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Researcher profile

Tomoya Ono

Tomoya Ono contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph

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Published work

11 published item(s)

preprint2023arXiv

Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps

Density functional theory calculations for the electronic structures of the 4H-SiC(0001)/SiO$_2$ interface with atomic-scale steps are carried out to investigate the effect of NO annealing. The characteristic behavior of the conduction band edge states of SiC is strongly affected over a wide area of the interface by the Coulomb interaction of the O atoms in the SiO$_2$ region as well as the step structure of the interface, resulting in the discontinuity of the inversion layers at the step edges under the gate bias. The spatially discontinued band only allows the very limited conduction paths in the inversion layer, leading to the significantly decreased mobile carrier density. It is found that the Coulomb interaction of the O atoms is screened and the inversion layers become continuous when the nitrided layers are inserted at the interface by NO annealing. This result is in good agreement with experimental findings that the improvement of the performance of SiC metal-oxide-semiconductor field-effect-transistors by NO annealing is attributed to an increase in the mobile electron density rather than an increase in the mobility of electrons in the inversion layer.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

First-principle study of spin transport property in $L1_0$-FePd(001)/graphene heterojunction

In our previous work, we synthesized a metal/2D material heterointerface consisting of $L1_0$-ordered iron-palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has been explored by both experimental measurements and theoretical calculations. In this study, we focus on a heterojunction composed of FePd and multilayer graphene referred to as FePd(001)/$m$-Gr/FePd(001), where $m$ represents the number of graphene layers. We perform first-principles calculations to predict their spin-dependent transport properties. The quantitative calculations of spin-resolved conductance and magnetoresistance (MR) ratio (150-200%) suggest that the proposed structure can function as a magnetic tunnel junction in spintronics applications. We also find that an increase in $m$ not only reduces conductance but also changes transport properties from the tunneling behavior to the graphite $π$-band-like behavior. Additionally, we investigate the spin-transfer torque-induced magnetization switching behavior of our \color{blue} junction structures \color{black} using micromagnetic simulations. Furthermore, we examine the impact of lateral displacements (``sliding'') at the interface and find that the spin transport properties remain robust despite these changes; this is the advantage of two-dimensional material hetero-interfaces over traditional insulating barrier layers such as MgO.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Density functional study of twisted graphene $L1_0$-FePd heterogeneous interface

Graphene on $L1_0$-FePd(001), which has been experimentally studied in recent years, is a heterogeneous interface with a significant lattice symmetry mismatch between the honeycomb structure of graphene and tetragonal alloy surface. In this work, we report on the density functional study of its atomic-scale configurations, electronic and magnetic properties, and adsorption mechanism, which have not been well understood in previous experimental studies. We propose various atomic-scale models, including simple nontwisted and low-strain twisted interfaces, and analyze their energetical stability by performing structural optimizations using the van der Waals interactions of both DFT-D2 and optB86b-vdW functionals. The binding energy of the most stable structure reached $E_\mathrm{B}=-0.22$~eV/atom for DFT-D2 ($E_\mathrm{B}=-0.19$~eV/atom for optB86b-vdW). The calculated FePd-graphene spacing distance was approximately 2~Å, which successfully reproduced the experimental value. We also find out characteristic behaviors: the modulation of $π$-bands, the suppression of the site-dependence of adsorption energy, and the rise of \color{blue} moiré-like \color{black} corrugated buckling. In addition, our atomic structure is expected to help build low-cost computational models for investigating the physical properties of $L1_0$ alloys/two-dimensional interfaces.

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preprint2022arXiv

Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO$_2$ interface after NO annealing

We propose the atomic structures of the 4H-SiC/SiO$_2$ interface for the $a$, $m$, C, and Si faces after NO annealing. Our proposed structures preferentially form at the topmost layers of the SiC side of the interface, which agrees with the experimental finding of secondary-ion mass spectrometry, that is, the N atoms accumulate at the interface. In addition, the areal N-atom density is on the order of 10$^{14}$ atom/cm$^2$ for each plane, which is also consistent with the experimental result. Moreover, the electronic structure of the interface after NO annealing, in which the CO bonds are removed and the nitride layer only at the interface is inserted, is free from gap states, although some interface models before NO annealing include the gap states arising from the CO bonds near the valence band edge of the bandgap. Our results imply that NO annealing can contribute to the reduction in the density of interface defects by forming the nitride layer.

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preprint2022arXiv

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation

The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation are investigated by first-principles calculation based on the density functional theory. The difference in the total energy of the defects agrees with the experimental results concerning the dencity of defects. We found that the characteristic behaviors of the generation of defects are explained by the positions of vacancies and antisites in the SiC(000$\bar{1}$) substrate and that the formation of silicon and carbon vacancies is relevant to the generation mechanism of defects. The generation of silicon and carbon vacancies is attributed to the termination of dangling bonds by H atoms introduced by wet oxidation, resulting in generation of carbon-antisite--carbon-vacancy and divacancies defects in wet oxidation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Efficient calculation of the Green's function in scattering region for electron-transport simulations

We propose a first-principles method of efficiently evaluating electron-transport properties of very long systems. Implementing the recursive Green's function method and the shifted conjugate gradient method in the transport simulator based on real-space finite-difference formalism, we can suppress the increase in the computational cost, which is generally proportional to the cube of the system length to a linear order. This enables us to perform the transport calculations of double-walled carbon nanotubes~(DWCNTs) with 196,608 atoms. We find that the conductance spectra exhibit different properties depending on the periodicity of doped impurities in DWCNTs and they differ from the properties for systems with less than 1,000 atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron-transport properties of ethyne-bridged diphenyl zinc-porphyrin molecules

We investigate the electron-transport properties of ethyne-bridged diphenyl zinc-porphyrin molecules suspended between gold (111) electrodes by first-principles calculations within the framework of density functional theory. It is found that the conductance of a molecular junction in which phenyl and porphyrin rings are perpendicular is reduced by three orders of magnitude compared with that of a junction in which the phenyl and porphyrin rings are coplanar. In the coplanar configuration, electrons are transmitted through $π$ states, which extend over the whole molecule. In the perpendicular configuration, the conductance is suppressed because of the reduction of electron hopping between $π$ states of the phenyl ring and $σ$ states of the porphyrin ring.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

First-principles calculation of scattering potentials of Si-Ge and Sn-Ge dimers on Ge(001) surfaces

The scattering potential of the defects on Ge(001) surfaces is investigated by first-principles methods. The standing wave in the spatial map of the local density of states obtained by wave function matching is compared to the image of the differential conductance measured by scanning tunneling spectroscopy. The period of the standing wave and its phase shift agree with those in the experiment. It is found that the scattering potential becomes a barrier when the electronegativity of the upper atom of the dimer is larger than that of the lower atom, while it acts as a well in the opposite case.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

First-principles transport calculation method based on real-space finite-difference nonequilibrium Green's function scheme

We demonstrate an efficient nonequilibrium Green's function transport calculation procedure based on the real-space finite-difference method. The direct inversion of matrices for obtaining the self-energy terms of electrodes is computationally demanding in the real-space method because the matrix dimension corresponds to the number of grid points in the unit cell of electrodes, which is much larger than that of sites in the tight-binding approach. The procedure using the ratio matrices of the overbridging boundary-matching technique [Phys. Rev. B {\bf 67}, 195315 (2003)], which is related to the wave functions of a couple of grid planes in the matching regions, greatly reduces the computational effort to calculate self-energy terms without losing mathematical strictness. In addition, the present procedure saves computational time to obtain Green's function of the semi-infinite system required in the Landauer-Büttiker formula. Moreover, the compact expression to relate Green's functions and scattering wave functions, which provide a real-space picture of the scattering process, is introduced. An example of the calculated results is given for the transport property of the BN ring connected to (9,0) carbon nanotubes. The wave function matching at the interface reveals that the rotational symmetry of wave functions with respect to the tube axis plays an important role in electron transport. Since the states coming from and going to electrodes show threefold rotational symmetry, the states in the vicinity of the Fermi level, whose wave function exhibits fivefold symmetry, do not contribute to the electron transport through the BN ring.

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preprint2011arXiv

Fully spin-dependent transport of triangular graphene flakes

The magnetic moment and spin-polarized electron transport properties of triangular graphene flakes surrounded by boron nitride sheets (BNC structures) are studied by using first-principles calculations based on density functional theory. Their dependence on the BNC structure is discussed, revealing that small isolated graphene flakes have large magnetic moment. When the BNC structure is suspended between graphene electrodes, the spin-polarized charge density distribution accumulates at the edge of the graphene flakes and no spin polarization is observed in the graphene electrodes. We also found that the BNC structure demonstrates perfectly spin-polarized transport properties in the wide energy window around the Fermi level. Our first-principles results indicate that the BNC structure provides new possibilities to electrically control spin.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

First-principles electronic-structure calculation of dangling bonds at Si/SiO$_2$ and Ge/GeO$_2$ interfaces

Evidence of the absence of the clear electron spin-resonance signal from Ge dangling bonds (DBs) at Ge/GeO$_2$ interfaces is explored by means of first-principles electronic-structure calculations. Comparing the electronic structures of the DBs at Si/SiO$_2$ and Ge/GeO$_2$ interfaces, we found that the electronic structure of the Ge-DB is markedly different from that of the Si-DB; the Ge-DB states does not position in the energy band gap of the Ge/GeO$_2$ interface while the Si-DB states clearly appears. In addition, the charge density distribution of the Ge-DB state spreads more widely than that of the Si-DB state. These features are explained by considering the metallic properties of the bonding network of the Ge/GeO$_2$ interface and the structural deformation of the Ge bulk at the Ge/GeO$_2$ interface due to the lattice-constant mismatch.

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