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Source author record

D. Grützmacher

D. Grützmacher appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-matcond-mat.dis-nncond-mat.str-elphysics.optics

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Published work

13 published item(s)

preprint2022arXiv

Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures

We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Efficient, Spectrally Tunable Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars

Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as a highly efficient solid-state single-photon source operating at cryogenic temperatures. We show that single photons are generated due to the radiative recombination of excitons bound to neutral Cl atoms in ZnSe QW and the energy of the emitted photon can be tuned from about 2.85 down to 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following the developed advanced technology we fabricate NPs with a diameter of about 250 nm using a combination of dry and wet-chemical etching of epitaxially grown ZnSe/ZnMgSe QW well structures. The remaining resist mask serves as a spherical- or cylindrical-shaped solid immersion lens on top of NPs and leads to the emission intensity enhancement by up to an order of magnitude in comparison to the pillars without any lenses. NPs with spherical-shaped lenses show the highest emission intensity values. The clear photon-antibunching effect is confirmed by the measured value of the second-order correlation function at a zero time delay of 0.14. The developed single-photon sources are suitable for integration into scalable photonic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires

Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--Poisson solver revealed that the ambipolar characteristics originate from a Fermi level dependent occupation of hole and electron states within the approximately circular quantum well formed in the InSb shell. By applying a perpendicular magnetic field with respect to the nanowire axis, conductance fluctuations were observed, which are used to extract the phase-coherence length. By averaging the magneto-conductance traces at different back-gate voltages, weak antilocalization features are resolved. Regular flux-periodic conductance oscillations are measured when an axial magnetic field is applied. These oscillations are attributed to closed-loop quantized states located in the InSb shell which shift their energetic position periodically with the magnetic flux. Possible reasons for experimentally observed variations in the oscillation patterns are discussed using simulation results.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers

Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.

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preprint2015arXiv

Coherent ultrafast spin-dynamics probed in three dimensional topological insulators

Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the spin properties in topological insulators are based on the coupling of spin- and orbit interaction connected to its momentum. Specific ways to control the spin-polarization with light have been demonstrated: the energy momentum landscape of the Dirac cone provides spin-momentum locking of the charge current and its spin. The directionality of spin and momentum, as well as control with light has been demonstrated. Here we demonstrate a coherent femtosecond control of spin-polarization for states in the valence band at around the Dirac cone.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators

We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators

We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

On the nature of the spin polarization limit in the warped Dirac cone of the Bi2Te3

The magnitude of electron spin polarization in topologically protected surface states is an important parameter with respect to spintronics applications. In order to analyze the warped spin texture in Bi$_2$Te$_3$ thin films, we combine angle- and spin-resolved photoemission experiments with theoretical \textit{ab initio} calculations. We find an \textit{in-plane} spin polarization of up to $\sim$~45\% in the topologically protected Dirac cone states near the Fermi level. The Fermi surface of the Dirac cone state is warped and shows an \textit{out-of-plane} spin polarization of $\sim$~15\%. These findings are in quantitative agreement with dedicated simulations which find electron density of the Dirac cone delocalized over the first quintuple layer with spin reversal occurring in the surface atomic layer.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin-orbit coupling and phase-coherence in InAs nanowires

We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation of the magnetic field or the back-gate voltage are observed, which are attributed to electron interference effects in small disordered conductors. From the correlation field of the magnetoconductance fluctuations the phase-coherence length l_phi is determined. At the lowest temperatures l_phi is found to be at least 300 nm, while for temperatures exceeding 2 K a monotonous decrease of l_phi with temperature is observed. A direct observation of the weak antilocalization effect indicating the presence of spin-orbit coupling is masked by the strong magnetoconductance fluctuations. However, by averaging the magnetoconductance over a range of gate voltages a clear peak in the magnetoconductance due to the weak antilocalization effect was resolved. By comparison of the experimental data to simulations based on a recursive two-dimensional Green's function approach a spin-orbit scattering length of approximately 70 nm was extracted, indicating the presence of strong spin-orbit coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and functional device with a TiN+Al gate stack and source, gate, and drain contacts in place. The strain fields in the Si channel were explored using an x-ray beam focused to 400 nm diameter combined with finite element simulations. A maximum in-plane tensile strain of about 1% in the Si channel was found, which is by a factor of three to four higher than achievable for dislocation-free tensile strained Si in state-of-the-art devices.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers

We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnelling through the first light hole state. This demonstrates for the first time the conservation of the total angular momentum in valence band resonant tunnelling. It is also shown that conduction through light hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Analysis of the resistance in p-SiGe over a wide temperature range

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate $1/\td(E,T)$, each dominating in a limited temperature range.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

We study the resistivity vs. electric field dependence $ρ(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $ρ$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $ρ(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same $T_e$ values. Thus the $ρ(E)$ dependence and the $E$-field ``scaling'' do not provide additional evidence for a quantum phase transition (QPT). We discuss how to study, in general, true $E$-field scaling and extract the ratio of the QPT characteristic lengths.

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