Researcher profile

Todd Van Mechelen

Todd Van Mechelen contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Optical $N$-insulators: topological obstructions in the atomistic susceptibility tensor

A powerful result of topological band theory is that nontrivial phases manifest obstructions to constructing localized Wannier functions. In Chern insulators, it is impossible to construct Wannier functions that respect translational symmetry in both directions. Similarly, Wannier functions that respect time-reversal symmetry cannot be formed in quantum spin Hall insulators. This molecular orbital interpretation of topology has been enlightening and was recently extended to topological crystalline insulators which include obstructions tied to space group symmetries. In this article, we introduce a new class of two-dimensional topological materials known as optical $N$-insulators that possess obstructions to constructing localized molecular polarizabilities. The optical $N$-invariant $N\in\mathbb{Z}$ is the winding number of the atomistic susceptibility tensor $χ$ and counts the number of singularities in the electromagnetic linear response theory. We decipher these singularities by analyzing the optical band structure of the material -- the eigenvectors of the susceptibility tensor -- which constitutes the collection of optical Bloch functions. The localized basis of these eigenvectors are optical Wannier functions which represent the molecular polarizabilities at different lattice sites. We prove that in a nontrivial optical phase $N\neq 0$, such a localized polarization basis is impossible to construct. Utilizing the mathematical machinery of $K$-theory, these optical $N$-phases are refined further to account for the underlying crystalline symmetries of the material, generating a classification of the topological electromagnetic phase of matter.

preprint2019arXiv

Electron g-factor engineering for non-reciprocal spin photonics

We study the interplay of electron and photon spin in non-reciprocal materials. Traditionally, the primary mechanism to design non-reciprocal photonic devices has been magnetic fields in conjunction with magnetic oxides, such as iron garnets. In this work, we present an alternative paradigm that allows tunability and reconfigurability of the non-reciprocity through spintronic approaches. The proposed design uses the high-spin-orbit coupling of a narrow-band gap semiconductor (InSb) with ferromagnetic dopants. A combination of the intrinsic and a gate-applied electric field gives rise to a strong external Rashba spin-orbit coupling (RSOC) in a magnetically doped InSb film. The RSOC which is gate alterable is shown to adjust the magnetic permeability tensor via the electron g-factor of the medium. We use electronic band structure calculations (k$\cdot$p theory) to show the gate-adjustable RSOC manifest itself in the non-reciprocal coefficient of photon fields via shifts in the Kerr and Faraday rotations. In addition, we show that photon spin properties of dipolar emitters placed in the vicinity of a non-reciprocal electromagnetic environment is distinct from reciprocal counterparts. The Purcell factor (F$_{p}$) of a spin-polarized emitter (right-handed circular dipole) is significantly enhanced due to a larger g-factor while a left-handed dipole remains essentially unaffected. Our work can lead to electron spin controlled reconfigurable non-reciprocal photonic devices.