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Researcher profile

Sheng Ju

Sheng Ju contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2014arXiv

Interface control of ferroelectricity in LaNiO3-BaTiO3 superlattices

LaNiO$_{3}$-BaTiO$_{3}$ superlattices with different types of interfaces are studied from first-principles density-functional theory. It is revealed that the ferroelectricity in the superlattice with (NiO$_2$)$^-$/(BaO)$^0$ interfaces is enhanced from that of the superlattice with (LaO)$^+$/(TiO$_2$)$^0$ interfaces. The origin lies at the polar discontinuity at the interface, which makes the holes localized within the (NiO$_2$)$^-$/(BaO)$^0$ interface, but drives a penetration of electrons into BaTiO$_3$ component near (LaO)$^+$/(TiO$_2$)$^0$ interface. Our calculations demonstrate an effective avenue to the robust ferroelectricity in BaTiO$_3$ ultrathin films.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions

Current-voltage characteristics and $P-E$ loops are simulated in SrRuO$_{3}$/BaTiO$_{3}$/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of the positive coercive field and the negative coercive field are found, which are induced by the asymmetricity of interface dipoles. A complete J-V curve of the junction is shown for different barrier thickness, and the effect of the magnitude of interfacial polarization on the tunneling current is also investigated.

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preprint2013arXiv

Oxygen-Vacancy-Induced Antiferromagnetism to Ferromagnetism Transformation in Multiferroic Thin Films

Oxygen vacancies (VOs) effects on magnetic ordering in Eu0.5Ba0.5TiO3-δ (EBTO3-δ) thin films have been investigated using a combination of experimental measurements and first-principles density-functional calculations. Two kinds of EBTO3-δthin films with different oxygen deficiency have been fabricated. A nuclear resonance backscattering spectrometry technique has been used to quantitatively measure contents of the VOs. Eu0.5Ba0.5TiO3 ceramics have been known to exhibit ferroelectric (FE) and G-type antiferromagnetic (AFM) properties. While, a ferromagnetic (FM) behavior with a Curie temperature of 1.85 K has been found in the EBTO3-δ thin films. Spin-polarized Ti3+ ions, which originated from the VOs, has been proven to mediate a FM coupling between the local Eu 4f spins and were believed to be responsible for the great change of the magnetic ordering. Our work opens up a new avenue for developing FM-FE materials by manipulating the oxygen deficiency in AFM-FE multiferroics.

0 citations0 reviewsNo code linkedOpen access