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P. Dollfus

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cond-mat.mes-hall cond-mat.other physics.app-ph

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preprint2022arXiv

Study of phonon transport across several Si/Ge interfaces using full-band phonon Monte Carlo simulation

A Full Band Monte Carlo simulator has been developed to consider phonon transmission across interfaces that are perpendicular to the heat flux. This solver of the Boltzmann transport equation which does not require any assumption on the shape the phonon distribution can naturally consider all phonon transport regimes from the diffusive to the fully ballistic regime. Hence, this simulator is used to study single and double Si/Ge heterostructures from the micrometer scale down to the nanometer scale i.e. in all phonon transport regime from ballistic to fully diffusive. A methodology to estimate the thermal conductivities and the thermal interfaces is presented.

preprint2020arXiv

A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect

We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high ION/IOFF ratios, compatible with electronic applications, albeit biased at ultralow voltages of around 0.1 V.

preprint2020arXiv

Revisiting thermal conductivity and interface conductance at the nanoscale

A semi-analytical model for studying thermal transport at the nanoscale, able to accurately describe both the effect of out of equilibrium transport and the thermal transfer at interfaces, is presented. Our approach is based on the definition of pseudo local temperatures distinguishing the phonon populations according to the direction of their velocity. This formalism leads to a complete set of equations capturing the heat transfer in nanostructures even in the case of hetero-structures. This model only requires introducing a new intrinsic thermal parameter called ballistic thermal conductance and a geometric one called the effective thermal conductivity. Finally, this model is able to reproduce accurately advanced numerical results of Monte Carlo simulation for phonons in all phonon transport regime: diffusive (as the Fourier heat transport regime is included), ballistic, and intermediate ones even if thermal interface are involved. This formalism should provide new insights in the interpretation of experimental measurements.

preprint2014arXiv

Enhanced thermoelectric figure of merit in vertical graphene junctions

In this work, we investigate thermoelectric properties of junctions consisting of two partially overlapped graphene sheets coupled to each other in the cross-plane direction. It is shown that because of the weak van-der Waals interactions between graphene layers, the phonon conductance in these junctions is strongly reduced, compared to that of single graphene layer structures, while their electrical performance is weakly affected. By exploiting this effect, we demonstrate that the thermoelectric figure of merit can reach values higher than 1 at room temperature in junctions made of gapped graphene materials, for instance, graphene nanoribbons and graphene nanomeshes. The dependence of thermoelectric properties on the junction length is also discussed. This theoretical study hence suggests an efficient way to enhance thermoelectric efficiency of graphene devices.

preprint2011arXiv

Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions

We investigate the transport characteristics of monolayer graphene p-n junctions by means of the non-equilibrium Green's function technique. It is shown that thanks to the high interband tunneling of chiral fermions and to a finite bandgap opening when the inversion symmetry of graphene plane is broken, a strong negative-differential-conductance behavior with peak-to-valley ratio as large as a few tens can be achieved even at room temperature. The dependence of this behavior on the device parameters such as the Fermi energy, the barrier height, and the transition length is then discussed.

preprint2010arXiv

Electron transport properties in high-purity Ge down to cryogenic temperatures

Electron transport in Ge at various temperatures down to 20 mK has been investigated using particle Monte Carlo simulation taking into account ionized impurity and inelastic phonon scattering. The simulations account for the essential features of electron transport at cryogenic temperature: Ohmic regime, anisotropy of the drift velocity relative to the direction of the electric field, as well as a negative differential mobility phenomenon along the <111> field orientation. Experimental data for the electron velocities are reproduced with a satisfactory accuracy. Examples of electron position in the real space during the simulations are given and evidence separated clouds of electrons propagating along different directions depending on the valley they belong.

preprint2009arXiv

Controllable spin-dependent transport in armchair graphene nanoribbon structures

Using the non-equilibrium Green's functions formalism in a tight binding model, the spin-dependent transport in armchair graphene nanoribbon (GNR) structures controlled by a ferromagnetic gate is investigated. Beyond the oscillatory behavior of conductance and spin polarization with respect to the barrier height, which can be tuned by the gate voltage, we especially analyze the effect of width-dependent band gap and the nature of contacts. The oscillation of spin polarization in the GNRs with a large band gap is strong in comparison with 2D-graphene structures. Very high spin polarization (close to 100%) is observed in normal-conductor/graphene/normal-conductor junctions. Moreover, we find that the difference of electronic structure between normal conductor and graphene generates confined states in the device which have a strong influence on the transport quantities. It suggests that the device should be carefully designed to obtain high controllability of spin current.

preprint2005arXiv

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si1-xGex MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves mueff as a function of the effective vertical field Eeff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120 % for strained Si/ Si0.70Ge0.30, in accordance with best experimental data. The effect of the strained Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only. The role of the different scattering mechanisms involved in the strained Si/ Si1-xGex MOS structures is explained. In addition, comparison with experimental results is discussed in terms of SiO2/ Si interface roughness, as well as surface roughness of the SiGe substrate on which strained Si is grown.