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Bernd Kaestner

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cond-mat.mes-hall cond-mat.str-el

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preprint2022arXiv

Controlling the error mechanism in a tunable-barrier non-adiabatic charge pump by dynamic gate compensation

Single-electron pumps based on tunable-barrier quantum dots are the most promising candidates for a direct realization of the unit ampere in the recently revised SI: they are simple to operate and show high precision at high operation frequencies. The current understanding of the residual transfer errors at low temperature is based on the evaluation of backtunneling effects in the decay cascade model. This model predicts a strong dependence on the ratio of the time dependent changes in the quantum dot energy and the tunneling barrier transparency. Here we employ a two-gate operation scheme to verify this prediction and to demonstrate control of the backtunneling error. We derive and experimentally verify a quantitative prediction for the error suppression, thereby confirming the basic assumptions of the backtunneling (decay cascade) model. Furthermore, we demonstrate a controlled transition from the backtunneling dominated regime into the thermal (sudden decoupling) error regime. The suppression of transfer errors by several orders of magnitude at zero magnetic field was additionally verified by a sub-ppm precision measurement.

preprint2015arXiv

Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property --- the universality and invariance of the elementary charge. A charge pump generates a net current from periodic external modulation of parameters controlling a nanostructure connected to source and drain leads; in the regime of quantized pumping the current varies in steps of $q_e f$ as function of control parameters, where $q_e$ is the electron charge and $f$ is the frequency of modulation. In recent years, robust and accurate quantized charge pumps have been developed based on semiconductor quantum dots with tunable tunnel barriers. These devices allow modulation of charge exchange rates between the dot and the leads over many orders of magnitude and enable trapping of a precise number of electrons far away from equilibrium with the leads. The corresponding non-adiabatic pumping protocols focus on understanding of separate parts of the pumping cycle associated with charge loading, capture and release. In this report we review realizations, models and metrology applications of quantized charge pumps based on tunable-barrier quantum dots.

preprint2013arXiv

A self-referenced single-electron quantized-current source

With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnelling of electrons. However, the stochastic nature of quantum mechanical tunnelling intrinsically evokes uncontrolled deviations from the nominally quantized current. Alternatively, the counting of electrons [15, 16] has been explored but is severely limited in current amplitude and uncertainty by the low detector bandwidth. The late M. Wulf proposed [17] that this fundamental problem of electrical quantum metrology could be overcome by combining serial single-electron pumps with charge detectors allowing the generation of a quantized current and the in-situ detection of its stochastic deviations. Here, we experimentally demonstrate such quantized-current generation with in-situ detection of tunnelling errors at low frequencies and a reduction of the total current uncertainty by more than one order of magnitude. After frequency scaling this should enable a validated primary standard for the redefined SI base unit Ampere.

preprint2012arXiv

Counting statistics for electron capture in a dynamic quantum dot

We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model. We identify the athermal capturing mechanism in our sample, testifying to the high precision of our combined theoretical and experimental methods. The distinction between the capturing mechanisms allows to derive efficient experimental strategies for improving the initialization.

preprint2011arXiv

A quantized current source with mesoscopic feedback

We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge variation on the island using a nearby charge detector. Finally, the charge feedback signal clearly evidences loading into excited states of the dynamic quantum dot during single-electron pump operation.

preprint2011arXiv

Integrated quantized electronics: a semiconductor quantized voltage source

The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their broad range of further applications e.g. in integrated circuits, quantized voltage generation by a semiconductor device has never been obtained. Here we report a semiconductor quantized voltage source generating quantized voltages Vout = f\cdot(h/e). It is based on an integrated quantized circuit of a single electron pump operated at pumping frequency f and a quantum Hall device monolithically integrated in series. The output voltages of several \muV are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrological triangle. Furthermore it represents a universal electrical quantum reference allowing to generate quantized values of the three most relevant electrical units of voltage, current, and resistance based on fundamental constants using a single device.

preprint2010arXiv

Universal decay cascade model for dynamic quantum dot initialization

Dynamic quantum dots can be formed by time-dependent electrostatic potentials in nanoelectronic devices, such as gate- or surface-acoustic-wave-driven electron pumps. Ability to control the number of captured electrons with high precision is required for applications in fundamental metrology and quantum information processing. In this work we propose and quantify a scheme to initialize quantum dots with a controllable number of electrons. It is based on the stochastic decrease in the electron number of a shrinking dynamic quantum dot and is described by a nuclear decay cascade model with "isotopes" being different charge states of the dot. Unlike the natural nuclei, the artificial confinement is time-dependent and tunable, so the probability distribution for the final "stable isotopes" depends on the external gate voltage. We derive an explicit fitting formula to extract the sequence of decay rate ratios from the measurements of averaged current in a periodically driven device. This provides a device-specific fingerprint which allows to compare different devices and architectures, and predict the upper limits of initialization accuracy from low precision measurements.

preprint2009arXiv

Non-adiabatic pumping of single electrons affected by magnetic fields

Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pumping one single electron is traced back to the diverse tunneling processes into and out-of the dot. Extending the theory to multiple electrons allows to investigate conveniently the pumping characteristics in an applied magnetic field. In this way, a qualitatively different behavior between pumping even or odd numbers of electrons is extracted.

preprint2005arXiv

Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system

We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the Rashba split heavy hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel a non zero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system.