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Klaus Pierz

Klaus Pierz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallphysics.opticscond-mat.mtrl-scicond-mat.otherphysics.app-ph

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Published work

19 published item(s)

preprint2020arXiv

Silicon carbide stacking-order-induced doping variation in epitaxial graphene

Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the buffer layer. In this work, we evidence that this effect is also related to the specific underlying SiC terrace. We fabricated a periodic sequence of non-identical SiC terraces, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surface-sensitive methods. We attribute this correlation to a proximity effect of the SiC termination-dependent polarization doping on the overlying graphene layer. Our findings open a new approach for a nano-scale doping-engineering by self-patterning of epitaxial graphene and other 2D layers on dielectric polar substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Substrate induced nanoscale resistance variation in epitaxial graphene

Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances associated with a localized defect is still an open issue. Here, we quantitatively investigate the local transport properties of graphene prepared by polymer assisted sublimation growth (PASG) using scanning tunneling potentiometry. PASG graphene is characterized by a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H-SiC substrate as well as with the distance between the graphene sheet and the substrate. Our results experimentally quantify the strong impact of the graphene-substrate interaction on the local transport properties of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the theory of Kubakaddi [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and the quantum Hall breakdown sets in.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ultrafast magneto-photocurrents as probe of anisotropy relaxation in GaAs

We induce ultrafast photocurrents in a GaAs crystal exposed to a magnetic field by optical femtosecond excitation. The magneto-photocurrents are studied by time-resolved detection of the simultaneously emitted THz radiation. We find that their dynamics differ considerably from the dynamics of other photocurrents which are expected to follow the temporal shape of the optical intensity. We attribute this difference to the influence of carrier-anisotropy relaxation on the magneto-photocurrents. Our measurements show that the anisotropy relaxation for carrier densities ranging between $10^{16}$ cm$^{-3}$ and $5 \times 10^{17}$ cm$^{-3}$ occurs on two different time scales. While the slow time constant is approximately 100 fs long and most likely governed by electron-phonon scattering, the fast time constant is on the order of 10 fs and presumably linked to the valence band. Our studies not only help to better understand the microscopic origins of optically induced currents but - being even more important - show that magneto-photocurrents can be employed as novel probe of anisotropy relaxation in GaAs. This technique is applicable to all non-centrosymmetric bulk semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step flow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5*10(-9) which qualifies this method for the fabrication of electrical quantum standards.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Validation of a quantized-current source with 0.2 ppm uncertainty

We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to $I=ef$ with $e$ the elementary charge was confirmed at $f=545$ MHz with a total relative uncertainty of 0.2 ppm, improving the state of the art by about a factor of 5. For the first time, the accuracy of a possible future quantum current standard based on single-electron transport was experimentally validated to be better than the best realization of the ampere within the present SI.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Optical Spin Noise of a Single Hole Spin Localized in an (InGa)As Quantum Dot

We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light intensity dependent studies reveal even at low magnetic fields a strong magnetic field dependence of the longitudinal heavy hole spin relaxation time with an extremely long $T_1$ of $\ge$ 180 $μ$s at 31 mT and 5 K. The wavelength dependence of the spin noise power discloses for finite light intensities an inhomogeneous single quantum dot spin noise spectrum which is explained by charge fluctuations in the direct neighborhood of the quantum dot. The charge fluctuations are corroborated by the distinct intensity dependence of the effective spin relaxation rate.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Partitioning of on-demand electron pairs

We demonstrate the high fidelity splitting of electron pairs emitted on demand from a dynamic quantum dot by an electronic beam splitter. The fidelity of pair splitting is inferred from the coincidence of arrival in two detector paths probed by a measurement of the partitioning noise. The emission characteristic of the on-demand electron source is tunable from electrons being partitioned equally and independently to electron pairs being split with a fidelity of 90%. For low beam splitter transmittance we further find evidence of pair bunching violating statistical expectations for independent fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A self-referenced single-electron quantized-current source

With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnelling of electrons. However, the stochastic nature of quantum mechanical tunnelling intrinsically evokes uncontrolled deviations from the nominally quantized current. Alternatively, the counting of electrons [15, 16] has been explored but is severely limited in current amplitude and uncertainty by the low detector bandwidth. The late M. Wulf proposed [17] that this fundamental problem of electrical quantum metrology could be overcome by combining serial single-electron pumps with charge detectors allowing the generation of a quantized current and the in-situ detection of its stochastic deviations. Here, we experimentally demonstrate such quantized-current generation with in-situ detection of tunnelling errors at low frequencies and a reduction of the total current uncertainty by more than one order of magnitude. After frequency scaling this should enable a validated primary standard for the redefined SI base unit Ampere.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

All-optically induced currents resulting from frequency modulated coherent polarization

We employ polarization-shaped ultrafast optical pulses to generate photocurrents which only arise if the optically induced coherent polarization is frequency modulated. This frequency modulation is obtained via detuned excitation of light-hole excitons in (110)-oriented GaAs quantum wells. The observed photocurrents vanish for resonant excitation of excitons and reverse their direction with a change of the sign of detuning. Moreover, the currents do not exist for continuous-wave excitation. Our work reveals the existence of a new class of photocurrents and visualizes the complexity of current response tensors. This is helpful for the better understanding of optically induced microscopic transport in semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Broadband ferromagnetic resonance characterization of GaMnAs thin films

The precessional magnetization dynamics of GaMnAs thin films are characterized by broadband network analyzer ferromagnetic resonance (FMR) in a coplanar geometry at cryogenic temperatures. The FMR frequencies are characterized as function of in-plane field angle and field amplitude. Using an extended Kittel model of the FMR dispersion the magnetic film parameters such as saturation magnetization and anisotropies are derived. The modification of the FMR behavior and of the magnetic parameters of the thin film upon annealing is analyzed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

All-optically induced ultrafast photocurrents: Beyond the instantaneous coherent response

It is demonstrated that the non-instantaneous response of the optically induced coherent polarization tremendously influences the real-space shift of electronic charges in semiconductors. The possibility to coherently control this real-space shift with temporally non-overlapping excitation pulses allows for the observation of a new type of shift current, which only exists for certain polarization-shaped excitation pulses and vanishes in the continuous-wave limit. In contrast to previously studied shift currents, the new current requires a phase mismatch between two orthogonal transition dipole moments and leads, within a nonlinear second-order description, to a tensor which is antisymmetric with respect to the order of the two exciting electric field amplitudes. These observations, which can even be made at room temperature and are expected to occur in a variety of semiconductor crystal classes, contribute to a better understanding of light-matter interaction involving degenerate bands. Thus, they are expected to prove important for future studies of coherent and nonlinear optical effects in semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Counting statistics for electron capture in a dynamic quantum dot

We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model. We identify the athermal capturing mechanism in our sample, testifying to the high precision of our combined theoretical and experimental methods. The distinction between the capturing mechanisms allows to derive efficient experimental strategies for improving the initialization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Impact of current paths on measurement of tunneling magnetoresistance and spin torque critical current densities in GaMnAs-based magnetic tunnel junctions

GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal. Interestingly, a similar TMR signature is observed in the in-plane transport signal. Here, low-ohmic shunting of the MTJ by the top contact results in significant perpendicular-to-plane current paths. This effect allows the determination of TMR ratios of MTJs based on a simplified in-plane measurement. However, the same effect can lead to an inaccurate determination of resistance area products and spin torque critical current densities from perpendicular-to-plane magnetotransport experiments on MTJ pillar structures.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Precision quantization of Hall resistance in transferred graphene

We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10 \muA. While such performance had previously only been achieved with epitaxially grown graphene, our experiments demonstrate that transfer steps, inevitable for exfoliated graphene or graphene grown by chemical vapor deposition (CVD), are compatible with the requirements of high quality quantum resistance standards.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A quantized current source with mesoscopic feedback

We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge variation on the island using a nearby charge detector. Finally, the charge feedback signal clearly evidences loading into excited states of the dynamic quantum dot during single-electron pump operation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Integrated quantized electronics: a semiconductor quantized voltage source

The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their broad range of further applications e.g. in integrated circuits, quantized voltage generation by a semiconductor device has never been obtained. Here we report a semiconductor quantized voltage source generating quantized voltages Vout = f\cdot(h/e). It is based on an integrated quantized circuit of a single electron pump operated at pumping frequency f and a quantum Hall device monolithically integrated in series. The output voltages of several \muV are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrological triangle. Furthermore it represents a universal electrical quantum reference allowing to generate quantized values of the three most relevant electrical units of voltage, current, and resistance based on fundamental constants using a single device.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magneto-Transport Properties of Exfoliated Graphene on GaAs

We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs multilayer, designed to render the exfoliated graphene flakes visible, also provides the required back-gate insulation. Good tuneability of the graphene carrier density is obtained, and the typical Dirac resistance characteristic is observed despite the limited height of the multilayer barrier compared to the usual SiO2 oxide barrier on doped silicon. In a magnetic field weak localization effects as well as the quantum Hall effect of a graphene monolayer are studied.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Non-adiabatic pumping of single electrons affected by magnetic fields

Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pumping one single electron is traced back to the diverse tunneling processes into and out-of the dot. Extending the theory to multiple electrons allows to investigate conveniently the pumping characteristics in an applied magnetic field. In this way, a qualitatively different behavior between pumping even or odd numbers of electrons is extracted.

0 citations0 reviewsNo code linkedOpen access