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Pascal Stadler

Pascal Stadler contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Deterministic Gaussian conversion protocols for non-Gaussian single-mode resources

In the context of quantum technologies over continuous variables, Gaussian states and operations are typically regarded as freely available, as they are relatively easily accessible experimentally. In contrast, the generation of non-Gaussian states, as well as the implementation of non-Gaussian operations, pose significant challenges. This divide has motivated the introduction of resource theories of non-Gaussianity. As for any resource theory, it is of practical relevance to identify free conversion protocols between resources, namely Gaussian conversion protocols between non-Gaussian states. Via systematic numerical investigations, we address the approximate conversion between experimentally relevant single-mode non-Gaussian states via arbitrary deterministic one-to-one mode Gaussian maps. First, we show that cat and binomial states are approximately equivalent for finite energy, while this equivalence was previously known only in the infinite-energy limit. Then we consider the generation of cat states from photon-added and photon-subtracted squeezed states, improving over known schemes by introducing additional squeezing operations. The numerical tools that we develop also allow to devise conversions of trisqueezed into cubic-phase states beyond previously reported performances. Finally, we identify various other conversions which instead are not viable.

preprint2022arXiv

Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene

We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T > 1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with peak external quantum efficiency of ~ 85% for wavelengths 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ~50 fA translate into an estimated record high specific detectivity D = 3.5 x 10^15 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications.

preprint2020arXiv

Transport through vertical graphene contacts under intense laser fields

We theoretically study the electronic and transport properties of two graphene layers vertically coupled by an insulating layer under the influence of a time-periodic external light field. The non-adiabatic driving induces excitations of electrons and a redistribution of the occupied states which is manifested in the opening of gaps in the quasienergy spectrum of graphene. When a voltage is applied between the top and bottom graphene layers, the photo-induced nonequilibrium occupation modifies the transport properties of the contact. We investigate the electronic and transport properties of the contact by using the nonequilibrium Green's function formalism. To illustrate the behavior of the differential conductance of the vertical contact under the light illumination, we consider two cases. First, we assume that both the bottom and top layers consist of graphene and second we consider a finite mass term in the bottom layer. We obtain that the differential conductance is strongly suppressed due to the opening of gaps in the quasienergy spectrum in graphene. Additionally, the conductance shows features corresponding to the tunneling of photoexcited electrons at energies of the van Hove singularity for both the top and bottom layers. In the case of a finite mass term in the bottom layer, the differential conductance can be directly related to the tunneling of photoexcited electrons.