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B. N. Zvonkov

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cond-mat.dis-nn cond-mat.mes-hall physics.optics

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preprint2016arXiv

Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres

We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.

preprint2012arXiv

Quantum well-based waveguide for semiconductor lasers

In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated experimentally. An optically-pumped laser on this basis is realized.

preprint2010arXiv

Analysis of homogeneity of 2D electron gas at decreasing of electron density

We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron density distribution and serial resistance of 2D electron gas are discussed. Simultaneous analysis of gate voltage dependences of capacitance and resistance has shown that in heavily doped 2D systems the main role in the drop of capacitance at decreasing concentration plays the resistance of 2D gas. It is found that the investigated systems remains homogeneous down to the low temperature conductivity about (10^-2-10^-3)e^2/h.

preprint2006arXiv

Giant suppression of the Drude conductivity due to quantum interference in disordered two-dimensional systems

Temperature and magnetic field dependences of the conductivity in heavily doped, strongly disordered two-dimensional quantum well structures GaAs/In$_x$Ga$_{1-x}$As/GaAs are investigated within wide conductivity and temperature ranges. Role of the interference in the electron transport is studied in the regimes when the phase breaking length $L_ϕ$ crosses over the localization length $ξ\sim l\exp{(πk_Fl/2)}$ with lowering temperature, where $k_F$ and $l$ are the Fermi quasimomentum and mean free path, respectively. It has been shown that all the experimental data can be understood within framework of simple model of the conductivity over delocalized states. This model differs from the conventional model of the weak localization developed for $k_Fl\gg 1$ and $L_ϕ\llξ$ by one point: the value of the quantum interference contribution to the conductivity is restricted not only by the phase breaking length $L_ϕ$ but by the localization length $ξ$ as well. We show that just the quantity $(τ_ϕ^\ast)^{-1}=τ_ϕ^{-1}+τ_ξ^{-1}$ rather than $τ_ϕ^{-1}$, where $τ_ϕ\propto T^{-1}$ is the dephasing time and $τ_ξ\simτ\exp(πk_F l)$, is responsible for the temperature and magnetic field dependences of the conductivity over the wide range of temperature and disorder strength down to the conductivity of order $10^{-2} e^2/h$.

preprint2003arXiv

Weak antilocalization in quantum wells in tilted magnetic fields

Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are found as functions of temperature and parallel field. It is demonstrated that spin dephasing is due to the Dresselhaus spin-orbit interaction. The values of electron spin splittings and spin relaxation times are found in the wide range of 2D density. Application of in-plane field is shown to destroy weak antilocalization due to competition of Zeeman and microroughness effects. Their relative contributions are separated, and the values of the in-plane electron g-factor and characteristic size of interface imperfections are found.