Researcher profile

Michael Povolotskyi

Michael Povolotskyi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation

The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band atomistic NEGF approach, including scattering, is required to model the carrier transport accurately. However, such simulations for devices with realistic dimensions are computationally unfeasible. To mitigate this issue, we have employed the empirical tight-binding mode space approximation to simulate triple heterojunction TFETs with the body thickness up to 12 nm. The triple heterojunction TFET design is optimized using the model to achieve a sub-60mV/dec transfer characteristic under realistic scattering conditions.

preprint2012arXiv

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters. The traditional way of obtaining the ETB parameters is by fitting to experiment data, or critical theoretical bandedges and symmetries rather than a foundational mapping. A further shortcoming of traditional ETB is the lack of an explicit basis. In this work, a DFT mapping process which constructs TB parameters and explicit basis from DFT calculations is developed. The method is applied to two materials: GaAs and MgO. Compared with the existing TB parameters, the GaAs parameters by DFT mapping show better agreement with the DFT results in bulk band structure calculations and lead to different indirect valleys when applied to nanowire calculations. The MgO TB parameters and TB basis functions are also obtained through the DFT mapping process.