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Researcher profile

Thomas Weimann

Thomas Weimann contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciBiological Physicscond-mat.softphysics.app-ph

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Published work

11 published item(s)

preprint2026arXiv

Ultrasensitive Real-Time Detection of SARS-CoV-2 Proteins with Arrays of Biofunctionalized Graphene Field-Effect Transistors

With the growing interest in graphene field-effect transistors (GFETs) for biosensing applications, there is a strong demand for strategies enabling flexible and multiplexed biofunctionalization, as well as highly parallel, real-time electronic readout integrated with microfluidic control. Here we present a methodology that addresses these challenges by enabling real-time, parallel monitoring of multiple GFETs integrated on a single microfabricated chip within an automated electronic and microfluidic platform. We demonstrate the capabilities of this approach through ultrasensitive detection of the SARS-CoV-2 spike (S) and nucleocapsid (N) proteins. GFET chips are functionalized via van der Waals assembly using 1 nm-thick molecular two-dimensional (2D) materials - carbon nanomembranes - which enable multiplexed biofunctionalization. The chips are integrated into a custom-developed microelectronic and microfluidic system that allows parallel, real-time, and automated measurements of 15 GFETs. We present in situ biofunctionalization of the GFETs with antibodies, followed by highly specific detection of the S- and N-proteins with limits of detection down to 10 aM and a dynamic range spanning four orders of magnitude. Owing to its versatility, the presented methodology is readily adaptable for sensing a wide range of biological and chemical targets.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Grazing incidence-X-ray fluorescence for a dimensional and elemental characterization of well-ordered nanostructures

The increasing importance of well-controlled ordered nanostructures on surfaces represents a challenge for existing metrology techniques. To develop such nanostructures and monitor complex processing constraints fabrication, both a dimensional reconstruction of nanostructures and a characterization (ideally a quantitative characterization) of their composition is required. In this work, we present a soft X-ray fluorescence-based methodology that allows both of these requirements to be addressed at the same time. By applying the grazing-incidence X-ray fluorescence technique and thus utilizing the X-ray standing wave field effect, nanostructures can be investigated with a high sensitivity with respect to their dimensional and compositional characteristics. By varying the incident angles of the exciting radiation, element-sensitive fluorescence radiation is emitted from different regions inside the nanoobjects. By applying an adequate modeling scheme, these datasets can be used to determine the nanostructure characteristics. We demonstrate these capabilities by performing an element-sensitive reconstruction of a lamellar grating made of Si$_3$N$_4$, where GIXRF data for the O-K$α$ and N-K$α$ fluorescence emission allows a thin oxide layer to be reconstructed on the surface of the grating structure. In addition, we employ the technique also to three dimensional nanostructures and derive both dimensional and compositional parameters in a quantitative manner.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Functional single-layer graphene sheets from aromatic monolayers

We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic and spectroscopic techniques and by electrical transport measurements. As substrates we successfully use Cu(111) single crystals and the technologically relevant polycrystalline copper foils.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A self-referenced single-electron quantized-current source

With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnelling of electrons. However, the stochastic nature of quantum mechanical tunnelling intrinsically evokes uncontrolled deviations from the nominally quantized current. Alternatively, the counting of electrons [15, 16] has been explored but is severely limited in current amplitude and uncertainty by the low detector bandwidth. The late M. Wulf proposed [17] that this fundamental problem of electrical quantum metrology could be overcome by combining serial single-electron pumps with charge detectors allowing the generation of a quantized current and the in-situ detection of its stochastic deviations. Here, we experimentally demonstrate such quantized-current generation with in-situ detection of tunnelling errors at low frequencies and a reduction of the total current uncertainty by more than one order of magnitude. After frequency scaling this should enable a validated primary standard for the redefined SI base unit Ampere.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Counting statistics for electron capture in a dynamic quantum dot

We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model. We identify the athermal capturing mechanism in our sample, testifying to the high precision of our combined theoretical and experimental methods. The distinction between the capturing mechanisms allows to derive efficient experimental strategies for improving the initialization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Precision quantization of Hall resistance in transferred graphene

We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10 \muA. While such performance had previously only been achieved with epitaxially grown graphene, our experiments demonstrate that transfer steps, inevitable for exfoliated graphene or graphene grown by chemical vapor deposition (CVD), are compatible with the requirements of high quality quantum resistance standards.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Conversion of self-assembled monolayers into nanocrystalline graphene: Structure and electric transport

Graphene-based materials have been suggested for applications ranging from nanoelectronics to nanobiotechnology. However, the realization of graphene-based technologies will require large quantities of free-standing two-dimensional (2D) carbon materials with tuneable physical and chemical properties. Bottom-up approaches via molecular self-assembly have great potential to fulfil this demand. Here, we report on the fabrication and characterization of graphene made by electron-radiation induced cross-linking of aromatic self-assembled monolayers (SAMs) and their subsequent annealing. In this process, the SAM is converted into a nanocrystalline graphene sheet with well defined thickness and arbitrary dimensions. Electric transport data demonstrate that this transformation is accompanied by an insulator to metal transition that can be utilized to control electrical properties such as conductivity, electron mobility and ambipolar electric field effect of the fabricated graphene sheets. The suggested route opens broad prospects towards the engineering of free-standing 2D carbon materials with tuneable properties on various solid substrates and on holey substrates as suspended membranes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Graphene p-n junction Arrays as Quantum-Hall Resistance Standards

We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few \muA.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magneto-Transport Properties of Exfoliated Graphene on GaAs

We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs multilayer, designed to render the exfoliated graphene flakes visible, also provides the required back-gate insulation. Good tuneability of the graphene carrier density is obtained, and the typical Dirac resistance characteristic is observed despite the limited height of the multilayer barrier compared to the usual SiO2 oxide barrier on doped silicon. In a magnetic field weak localization effects as well as the quantum Hall effect of a graphene monolayer are studied.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

One nanometer thin carbon nanosheets with tunable conductivity and stiffness

We present a new route for the fabrication of ultrathin (~1 nm) carbon films and membranes, whose electrical behavior can be tuned from insulating to conducting. Self-assembled monolayers of biphenyls are cross-linked by electrons, detached from the surfaces and subsequently pyrolized. Above 1000K, the cross-linked aromatic monolayer forms a mechanically stable graphitic phase. The transition is accompanied by a drop of the sheet resistivity from ~10^8 to ~10^2 kOhm/sq and a mechanical stiffening of the nanomembranes from ~10 to ~50 GPa. The technical applicability of the nanosheets is demonstrated by incorporating them into a microscopic pressure sensor

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Non-adiabatic pumping of single electrons affected by magnetic fields

Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pumping one single electron is traced back to the diverse tunneling processes into and out-of the dot. Extending the theory to multiple electrons allows to investigate conveniently the pumping characteristics in an applied magnetic field. In this way, a qualitatively different behavior between pumping even or odd numbers of electrons is extracted.

0 citations0 reviewsNo code linkedOpen access