Researcher profile

V. Madhavan

V. Madhavan contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2012arXiv

One-dimensional channel for Dirac electrons in a 3D topological insulator

Topological insulators represent a new state of matter where the topological nature of the bulk bands dictates the existence of a surface state with unique properties. These materials are predicted to host exotic states such as Majorana Fermions and 1D chiral modes, many of which require a delicate tuning of the surface state properties near the Dirac point. Using scanning tunneling microscopy (STM) on the prototypical topological insulator Bi2Te3, we have discovered one-dimensional topographic stripes which induce spatially modulated changes in the electronic structure. Direct magnetic field measurements reveal a striped pattern of Landau level energies, which can be used to realize spatial regions with alternating filling fractions. When the chemical potential is properly tuned, the observed modulation would dictate the existence of topological 1D chiral modes at the boundaries between the stripes, and provide a platform for the experimental realization of 1D dissipationless quantum wires in topological insulators. Our discovery that the surface state dispersion is modulated over nanometer length scales by an intrinsic topographic route represents a new paradigm for controlling the properties of Dirac electrons.

preprint2011arXiv

Electron-Spin Excitation Coupling in an Electron Doped Copper Oxide Superconductor

High-temperature (high-Tc) superconductivity in the copper oxides arises from electron or hole doping of their antiferromagnetic (AF) insulating parent compounds. The evolution of the AF phase with doping and its spatial coexistence with superconductivity are governed by the nature of charge and spin correlations and provide clues to the mechanism of high-Tc superconductivity. Here we use a combined neutron scattering and scanning tunneling spectroscopy (STS) to study the Tc evolution of electron-doped superconducting Pr0.88LaCe0.12CuO4-delta obtained through the oxygen annealing process. We find that spin excitations detected by neutron scattering have two distinct modes that evolve with Tc in a remarkably similar fashion to the electron tunneling modes in STS. These results demonstrate that antiferromagnetism and superconductivity compete locally and coexist spatially on nanometer length scales, and the dominant electron-boson coupling at low energies originates from the electron-spin excitations.

preprint2010arXiv

Observation of novel interference patterns in Bi2-xFexTe3+d by Fourier transform scanning tunneling spectroscopy

In topological insulators (TI), strong spin-orbit coupling results in non-trivial scattering processes of the surface states, whose effects include suppressed back scattering1, 2, 3, 4 weak anti-localization5, 6 and the possibility of an exotic Kondo effect that mimics graphene7. Introducing time reversal breaking perturbations and establishing long-range magnetic order has been theorized to lead to the formation of quantized magnetoelectric phenomena8, fractionalized charge excitations, and the appearance of quantum wire states9. A key, elusive, step in exploring these and other novel electronic phases is the experimental observation of charge backscattering due to spin-flip processes at the surface of a magnetically-doped TI. Here we utilize Fourier transform scanning tunneling spectroscopy (FT-STS) to probe the surface of a magnetically doped TI, Bi2-xFexTe3+d. Our measurements show the appearance of a hitherto unobserved channel of electronic backscattering along surface q-vector Γκ. By combining FT-STS with angle-resolved photoemission data, we identify the momentum space origins of the observed q-vectors, which on comparison to a model calculation are enhanced by spin-flip scattering. Our findings present compelling evidence for the first spatial and momentum resolved measurements of magnetic impurity induced backscattering in a prototypical TI.