A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are integrated in a 2-4 GHz stub-matching circuit consisting of a waveguide stub shunted to the terminated coplanar waveguide. Several quantum point contacts fabricated on a GaAs/AlGaAs heterostructure with different chip designs are compared. We show that the change of the reflection coefficient for a fixed change in the quantum point contact conductance can be enhanced by a factor of 3 compared to conventional designs by a suitable electrode geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum dot admittance probed at microwave frequencies with an on-chip resonator

We present microwave frequency measurements of the dynamic admittance of a quantum dot tunnel coupled to a two-dimensional electron gas. The measurements are made via a high-quality 6.75 GHz on-chip resonator capacitively coupled to the dot. The resonator frequency is found to shift both down and up close to conductance resonance of the dot corresponding to a change of sign of the reactance of the system from capacitive to inductive. The observations are consistent with a scattering matrix model. The sign of the reactance depends on the detuning of the dot from conductance resonance and on the magnitude of the tunnel rate to the lead with respect to the resonator frequency. Inductive response is observed on a conductance resonance, when tunnel coupling and temperature are sufficiently small compared to the resonator frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum dot occupation and electron dwell time in the cotunneling regime

We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near equilibrium, charge and conductance signals are found to be proportional to each other. We conclude that in this regime, the two signals give equivalent information about the quantum dot system. Out of equilibrium, we study the inelastic-cotunneling regime. We compare the measured differential dot charge with an estimate assuming a dwell time of transmitted carriers on the dot given by h/E, where E is the blockade energy of first-order tunneling. The measured signal is of a similar magnitude as the estimate, compatible with a picture of cotunneling as transmission through a virtual intermediate state with a short lifetime.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transport in a three-terminal graphene quantum dot in the multi-level regime

We investigate transport in a three-terminal graphene quantum dot. All nine elements of the conductance matrix have been independently measured. In the Coulomb blockade regime accurate measurements of individual conductance resonances reveal slightly different resonance energies depending on which pair of leads is used for probing. Rapid changes in the tunneling coupling between the leads and the dot due to localized states in the constrictions has been excluded by tuning the difference in resonance energies using in-plane gates which couple preferentially to individual constrictions. The interpretation of the different resonance energies is then based on the presence of a number of levels in the dot with an energy spacing of the order of the measurement temperature. In this multi-level transport regime the three-terminal device offers the opportunity to sense if the individual levels couple with different strengths to the different leads. This in turn gives qualitative insight into the spatial profile of the corresponding quantum dot wave functions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Characterization of a microwave frequency resonator via a nearby quantum dot

We present measurements of a hybrid system consisting of a microwave transmission-line resonator and a lateral quantum dot defined on a GaAs heterostructure. The two subsystems are separately characterized and their interaction is studied by monitoring the electrical conductance through the quantum dot. The presence of a strong microwave field in the resonator is found to reduce the resonant conductance through the quantum dot, and is attributed to electron heating and modulation of the dot potential. We use this interaction to demonstrate a measurement of the resonator transmission spectrum using the quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coulomb Gap in Graphene Nanoribbons

We investigate the density and temperature-dependent conductance of graphene nanoribbons with varying aspect ratio. Transport is dominated by a chain of quantum dots forming spontaneously due to disorder. Depending on ribbon length, electron density, and temperature, single or multiple quan- tum dots dominate the conductance. Between conductance resonances cotunneling transport at the lowest temperatures turns into activated transport at higher temperatures. The density-dependent activation energy resembles the Coulomb gap in a quantitative manner. Individual resonances show signatures of multi-level transport in some regimes, and stochastic Coulomb blockade in others.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Imaging the lateral shift of a quantum-point contact using scanning-gate microscopy

We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Time-resolved charge detection in graphene quantum dots

We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a non-monotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above 2 mV results in an increase of the dot-lead transition rate related to back-action of the charge detector current on the dot.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transport Properties of Clean Quantum Point Contacts

Quantum point contacts are fundamental building blocks for mesoscopic transport experiments and play an important role in recent interference- and fractional quantum Hall experiments. However, it is not clear how electron-electron interactions and the random disorder potential influence the confinement potential and give rise to phenomena like the mysterious 0.7 anomaly. Novel growth techniques of GaAs/AlGaAs heterostructures for high-mobility two-dimensional electron gases enable us to investigate quantum point contacts with a strongly suppressed disorder potential. These clean quantum point contacts indeed show transport features that are obscured by disorder in standard samples. From this transport data, we are able to extract the parameters of the confinement potential which describe its shape in longitudinal and transverse direction. Knowing the shape (and hence the slope) of the confinement potential might be crucial to predict which interaction-induced states can form in quantum point contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field

We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island from source and drain graphene contacts. Lateral graphene gates are used to electrostatically tune the device. Measurements of Coulomb resonances, including constriction resonances and Coulomb diamonds prove the functionality of the graphene quantum dot with a charging energy of around 4.5 meV. We show the evolution of Coulomb resonances as a function of perpendicular magnetic field, which provides indications of the formation of the graphene specific 0th Landau level. Finally, we demonstrate that the complex pattern superimposing the quantum dot energy spectra is due to the formation of additional localized states with increasing magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Evidence for localization and 0.7 anomaly in hole quantum point contacts

Quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy measurements. Besides one-dimensional conductance quantization in units of $2e^{2}/h$ a pronounced extra plateau is found at about $0.7(2e^{2}/h)$ which possesses the characteristic properties of the so-called "0.7 anomaly" known from experiments with n-type samples. The evolution of the 0.7 plateau in high perpendicular magnetic field reveals the existence of a quasi-localized state and supports the explanation of the 0.7 anomaly based on self-consistent charge localization. These observations are robust when lateral electrical fields are applied which shift the relative position of the electron wavefunction in the quantum point contact, testifying to the intrinsic nature of the underlying physics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample configurations can be set in situ with mobilities diering by a factor of more than two in a wide range of densities. This observation is discussed in view of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Highly Tunable Hybrid Quantum Dots with Charge Detection

In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local Schottky-gates, these criteria are nicely fulfilled in the resulting hybrid device. To this end, a quantum dot with adjacent charge detector is defined. After tuning the quantum dot to contain only a single electron, we are able to observe the charge detector signal of the quantum dot state for a wide range of tunnel couplings.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum capacitance and density of states of graphene

We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin States in Graphene Quantum Dots

We investigate ground and excited state transport through small (d = 70 nm) graphene quantum dots. The successive spin filling of orbital states is detected by measuring the ground state energy as a function of a magnetic field. For a magnetic field in-plane of the quantum dot the Zemann splitting of spin states is measured. The results are compatible with a g-factor of 2 and we detect a spin-filling sequence for a series of states which is reasonable given the strength of exchange interaction effects expected for graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Imaging a Coupled Quantum Dot - Quantum Point Contact System

We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for charges on the dot or nearby. It allowed us to distinguish single electron charging events in several charge traps from charging events on the dot. We analyzed the tip-induced potential quantitatively and found its shape to be independent of the voltage applied to the tip within a certain range of parameters. We estimate that the trap density is below 0.1% of the doping density and that the interaction energy between the quantum dot and a trap is a significant portion of the dot's charging energy. Possibly, such charge traps are the reason for frequently observed parametric charge rearrangements.

0 citations0 reviewsNo code linkedOpen access