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Researcher profile

V. N. Strocov

V. N. Strocov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.othercond-mat.str-elcond-mat.supr-con

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Published work

5 published item(s)

preprint2022arXiv

Are high-energy photoemission final states free-electron-like?

Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the photoemission final states. Our soft-X-ray ARPES data on Ag metal reveals, however, that even at high excitation energies the final states can be a way more complex, incorporating several Bloch waves with different out-of-plane momenta. Such multiband final states manifest themselves as a complex structure and excessive broadening of the spectral peaks from 3D electron states. We analyse the origins of this phenomenon, and trace it to other materials such as Si and GaN. Our findings are essential for accurate determination of the 3D band structure over a wide range of materials and excitation energies in the ARPES experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Evolution of the SrTiO$_3$ surface electronic state as a function of LaAlO$_3$ overlayer thickness

The novel electronic properties emerging at interfaces between transition metal oxides, and in particular the discovery of conductivity in heterostructures composed of LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) band insulators, have generated new challenges and opportunities in condensed matter physics. Although the interface conductivity is stabilized when LAO matches or exceeds a critical thickness of 4 unit cells (u.c.), other phenomena such as a universal metallic state found on the bare surface of STO single crystals and persistent photon-triggered conductivity in otherwise insulating STO-based interfaces raise important questions about the role of the LAO overlayer and the possible relations between vacuum/STO and LAO/STO interfaces. Here, we study how the metallic STO surface state evolves using angle-resolved photoemission spectroscopy (ARPES) in situ prepared samples complemented by resonant inelastic X-ray scattering (RIXS) during the growth of a crystalline LAO overlayer. In all the studied samples, the character of the conduction bands, their carrier densities, the Ti3+ crystal field, and the response to photon irradiation bear strong similarities. Nevertheless, we report here that studied LAO/STO interfaces exhibit an instability toward an apparent 2 x 1 folding of the Fermi surface at and above 4 u.c. thickness threshold, which distinguishes these heterostructures from bare STO and sub-critical-thickness LAO/STO.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Giant Chern number of a Weyl nodal surface without upper limit

Weyl nodes can be classified into zero-dimensional (0D) Weyl points (WPs), 1D Weyl nodal lines (WNL) and 2D Weyl nodal surfaces (WNS), which possess finite Chern numbers. Up to date, the largest Chern number of WPs identified in Weyl semimetals is 4, which is thought to be a maximal value for linearly crossing points in solids. On the other hand, whether the Chern numbers of nonzero-dimensional linear crossing Weyl nodal objects have one upper limit is still an open question. In this work, combining angle-resolved photoemission spectroscopy with density functional theory calculations, we show that the chiral crystal AlPt hosts a cube-shaped charged Weyl nodal surface which is formed by the linear crossings of two singly-degenerate bands. Different to conventional Weyl nodes, the cube-shaped nodal surface in AlPt is enforced by nonsymmorphic chiral symmetries and time reversal symmetry rather than accidental band crossings, and it possesses a giant Chern number |C| = 26. Moreover, our results and analysis prove that there is no upper limit for the Chern numbers of such kind 2D Weyl nodal object.

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preprint2022arXiv

Probing the interlayer coupling in 2$H$-NbS$_2$ via soft x-ray angle-resolved photoemission spectroscopy

In the large family of two-dimensional (2D) layered materials including graphene, its honeycomb analogs, and transition-metal dichalcogenides, the interlayer coupling plays a rather intriguing role. On the one hand, the weak van der Waals interaction that holds the layers together endows these compounds with quasi-2D properties, which might imply small interlayer effects on the electronically active bands. On the other hand, the oft-witnessed differences in electronic, optical, and magnetic behaviors of monolayers, bilayers, and multilayers of the same compound must have as their microscopic origin the detailed interlayer hopping parameters. Given the few experimental reports that have attempted to explicitly extract these parameters, we employ soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to probe the interlayer coupling in superconducting 2$H$-NbS$_2$. We visualize the S 3$p_z$ bands that disperse with respect to the out-of-plane momentum and introduce a simple tight-binding model to extract the interlayer hopping parameters. From first-principles calculations, we clarify how atomic distances and the proper accounting for screening via hybrid functionals influence these bands. The knowledge of interlayer hopping parameters is particularly pertinent in NbS$_2$, where recent experiments have uncovered fingerprints of finite-momentum superconductivity in the bulk material and heterostructures.

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preprint2019arXiv

Electronic structure of a graphene-like artificial crystal of $NdNiO_3$

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Angstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of $NdNiO_3$ confined between two 4-unit cell-thick layers of insulating $LaAlO_3$. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.

0 citations0 reviewsNo code linkedOpen access