Researcher profile

V. M. Kovalev

V. M. Kovalev contributes to research discovery and scholarly infrastructure.

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Published work

10 published item(s)

preprint2024arXiv

Interaction dominated transport in 2D conductors: from degenerate to partially-degenerate regime

In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes and the heavy holes lead to the breakdown of Galilean invariance, resulting in interaction-limited resistivity. Our exploration of the transport properties spans from low temperatures, where both subsystems are fully degenerate, to higher temperatures, where the Dirac holes remain degenerate while the heavy holes follow Boltzmann statistics, creating a partially degenerate regime. Through a developed theory, we successfully predict the behavior of resistivity as $ρ\sim T^2$ and $ρ\sim T^{3}$ for the fully degenerate and partially degenerate regimes, respectively, which is in reasonable agreement with experimental observations. Notably, at elevated temperatures, the interaction-limited resistivity surpasses the resistivity caused by impurity scattering by a factor of 5-6. These findings imply that the investigated system serves as a versatile experimental platform for exploring various interaction-limited transport regimes in two component plasma.

preprint2022arXiv

All-optical control of excitons in semiconductor quantum wells

Applying the Floquet theory, we developed the method to control excitonic properties of semiconductor quantum wells by a high-frequency electromagnetic field. It is demonstrated, particularly, that the field induces the blue shift of exciton emission from the quantum wells and narrows width of the corresponding spectral line. As a consequence, the field strongly modifies optical properties of the quantum wells and, therefore, can be used to tune characteristics of the optoelectronic devices based on them.

preprint2021arXiv

Nonequilibrium Theory of Photoinduced Valley Hall Effect

A recent scientific debate has arisen: Which processes underlie the actual ground of the valley Hall effect (VHE) in two-dimensional materials? The original VHE emerges in samples with ballistic transport of electrons due to the anomalous velocity terms resulting from the Berry phase effect. In disordered samples though, alternative mechanisms associated with electron scattering off impurities have been suggested: (i) asymmetric electron scattering, called skew scattering, and (ii) a shift of the electron wave packet in real space, called a side jump. It has been claimed that the side jump not only contributes to the VHE but fully offsets the anomalous terms regardless of the drag force for fundamental reasons and, thus, the side-jump together with skew scattering become the dominant mechanisms. However, this claim is based on equilibrium theories without any external valley-selective optical pumping, which makes the results fundamentally interesting but incomplete and impracticable. We develop in this paper a microscopic theory of the photoinduced VHE using the Keldysh nonequilibrium diagrammatic technique and find that the asymmetric skew scattering mechanism is dominant in the vicinity of the interband absorption edge. This allows us to explain the operation of optical transistors based on the VHE.

preprint2020arXiv

Acoustomagnetoelectric effect in two-dimensional materials: Geometric resonances and Weiss oscillations

We study electron transport in two-dimensional materials with parabolic and linear (graphene) dispersions of the carriers in the presence of surface acoustic waves and an external magnetic field using semiclassical Boltzmann equations approach. We observe an oscillatory behavior of both the longitudinal and Hall electric currents as functions of the surface acoustic wave frequency at a fixed magnetic field and as functions of the inverse magnetic field at a fixed frequency of the acoustic wave. We explain the former by the phenomenon of geometric resonances, while we relate the latter to the Weiss-like oscillations in the presence of the dynamic superlattice created by the acoustic wave. Thus we demonstrate the dual nature of the acoustomagnetoelectric effect in two-dimensional electron gas.

preprint2020arXiv

Coherent photogalvanic effect in fluctuating superconductors

We develop a theory of the coherent photogalvanic effect (CPGE) in low-dimensional superconductors in the fluctuating regime. It manifests itself in the appearance of a stationary electric current of Cooper pairs under the action of two coherent electromagnetic fields of light with frequencies lying in the sub-terahertz range. We derive the general formula for the electric current density, study the particular cases of linear and circular polarizations of the external light fields, and show that the current might have a non-monotonous spectrum at certain polarization angles and turns out very sensitive to the proximity of the ambient temperature to the critical temperature of superconducting transition: Approaching the critical temperature, the peak in the spectrum becomes narrower, its frequency experiences a redshift, and the intensity of the peak drastically grows.

preprint2020arXiv

Floquet engineering of the Luttinger Hamiltonian

Within the Floquet theory of periodically driven quantum systems, we developed the theory of light-induced modification of electronic states in semiconductor materials described by the Luttinger Hamiltonian (the electronic term $Γ_8$). Particularly, exact solutions of the Floquet problem are found for the band edge in the cases of linearly and circularly polarized irradiation. It is shown that the irradiation changes electron effective masses near the band edge, induces anisotropy of the electron dispersion and splits the bands. It is demonstrated that the light-induced band splitting strongly depends on the light polarization. Namely, the circularly polarized light acts similarly to a stationary magnetic field and lifts the spin degeneracy of electron branches, whereas a linearly polarized light does not affect the spin degeneracy and only splits the bands in the center of the Brillouin zone. The present theory can be applied to describe electronic properties of various semiconductor structures irradiated by an electromagnetic field in the broad frequency range.

preprint2020arXiv

Interplay between collective modes in hybrid electron gas-superconductor structures

We study hybridization of collective plasmon and Carlson-Goldman-Artemenko-Volkov modes in a hybrid system, consisting of a two-dimensional layers of electron gas in the normal state and superconductor, coupled by long-range Coulomb forces. The interaction between these collective modes is not possible in a regular single-layer two-dimensional system since they exist in non-overlapping domains of dimensionless parameter $ωτ$, where $ω$ is the external electromagnetic field frequency and $τ$ is electron scattering time. Thus, in a single-layer structure, these modes are mutually exclusive. However, the coupling may become possible in a hybrid system consisting of two separated in space materials with different properties, in particular, the electron scattering time. We investigate the electromagnetic power absorption by the hybrid system and reveal the conditions necessary for the hybridization of collective modes.

preprint2020arXiv

Light-induced bound electron states in two-dimensional systems: Contribution to electron transport

In two-dimensional (2D) electron systems, an off-resonant high-frequency circularly polarized electromagnetic field can induce the quasi-stationary bound electron states of repulsive scatterers. As a consequence, the resonant scattering of conduction electrons through the quasi-stationary states and the capture of conduction electrons by the states appear. The present theory describes the transport properties of 2D electron gas irradiated by a circularly polarized light, which are modified by these processes. Particularly, it is demonstrated that irradiation of 2D electron systems by the off-resonant field results in the quantum correction to conductivity of resonant kind.

preprint2020arXiv

Proposal for Plasmon Spectroscopy of Fluctuations in Low-Dimensional Superconductors

We propose to employ an optical spectroscopy technique to monitor the superconductivity and properties of superconductors in the fluctuating regime. This technique is operational close to the plasmon resonance frequency of the material, and it intimately connects with the superconducting fluctuations slightly above the critical temperature $T_c$. We find the Aslamazov-Larkin corrections to AC linear and DC nonlinear electric currents in a generic two-dimensional system exposed to an external longitudinal electromagnetic field. First, we study the plasmon resonance of normal electrons near $T_c$, taking into account their interaction with superconducting fluctuations, and show that fluctuating Cooper pairs reveal a redshift of the plasmon dispersion and an additional mechanism of plasmon scattering, which surpasses both the electron-impurity and the Landau dampings. Second, we demonstrate the emergence of a drag effect of superconducting fluctuations by the external field resulting in considerable, experimentally measurable corrections to the electric current in the vicinity of the plasmon resonance.

preprint2013arXiv

Rashba plasmon polaritons in semiconductor heterostructures

We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal and asymmetric quantum well. Due to the Rashba spin-orbit interaction, mimina of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in $Γ$-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.