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Tomoya Ono

Tomoya Ono appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phcond-matcond-mat.otherquant-ph

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Published work

24 published item(s)

preprint2023arXiv

Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps

Density functional theory calculations for the electronic structures of the 4H-SiC(0001)/SiO$_2$ interface with atomic-scale steps are carried out to investigate the effect of NO annealing. The characteristic behavior of the conduction band edge states of SiC is strongly affected over a wide area of the interface by the Coulomb interaction of the O atoms in the SiO$_2$ region as well as the step structure of the interface, resulting in the discontinuity of the inversion layers at the step edges under the gate bias. The spatially discontinued band only allows the very limited conduction paths in the inversion layer, leading to the significantly decreased mobile carrier density. It is found that the Coulomb interaction of the O atoms is screened and the inversion layers become continuous when the nitrided layers are inserted at the interface by NO annealing. This result is in good agreement with experimental findings that the improvement of the performance of SiC metal-oxide-semiconductor field-effect-transistors by NO annealing is attributed to an increase in the mobile electron density rather than an increase in the mobility of electrons in the inversion layer.

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preprint2023arXiv

First-principle study of spin transport property in $L1_0$-FePd(001)/graphene heterojunction

In our previous work, we synthesized a metal/2D material heterointerface consisting of $L1_0$-ordered iron-palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has been explored by both experimental measurements and theoretical calculations. In this study, we focus on a heterojunction composed of FePd and multilayer graphene referred to as FePd(001)/$m$-Gr/FePd(001), where $m$ represents the number of graphene layers. We perform first-principles calculations to predict their spin-dependent transport properties. The quantitative calculations of spin-resolved conductance and magnetoresistance (MR) ratio (150-200%) suggest that the proposed structure can function as a magnetic tunnel junction in spintronics applications. We also find that an increase in $m$ not only reduces conductance but also changes transport properties from the tunneling behavior to the graphite $π$-band-like behavior. Additionally, we investigate the spin-transfer torque-induced magnetization switching behavior of our \color{blue} junction structures \color{black} using micromagnetic simulations. Furthermore, we examine the impact of lateral displacements (``sliding'') at the interface and find that the spin transport properties remain robust despite these changes; this is the advantage of two-dimensional material hetero-interfaces over traditional insulating barrier layers such as MgO.

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preprint2022arXiv

Density functional study of twisted graphene $L1_0$-FePd heterogeneous interface

Graphene on $L1_0$-FePd(001), which has been experimentally studied in recent years, is a heterogeneous interface with a significant lattice symmetry mismatch between the honeycomb structure of graphene and tetragonal alloy surface. In this work, we report on the density functional study of its atomic-scale configurations, electronic and magnetic properties, and adsorption mechanism, which have not been well understood in previous experimental studies. We propose various atomic-scale models, including simple nontwisted and low-strain twisted interfaces, and analyze their energetical stability by performing structural optimizations using the van der Waals interactions of both DFT-D2 and optB86b-vdW functionals. The binding energy of the most stable structure reached $E_\mathrm{B}=-0.22$~eV/atom for DFT-D2 ($E_\mathrm{B}=-0.19$~eV/atom for optB86b-vdW). The calculated FePd-graphene spacing distance was approximately 2~Å, which successfully reproduced the experimental value. We also find out characteristic behaviors: the modulation of $π$-bands, the suppression of the site-dependence of adsorption energy, and the rise of \color{blue} moiré-like \color{black} corrugated buckling. In addition, our atomic structure is expected to help build low-cost computational models for investigating the physical properties of $L1_0$ alloys/two-dimensional interfaces.

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preprint2022arXiv

Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO$_2$ interface after NO annealing

We propose the atomic structures of the 4H-SiC/SiO$_2$ interface for the $a$, $m$, C, and Si faces after NO annealing. Our proposed structures preferentially form at the topmost layers of the SiC side of the interface, which agrees with the experimental finding of secondary-ion mass spectrometry, that is, the N atoms accumulate at the interface. In addition, the areal N-atom density is on the order of 10$^{14}$ atom/cm$^2$ for each plane, which is also consistent with the experimental result. Moreover, the electronic structure of the interface after NO annealing, in which the CO bonds are removed and the nitride layer only at the interface is inserted, is free from gap states, although some interface models before NO annealing include the gap states arising from the CO bonds near the valence band edge of the bandgap. Our results imply that NO annealing can contribute to the reduction in the density of interface defects by forming the nitride layer.

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preprint2022arXiv

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation

The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation are investigated by first-principles calculation based on the density functional theory. The difference in the total energy of the defects agrees with the experimental results concerning the dencity of defects. We found that the characteristic behaviors of the generation of defects are explained by the positions of vacancies and antisites in the SiC(000$\bar{1}$) substrate and that the formation of silicon and carbon vacancies is relevant to the generation mechanism of defects. The generation of silicon and carbon vacancies is attributed to the termination of dangling bonds by H atoms introduced by wet oxidation, resulting in generation of carbon-antisite--carbon-vacancy and divacancies defects in wet oxidation.

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preprint2020arXiv

Efficient calculation of the Green's function in scattering region for electron-transport simulations

We propose a first-principles method of efficiently evaluating electron-transport properties of very long systems. Implementing the recursive Green's function method and the shifted conjugate gradient method in the transport simulator based on real-space finite-difference formalism, we can suppress the increase in the computational cost, which is generally proportional to the cube of the system length to a linear order. This enables us to perform the transport calculations of double-walled carbon nanotubes~(DWCNTs) with 196,608 atoms. We find that the conductance spectra exhibit different properties depending on the periodicity of doped impurities in DWCNTs and they differ from the properties for systems with less than 1,000 atoms.

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preprint2015arXiv

Efficient numerical solver for first-principles transport calculation based on real-space finite-difference method

We propose an efficient procedure to obtain Green's functions by combining the shifted conjugate orthogonal conjugate gradient (shifted COCG) method with the nonequilibrium Green's function (NEGF) method based on a real-space finite-difference (RSFD) approach. The bottleneck of the computation in the NEGF scheme is matrix inversion of the Hamiltonian including the self-energy terms of electrodes to obtain perturbed Green's function in the transition region. This procedure first computes unperturbed Green's functions and calculates perturbed Green's functions from the unperturbed ones using a mathematically strict relation. Since the matrices to be inverted to obtain the unperturbed Green's functions are sparse, complex-symmetric and shifted for a given set of sampling energy points, we can use the shifted COCG method, in which once the Green's function for a reference energy point has been calculated, the Green's functions for the other energy points can be obtained with a moderate computational cost. We calculate the transport properties of a C$_{60}$@(10,10) carbon nanotube (CNT) peapod suspended by (10,10)CNTs as an example of a large-scale transport calculation. The proposed scheme opens the possibility of performing large-scale RSFD-NEGF transport calculations using massively parallel computers without the loss of accuracy originating from the incompleteness of the localized basis set.

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preprint2015arXiv

Electron-transport properties of ethyne-bridged diphenyl zinc-porphyrin molecules

We investigate the electron-transport properties of ethyne-bridged diphenyl zinc-porphyrin molecules suspended between gold (111) electrodes by first-principles calculations within the framework of density functional theory. It is found that the conductance of a molecular junction in which phenyl and porphyrin rings are perpendicular is reduced by three orders of magnitude compared with that of a junction in which the phenyl and porphyrin rings are coplanar. In the coplanar configuration, electrons are transmitted through $π$ states, which extend over the whole molecule. In the perpendicular configuration, the conductance is suppressed because of the reduction of electron hopping between $π$ states of the phenyl ring and $σ$ states of the porphyrin ring.

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preprint2015arXiv

First-principles calculation method for electron transport based on grid Lippmann-Schwinger equation

We develop a first-principles electron-transport simulator based on the Lippmann--Schwinger (LS) equation within the framework of the real-space finite-difference scheme. In our fully real-space based LS (grid LS) method, the ratio expression technique for the scattering wave functions and the Green's function elements of the reference system is employed to avoid numerical collapse. Furthermore, we present analytical expressions and/or prominent calculation procedures for the retarded Green's function, which are utilized in the grid LS approach. In order to demonstrate the performance of the grid LS method, we simulate the electron-transport properties of the semiconductor/oxide interfaces sandwiched between semi-infinite metal electrodes. The results confirm that the leakage current through the (001)Si/SiO$_2$ model becomes much larger when the dangling-bond (DB) state is induced by a defect in the oxygen layer while that through the (001)Ge/GeO$_2$ model is insensitive to the DB state.

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preprint2015arXiv

Interplay between O defects and SiC stacking at the SiC/SiO$_2$ interface

We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two different surface types, depending on which of the two lattice sites, $h$ or $k$, is at the surface [K. Arima \textit{et al}., Appl. Phys. Lett. \textbf{90}, 202106 (2007)]. We find interlayer states along the conduction band edge of SiC, whose location changes depending on the interface type, and thus too the effect of defects. When $h$ sites are directly at the interface, O defects remove interfacial conduction band edge states. On the other hand, when $k$ sites are at the interface, the conduction band edge is insensitive to the presence of O defects. These differences will impact on the operation of SiC devices because the most commonly used SiC based metal-oxide-semiconductor field-effect transistors rely on the electronic structure of the conduction band.

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preprint2015arXiv

Real-space method for first-principles electron-transport calculations: self-energy terms of electrodes for large systems

We present a fast and stable numerical technique to obtain the self-energy terms of electrodes for first-principles electron-transport calculations. Although first-principles calculations based on the real-space finite-difference method are advantageous for execution on massively parallel computers, large-scale transport calculations are hampered by the computational cost and numerical instability of the computation of the self-energy terms. Using the orthogonal complement vectors of the space spanned by the generalized Bloch waves that actually contribute to transport phenomena, the computational accuracy of transport properties is significantly improved with a moderate computational cost. To demonstrate the efficiency of the present technique, the electron-transport properties of a Stone-Wales (SW) defect in graphene and silicene are examined. The resonance scattering of the SW defect is observed in the conductance spectrum of silicene since the $σ^\ast$ state of silicene lies near the Fermi energy. In addition, we found that one conduction channel is sensitive to a defect near the Fermi energy, while the other channel is hardly affected. This characteristic behavior of the conduction channels is interpreted in terms of the bonding network between the bilattices of the honeycomb structure in the formation of the SW defect. The present technique enables us to distinguish the different behaviors of the two conduction channels in graphene and silicene owing to its excellent accuracy.

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preprint2013arXiv

First-principles calculation of scattering potentials of Si-Ge and Sn-Ge dimers on Ge(001) surfaces

The scattering potential of the defects on Ge(001) surfaces is investigated by first-principles methods. The standing wave in the spatial map of the local density of states obtained by wave function matching is compared to the image of the differential conductance measured by scanning tunneling spectroscopy. The period of the standing wave and its phase shift agree with those in the experiment. It is found that the scattering potential becomes a barrier when the electronegativity of the upper atom of the dimer is larger than that of the lower atom, while it acts as a well in the opposite case.

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preprint2012arXiv

First-principles transport calculation method based on real-space finite-difference nonequilibrium Green's function scheme

We demonstrate an efficient nonequilibrium Green's function transport calculation procedure based on the real-space finite-difference method. The direct inversion of matrices for obtaining the self-energy terms of electrodes is computationally demanding in the real-space method because the matrix dimension corresponds to the number of grid points in the unit cell of electrodes, which is much larger than that of sites in the tight-binding approach. The procedure using the ratio matrices of the overbridging boundary-matching technique [Phys. Rev. B {\bf 67}, 195315 (2003)], which is related to the wave functions of a couple of grid planes in the matching regions, greatly reduces the computational effort to calculate self-energy terms without losing mathematical strictness. In addition, the present procedure saves computational time to obtain Green's function of the semi-infinite system required in the Landauer-Büttiker formula. Moreover, the compact expression to relate Green's functions and scattering wave functions, which provide a real-space picture of the scattering process, is introduced. An example of the calculated results is given for the transport property of the BN ring connected to (9,0) carbon nanotubes. The wave function matching at the interface reveals that the rotational symmetry of wave functions with respect to the tube axis plays an important role in electron transport. Since the states coming from and going to electrodes show threefold rotational symmetry, the states in the vicinity of the Fermi level, whose wave function exhibits fivefold symmetry, do not contribute to the electron transport through the BN ring.

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preprint2011arXiv

First-principles study on atomic configuration of electron-beam irradiated C$_{60}$ clusters

A theoretical study proposes the atomic configuration of electron-beam irradiated C$_{60}$ thin films. We examined the electronic structure and electron-transport properties of the C$_{60}$ clusters using density-functional calculations and found that a rhombohedral C$_{60}$ polymer with $sp^3$-bonded dumbbell-shaped connections at the molecule junction is a semiconductor with a narrow band gap while the polymer changes to exhibit metallic behavior by forming $sp^2$-bonded peanut-shaped connections. Conductance below the Fermi level increases and the peak of the conductance spectrum arising from the $t_{u1}$ states of a C$_{60}$ molecule becomes obscure after the connections are rearranged. The present rohmbohedral film, including the [2+2] four-membered rings and peanut-shaped connections, is a candidate to represent the structure of the metallic C$_{60}$ polymer at the initial stage of electron-beam irradiation.

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preprint2011arXiv

First-Principles Study on Structural Properties of GeO$_2$ and SiO$_2$ under Compression and Expansion Pressure

The detailed analysis of the structural variations of three GeO$_2$ and SiO$_2$ polymorphs ($α$-quartz, $α$-cristobalite, and rutile) under compression and expansion pressure is reported. First-principles total-energy calculations reveal that the rutile structure is the most stable phase among the phases of GeO$_2$, while SiO$_2$ preferentially forms quartz. GeO$_4$ tetrahedras of quartz and cristobalite GeO$_2$ phases at the equilibrium volume are more significantly distorted than those of SiO$_2$. Moreover, in the case of quartz GeO$_2$ and cristobalite GeO$_2$, all O-Ge-O bond angles vary when the volume of the GeO$_2$ bulk changes from the equilibrium point, which causes further deformation of tetrahedra. In contrast, the tilt angle formed by Si-O-Si in SiO$_2$ markedly changes. This flexibility of the O-Ge-O bonds reduces the stress at the Ge/GeO$_2$ interface due to the lattice-constant mismatch and results in the low defective interface observed in the experiments [Matsubara \textit{et al.}: Appl. Phys. Lett. \textbf{93} (2008) 032104; Hosoi \textit{et al.}: Appl. Phys. Lett. \textbf{94} (2009) 202112].

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preprint2011arXiv

Fully spin-dependent transport of triangular graphene flakes

The magnetic moment and spin-polarized electron transport properties of triangular graphene flakes surrounded by boron nitride sheets (BNC structures) are studied by using first-principles calculations based on density functional theory. Their dependence on the BNC structure is discussed, revealing that small isolated graphene flakes have large magnetic moment. When the BNC structure is suspended between graphene electrodes, the spin-polarized charge density distribution accumulates at the edge of the graphene flakes and no spin polarization is observed in the graphene electrodes. We also found that the BNC structure demonstrates perfectly spin-polarized transport properties in the wide energy window around the Fermi level. Our first-principles results indicate that the BNC structure provides new possibilities to electrically control spin.

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preprint2011arXiv

New structural model for GeO2/Ge interface: A first-principles study

First-principles modeling of a GeO2/Ge(001) interface reveals that sixfold GeO2, which is derived from cristobalite and is different from rutile, dramatically reduces the lattice mismatch at the interface and is much more stable than the conventional fourfold interface. Since the grain boundary between fourfold and sixfold GeO2 is unstable, the sixfold GeO2 forms a large grain at the interface. On the contrary, a comparative study with SiO2 demonstrates that SiO2 maintains a fourfold structure. The sixfold GeO2/Ge interface is shown to be a consequence of the ground-state phase of GeO2. In addition, the electronic structure calculation reveals that sixfold GeO2 at the interface shifts the valence band maximum far from the interface toward the conduction band.

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preprint2010arXiv

First-principles electronic-structure calculation of dangling bonds at Si/SiO$_2$ and Ge/GeO$_2$ interfaces

Evidence of the absence of the clear electron spin-resonance signal from Ge dangling bonds (DBs) at Ge/GeO$_2$ interfaces is explored by means of first-principles electronic-structure calculations. Comparing the electronic structures of the DBs at Si/SiO$_2$ and Ge/GeO$_2$ interfaces, we found that the electronic structure of the Ge-DB is markedly different from that of the Si-DB; the Ge-DB states does not position in the energy band gap of the Ge/GeO$_2$ interface while the Si-DB states clearly appears. In addition, the charge density distribution of the Ge-DB state spreads more widely than that of the Si-DB state. These features are explained by considering the metallic properties of the bonding network of the Ge/GeO$_2$ interface and the structural deformation of the Ge bulk at the Ge/GeO$_2$ interface due to the lattice-constant mismatch.

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preprint2010arXiv

Novel time-saving first-principles calculation method for electron-transport properties

We present a time-saving simulator within the framework of the density functional theory to calculate the transport properties of electrons through nanostructures suspended between semi-infinite electrodes. By introducing the Fourier transform and preconditioning conjugate-gradient algorithms into the simulator, a highly efficient performance can be achieved in determining scattering wave functions and electron-transport properties of nanostructures suspended between semi-infinite jellium electrodes. To demonstrate the performance of the present algorithms, we study the conductance of metallic nanowires and the origin of the oscillatory behavior in the conductance of an Ir nanowire. It is confirmed that the $s$-$d_{z^2}$ channel of the Ir nanowire exhibits the transmission oscillation with a period of two-atom length, which is also dominant in the experimentally obtained conductance trace.

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preprint2010arXiv

Real-space electronic-structure calculations with full-potential all-electron precision for transition-metals

We have developed an efficient computational scheme utilizing the real-space finite-difference formalism and the projector augmented-wave (PAW) method to perform precise first-principles electronic-structure simulations based on the density functional theory for systems containing transition metals with a modest computational effort. By combining the advantages of the time-saving double-grid technique and the Fourier filtering procedure for the projectors of pseudopotentials, we can overcome the egg box effect in the computations even for first-row elements and transition metals, which is a problem of the real-space finite-difference formalism. In order to demonstrate the potential power in terms of precision and applicability of the present scheme, we have carried out simulations to examine several bulk properties and structural energy differences between different bulk phases of transition metals, and have obtained excellent agreement with the results of other precise first-principles methods such as a plane wave based PAW method and an all-electron full-potential linearized augmented plane wave (FLAPW) method.

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preprint2009arXiv

First-Principles Study for Evidence of Low Interface Defect Density at Ge/GeO$_2$ Interfaces

We present the evidence of the low defect density at Ge/GeO$_2$ interfaces in terms of first-principles total energy calculations. The energy advantages of the atom emission from the Ge/GeO$_2$ interface to release the stress due to the lattice mismatch are compared with those from the Si/SiO$_2$ interface. The energy advantages of the Ge/GeO$_2$ are found to be smaller than those of the Si/SiO$_2$ because of the high flexibility of the bonding networks in GeO$_2$. Thus, the suppression of the Ge-atom emission during the oxidation process leads to the improved electrical properties of the Ge/GeO$_2$ interfaces.

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preprint2009arXiv

First-Principles Study on Leakage Current through Si/SiO$_2$ Interface

The relationship between the presence of defects at the stacking structure of the Si/SiO$_2$ interface and leakage current is theoretically studied by first-principles calculation. I found that the leakage current through the interface with dangling bonds is 530 times larger than that without any defects, which is expected to lead to dielectric breakdown. The direction of the dangling bonds is closely related to the performance of the oxide as an insulator. In addition, it is proved that the termination of the dangling bonds by hydrogen atoms is effective for reducing the leakage current.

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preprint2006arXiv

First-Principles Study on Electron-Conduction Properties of C$_{60}$ Chains

The electron-conduction properties of fullerene chains are examined by first-principles calculations based on the density functional theory. The conductivity of the C$_{60}$ dimer is low owing to the constraint of the junction of the molecules on electron conduction, whereas the C$_{60}$ monomer exhibits a conductance of $\sim$ 1 G$_0$. One of the three degenerate $t_{u1}$ states of C$_{60}$ is relevant to conduction and the contributions of the others are small. In addition, we found a more interesting result that the conductance of the fullerene chain is drastically increased by encapsuling metal atoms into cages.

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preprint2002arXiv

First-Principles Study on Peierls Instability in Infinite Single-Row Al Wires

We present the relation between the atomic and spin-electronic structures of infinite single-row atomic wires made of Al atoms during their elongation using first-principles molecular-dynamics simulations. Our study reveals that the Peierls transition indeed occurs in the wire with magnetic ordering: it ruptures to form a trimerized structure with antiferromagnetic ordering and changes from a conductor to an insulator just before forming a linear wire of equally-spaced atoms. The formation of the trimerized wire is discussed in terms of the behavior of the $σ$-symmetry bands of the Al wire.

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