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Udson C. Mendes

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Published work

6 published item(s)

preprint2022arXiv

EP-PQM: Efficient Parametric Probabilistic Quantum Memory with Fewer Qubits and Gates

Machine learning (ML) classification tasks can be carried out on a quantum computer (QC) using Probabilistic Quantum Memory (PQM) and its extension, Parameteric PQM (P-PQM) by calculating the Hamming distance between an input pattern and a database of $r$ patterns containing $z$ features with $a$ distinct attributes. For accurate computations, the feature must be encoded using one-hot encoding, which is memory-intensive for multi-attribute datasets with $a>2$. We can easily represent multi-attribute data more compactly on a classical computer by replacing one-hot encoding with label encoding. However, replacing these encoding schemes on a QC is not straightforward as PQM and P-PQM operate at the quantum bit level. We present an enhanced P-PQM, called EP-PQM, that allows label encoding of data stored in a PQM data structure and reduces the circuit depth of the data storage and retrieval procedures. We show implementations for an ideal QC and a noisy intermediate-scale quantum (NISQ) device. Our complexity analysis shows that the EP-PQM approach requires $O\left(z \log_2(a)\right)$ qubits as opposed to $O(za)$ qubits for P-PQM. EP-PQM also requires fewer gates, reducing gate count from $O\left(rza\right)$ to $O\left(rz\log_2(a)\right)$. For five datasets, we demonstrate that training an ML classification model using EP-PQM requires 48% to 77% fewer qubits than P-PQM for datasets with $a>2$. EP-PQM reduces circuit depth in the range of 60% to 96%, depending on the dataset. The depth decreases further with a decomposed circuit, ranging between 94% and 99%. EP-PQM requires less space; thus, it can train on and classify larger datasets than previous PQM implementations on NISQ devices. Furthermore, reducing the number of gates speeds up the classification and reduces the noise associated with deep quantum circuits. Thus, EP-PQM brings us closer to scalable ML on a NISQ device.

preprint2016arXiv

Electron-photon interaction in a quantum point contact coupled to a microwave resonator

We study a single-mode cavity weakly coupled to a voltage-biased quantum point contact. In a perturbative analysis, the lowest order predicts a thermal state for the cavity photons, driven by the emission noise of the conductor. The cavity is thus emptied as all transmission probabilities of the quantum point contact approach one or zero. Two-photon processes are identified at higher coupling, and pair absorption dominates over pair emission for all bias voltages. As a result, the number of cavity photons, the cavity damping rate and the second order coherence $g^{(2)}$ are all reduced and exhibit less bunching than the thermal state. These results are obtained with a Keldysh path integral formulation and reproduced with rate equations. They can be seen as a backaction of the cavity measuring the electronic noise. Extending the standard $P(E)$ theory to a steady-state situation, we compute the modified noise properties of the conductor and find quantitative agreement with the perturbative calculation.

preprint2016arXiv

Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres

We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.

preprint2015arXiv

Cavity squeezing by a quantum conductor

Hybrid architectures integrating mesoscopic electronic conductors with resonant microwave cavities have a great potential for investigating unexplored regimes of electron-photon coupling. In this context, producing nonclassical squeezed light is a key step towards quantum communication with scalable solid-state devices. Here we show that parametric driving of the electronic conductor induces a squeezed steady state in the cavity. We find that squeezing properties of the cavity are essentially determined by the electronic noise correlators of the quantum conductor. In the case of a tunnel junction, we predict that squeezing is optimized by applying a time-periodic series of quantized $δ-$peaks in the bias voltage. For an asymmetric quantum dot, we show that a sharp Leviton pulse is able to achieve perfect cavity squeezing.

preprint2015arXiv

Electronic and optical properties of InGaAs quantum wells with Mn-delta-doping GaAs barriers

We present here the electronic structure and optical properties of InGaAs quantum wells with barrier doped with Manganese. We calculated the electronic states and optical emission within the envelope function and effective mass approximations using the spin-density functional theory in the presence of an external magnetic field. We observe magneto-oscillations of the Landau levels at low-magnetic fields (B < 5 T) that are dominated by the magnetic interaction between holes spin and Mn spin, while at high magnetic fields the spin-polarization of the hole gas is the dominant effect. Our results also show that a gate voltage alter significantly the magneto-oscillations of the emission energy and may be an external control parameter for the magnetic properties of the system. Finally, we discuss the influence of the Landau Levels oscillations in the emission spectra and compare with available experimental.

preprint2014arXiv

Electron-electron interaction mediated indirect coupling of electron and magnetic ion or nuclear spins in self-assembled quantum dots

We show here the existence of the indirect coupling of electron and magnetic or nuclear ion spins in self-assembled quantum dots mediated by electron-electron interactions. With a single localized spin placed in the center of the dot, only the spins of electrons occupying the zero angular momentum states couple directly to the localized spin. We show that when the electron-electron interactions are included, the electrons occupying finite angular momentum orbitals interact with the localized spin. This effective interaction is obtained using exact diagonalization of the microscopic Hamiltonian as a function of the number of electronic shells, shell spacing, and anisotropy of the electron-Mn exchange interaction. The effective interaction can be engineered to be either ferromagnetic or antiferromagnetic by tuning the parameters of the quantum dot.