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Tian-Yi Cai

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cond-mat.mes-hall cond-mat.mtrl-sci physics.comp-ph

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preprint2020arXiv

Two-dimensional transition metal oxides Mn2O3 realized quantum anomalous Hall effect

The quantum anomalous Hall effect is a intriguing topological nontrivial phase arising from spontaneous magnetization and spin-orbit coupling. However, the tremendously harsh realizing requirements of the quantum anomalous Hall effects in magnetic topological insulators of Cr or V-doped (Bi,Sb)2Te3 film, hinder its practical applications. Here, we use first principles calculations to predict that the three Mn2O3 structure is an intrinsic ferromagnetic Chern insulator. Remarkably, a quantum anomalous Hall phase of Chern number C = -2 is found, and there are two corresponding gapless chiral edge states appearing inside the bulk gap. More interestingly, only a small tensile strain is needed to induce the phase transition from Cmm2 and C222 phase to P6/mmm phase. Meanwhile, a topological quantum phase transition between a quantum anomalous Hall phase and a trivial insulating phase can be realize. The combination of these novel properties renders the two-dimensional ferromagnet a promising platform for high effciency electronic and spintronic applications.

preprint2019arXiv

Fully spin-polarized quadratic non-Dirac bands realized quantum anomalous Hall effect

The quantum anomalous Hall effect is a intriguing quantum state which exhibits the chiral edge states in the absence of magnetic field. While the search for quantum anomalous Hall insulators is still active, the researchers mainly search for the systems containing magnetic atom. Here, based on first-principles density functional theory, we predict a new family of chern insulators with fully spin-polarized quadratic px;y non-Dirac bands in the alkali earth metal BaX (X = Si, Ge, Sn) system. We show that BaX monolayer has a half-metallic ferromagnetic ground state. The ferromagnetism is mainly originated from the p orbitals of Si, Ge and Sn atoms. The 2D BaSn monolayer exhibits a large magnetocrystalline anisotropic energy of 12.20 meV/cell and a nontrivial band gap of 159.10 meV. Interestingly, both the spin polarization of the chiral edge currents and the sign of Chern number can be tuned by doping. Furthermore, the 4 % compressive strain can drive structural phase transition but the nontrivial topological properties remain reserve in the 2D BaX systems. Our findings not only extend the novel concepts but also provide fascinating opportunities for the realization of quantum anomalous Hall effect experimentally.

preprint2014arXiv

Interface control of ferroelectricity in LaNiO3-BaTiO3 superlattices

LaNiO$_{3}$-BaTiO$_{3}$ superlattices with different types of interfaces are studied from first-principles density-functional theory. It is revealed that the ferroelectricity in the superlattice with (NiO$_2$)$^-$/(BaO)$^0$ interfaces is enhanced from that of the superlattice with (LaO)$^+$/(TiO$_2$)$^0$ interfaces. The origin lies at the polar discontinuity at the interface, which makes the holes localized within the (NiO$_2$)$^-$/(BaO)$^0$ interface, but drives a penetration of electrons into BaTiO$_3$ component near (LaO)$^+$/(TiO$_2$)$^0$ interface. Our calculations demonstrate an effective avenue to the robust ferroelectricity in BaTiO$_3$ ultrathin films.

preprint2014arXiv

Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions

Current-voltage characteristics and $P-E$ loops are simulated in SrRuO$_{3}$/BaTiO$_{3}$/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of the positive coercive field and the negative coercive field are found, which are induced by the asymmetricity of interface dipoles. A complete J-V curve of the junction is shown for different barrier thickness, and the effect of the magnitude of interfacial polarization on the tunneling current is also investigated.

preprint2013arXiv

Emergent topological and half semimetallic Dirac Fermions at oxide interfaces

It is highly desirable to combine recent advances in the topological quantum phases with technologically relevant materials. Chromium dioxide (CrO2) is a half-metallic material, widely used in high-end data storage applications. Using first principles calculations, we show via interfacial orbital design that a novel class of half semi-metallic Dirac electronic phase emerges at the interface CrO2 with TiO2 in both thin film and superlattice configurations, with four spin-polarized Dirac points in momentum-space (k-space) band structure. When the spin and orbital degrees of freedom are allowed to couple, the CrO2/TiO2 superlattice becomes a Chern insulator without external fields or additional doping. With topological gaps equivalent to 43 Kelvin and a Chern number 2, the ensuing quantization of Hall conductance to 2e^2/h will enable potential development of these highly industrialized oxides for applications in topologically high fidelity data storage and energy-efficient electronic and spintronic devices.