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Researcher profile

Yoshinori Okada

Yoshinori Okada contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

11 published item(s)

preprint2026arXiv

Spin Hall effect in van der Waals ferromagnet Fe$_{5}$GeTe$_{2}$

We investigate the spin Hall effect (SHE) in a van der Waals (vdW) ferromagnet Fe$_{5}$GeTe$_{2}$ (FGT) with a Curie temperature $T_{\rm C}$ of 310 K utilizing the spin-torque ferromagnetic resonance method. In synchronization with the emergence of the ferromagnetic phase resulting in the anomalous Hall effect (AHE), a noticeable enhancement in the SHE was observed below $T_{\rm C}$. On the other hand, the SHE shows a different temperature dependence from the AHE: the effective spin Hall conductivity is clearly enhanced with decreasing temperature unlike the anomalous Hall conductivity, reflecting the variation of band-structure accompanied by the complicated magnetic ordering of the FGT. The results provide a deep understanding of the SHE in magnetic materials to open a new route for novel functionalities in vdW materials-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films

We have performed magnetotransport measurements in CeTe$_{3}$ thin films down to $0.2~{\rm K}$. It is known that CeTe$_{3}$ has two magnetic transitions at $T_{\rm N1} \approx 3~{\rm K}$ and $T_{\rm N2} \approx 1~{\rm K}$. A clear Shubnikov-de-Haas (SdH) oscillation was observed at $4~{\rm K}$, demonstrating the strong two-dimensional nature in this material. Below $T_{\rm N2}$, the SdH oscillation has two frequencies, indicating that the Fermi surface could be slightly modulated due to the second magnetic transition. We also observed a magnetic hysteresis in the SdH oscillation below $T_{\rm N1}$. Especially, there is a unique spike in the magnetoresistance at $B \approx 0.6~{\rm T}$ only when the magnetic field is swept from a high enough field (more than $2~{\rm T}$) to zero field.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanoscale Determination of the Mass Enhancement Factor in the Lightly-Doped Bulk Insulator Lead Selenide

Bismuth chalcogenides and lead telluride/selenide alloys exhibit exceptional thermoelectric properties which could be harnessed for power generation and device applications. Since phonons play a significant role in achieving these desired properties, quantifying the interaction between phonons and electrons, which is encoded in the Eliashberg function of a material, is of immense importance. However, its precise extraction has in part been limited due to the lack of local experimental probes. Here we construct a method to directly extract the Eliashberg function using Landau level spectroscopy, and demonstrate its applicability to lightly-doped thermoelectric bulk insulator PbSe. In addition to its high energy resolution only limited by thermal broadening, this novel experimental method could be used to detect variations in mass enhancement factor at the nanoscale. As such, it opens up a new pathway for investigating the effects of chemical defects, surface doping and strain on the mass enhancement factor.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Carrier localization and electronic phase separation in a doped spin-orbit driven Mott phase in Sr3(Ir1-xRux)2O7

Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.

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preprint2014arXiv

Dirac mass generation from crystal symmetry breaking on the surfaces of topological crystalline insulators

The tunability of topological surface states (SS) and controllable opening of the Dirac gap are of fundamental and practical interest in the field of topological materials. In topological crystalline insulators (TCIs), a spontaneously generated Dirac gap was recently observed, which was ascribed to broken cubic crystal symmetry. However, this structural distortion has not been directly observed so far, and the microscopic mechanism of Dirac gap opening via crystal symmetry breaking remains elusive. In this work, we present scanning tunneling microscopy (STM) measurements of a TCI Pb$_{1-x}$Sn$_x$Se for a wide range of alloy compositions spanning the topological and non-topological regimes. STM topographies directly reveal a symmetry-breaking distortion on the surface, which imparts mass to the otherwise massless Dirac electrons - a mechanism analogous to the long sought-after Higgs mechanism in particle physics. Remarkably, our measurements show that the Dirac gap scales with alloy composition, while the magnitude of the distortion remains nearly constant. Based on theoretical calculations, we find the Dirac mass is controlled by the composition-dependent SS penetration depth, which determines the weight of SS in the distorted region that is confined to the surface. Finally, we discover the existence of SS in the non-topological regime, which have the characteristics of gapped, double-branched Dirac fermions.

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preprint2013arXiv

Imaging the evolution of metallic states in a spin-orbit interaction driven correlated iridate

The Ruddlesden-Popper (RP) series of iridates (Srn+1IrnO3n+1) have been the subject of much recent attention due to the anticipation of emergent physics arising from the cooperative action of spin-orbit (SO) driven band splitting and Coulomb interactions[1-3]. However an ongoing debate over the role of correlations in the formation of the charge gap and a lack of understanding of the effects of doping on the low energy electronic structure have hindered experimental progress in realizing many of the predicted states[4-8] including possible high-Tc superconductivity[7,9]. Using scanning tunneling spectroscopy we map out the spatially resolved density of states in the n=2 RP member, Sr3Ir2O7 (Ir327). We show that the Ir327 parent compound, argued to exist only as a weakly correlated band insulator in fact possesses a substantial ~130meV charge excitation gap driven by an interplay between structure, SO coupling and correlations. A critical component in distinguishing the intrinsic electronic character within the inhomogeneous textured electronic structure is our identification of the signature of missing apical oxygen defects, which play a critical role in many of the layered oxides. Our measurements combined with insights from calculations reveal how apical oxygen vacancies transfer spectral weight from higher energies to the gap energies thereby revealing a path toward obtaining metallic electronic states from the parent-insulating states in the iridates.

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preprint2013arXiv

Mapping the unconventional orbital texture in topological crystalline insulators

The newly discovered topological crystalline insulators (TCIs) harbor a complex band structure involving multiple Dirac cones. These materials are potentially highly tunable by external electric field, temperature or strain and could find future applications in field-effect transistors, photodetectors, and nano-mechanical systems. Theoretically, it has been predicted that different Dirac cones, offset in energy and momentum-space, might harbor vastly different orbital character, a unique property which if experimentally realized, would present an ideal platform for accomplishing new spintronic devices. However, the orbital texture of the Dirac cones, which is of immense importance in determining a variety of materials properties, still remains elusive in TCIs. Here, we unveil the orbital texture in a prototypical TCI Pb$_{1-x}$Sn$_x$Se. By using Fourier-transform (FT) scanning tunneling spectroscopy (STS) we measure the interference patterns produced by the scattering of surface state electrons. We discover that the intensity and energy dependences of FTs show distinct characteristics, which can directly be attributed to orbital effects. Our experiments reveal the complex band topology involving two Lifshitz transitions and establish the orbital nature of the Dirac bands in this new class of topological materials, which could provide a different pathway towards future quantum applications.

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preprint2013arXiv

Observation of Dirac node formation and mass acquisition in a topological crystalline insulator

In the recently discovered topological crystalline insulators (TCIs), topology and crystal symmetry intertwine to create surface states with a unique set of characteristics. Among the theoretical predictions for TCIs is the possibility of imparting mass to the massless Dirac fermions by breaking crystal symmetry, as well as a Lifshitz transition with a change of Fermi surface topology. Here we report high resolution scanning tunneling microscopy studies of a TCI, Pb1-xSnxSe. We demonstrate the formation of zero mass Dirac fermions protected by crystal symmetry and the mechanism of mass generation via symmetry breaking, which constitute the defining characteristics of TCIs. In addition, we show two distinct regimes of fermiology separated by a Van-Hove singularity at the Lifshitz transition point. Our work paves the way for engineering the Dirac band gap and realizing interaction-driven topological quantum phenomena in TCIs.

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preprint2012arXiv

One-dimensional channel for Dirac electrons in a 3D topological insulator

Topological insulators represent a new state of matter where the topological nature of the bulk bands dictates the existence of a surface state with unique properties. These materials are predicted to host exotic states such as Majorana Fermions and 1D chiral modes, many of which require a delicate tuning of the surface state properties near the Dirac point. Using scanning tunneling microscopy (STM) on the prototypical topological insulator Bi2Te3, we have discovered one-dimensional topographic stripes which induce spatially modulated changes in the electronic structure. Direct magnetic field measurements reveal a striped pattern of Landau level energies, which can be used to realize spatial regions with alternating filling fractions. When the chemical potential is properly tuned, the observed modulation would dictate the existence of topological 1D chiral modes at the boundaries between the stripes, and provide a platform for the experimental realization of 1D dissipationless quantum wires in topological insulators. Our discovery that the surface state dispersion is modulated over nanometer length scales by an intrinsic topographic route represents a new paradigm for controlling the properties of Dirac electrons.

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preprint2012arXiv

Ripple modulated electronic structure of a 3D topological insulator

3D topological insulators, similar to the Dirac material graphene, host linearly dispersing states with unique properties and a strong potential for applications. A key, missing element in realizing some of the more exotic states in topological insulators is the ability to manipulate local electronic properties. Analogy with graphene suggests a possible avenue via a topographic route by the formation of superlattice structures such as a moiré patterns or ripples, which can induce controlled potential variations. However, while the charge and lattice degrees of freedom are intimately coupled in graphene, it is not clear a priori how a physical buckling or ripples might influence the electronic structure of topological insulators. Here we use Fourier transform scanning tunneling spectroscopy to determine the effects of a one-dimensional periodic buckling on the electronic properties of Bi2Te3. By tracking the spatial variations of the scattering vector of the interference patterns as well as features associated with bulk density of states, we show that the buckling creates a periodic potential modulation, which in turn modulates the surface and the bulk states. The strong correlation between the topographic ripples and electronic structure indicates that while doping alone is insufficient to create predetermined potential landscapes, creating ripples provides a path to controlling the potential seen by the Dirac electrons on a local scale. Such rippled features may be engineered by strain in thin films and may find use in future applications of topological insulators.

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preprint2012arXiv

Visualizing Landau levels of Dirac electrons in a one dimensional potential

Using scanning tunneling spectroscopy we have measured the response of Dirac electrons in a magnetic field to the presence of a well-defined smoothly varying 1D periodic potential. We find that the lower index Landau level energies reliably trace the potential variations, while the higher index levels appear surprisingly homogeneous. Modeling the effects of the periodic potential on the Landau level spectra, we show that the Landau level behavior encodes information on the spatial extent of the wavefunctions. The lower index maps reveal Landau level stripes, which would act as traps for chiral one-dimensional modes. Our findings have important implications for transport and magneto-resistance measurements in Dirac materials with engineered potential landscapes.

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