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Tomas Löfwander

Tomas Löfwander contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2023arXiv

Disorder-robust phase crystal in high-temperature superconductors stabilized by strong correlations

The simultaneous interplay of strong electron-electron correlations, topological zero-energy states, and disorder is yet an unexplored territory but of immense interest due to their inevitable presence in many materials. Copper oxide high-temperature superconductors (cuprates) with pair breaking edges host a flat band of topological zero-energy states, making them an ideal playground where strong correlations, topology, and disorder are strongly intertwined. Here we show that this interplay in cuprates generates a new phase of matter: a fully gapped ``phase crystal" state that breaks both translational and time-reversal invariance, characterized by a modulation of the $d$-wave superconducting phase co-existing with a modulating extended $s$-wave superconducting order. In contrast to conventional wisdom, we find that this phase crystal state is remarkably robust to omnipresent disorder, but only in the presence of strong correlations, thus giving a clear route to its experimental realization.

preprint2022arXiv

Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene

We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T > 1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with peak external quantum efficiency of ~ 85% for wavelengths 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ~50 fA translate into an estimated record high specific detectivity D = 3.5 x 10^15 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications.

preprint2022arXiv

Thermopower and thermophase in a $d$-wave superconductor

In an unconventional superconductor, the interplay of scattering off impurities and Andreev processes may lead to different scattering times for electronlike and holelike quasiparticles. Such electron-hole asymmetry appears when the impurity scattering phase shift is intermediate between the Born and unitary limits and leads to an expectation for large thermoelectric effects. Here, we examine the thermoelectric response of a $d$-wave superconductor connected to normal-metal reservoirs under a temperature bias using a fully self-consistent quasiclassical theory. The thermoelectrically induced quasiparticle current is cancelled by superflow in an open circuit setup, but at the cost of a charge imbalance induced at the contacts and extending across the structure. We investigate the resulting thermopower and thermophase and their dependencies on scattering phase shift, mean free path, and interface transparency. For crystal-axis orientations such that surface-bound zero-energy Andreev states are formed, the thermoelectric effect is reduced as a result of locally reduced electron-hole asymmetry. For a semiballistic superconductor with good contacts, we find thermopowers of order several $μV/K$, suggesting a thermovoltage measurement as a promising path to investigate thermoelectricity in unconventional superconductors.

preprint2020arXiv

Transport through vertical graphene contacts under intense laser fields

We theoretically study the electronic and transport properties of two graphene layers vertically coupled by an insulating layer under the influence of a time-periodic external light field. The non-adiabatic driving induces excitations of electrons and a redistribution of the occupied states which is manifested in the opening of gaps in the quasienergy spectrum of graphene. When a voltage is applied between the top and bottom graphene layers, the photo-induced nonequilibrium occupation modifies the transport properties of the contact. We investigate the electronic and transport properties of the contact by using the nonequilibrium Green's function formalism. To illustrate the behavior of the differential conductance of the vertical contact under the light illumination, we consider two cases. First, we assume that both the bottom and top layers consist of graphene and second we consider a finite mass term in the bottom layer. We obtain that the differential conductance is strongly suppressed due to the opening of gaps in the quasienergy spectrum in graphene. Additionally, the conductance shows features corresponding to the tunneling of photoexcited electrons at energies of the van Hove singularity for both the top and bottom layers. In the case of a finite mass term in the bottom layer, the differential conductance can be directly related to the tunneling of photoexcited electrons.