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B. N. Zvonkov contributes to research discovery and scholarly infrastructure.
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Published work
In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated experimentally. An optically-pumped laser on this basis is realized.
We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron density distribution and serial resistance of 2D electron gas are discussed. Simultaneous analysis of gate voltage dependences of capacitance and resistance has shown that in heavily doped 2D systems the main role in the drop of capacitance at decreasing concentration plays the resistance of 2D gas. It is found that the investigated systems remains homogeneous down to the low temperature conductivity about (10^-2-10^-3)e^2/h.
Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are found as functions of temperature and parallel field. It is demonstrated that spin dephasing is due to the Dresselhaus spin-orbit interaction. The values of electron spin splittings and spin relaxation times are found in the wide range of 2D density. Application of in-plane field is shown to destroy weak antilocalization due to competition of Zeeman and microroughness effects. Their relative contributions are separated, and the values of the in-plane electron g-factor and characteristic size of interface imperfections are found.