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Parijat Sengupta

Parijat Sengupta appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

13 published item(s)

preprint2020arXiv

Anomalous Lorenz number in massive and tilted Dirac systems

We analytically calculate the anomalous transverse electric and thermal currents in massive and tilted Dirac systems, using $ β$-borophene as a representative material, and report on conditions under which the corresponding Lorenz number $\left(\mathcal{L}_{an}\right)$ deviates from its classically accepted value $\left(\mathcal{L}_{0}\right)$. The deviations in the high-temperature regime are shown to be an outcome of the quantitative difference in the respective kinetic transport expressions for electric $\left(σ\right)$ and thermal $\left(κ\right)$ conductivity, and are further weighted through a convolution integral with a non-linearly energy-dependent Berry curvature that naturally arises in a Dirac material. In addition, the tilt and anisotropy of the Dirac system that are amenable to change via external stimulus are found to quantitatively influence $ \mathcal{L}_{an} $. The reported deviations from $\mathcal{L}_{0} $ hold practical utility inasmuch as they allow an independent tuning of $σ$ and $ κ$, useful in optimizing the output of thermoelectric devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electron g-factor engineering for non-reciprocal spin photonics

We study the interplay of electron and photon spin in non-reciprocal materials. Traditionally, the primary mechanism to design non-reciprocal photonic devices has been magnetic fields in conjunction with magnetic oxides, such as iron garnets. In this work, we present an alternative paradigm that allows tunability and reconfigurability of the non-reciprocity through spintronic approaches. The proposed design uses the high-spin-orbit coupling of a narrow-band gap semiconductor (InSb) with ferromagnetic dopants. A combination of the intrinsic and a gate-applied electric field gives rise to a strong external Rashba spin-orbit coupling (RSOC) in a magnetically doped InSb film. The RSOC which is gate alterable is shown to adjust the magnetic permeability tensor via the electron g-factor of the medium. We use electronic band structure calculations (k$\cdot$p theory) to show the gate-adjustable RSOC manifest itself in the non-reciprocal coefficient of photon fields via shifts in the Kerr and Faraday rotations. In addition, we show that photon spin properties of dipolar emitters placed in the vicinity of a non-reciprocal electromagnetic environment is distinct from reciprocal counterparts. The Purcell factor (F$_{p}$) of a spin-polarized emitter (right-handed circular dipole) is significantly enhanced due to a larger g-factor while a left-handed dipole remains essentially unaffected. Our work can lead to electron spin controlled reconfigurable non-reciprocal photonic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spin-valley coupled thermoelectric energy converter with strained honeycomb lattices

A caloritronic device setup is proposed that harnesses the intrinsic spin-valley locking of two-dimensional honeycomb lattices with graphene-like valleys, for instance, silicene and stanene. Combining first-principles and analytic calculations, we quantitatively show that when sheets of such materials are placed on a ferromagnetic substrate and held between two contacts at different temperatures, an interplay between the electron degrees-of-freedom of charge, spin, and valley arises. A manifestation of this interplay are finite charge, spin, and valley currents. Uniaxial strain that adjusts the buckling height in silicene-type of lattices, in conjunction with an applied electric field, is shown to further modulate the aforementioned currents. We link these calculations to a Seebeck-like thermopower generator and obtain expressions (and means to optimize them) for two spin-valley polarized performance metrics--the thermodynamic efficiency and thermoelectric figure of merit. A closing summary outlines possible enhancements to presented results through the inherent topological order and substrate-induced external Rashba spin-orbit coupling that exists in silicene-type materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the \textit{off-resonant} condition) does not excite electrons but rearranges the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe$_{2} $ to MoS$_{2} $; the spin Hall conductivity of WSe$_{2}$ was found to be larger.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The optical response of mono-layer transition metal dichalcogenides in a Kerr-type non-linear dielectric environment

We study the optical behaviour of an arrangement in which the interface between a linear and non-linear dielectric media is covered by an embedded mono-layer of transition metal dichalcogenides (TMDC). The optical behaviour is qualitatively obtained through transmission and reflection coefficients which are a function of the third order non-linear susceptibility of the Kerr-type dielectric and the inter-band optical conductivity of the TMDC mono-layer. The inter-band optical conductivity of the TMCD mono-layer is calculated using the Kubo formalism from linear response theory. In particular, we theoretically demonstrate that the optical response of this arrangement can be switched between total internal reflection and a normal transmission regime by controlling the intensity of the incident radiation. The reflection and transmission functions, additionally, are shown to be amenable to further control by altering the inter-band optical conductivity of the embedded TMDC mono-layer. The optical conductivity is an outcome of its energy dispersion; we specifically choose two TMDC mono-layers, MoS$_{2}$ and WSe$_{2}$, which have nearly identical dispersion parameters apart from a much stronger spin-orbit coupling in the latter. The stronger spin-orbit coupling in WSe$_{2}$ does not significantly alter the inter-band optical conductivity to manifest in an enhanced reflection spectrum. However, we find that application of an external perturbation such as strain could be effectively used to modulate the overall optical response. We conclude by offering a brief overview of the applicability of our proposed scheme in devices that employ an all-optical switching mechanism through optical bistability which is the hallmark of a non-linear dielectric.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gate-Voltage Tunability of Plasmons in Single and Multi-layer Graphene Structures: Analytical Description and Concepts for Terahertz Devices

The strong light-matter interaction in graphene over a broad frequency range has opened up a plethora of photonics applications of graphene. The goal of this paper is to present the voltage tunability of plasmons in gated single- and multi-layer graphene structures. Device concepts for plasmonic interconnects and antennas and their performance for THz communication are presented. For the first time, the role of gate voltage and the thickness of the gate dielectric on the characteristics of plasmon propagation in graphene are quantified by accounting for both the interface trap capacitance and the quantum capacitance. The gate voltage serves as a powerful knob to tweak the carrier concentration and allows building electrically reconfigurable terahertz devices. By optimizing the gate voltage to maximize the plasmon propagation length in a gated multi-layer graphene geometry, we derive simple scaling trends that give intuitive insight into device modeling and design.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Scattering times and mobility with localized impurities in topological insulator films

The zero gap surface states of a 3D-topological insulator host highly mobile Dirac fermions with spin locked to the momentum. The high mobility attributed to absence of back scattering is reduced in presence of impurities on the surface. In particular, we discuss and compare scattering times for localized impurities on the surface, scattering between states of opposite helicity located on different surfaces coupled through a hybridization potential, and the role of magnetic impurities. Magnetic impurities give rise to an additional spin suppression factor. The role of warped bands and its influence on topological factors that can enhance the overall surface mobility is examined.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The tuning of light-matter coupling and dichroism in graphene for enhanced absorption: Implications for graphene-based optical absorption devices

The inter-band optical absorption in graphene characterized by its fine-structure constant has a universal value of 2.3\% independent of the material parameters. However, for several graphene-based photonic applications, enhanced optical absorption in graphene is highly desired. In this work, we quantify the tunability of optical absorption in graphene via the Fermi level in graphene, angle of incidence of the incident polarized light, and the dielectric constant of the surrounding dielectric media in which graphene is embedded. The influence of impurities adsorbed on the surface of graphene on the Lorentzian broadening of the spectral function of the density of states is analytically evaluated within the equilibrium Green's function formalism. Finally, we compute the differential absorption of right and left circularly-polarized light in graphene that is uniaxially and optically strained. The preferential absorption or circular dichroism is investigated for armchair and zigzag strain.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunable chirality and circular dichroism of a topological insulator with $ C_{2v} $ symmetry as a function of Rashba and Dresselhaus parameters

Polarization-sensitive devices rely on meta-materials to exhibit varying degrees of absorption of light of a given handedness. The chiral surface states of a topological insulator(TI) selectively absorb right and left circularly polarized light in the vicinity of the Dirac cone reaching its maximum of unity at the $ Γ$ point. In this letter, we demonstrate that a band gap open TI with C$_{2v}$ symmetry which is represented through a combination of Rashba and Dresselhaus Hamiltonians alters the preferential absorption of left and right circularly polarized light allowing a smooth variation of the circular dichroism(CD). This variation in CD, reflected in a range of positive and negative values is shown to be a function of the Rashba and Dresselhaus coupling parameters. Additionally, we draw a parallel between the varying CD and the emerging field of valley-electronics in transition metal dichalcogenides and note the possibility of the chiral states as a basis toward quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Atomistic and continuum modeling of a zincblende quantum dot heterostructure

A multiscale approach was adopted for the calculation of confined states in self-assembled semiconductor quantum dots (QDs). While results close to experimental data have been obtained with a combination of atomistic strain and tight-binding (TB) electronic structure description for the confined quantum states in the QD, the TB calculation requires substantial computational resources. To alleviate this problem an integrated approach was adopted to compute the energy states from a continuum 8-band k.p Hamiltonian under the influence of an atomistic strain field. Such multi-scale simulations yield a roughly six-fold faster simulation. Atomic-resolution strain is added to the k.p Hamiltonian through interpolation onto a coarser continuum grid. Sufficient numerical accuracy is obtained by the multi-scale approach. Optical transition wavelengths are within 7% of the corresponding TB results with a proper splitting of p-type sub-bands. The systematically lower emission wavelengths in k.p are attributable to an underestimation of the coupling between the conduction and valence bands.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface and edge states of topological insulator nanostructures

Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as channel material for TI-based field effect transistors. While such a transistor offers superior terminal characteristics, they suffer from an inherent zero band gap problem. The absence of a band gap for the surface states prevents an easy turn-off mechanism. In this work, techniques that can be employed to easily open a band gap for the TI surface states is introduced. Two approaches are described: 1) Coating the surface states with a ferromagnet which has a controllable magnetization axis. The magnetization strength of the ferromagnet is incorporated as an exchange interaction term in the Hamiltonian. 2) An \textit{s}-wave superconductor, because of the proximity effect, when coupled to a 3D-TI opens a band gap on the surface. This TI-superconductor heterostructure is modeled using the Bogoliubov-de Gennes Hamiltonian. A comparison demonstrating the finite size effects on surface states of a 3D-TI and edge states of a CdTe/HgTe/CdTe-based 2D-TI is also presented. 3D-TI nanostructures can be reduced to dimensions as low as 10.0 $ \mathrm{nm} $ in contrast to 2D-TI structures which require a thickness of at least 100.0 $ \mathrm{nm} $. All calculations are performed using the continuum four-band k.p Hamiltonian.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The influence of proximity induced ferromagnetism, superconductivity and Fermi-velocity on evolution of Berry phase in Bi$_{2}$Se$_{3}$ topological insulator

Bi$_{2}$Se$_{3}$ is a well known 3D-topological insulators(TI) with a non-trivial Berry phase of $ \left(2n+1\right)π$ attributed to the topology of the band structure. The Berry phase shows non-topological deviations from $ \left(2n+1\right)π$ in presence of a perturbation that destroys time reversal symmetry and gives rise to a quantum system with massive Dirac fermions and finite band gap. Such a band gap opening is achieved on account of the exchange field of a ferromagnet or the intrinsic energy gap of a superconductor that influences the topological insulator surface states by virtue of the proximity effect. In this work Berry phase of such gapped systems with massive Dirac fermions is considered. Additionally, it is shown that the Berry phase for such a system also depends on the \textit{Fermi}-velocity of the surface states which can be tuned as a function of the TI film thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Design principles for HgTe based topological insulator devices

The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier(CdTe) and well-region(HgTe) are altered by replacing them with the alloy Cd$_{x}% $Hg$_{1-x}$Te of various stoichiometries, the critical width can be changed.The critical quantum well width is shown to depend on temperature, applied stress, growth directions and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields.

0 citations0 reviewsNo code linkedOpen access