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V. Hung Nguyen

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other cond-mat.str-el

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preprint2022arXiv

Electronic properties of twisted multilayer graphene

Twisted bilayer graphene displays many fascinating properties that can be tuned by varying the relative angle (also called twist angle) between its monolayers. As a remarkable feature, both the electronic flat bands and the corresponding strong electron localization have been obtained at a specific "magic" angle ($\sim 1.1^{\circ}$), leading to the observation of several strongly correlated electronic phenomena. Such a discovery has hence inspired the creation of a novel research field called twistronics, i.e., aiming to explore novel physical properties in vertically stacked 2D structures when tuning the twist angle between the related layers. In this paper, a comprehensive and systematic study related to the electronic properties of twisted multilayer graphene (TMG) is presented based on atomistic calculations. The dependence of both the global and the local electronic quantities on the twist angle and on the stacking configuration are analyzed, fully taking into account atomic reconstruction effects. Consequently, the correlation between structural and electronic properties are clarified, thereby highlighting the shared characteristics and differences between various TMG systems as well as providing a comprehensive and essential overview. On the basis of these investigations, possibilities to tune the electronic properties are discussed, allowing for further developments in the field of twistronics.

preprint2014arXiv

Enhanced thermoelectric figure of merit in vertical graphene junctions

In this work, we investigate thermoelectric properties of junctions consisting of two partially overlapped graphene sheets coupled to each other in the cross-plane direction. It is shown that because of the weak van-der Waals interactions between graphene layers, the phonon conductance in these junctions is strongly reduced, compared to that of single graphene layer structures, while their electrical performance is weakly affected. By exploiting this effect, we demonstrate that the thermoelectric figure of merit can reach values higher than 1 at room temperature in junctions made of gapped graphene materials, for instance, graphene nanoribbons and graphene nanomeshes. The dependence of thermoelectric properties on the junction length is also discussed. This theoretical study hence suggests an efficient way to enhance thermoelectric efficiency of graphene devices.

preprint2014arXiv

Klein-tunneling transistor with ballistic graphene

Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of devices exploiting the optics-like behavior of Dirac Fermions (DF) as in the Vesalego lens or the Fabry Pérot cavity. Here we propose a Klein tunneling transistor based on geometrical optics of DF. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of the transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using Non Equilibrium Green's Function(NEGF) simulation.

preprint2011arXiv

Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions

We investigate the transport characteristics of monolayer graphene p-n junctions by means of the non-equilibrium Green's function technique. It is shown that thanks to the high interband tunneling of chiral fermions and to a finite bandgap opening when the inversion symmetry of graphene plane is broken, a strong negative-differential-conductance behavior with peak-to-valley ratio as large as a few tens can be achieved even at room temperature. The dependence of this behavior on the device parameters such as the Fermi energy, the barrier height, and the transition length is then discussed.

preprint2009arXiv

Controllable spin-dependent transport in armchair graphene nanoribbon structures

Using the non-equilibrium Green's functions formalism in a tight binding model, the spin-dependent transport in armchair graphene nanoribbon (GNR) structures controlled by a ferromagnetic gate is investigated. Beyond the oscillatory behavior of conductance and spin polarization with respect to the barrier height, which can be tuned by the gate voltage, we especially analyze the effect of width-dependent band gap and the nature of contacts. The oscillation of spin polarization in the GNRs with a large band gap is strong in comparison with 2D-graphene structures. Very high spin polarization (close to 100%) is observed in normal-conductor/graphene/normal-conductor junctions. Moreover, we find that the difference of electronic structure between normal conductor and graphene generates confined states in the device which have a strong influence on the transport quantities. It suggests that the device should be carefully designed to obtain high controllability of spin current.

preprint2005arXiv

Shot noise in metallic double dot structures with a negative differential conductance

The shot noise of current through a metallic double quantum dot structure exhibiting negative differential conductance is studied. We can exactly solve the master equation and derive an analytical expression of the spectral density of current fluctuations as a function of frequency in the first Coulomb staircase region. For a large range of bias voltage the noise is calculated by Monte Carlo simulation. We show that the noise is always sub-Poissonian though it is considerably enhanced in the negative differential conductance regime.