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Tian-Yi Cai

Tian-Yi Cai contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Two-dimensional transition metal oxides Mn2O3 realized quantum anomalous Hall effect

The quantum anomalous Hall effect is a intriguing topological nontrivial phase arising from spontaneous magnetization and spin-orbit coupling. However, the tremendously harsh realizing requirements of the quantum anomalous Hall effects in magnetic topological insulators of Cr or V-doped (Bi,Sb)2Te3 film, hinder its practical applications. Here, we use first principles calculations to predict that the three Mn2O3 structure is an intrinsic ferromagnetic Chern insulator. Remarkably, a quantum anomalous Hall phase of Chern number C = -2 is found, and there are two corresponding gapless chiral edge states appearing inside the bulk gap. More interestingly, only a small tensile strain is needed to induce the phase transition from Cmm2 and C222 phase to P6/mmm phase. Meanwhile, a topological quantum phase transition between a quantum anomalous Hall phase and a trivial insulating phase can be realize. The combination of these novel properties renders the two-dimensional ferromagnet a promising platform for high effciency electronic and spintronic applications.

preprint2019arXiv

Fully spin-polarized quadratic non-Dirac bands realized quantum anomalous Hall effect

The quantum anomalous Hall effect is a intriguing quantum state which exhibits the chiral edge states in the absence of magnetic field. While the search for quantum anomalous Hall insulators is still active, the researchers mainly search for the systems containing magnetic atom. Here, based on first-principles density functional theory, we predict a new family of chern insulators with fully spin-polarized quadratic px;y non-Dirac bands in the alkali earth metal BaX (X = Si, Ge, Sn) system. We show that BaX monolayer has a half-metallic ferromagnetic ground state. The ferromagnetism is mainly originated from the p orbitals of Si, Ge and Sn atoms. The 2D BaSn monolayer exhibits a large magnetocrystalline anisotropic energy of 12.20 meV/cell and a nontrivial band gap of 159.10 meV. Interestingly, both the spin polarization of the chiral edge currents and the sign of Chern number can be tuned by doping. Furthermore, the 4 % compressive strain can drive structural phase transition but the nontrivial topological properties remain reserve in the 2D BaX systems. Our findings not only extend the novel concepts but also provide fascinating opportunities for the realization of quantum anomalous Hall effect experimentally.