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Yin-Zhong Wu

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Published work

7 published item(s)

preprint2015arXiv

Expansion dynamics in a one-dimensional hard-core boson model with three-body interactions

Using the adaptive time-dependent density matrix renormalization group method, we numerically investigate the expansion dynamics of bosons in a one-dimensional hard-core boson model with three-body interactions. It is found that the bosons expand ballistically with weak interaction, which are obtained by local density and the radius $R_n$. It is shown that the expansion velocity $V$, obtained from $R_n=Vt$, is dependent on the number of bosons. As a prominent result, the expansion velocity decreases with the enhancement of three-body interaction. We further study the dynamics of the system, which quenches from the ground state with two-thirds filling, the results indicate the expansion is also ballistic in the gapless phase regime. It could help us detect the phase transition in the system.

preprint2014arXiv

Interface control of ferroelectricity in LaNiO3-BaTiO3 superlattices

LaNiO$_{3}$-BaTiO$_{3}$ superlattices with different types of interfaces are studied from first-principles density-functional theory. It is revealed that the ferroelectricity in the superlattice with (NiO$_2$)$^-$/(BaO)$^0$ interfaces is enhanced from that of the superlattice with (LaO)$^+$/(TiO$_2$)$^0$ interfaces. The origin lies at the polar discontinuity at the interface, which makes the holes localized within the (NiO$_2$)$^-$/(BaO)$^0$ interface, but drives a penetration of electrons into BaTiO$_3$ component near (LaO)$^+$/(TiO$_2$)$^0$ interface. Our calculations demonstrate an effective avenue to the robust ferroelectricity in BaTiO$_3$ ultrathin films.

preprint2014arXiv

Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions

Current-voltage characteristics and $P-E$ loops are simulated in SrRuO$_{3}$/BaTiO$_{3}$/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of the positive coercive field and the negative coercive field are found, which are induced by the asymmetricity of interface dipoles. A complete J-V curve of the junction is shown for different barrier thickness, and the effect of the magnitude of interfacial polarization on the tunneling current is also investigated.

preprint2014arXiv

Pinned interface dipole-induced tunneling electroresistance in ferroelectric tunnel junctions

Based on the structure predicted in a ferroelectric tunnel junction in the resent density functional theory study, we investigate the electron transport through the FTJ with asymmetric interfaces, i.e., one interface dipole is pinned and the other interface dipole is switchable. Tuneling electroresistance can be induced due to the nonswitchable interface dipole in FTJs with symmetric electrodes. Compared with the dependence relationship between TER and the polarization of switchable interface, TER is not sensitive to the variation of the polarization of pinned interface. A large TER can be achieved when the pinned polarization points to the ferroelectric film and low interface dielectric constants. In addition, effect of electrode on TER in the structure is also discussed.

preprint2012arXiv

Quantum discord and entanglement in Heisenberg XXZ spin chain after quenches

Using the adaptive time-dependent density-matrix renormalization group method, the dynamics of entanglement and quantum discord of a one-dimensional spin-1/2 XXZ chain is studied when anisotropic interaction quenches are applied at different temperatures. The dynamics of the quantum discord and pairwise entanglement between the nearest qubits shows that the entanglement and quantum discord will first oscillate and then approach to a constant value. The quantum discord can be used to predict the quantum phase transition, while the entanglement cannot.

preprint2009arXiv

Interfacial effects on the polarization of $BiFeO_{3}$ films

By considering an interfacial layer between the electrode and the $BiFeO_{3}$($BFO$) layer, the polarization and the hysteresis behavior of $BFO$ film are simulated. It is found that the non-ferroelectric interface will increase the coercive field, and remarkably suppress the polarization of the ultrathin film under low applied fields. Due to the competition between the interfacial effect and the internal compressive stress, the maximum polarization on the P-E loop of a $BFO$ film can be independent on the film thickness under an adequate applied field.

preprint2001arXiv

Long-range Effect on the Curie Temperature of Ferroelectric Films

In this paper, the Curie temperature of ferroelectric films is studied using spin-1/2 transverse Ising model with long-range interaction within the framework of the effective-field theory. The dependence of the Curie temperature on the thickness of the film, the surface interaction and the transverse field were investigated. It is assumed that the long-range interaction decays with the distance between the pseudo-spins as a power law. The dependence of the Curie temperature and the critical transverse field on the long-range exponent are obtained.