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V. Lien Nguyen

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Published work

7 published item(s)

preprint2016arXiv

Self-optimized biological channels in facilitating the transmembrane movement of charged molecules

We consider an anisotropically two-dimensional diffusion of a charged molecule (particle) through a large biological channel under an external voltage. The channel is modeled as a cylinder of three structure parameters: radius, length, and surface density of negative charges located at the channel interior-lining. These charges induce inside the channel a potential that plays a key role in controlling the particle current through the channel. It was shown that to facilitate the transmembrane particle movement the channel should be reasonably self-optimized so that its potential coincides with the resonant one, resulting in a large particle current across the channel. Observed facilitation appears to be an intrinsic property of biological channels, regardless the external voltage or the particle concentration gradient. This facilitation is very selective in the sense that a channel of definite structure parameters can facilitate the transmembrane movement of only particles of proper valence at corresponding temperatures. Calculations also show that the modeled channel is non-Ohmic with the ion conductance which exhibits a resonance at the same channel potential as that identified in the current.

preprint2016arXiv

The transfer matrix approach to circular graphene quantum dots

We adapt the transfer matrix ($\T$-matrix) method originally designed for one-dimensional quantum mechanical problems to solve the circularly symmetric two-dimensional problem of graphene quantum dots. In similarity to one-dimensional problems, we show that the generalized $\T$-matrix contains rich information about the physical properties of these quantum dots. In particular, it is shown that the spectral equations for bound states as well as quasi-bound states of a circular graphene quantum dot and related quantities such as the local density of states and the scattering coefficients are all expressed exactly in terms of the $\T$-matrix for the radial confinement potential. As an example, we use the developed formalism to analyse physical aspects of a graphene quantum dot induced by a trapezoidal radial potential. Among the obtained results, it is in particular suggested that the thermal fluctuations and electrostatic disorders may appear as an obstacle to controlling the valley polarization of Dirac electrons.

preprint2014arXiv

Touching points in the energy band structure of bilayer graphene superlattices

Energy band structure of the bilayer graphene superlattices with zero-averaged periodic $δ$-function potentials are studied within the four-band continuum model. Using the transfer matrix method, studies are mainly focused on examining the touching points between adjacent minibands. For the zero-energy touching points the dispersion relation derived shows the Dirac-like double-cone shape with the group velocity which is periodic in the potential strength $P$ with the period of $π$ and becomes anisotropic at relatively large $P$. From the finite-energy touching points we have identified those located at zero wave-number. It was shown that for these finite-energy touching points the dispersion is direction-dependent in the sense that it is linear or parabolic in the direction parallel or perpendicular to the superlattice direction, respectively. We have also calculated the density of states and the conductivity that demonstrate a manifestation of the touching points of interest.

preprint2014arXiv

Zero and Finite Energy Dirac Points in the Energy Band Structure of Magnetic Bilayer Graphene Superlattices

Energy band structure of the bilayer graphene superlattices with $δ$-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy Dirac point of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate finite-energy Dirac points at the edges of Brillouin zone the positions of which and the related dispersions are determined in the case of symmetric potentials.

preprint2009arXiv

Controllable spin-dependent transport in armchair graphene nanoribbon structures

Using the non-equilibrium Green's functions formalism in a tight binding model, the spin-dependent transport in armchair graphene nanoribbon (GNR) structures controlled by a ferromagnetic gate is investigated. Beyond the oscillatory behavior of conductance and spin polarization with respect to the barrier height, which can be tuned by the gate voltage, we especially analyze the effect of width-dependent band gap and the nature of contacts. The oscillation of spin polarization in the GNRs with a large band gap is strong in comparison with 2D-graphene structures. Very high spin polarization (close to 100%) is observed in normal-conductor/graphene/normal-conductor junctions. Moreover, we find that the difference of electronic structure between normal conductor and graphene generates confined states in the device which have a strong influence on the transport quantities. It suggests that the device should be carefully designed to obtain high controllability of spin current.

preprint2005arXiv

Shot noise in metallic double dot structures with a negative differential conductance

The shot noise of current through a metallic double quantum dot structure exhibiting negative differential conductance is studied. We can exactly solve the master equation and derive an analytical expression of the spectral density of current fluctuations as a function of frequency in the first Coulomb staircase region. For a large range of bias voltage the noise is calculated by Monte Carlo simulation. We show that the noise is always sub-Poissonian though it is considerably enhanced in the negative differential conductance regime.

preprint2005arXiv

Super-Poissonian noise in a Coulomb blockade metallic quantum dot structure

The shot noise of the current through a single electron transistor (SET), coupled capacitively with an electronic box, is calculated, using the master equation approach. We show that the noise may be sub-Poissonian or strongly super-Poissonian, depending mainly on the box parameters and the gate. The study also supports the idea that not negative differential conductance, but charge accumulation in the quantum dot, responds for the super-Poissonian noise observed.