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Shigeru Tsukamoto

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cond-mat.mes-hall cond-mat.mtrl-sci physics.comp-ph

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preprint2021arXiv

Single-crystal graphene on Ir(110)

A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moiré with the substrate are uncovered. The adsorbed graphene layer forms a wave pattern of nm wave length with a corresponding modulation of its electronic properties. This wave pattern is demonstrated to enable the templated adsorption of aromatic molecules and the uniaxial growth of organometallic wires. Not limited to this, graphene on Ir(110) is also a versatile substrate for 2D-layer growth and makes it possible to grow epitaxial layers on ureconstructed Ir(110).

preprint2020arXiv

Efficient calculation of the Green's function in scattering region for electron-transport simulations

We propose a first-principles method of efficiently evaluating electron-transport properties of very long systems. Implementing the recursive Green's function method and the shifted conjugate gradient method in the transport simulator based on real-space finite-difference formalism, we can suppress the increase in the computational cost, which is generally proportional to the cube of the system length to a linear order. This enables us to perform the transport calculations of double-walled carbon nanotubes~(DWCNTs) with 196,608 atoms. We find that the conductance spectra exhibit different properties depending on the periodicity of doped impurities in DWCNTs and they differ from the properties for systems with less than 1,000 atoms.

preprint2015arXiv

First-principles calculation method for electron transport based on grid Lippmann-Schwinger equation

We develop a first-principles electron-transport simulator based on the Lippmann--Schwinger (LS) equation within the framework of the real-space finite-difference scheme. In our fully real-space based LS (grid LS) method, the ratio expression technique for the scattering wave functions and the Green's function elements of the reference system is employed to avoid numerical collapse. Furthermore, we present analytical expressions and/or prominent calculation procedures for the retarded Green's function, which are utilized in the grid LS approach. In order to demonstrate the performance of the grid LS method, we simulate the electron-transport properties of the semiconductor/oxide interfaces sandwiched between semi-infinite metal electrodes. The results confirm that the leakage current through the (001)Si/SiO$_2$ model becomes much larger when the dangling-bond (DB) state is induced by a defect in the oxygen layer while that through the (001)Ge/GeO$_2$ model is insensitive to the DB state.

preprint2015arXiv

Real-space method for first-principles electron-transport calculations: self-energy terms of electrodes for large systems

We present a fast and stable numerical technique to obtain the self-energy terms of electrodes for first-principles electron-transport calculations. Although first-principles calculations based on the real-space finite-difference method are advantageous for execution on massively parallel computers, large-scale transport calculations are hampered by the computational cost and numerical instability of the computation of the self-energy terms. Using the orthogonal complement vectors of the space spanned by the generalized Bloch waves that actually contribute to transport phenomena, the computational accuracy of transport properties is significantly improved with a moderate computational cost. To demonstrate the efficiency of the present technique, the electron-transport properties of a Stone-Wales (SW) defect in graphene and silicene are examined. The resonance scattering of the SW defect is observed in the conductance spectrum of silicene since the $σ^\ast$ state of silicene lies near the Fermi energy. In addition, we found that one conduction channel is sensitive to a defect near the Fermi energy, while the other channel is hardly affected. This characteristic behavior of the conduction channels is interpreted in terms of the bonding network between the bilattices of the honeycomb structure in the formation of the SW defect. The present technique enables us to distinguish the different behaviors of the two conduction channels in graphene and silicene owing to its excellent accuracy.

preprint2011arXiv

First-principles study on atomic configuration of electron-beam irradiated C$_{60}$ clusters

A theoretical study proposes the atomic configuration of electron-beam irradiated C$_{60}$ thin films. We examined the electronic structure and electron-transport properties of the C$_{60}$ clusters using density-functional calculations and found that a rhombohedral C$_{60}$ polymer with $sp^3$-bonded dumbbell-shaped connections at the molecule junction is a semiconductor with a narrow band gap while the polymer changes to exhibit metallic behavior by forming $sp^2$-bonded peanut-shaped connections. Conductance below the Fermi level increases and the peak of the conductance spectrum arising from the $t_{u1}$ states of a C$_{60}$ molecule becomes obscure after the connections are rearranged. The present rohmbohedral film, including the [2+2] four-membered rings and peanut-shaped connections, is a candidate to represent the structure of the metallic C$_{60}$ polymer at the initial stage of electron-beam irradiation.

preprint2010arXiv

Real-space electronic-structure calculations with full-potential all-electron precision for transition-metals

We have developed an efficient computational scheme utilizing the real-space finite-difference formalism and the projector augmented-wave (PAW) method to perform precise first-principles electronic-structure simulations based on the density functional theory for systems containing transition metals with a modest computational effort. By combining the advantages of the time-saving double-grid technique and the Fourier filtering procedure for the projectors of pseudopotentials, we can overcome the egg box effect in the computations even for first-row elements and transition metals, which is a problem of the real-space finite-difference formalism. In order to demonstrate the potential power in terms of precision and applicability of the present scheme, we have carried out simulations to examine several bulk properties and structural energy differences between different bulk phases of transition metals, and have obtained excellent agreement with the results of other precise first-principles methods such as a plane wave based PAW method and an all-electron full-potential linearized augmented plane wave (FLAPW) method.

preprint2002arXiv

Electron-Transport Properties of Na Nanowires under Applied Bias Voltages

We present first-principles calculations on electron transport through Na nanowires at finite bias voltages. The nanowire exhibits a nonlinear current-voltage characteristic and negative differential conductance. The latter is explained by the drastic suppression of the transmission peaks which is attributed to the electron transportability of the negatively biased plinth attached to the end of the nanowire. In addition, the finding that a voltage drop preferentially occurs on the negatively biased side of the nanowire is discussed in relation to the electronic structure and conduction.