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Rajib Rahman

Rajib Rahman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.atom-phphysics.comp-phphysics.app-ph

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Published work

36 published item(s)

preprint2021arXiv

Non-adiabatic quantum control of valley states in silicon

Non-adiabatic quantum effects, often experimentally observed in semiconductors nano-devices such as single-electron pumps operating at high frequencies, can result in undesirable and uncontrollable behaviour. However, when combined with the valley degree of freedom inherent to silicon, these unfavourable effects may be leveraged for quantum information processing schemes. By using an explicit time evolution of the Schrodinger equation, we study numerically non-adiabatic transitions between the two lowest valley states of an electron in a quantum dot formed in a SiGe/Si heterostructure. The presence of a single atomic layer step at the top SiGe/Si interface opens an anti-crossing in the electronic spectrum as the centre of the quantum dot is varied. We show that an electric field applied perpendicularly to the interface allows tuning of the anti-crossing energy gap. As a result, by moving the electron through this anti-crossing, and by electrically varying the energy gap, it is possible to electrically control the probabilities of the two lowest valley states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon

Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between electronic wavefunctions in quantum dot systems, as long as they occupy neighbouring dots. An alternative route is the exploration of superexchange - the coupling between remote spins mediated by a third idle electron that bridges the distance between quantum dots. We experimentally demonstrate direct exchange coupling and provide evidence for second neighbour mediated superexchange in a linear array of three single-electron spin qubits in silicon, inferred from the electron spin resonance frequency spectra. We confirm theoretically through atomistic modeling that the device geometry only allows for sizeable direct exchange coupling for neighbouring dots, while next nearest neighbour coupling cannot stem from the vanishingly small tail of the electronic wavefunction of the remote dots, and is only possible if mediated.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electron g-factor engineering for non-reciprocal spin photonics

We study the interplay of electron and photon spin in non-reciprocal materials. Traditionally, the primary mechanism to design non-reciprocal photonic devices has been magnetic fields in conjunction with magnetic oxides, such as iron garnets. In this work, we present an alternative paradigm that allows tunability and reconfigurability of the non-reciprocity through spintronic approaches. The proposed design uses the high-spin-orbit coupling of a narrow-band gap semiconductor (InSb) with ferromagnetic dopants. A combination of the intrinsic and a gate-applied electric field gives rise to a strong external Rashba spin-orbit coupling (RSOC) in a magnetically doped InSb film. The RSOC which is gate alterable is shown to adjust the magnetic permeability tensor via the electron g-factor of the medium. We use electronic band structure calculations (k$\cdot$p theory) to show the gate-adjustable RSOC manifest itself in the non-reciprocal coefficient of photon fields via shifts in the Kerr and Faraday rotations. In addition, we show that photon spin properties of dipolar emitters placed in the vicinity of a non-reciprocal electromagnetic environment is distinct from reciprocal counterparts. The Purcell factor (F$_{p}$) of a spin-polarized emitter (right-handed circular dipole) is significantly enhanced due to a larger g-factor while a left-handed dipole remains essentially unaffected. Our work can lead to electron spin controlled reconfigurable non-reciprocal photonic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Characterizing Si:P quantum dot qubits with spin resonance techniques

Quantum dots patterned by atomically precise placement of phosphorus donors in single crystal silicon have long spin lifetimes, advantages in addressability, large exchange tunability, and are readily available few-electron systems. To be utilized as quantum bits, it is important to non-invasively characterise these donor quantum dots post fabrication and extract the number of bound electron and nuclear spins as well as their locations. Here, we propose a metrology technique based on electron spin resonance (ESR) measurements with the on-chip circuitry already needed for qubit manipulation to obtain atomic scale information about donor quantum dots and their spin configurations. Using atomistic tight-binding technique and Hartree self-consistent field approximation, we show that the ESR transition frequencies are directly related to the number of donors, electrons, and their locations through the electron-nuclear hyperfine interaction.

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preprint2016arXiv

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on different bandgaps induced by vertical electric fields in the source, channel, and drain regions without any chemical doping. The performance of the transistor is evaluated by self-consistent quantum transport simulations. This device has several advantages: 1) ultra-low power (VDD=0.1V), 2) high performance (ION/IOFF>104), 3) steep subthreshold swing (SS<10mv/dec), and 4) electrically configurable between N-TFET and P-TFET post fabrication. Here, the operation principle of the BED-TFET and its performance sensitivity to the device design parameters are studied.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Design Rules for High Performance Tunnel Transistors from 2D Materials

Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical and chemical doping. In this work, design guidelines for both electrically and chemically doped 2D TFETs are provided using full band atomistic quantum transport simulations in conjunction with analytic modeling. Moreover, several 2D TFETs' performance boosters such as strain, source doping, and equivalent oxide thickness (EOT) are studied. Later on, these performance boosters are analyzed within a novel figure-of-merit plot (i.e. constant ON-current plot).

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Impact of Dimensionality on PN Junctions

Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present a dramatic difference in the electrostatics of PN junctions in lower dimensional systems, as against the well understood three dimensional systems. Reducing the dimensionality increases the fringing fields and depletion width significantly. We propose a novel method to derive analytic equations in 2D and 1D that considers the impact of neutral regions. The analytical results show an excellent match with both the experimental measurements and numerical simulations. The square root dependence of the depletion width on the ratio of dielectric constant and doping in 3D changes to a linear and exponential dependence for 2D and 1D respectively. This higher sensitivity of 1D PN junctions to its control parameters can be used towards new sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass

Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and drain which degrades gate control, switching functionality, and worsens power dissipation. Fortunately, the emergence of novel classes of materials with exotic properties in recent times has opened up new avenues in device design. Here, we show that by using channel materials with an anisotropic effective mass, the channel can be scaled down to 1nm and still provide an excellent switching performance in both MOSFETs and TFETs. In the case of TFETs, a novel design has been proposed to take advantage of anisotropic mass in both ON- and OFF-state of the TFETs. Full-band atomistic quantum transport simulations of phosphorene nanoribbon MOSFETs and TFETs based on the new design have been performed as a proof.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel doping in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -- the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of sub-surface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions

The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental non-idealities, including variability of donor position within the chain. We show that the tolerance against donor placement inaccuracies is greatly improved by operating the spin chain in a mode where the electrons are confined at the Si-SiO$_2$ interface. We then estimate the required timescales and exchange couplings, and the level of noise that can be tolerated to achieve high fidelity transport. We also propose a protocol to calibrate and initialize the chain, thereby providing a complete guideline for realizing a functional donor chain and utilizing it for spin transport.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations

A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: 1) the potential profile from source to channel, and 2) the elliptic curvature of the complex bands in the bandgap region. It is proposed to use 1D Poisson's equations in the source and the channel to describe the potential profile in homojunction TFETs. This allows to quantify the impact of source/drain doping on device performance, an aspect usually ignored in TFET modeling but highly relevant in ultra-scaled devices. The compact model is validated by comparison with state-of-the-art quantum transport simulations using a 3D full band atomistic approach based on Non-Equilibrium Green's Functions (NEGF). It is shown that the model reproduces with good accuracy the data obtained from the simulations in all regions of operation: the on/off states and the n/p branches of conduction. This approach allows calculation of energy-dependent band-toband tunneling currents in TFETs, a feature that allows gaining deep insights into the underlying device physics. The simplicity and accuracy of the approach provides a powerful tool to explore in a quantitatively manner how a wide variety of parameters (material-, size- and/or geometrydependent) impact the TFET performance under any bias conditions. The proposed model presents thus a practical complement to computationally expensive simulations such as the 3D NEGF approach.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Bulk and sub-surface donor bound excitons in silicon under electric fields

The electronic structure of the three-particle donor bound exciton (D$^0$X) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approximation. The calculations yield a transition energy close to the experimentally measured value of 1150 meV in bulk, and show how the transition energy and transition probability can change with applied fields and proximity to surfaces, mimicking the conditions of realistic devices. The spin-resolved transition energy from a neutral donor state (D$^0$) to D$^0$X depends on the three-particle Coulomb energy, and the interface and electric field induced hyperfine splitting and heavy-hole-light-hole splitting. Although the Coulomb energy decreases as a result of Stark shift, the spatial separation of the electron and hole wavefunctions by the field also reduces the transition dipole. A bulk-like D$^0$X dissociates abruptly at a modest electric field, while a D$^0$X at a donor close to an interface undergoes a gradual ionization process. Our calculations take into account the full bandstructure of silicon and the full energy spectrum of the donor including spin directly in the atomic orbital basis and treat the three-particle Coulomb interaction self-consistently to provide quantitative guidance to experiments aiming to realize hybrid opto-electric techniques for addressing donor qubits.

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preprint2015arXiv

Can Tunnel Transistors Scale Below 10nm?

The main promise of tunnel FETs (TFETs) is to enable supply voltage ($V_{DD}$) scaling in conjunction with dimension scaling of transistors to reduce power consumption. However, reducing $V_{DD}$ and channel length ($L_{ch}$) typically deteriorates the ON- and OFF-state performance of TFETs, respectively. Accordingly, there is not yet any report of a high perfor]mance TFET with both low V$_{DD}$ ($\sim$0.2V) and small $L_{ch}$ ($\sim$6nm). In this work, it is shown that scaling TFETs in general requires scaling down the bandgap $E_g$ and scaling up the effective mass $m^*$ for high performance. Quantitatively, a channel material with an optimized bandgap ($E_g\sim1.2qV_{DD} [eV]$) and an engineered effective mass ($m*^{-1}\sim40 V_{DD}^{2.5} [m_0^{-1}]$) makes both $V_{DD}$ and $L_{ch}$ scaling feasible with the scaling rule of $L_{ch}/V_{DD}=30~nm/V$ for $L_{ch}$ from 15nm to 6nm and corresponding $V_{DD}$ from 0.5V to 0.2V.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dielectric Engineered Tunnel Field-Effect Transistor

The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the band gap which typically deteriorate the OFF-state performance and SS in conventional TFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electrically controlling single spin qubits in a continuous microwave field

Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Engineering inter-qubit exchange coupling between donor bound electrons in silicon

We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qubit gate in a silicon quantum computer. We find the asymmetric 2P-1P system provides a highly tunable exchange-curve with mitigated J-oscillation, in which 5 orders of magnitude change in the exchange energy can be achieved using a modest range of electric field for 15 nm qubit separation. Compared to the barrier gate control of exchange in the Kane qubit, the detuning gate design reduces the demanding constraints of precise donor separation, gate width, density and location, as a range of J spanning over a few orders of magnitude can be engineered for various donor separations. We have combined a large-scale full band atomistic tight-binding method with a full configuration interaction technique to capture the full two-electron spectrum of gated donors, providing state-of-the-art calculations of exchange energy in 1P-1P and 2P-1P qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m*) outside the optimum range needed for high performance. It is shown here that the newly discovered 2D material, few-layer phosphorene, has several properties ideally suited for TFET applications: 1) direct Eg in the optimum range ~1.0-0.4 eV, 2) light transport m* (0.15m0), 3) anisotropic m* which increases the density of states near the band edges, and 4) a high mobility. These properties combine to provide phosphorene TFET outstanding ION 1 mA/um, ON/OFF ratio~1e6, scalability to 6 nm channel length and 0.2 V supply voltage, thereby significantly outperforming the best TMD-TFETs in energy-delay products. Full-band atomistic quantum transport simulations establish phosphorene TFETs as serious candidates for energy-eficient and scalable replacements of MOSFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling

In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (TFETs) based on direct bandgap semiconductors. The model provides closed-form expressions for I-V based on: 1) a modified version of the well-known Fowler-Nordheim (FN) formula (in the ON-state), and 2) an equation which describes the OFF-state performance while providing continuity at the ON/OFF threshold by means of a term introduced as the "continuity factor". It is shown that traditional approaches such as FN are accurate in TFETs only through correct evaluation of the total band bending distance and the "tunneling effective mass". General expressions for these two key parameters are provided. Moreover, it is demonstrated that the tunneling effective mass captures both the ellipticity of evanescent states and the dual (electron/hole) behavior of the tunneling carriers, and it is further shown that such a concept is even applicable to semiconductors with nontrivial energy dispersion. Ultimately, it is found that the I-V characteristics obtained by using this model are in close agreement with state-of-the-art quantum transport simulations both in the ON- and OFF-state, thus providing validation of the analytic approach.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Scaling Theory of Electrically Doped 2D Transistors

In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the concept of equivalent oxide thickness (EOT) is not applicable anymore. Hence, a novel scaling theory is developed based on analytic solutions of the 2D Poisson equation. Full band atomistic quantum transport simulations verify the theory and show that the critical design parameters are the physical oxide thickness and distance between the gates. Accordingly, the most optimized electrically doped devices are those with the smallest spacing between the gates and the thinnest oxide, and not the smallest EOT.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-lattice relaxation times of single donors and donor clusters in silicon

An atomistic method of calculating the spin-lattice relaxation times ($T_1$) is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes into account the full band structure of silicon including the spin-orbit interaction. The electron-phonon Hamiltonian, and hence the deformation potential, is directly evaluated from the strain-dependent tight-binding Hamiltonian. The technique is applied to single donors and donor clusters in silicon, and explains the variation of $T_1$ with the number of donors and electrons, as well as donor locations. Without any adjustable parameters, the relaxation rates in a magnetic field for both systems are found to vary as $B^5$ in excellent quantitative agreement with experimental measurements. The results also show that by engineering electronic wavefunctions in nanostructures, $T_1$ times can be varied by orders of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon

Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fields in realistically sized devices. We establish and apply a theoretical framework, based on atomistic tight-binding theory, to quantitatively determine the strain and electric field dependent hyperfine couplings of donors. Our method is scalable to millions of atoms, and yet captures the strain effects with an accuracy level of DFT method. Excellent agreement with the available experimental data sets allow reliable investigation of the design space of multi-qubit architectures, based on both strain-only as well as hybrid (strain+field) control of qubits. The benefits of strain are uncovered by demonstrating that a hybrid control of qubits based on (001) compressive strain and in-plane (100 or 010) fields results in higher gate fidelities and/or faster gate operations, for all of the four donor species considered (P, As, Sb, and Bi). The comparison between different donor species in strained environments further highlights the trends of hyperfine shifts, providing predictions where no experimental data exists. Whilst faster gate operations are realisable with in-plane fields for P, As, and Sb donors, only for the Bi donor, our calculations predict faster gate response in the presence of both in-plane and out-of-plane fields, truly benefiting from the proposed planar field control mechanism of the hyperfine interactions.

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preprint2015arXiv

Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots

A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate prediction of the optical transitions in these devices . The optimized models presented in this paper are able to reproduce the experimental results with an error less than 1$\%$. The effects of incident light polarization, alloy mole fraction, quantum dot dimensions, and doping have been investigated. The in-plane polarized light absorption is more significant than the perpendicularly polarized light absorption. Increasing the mole fraction of the strain controlling layer leads to a lower energy gap and larger absorption wavelength. Surprisingly, the absorption wavelength is highly sensitive to changes in the dot diameter, but almost insensitive to changes in the dot height. This unpredicted behavior is explained by sensitivity analysis of different factors which affect the optical transition energy.

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preprint2015arXiv

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain doping level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices.

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preprint2015arXiv

Universal Behavior of Strain in Quantum Dots

Self-assembled quantum dots (QDs) are highly strained heterostructures. the lattice strain significantly modifies the electronic and optical properties of these devices. A universal behavior is observed in atomistic strain simulations (in terms of both strain magnitude and profile) of QDs with different shapes and materials. In this paper, this universal behavior is investigated by atomistic as well as analytic continuum models. Atomistic strain simulations are very accurate but computationally expensive. On the other hand, analytic continuum solutions are based on assumptions that significantly reduce the accuracy of the strain calculations, but are very fast. Both techniques indicate that the strain depends on the aspect ratio (AR) of the QDs, and not on the individual dimensions. Thus simple closed form equations are introduced which directly provide the atomistic strain values inside the QD as a function of the AR and the material parameters. Moreover, the conduction and valence band edges $E_{C/V}$ and their effective masses $m^*_{C/V}$ of the QDs are dictated by the strain and AR consequently. The universal dependence of atomistic strain on the AR is useful in many ways; Not only does it reduce the computational cost of atomistic simulations significantly, but it also provides information about the optical transitions of QDs given the knowledge of $E_{C/V}$ and $m^*_{C/V}$ from AR. Finally, these expressions are used to calculate optical transition wavelengths in InAs/GaAs QDs and the results agree well with experimental measurements and atomistic simulations.

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preprint2014arXiv

Coherent Control of a Single Silicon-29 Nuclear Spin Qubit

Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of $T_2 = 6.3(7)$ ms - in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the $^{29}$Si atom under investigation. These results demonstrate that single $^{29}$Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer.

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preprint2014arXiv

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric screening of the donor potential tunes the value of the quadratic Stark shift parameter ($η_2$) from -1.3 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the static dielectric screening to -1.72 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the non-static dielectric screening. The effect of lattice strain, implemented by a 3.2% change in the As-Si nearest-neighbour bond length, further shifts the value of $η_2$ to -1.87 $\times$ 10$^{-3} μ$m$^2$/V$^2$, resulting in an excellent agreement of theory with the experimentally measured value of -1.9 $\pm$ 0.2 $\times$ 10$^{-3} μ$m$^2$/V$^2$. Based on our direct comparison of the calculations with the experiment, we conclude that the previously ignored non-static dielectric screening of the donor potential and the lattice strain significantly influence the donor wave function charge density and thereby leads to a better agreement with the available experimental data sets.

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preprint2012arXiv

A many-electron tight binding method for the analysis of quantum dot systems

We present a method which computes many-electron energies and eigenfunctions by a full configuration interaction which uses a basis of atomistic tight-binding wave functions. This approach captures electron correlation as well as atomistic effects, and is well suited to solid state quantum dot systems containing few electrons, where valley physics and disorder contribute significantly to device behavior. Results are reported for a two-electron silicon double quantum dot as an example.

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preprint2012arXiv

SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge

We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/Si quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

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preprint2011arXiv

Voltage controlled exchange energies of a two electron silicon double quantum dot with and without charge defects in the dielectric

Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double quantum dots (DQD) represents a system that is very sensitive to charge position and is of interest for quantum computing. We calculate the energy spectrum of the silicon double quantum dot system using a full configuration interaction that uses tight binding single particle wavefunctions. This approach allows us to analyze atomic scale charge perturbations of the DQD while accounting for the details of the complex momentum space physics of silicon (i.e., valley and valley-orbit physics). We analyze how the energy levels and exchange curves for a DQD are affected by nearby charge defects at various positions relative to the dot, which are consistent with defects expected in the metal-oxide-semiconductor system.

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preprint2010arXiv

Coherent electron transport by adiabatic passage in an imperfect donor chain

Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for CTAP is affected by donor misplacements, and propose schemes to correct for such errors. We also investigate the sensitivity of the adiabatic path to gate voltage fluctuations. The tight-binding based atomistic treatment of straggle used here may benefit understanding of other donor nanostructures, such as donor-based charge and spin qubits. Finally, we derive an effective 3 \times 3 model of CTAP that accurately resembles the voltage tuned lowest energy states of the multi-million atom tight-binding simulations, and provides a translation between intensive atomistic Hamiltonians and simplified effective Hamiltonians while retaining the relevant atomic-scale information. This method can help characterize multi-donor experimental structures quickly and accurately even in the presence of imperfections, overcoming some of the numeric intractabilities of finding optimal eigenstates for non-ideal donor placements.

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preprint2009arXiv

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

A solid-state analogue of Stimulated Raman Adiabatic Passage can be implemented in a triple well solid-state system to coherently transport an electron across the wells with exponentially suppressed occupation in the central well at any point of time. Termed coherent tunneling adiabatic passage (CTAP), this method provides a robust way to transfer quantum information encoded in the electronic spin across a chain of quantum dots or donors. Using large scale atomistic tight-binding simulations involving over 3.5 million atoms, we verify the existence of a CTAP pathway in a realistic solid-state system: gated triple donors in silicon. Realistic gate profiles from commercial tools were combined with tight-binding methods to simulate gate control of the donor to donor tunnel barriers in the presence of cross-talk. As CTAP is an adiabatic protocol, it can be analyzed by solving the time independent problem at various stages of the pulse - justifying the use of time-independent tight-binding methods to this problem. Our results show that a three donor CTAP transfer, with inter-donor spacing of 15 nm can occur on timescales greater than 23 ps, well within experimentally accessible regimes. The method not only provides a tool to guide future CTAP experiments, but also illuminates the possibility of system engineering to enhance control and transfer times.

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preprint2009arXiv

Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors

The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.

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preprint2009arXiv

Mapping donor electron wave function deformations at sub-Bohr orbit resolution

Quantum wave function engineering of dopant-based Si nano-structures reveals new physics in the solid-state, and is expected to play a vital role in future nanoelectronics. Central to any fundamental understanding or application is the ability to accurately characterize the deformation of the electron wave functions in these atom-based structures through electromagnetic field control. We present a method for mapping the subtle changes that occur in the electron wave function through the measurement of the hyperfine tensor probed by 29Si impurities. Our results show that detecting the donor electron wave function deformation is possible with resolution at the sub-Bohr radius level.

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preprint2009arXiv

Orbital Stark effect and quantum confinement transition of donors in silicon

Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport spectroscopy experiment for the first time was able to probe the Stark shifted spectrum of a single donor in silicon buried close to a gate. Here we present the full theoretical model involving large-scale quantum mechanical simulations that was used to compute the Stark shifted donor states in order to interpret the experimental data. Use of atomistic tight-binding technique on a domain of over a million atoms helped not only to incorporate the full band structure of the host, but also to treat realistic device geometries and donor models, and to use a large enough basis set to capture any number of donor states. The method yields a quantitative description of the symmetry transition that the donor electron undergoes from a 3D Coulomb confined state to a 2D surface state as the electric field is ramped up adiabatically. In the intermediate field regime, the electron resides in a superposition between the states of the atomic donor potential and that of the quantum dot like states at the surface. In addition to determining the effect of field and donor depth on the electronic structure, the model also provides a basis to distinguish between a phosphorus and an arsenic donor based on their Stark signature. The method also captures valley-orbit splitting in both the donor well and the interface well, a quantity critical to silicon qubits. The work concludes with a detailed analysis of the effects of screening on the donor spectrum.

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preprint2009arXiv

Stark tuning of the charge states of a two-donor molecule in silicon

Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed donor separations and operating gate voltages. The effects of surface (S) and barrier (B) gates are analyzed in various voltage regimes with respect to the quantum confined states of the whole device. Effects such as interface ionization, saturation of the tunnel coupling, sensitivity to donor and gate placement are also studied. It is found that realistic gate control is smooth for any donor separation, although at certain donor orientations the S and B gates may get switched in functionality. This paper outlines and analyzes the various issues that are of importance in practical control of such donor molecular systems.

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preprint2007arXiv

High precision quantum control of single donor spins in silicon

The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision measurements. The TB electronic structure calculations included over 3 million atoms. In contrast to previous effective mass based results, the quadratic Stark coefficient obtained from both theories agrees closely with the experiments. This work represents the most sensitive and precise comparison between theory and experiment for single donor spin control. It is also shown that there is a significant linear Stark effect for an impurity near the interface, whereas, far from the interface, the quadratic Stark effect dominates. Such precise control of single donor spin states is required particularly in quantum computing applications of single donor electronics, which forms the driving motivation of this work.

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