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Mitsuharu Uemoto

Mitsuharu Uemoto contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2023arXiv

Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps

Density functional theory calculations for the electronic structures of the 4H-SiC(0001)/SiO$_2$ interface with atomic-scale steps are carried out to investigate the effect of NO annealing. The characteristic behavior of the conduction band edge states of SiC is strongly affected over a wide area of the interface by the Coulomb interaction of the O atoms in the SiO$_2$ region as well as the step structure of the interface, resulting in the discontinuity of the inversion layers at the step edges under the gate bias. The spatially discontinued band only allows the very limited conduction paths in the inversion layer, leading to the significantly decreased mobile carrier density. It is found that the Coulomb interaction of the O atoms is screened and the inversion layers become continuous when the nitrided layers are inserted at the interface by NO annealing. This result is in good agreement with experimental findings that the improvement of the performance of SiC metal-oxide-semiconductor field-effect-transistors by NO annealing is attributed to an increase in the mobile electron density rather than an increase in the mobility of electrons in the inversion layer.

preprint2023arXiv

First-principle study of spin transport property in $L1_0$-FePd(001)/graphene heterojunction

In our previous work, we synthesized a metal/2D material heterointerface consisting of $L1_0$-ordered iron-palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has been explored by both experimental measurements and theoretical calculations. In this study, we focus on a heterojunction composed of FePd and multilayer graphene referred to as FePd(001)/$m$-Gr/FePd(001), where $m$ represents the number of graphene layers. We perform first-principles calculations to predict their spin-dependent transport properties. The quantitative calculations of spin-resolved conductance and magnetoresistance (MR) ratio (150-200%) suggest that the proposed structure can function as a magnetic tunnel junction in spintronics applications. We also find that an increase in $m$ not only reduces conductance but also changes transport properties from the tunneling behavior to the graphite $π$-band-like behavior. Additionally, we investigate the spin-transfer torque-induced magnetization switching behavior of our \color{blue} junction structures \color{black} using micromagnetic simulations. Furthermore, we examine the impact of lateral displacements (``sliding'') at the interface and find that the spin transport properties remain robust despite these changes; this is the advantage of two-dimensional material hetero-interfaces over traditional insulating barrier layers such as MgO.

preprint2022arXiv

Density functional study of twisted graphene $L1_0$-FePd heterogeneous interface

Graphene on $L1_0$-FePd(001), which has been experimentally studied in recent years, is a heterogeneous interface with a significant lattice symmetry mismatch between the honeycomb structure of graphene and tetragonal alloy surface. In this work, we report on the density functional study of its atomic-scale configurations, electronic and magnetic properties, and adsorption mechanism, which have not been well understood in previous experimental studies. We propose various atomic-scale models, including simple nontwisted and low-strain twisted interfaces, and analyze their energetical stability by performing structural optimizations using the van der Waals interactions of both DFT-D2 and optB86b-vdW functionals. The binding energy of the most stable structure reached $E_\mathrm{B}=-0.22$~eV/atom for DFT-D2 ($E_\mathrm{B}=-0.19$~eV/atom for optB86b-vdW). The calculated FePd-graphene spacing distance was approximately 2~Å, which successfully reproduced the experimental value. We also find out characteristic behaviors: the modulation of $π$-bands, the suppression of the site-dependence of adsorption energy, and the rise of \color{blue} moiré-like \color{black} corrugated buckling. In addition, our atomic structure is expected to help build low-cost computational models for investigating the physical properties of $L1_0$ alloys/two-dimensional interfaces.

preprint2022arXiv

Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO$_2$ interface after NO annealing

We propose the atomic structures of the 4H-SiC/SiO$_2$ interface for the $a$, $m$, C, and Si faces after NO annealing. Our proposed structures preferentially form at the topmost layers of the SiC side of the interface, which agrees with the experimental finding of secondary-ion mass spectrometry, that is, the N atoms accumulate at the interface. In addition, the areal N-atom density is on the order of 10$^{14}$ atom/cm$^2$ for each plane, which is also consistent with the experimental result. Moreover, the electronic structure of the interface after NO annealing, in which the CO bonds are removed and the nitride layer only at the interface is inserted, is free from gap states, although some interface models before NO annealing include the gap states arising from the CO bonds near the valence band edge of the bandgap. Our results imply that NO annealing can contribute to the reduction in the density of interface defects by forming the nitride layer.

preprint2022arXiv

First-principles method for nonlinear light propagation at oblique incidence

We have developed a computational method to describe the nonlinear light propagation of an intense and ultrashort pulse at oblique incidence on a flat surface. In the method, coupled equations of macroscopic light propagation and microscopic electron dynamics are simultaneously solved using a multiscale modeling. The microscopic electronic motion is described by first-principles time-dependent density functional theory. The macroscopic Maxwell equations that describe oblique light propagation are transformed into one-dimensional wave equations. As an illustration of the method, light propagation at oblique incidence on a silicon thin film is presented.

preprint2022arXiv

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation

The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation are investigated by first-principles calculation based on the density functional theory. The difference in the total energy of the defects agrees with the experimental results concerning the dencity of defects. We found that the characteristic behaviors of the generation of defects are explained by the positions of vacancies and antisites in the SiC(000$\bar{1}$) substrate and that the formation of silicon and carbon vacancies is relevant to the generation mechanism of defects. The generation of silicon and carbon vacancies is attributed to the termination of dangling bonds by H atoms introduced by wet oxidation, resulting in generation of carbon-antisite--carbon-vacancy and divacancies defects in wet oxidation.

preprint2021arXiv

First-principles study of ultrafast and nonlinear optical properties of graphite thin films

We theoretically investigate ultrafast and nonlinear optical properties of graphite thin films based on first-principles time-dependent density functional theory. We first calculate electron dynamics in a unit cell of graphite under a strong pulsed electric field and explore the transient optical properties of graphite. It is shown that the optical response of graphite shows a sudden change from conducting to insulating phase at a certain intensity range of the applied electric field. It also appears as a saturable absorption, the saturation in the energy transfer from the electric field to electrons. We next investigate a light propagation in graphite thin films by solving coupled dynamics of the electrons and the electromagnetic fields simultaneously. It is observed that the saturable absorption manifests in the propagation with small attenuation in the spatial region where the electric field amplitude is about $4 \sim 7 \times 10^{-2}$ V/Angstrom.