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Researcher profile

Tillmann Kubis

Tillmann Kubis contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.comp-ph

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Published work

5 published item(s)

preprint2020arXiv

Introducing Open boundary conditions in modeling nonperiodic materials and interfaces: the impact of the periodic assumption

Simulations are essential to accelerate the discovery of new materials and to gain full understanding of known ones. Although hard to realize experimentally, periodic boundary conditions are omnipresent in material simulations. In this work, we intro-duce ROBIN (recursive open boundary and interfaces), the first method allowing open boundary conditions in material and interface modeling. The computational costs are limited to solving quantum properties in a focus area which allows explicitly discretizing millions of atoms in real space and to consider virtually any type of environment (be it periodic, regular, or ran-dom). The impact of the periodicity assumption is assessed in detail with silicon dopants in graphene. Graphene was con-firmed to produce a band gap with periodic substitution of 3% carbon with silicon in agreement with published periodic boundary condition calculations. Instead, 3% randomly distributed silicon in graphene only shifts the energy spectrum. The predicted shift agrees quantitatively with published experimental data. Key insight of this assessment is, assuming periodici-ty elevates a small perturbation of a periodic cell into a strong impact on the material property prediction. Periodic boundary conditions can be applied on truly periodic systems only. More general systems should apply an open boundary method for reliable predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Introduction of Multi-particle Büttiker Probes -- Bridging the Gap between Drift Diffusion and Quantum Transport

State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the non-equilibrium Green's function (NEGF) method that cover all coherent and incoherent quantum effects consistently. Carrier recombination and generation in optoelectronic nanodevices represent an immense numerical challenge when solved within NEGF. In this work, the numerically efficient Büttiker-probe model is expanded to include electron-hole recombination and generation in the NEGF framework. Benchmarks of the new multiple-particle Büttiker probe method against state-of-the-art quantum-corrected DD models show quantitative agreements except in cases of pronounced tunneling and interference effects.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mode-space-compatible inelastic scattering in atomistic nonequilibrium Green's function implementations

The nonequilibrium Green's function (NEGF) method is often used to predict transport in atomistically resolved nanodevices and yields an immense numerical load when inelastic scattering on phonons is included. To ease this load, this work extends the atomistic mode space approach of Ref. [1] to include inelastic scattering on optical and acoustic phonons in silicon nanowires. This work also includes the exact calculation of the real part of retarded scattering self-energies in the reduced basis representation using the Kramers-Kronig relations. The inclusion of the Kramers-Kronig relation for the real part of the retarded scattering self-energy increases the impact of scattering. Virtually perfect agreement with results of the original representation is achieved with matrix rank reductions of more than 97%. Time-to-solution improvements of more than 200$\times$ and peak memory reductions of more than 7$\times$ are shown. This allows for the solution of electron transport scattered on phonons in atomically resolved nanowires with cross-sections larger than 5 nm $\times$ 5 nm.

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preprint2019arXiv

Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations

The non-equilibrium Green's function (NEGF) method with Büttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of Si/heavy-Si is considered, where heavy-Si differs from Si only in the mass value. With Büttiker probe scattering parameters tuned against MD in homogeneous Si, the NEGF-predicted thermal boundary resistance quantitatively agrees with MD for wide mass ratios. Artificial resistances that the unaltered Landauer approach yield at virtual interfaces in homogeneous systems are absent in the present NEGF approach. Spectral information result from NEGF in its natural representation without further transformations. The spectral results show that the scattering between different phonon modes plays a crucial role in thermal transport across interfaces. Büttiker probes provide an efficient and reliable way to include anharmonicity in phonon related NEGF. NEGF including the Büttiker probes can reliably predict phonon transport across interfaces and at finite temperatures.

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preprint2012arXiv

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters. The traditional way of obtaining the ETB parameters is by fitting to experiment data, or critical theoretical bandedges and symmetries rather than a foundational mapping. A further shortcoming of traditional ETB is the lack of an explicit basis. In this work, a DFT mapping process which constructs TB parameters and explicit basis from DFT calculations is developed. The method is applied to two materials: GaAs and MgO. Compared with the existing TB parameters, the GaAs parameters by DFT mapping show better agreement with the DFT results in bulk band structure calculations and lead to different indirect valleys when applied to nanowire calculations. The MgO TB parameters and TB basis functions are also obtained through the DFT mapping process.

0 citations0 reviewsNo code linkedOpen access