Researcher profile

Tianxing Ma

Tianxing Ma contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2022arXiv

Doping-dependent metal-insulator transition in a disordered Hubbard model

We study the effect of disorder and doping on the metal-insulator transition in a repulsive Hubbard model on a square lattice using the determinant quantum Monte Carlo method. First, with the aim of making our results reliable, we compute the sign problem with various parameters such as temperature, disorder, on-site interactions, and lattice size. We show that in the presence of randomness in the hopping elements, the metal-insulator transition occurs and the critical disorder strength differs at different fillings. We also demonstrate that doping is a driving force behind the metal-insulator transition.

preprint2022arXiv

Enhancement of $d$-wave pairing in the striped phase with the nearest neighbour attraction

Recently, the experimental results by the angle-resolved photoemission spectroscopy suggested that an additional strong nearest neighbor attraction in the Hubbard model might be significant to describe the properties of doped cuprates more accurately. The stripe-ordered patterns, formed by the inhomogeneous distribution of spin, charge and pairing correlations in the CuO$_{2}$ planes, is a known feature of doped cuprates. In this work, the effect of the nearest neighbor attraction and the stripe phase are examined by using the constrained path quantum Monte Carlo method within the repulsive Hubbard model on two-dimensional square lattice. The ground state spin correlations along and cross the stripe regions, and the $d$-wave pairing correlation are calculated. It is found that the spin-spin correlation is the highest when the interstripe region is fairly close to half-filling, and $d$-wave superconducting correlation on neighboring sites could be enhanced in the presence of stripe pattern and strong nearest neighbor attraction, which reveals their crucial roles on superconductivity in the doped cuprates.

preprint2022arXiv

Josephson radiation patterns in underdamped topological Josephson junctions

Josephson radiation is a useful signature for detecting Majorana zero modes in topological superconductors. We study the Josephson radiation of the underdamped topological Josephson junction within the quantum resistively and capacitively shunted junction model. We show that the quantum dynamics of the Majorana two-level system induce oscillatory patterns in the Josephson emission spectra. With the Floquet method, we obtain analytical results for these oscillatory patterns and find that they are well described by Bessel functions. We perform numerical simulations to verify the analytical results and demonstrate that these Bessel radiation patterns exist for a wide range of junction parameters.

preprint2022arXiv

Magnetic phase transition in disordered interacting Dirac fermion systems via the Zeeman field

Using the determinant quantum Monte Carlo method, we investigate the antiferromagnetic phase transition that is induced by the Zeeman field in a disordered interacting two-dimensional Dirac fermion system. At a fixed interaction strength $U$, the antiferromagnetic correlation is enhanced as the magnetic filed increases, and when the magnetic field is larger than a $B_{c}(U)$, the antiferromagnetic correlation shall be suppressed by the increased magnetic field. The impact of Zeeman field $B$, Coulomb repulsion $U$ and disorder $Δ$ is not isolated. The intensity of magnetic field effect on the antiferromagnetic correlation shall be strongly suppressed by disorder. Differently, it will be promoted by weak interaction, but when $U$ becomes larger than $U_{c}=4.5$, the increased interaction will suppress the intensity of this effect, and here $U_{c}=4.5$ coincides with the critical strength inducing the metal-Mott insulator transition in clean system. Moreover, at a fixed magnetic field $B$, strong interaction shall suppress the antiferromagnetic phase rather than promote it.

preprint2022arXiv

Phase diagram of the Hubbard model on a honeycomb lattice: A cluster slave-spin study

The cluster slave-spin method is implemented to research the ground state properties of the honeycomb lattice Hubbard model with doping $δ$ and coupling $U$ being its parameters. At half-filling, a single direct and continuous phase transition between the semi-metal and antiferromagnetic (AFM) insulator is found at $U_{\text{AFM}}=2.43t$ that is in the Gross-Neveu-Yukawa universality class, where a relation between the staggered magnetization $M$ and the AFM energy gap $Δ_{\text{AFM}}$ is established as $M \propto Δ_{\text{AFM}}$, compared to $M \propto Δ_{\text{AFM}} ( \ln{Δ_{\text{AFM}}})^2$ in the square lattice case. A first-order semi-metal to the underlying paramagnetic (PM) insulator Mott transition is corroborated at $U_{\text{Mott}}=8.36t$, which is responsible for a broad crossover around $U_{c} = 5.4t$ between the weak- and strong-coupling regimes in the AFM state that increases with $δ$, in contrast to the square lattice case. In the doped system, the compressibility $κ$ near the van Hove singularity at $δ=1/4$ is suppressed substantially by the interaction before the semi-metal to AFM transition occurs, whereas $κ$ near the Dirac points is very close to the noninteracting one, indicating that the Dirac cone structure of the energy dispersion is rather robust. An overall phase diagram in the $U$-$δ$ plane is presented, consisting of four regimes: the AFM insulator at $δ=0$ for $U> U_{\text{AFM}}$, the AFM metal with compressibility $κ>0$ or $κ<0$, and the PM semi-metal, and the AFM metal with $κ<0$ only exists in an extremely small area near the phase boundary between the AFM and PM state.

preprint2021arXiv

Doping-driven Antiferromagnetic Insulator -- Superconductor Transition: a Quantum Monte Carlo Study

How superconductivity emerges in the vicinity of an antiferromagnetic insulating state is a long-standing issue of strong correlation physics. We study the transition from an antiferromagnetic insulator to a superconductor by hole-doping based on a bilayer generalization of a Hubbard-like model. The projector quantum Monte-Carlo simulations are employed, which are sign-problem-free both at and away from half-filling. An anisotropic Ising antiferromagnetic Mott insulating phase occurs at half-filling, which is weakened by hole-doping. Below a critical doping value, antiferromagnetism coexists with the singlet superconductivity, which is a pairing across each rung with an extended $s$-wave symmetry. As further increasing doping, the antiferromagnetic order vanishes, leaving only a superconducting phase. These results provide important information on how superconductivity appears upon doping the parent Mott-insulating state.

preprint2020arXiv

Intermediate Phase in Interacting Dirac Fermions with Staggered Potential

By performing exact quantum Monte Carlo simulations of a model of interacting Dirac Fermions with staggered potential, we reveal a novel intermediate phase where the electronic correlations drive a band insulator metallic, and at a larger interaction, drive the metal to Mott insulator. We also show that the Mott insulating phase is antiferromagnetic. A complete phase diagram is achieved by studying the phase transitions at large staggered potential and interaction strengths, which shows that the intermediate state is robust and occupies a large part of the phase diagram and that it should be more feasible to be detected experimentally.

preprint2020arXiv

Metal-insulator transition and dominant $d+id$ pairing symmetry in twisted bilayer graphene

Motivated by recent experimental studies that have found signatures of a correlated insulator phase and tuning superconductivity in twisted bilayer graphene, we study the temperature-dependent conductivity, the spin correlation and the superconducting pairing correlation within a two-orbital Hubbard model on an emergent honeycomb lattice. The evaluation of the temperature dependence of the conductivity demonstrates that there is a metal-insulator transition, and the Mott phase at strong coupling is accompanied by antiferromagnetic order. The electronic correlation drives a $d+id$ superconducting pairing to be dominant over a wide filling region. All of the dc conductivity, the spin correlation and the superconductivity are suppressed as the interlayer coupling strength increases, and the critical $U_c$ for the metal-insulator transition is also reduced. Our intensive numerical results reveal that twisted bilayer graphene should be a uniquely tunable platform for exploring strongly correlated phenomena.

preprint2019arXiv

Quantum confinement and edge effects on electronic properties of zigzag green phosphorene nanoribbons

First principles density-functional theory calculations were performed to investigate quantum confinement and edge effects on the electronic properties of zigzag green phosphorene nanoribbons (ZGPNRs) with edge chemical species including H, OH, F, Cl, O, and S for the ribbons width in the range of 0.5 \~{} 3.7 nm. The ZGPNRs were obtained from the relaxed two-dimensional (2D) green phosphorene monolayer with different cutting strategies and the most energetically favorable ribbon configuration was selected for further exploration of the size and edge effects. It was found that the electronic properties of the ZGPNRs are strongly associated with the ribbon width and edge chemical species. They show either semiconducting or metallic features depending on the edge functionalization species. The ZGPNRs show semiconducting behavior with the edge species of H, OH, F, or Cl (Group \uppercase\expandafter{\romannumeral1}), while exhibit metallic characteristics with pristine or O, S edges (Group \uppercase\expandafter{\romannumeral2}). The conduction band minimum (CBM) and valence band maximum (VBM) of the ZGPNRs with the Group \uppercase\expandafter{\romannumeral1} edge are primarily located at the inner P atoms and the edge P and functionalization atoms have little contribution. However, for the Group \uppercase\expandafter{\romannumeral2} edge, the electronic bands crossing the Fermi level are dominantly contributed by the edge atoms. It was also found that the band gap and work function of the ZGPNRs are tunable by varying ribbon width and edge functionalization species.