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Thiago A. de Assis

Thiago A. de Assis appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.stat-mech

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Published work

5 published item(s)

preprint2020arXiv

Modeling the Field Emission Enhancement Factor for Capped Carbon Nanotubes using the Induced Electron Density

In many field electron emission experiments on single-walled carbon nanotubes (SWCNTs), the SWCNT stands on one of two well-separated parallel plane plates, with a macroscopic field FM applied between them. For any given location "L" on the SWCNT surface, a field enhancement factor (FEF) is defined as $F_{\rm{L}}$/$F_{\rm{M}}$, where $F_{\rm{L}}$ is a local field defined at "L". The best emission measurements from small-radii capped SWCNTs exhibit characteristic FEFs that are constant (i.e., independent of $F_{\rm{M}}$). This paper discusses how to retrieve this result in quantum-mechanical (as opposed to classical electrostatic) calculations. Density functional theory (DFT) is used to analyze the properties of two short, floating SWCNTS, capped at both ends, namely a (6,6) and a (10,0) structure. Both have effectively the same height ($\sim 5.46$ nm) and radius ($\sim 0.42$ nm). It is found that apex values of local induced FEF are similar for the two SWCNTs, are independent of $F_{\rm{M}}$, and are similar to FEF-values found from classical conductor models. It is suggested that these induced-FEF values relate to the SWCNT longitudinal system polarizabilities, which are presumed similar. The DFT calculations also generate "real", as opposed to ``induced", potential-energy (PE) barriers for the two SWCNTs, for FM-values from 3 V/$μ$m to 2 V/nm. PE profiles along the SWCNT axis and along a parallel ``observation line" through one of the topmost atoms are similar. At low macroscopic fields the details of barrier shape differ for the two SWCNT types. Even for $F_{\rm{M}}=0$, there are distinct PE structures present at the emitter apex (different for the two SWCNTs); this suggests the presence of structure-specific chemically induced charge transfers and related patch-field distributions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Statistics of adatom diffusion in a model of thin film growth

We study the statistics of the number of executed hops of adatoms at the surface of films grown with the Clarke-Vvedensky (CV) model in simple cubic lattices. The distributions of this number, $N$, are determined in films with average thicknesses close to $50$ and $100$ monolayers for a broad range of values of the diffusion-to-deposition ratio $R$ and of the probability $ε$ that lowers the diffusion coefficient for each lateral neighbor. The mobility of subsurface atoms and the energy barriers for crossing step edges are neglected. Simulations show that the adatoms execute uncorrelated diffusion during the time in which they move on the film surface. In a low temperature regime, typically with $Rε\lesssim 1$, the attachment to lateral neighbors is almost irreversible, the average number of hops scales as $\langle N\rangle \sim R^{0.38\pm 0.01}$, and the distribution of that number decays approximately as $\exp\left[-\left({N/\langle N\rangle}\right)^{0.80\pm 0.07}\right]$. Similar decay is observed in simulations of random walks in a plane with randomly distributed absorbing traps and the estimated relation between $\langle N\rangle$ and the density of terrace steps is similar to that observed in the trapping problem, which provides a conceptual explanation of that regime. As the temperature increases, $\langle N\rangle$ crosses over to another regime when $Rε^{3.0\pm 0.3}\sim 1$, which indicates high mobility of all adatoms at terrace borders. The distributions $P\left( N\right)$ change to simple exponential decays, due to the constant probability for an adatom to become immobile after being covered by a new deposited layer. At higher temperatures, the surfaces become very smooth and $\langle N\rangle \sim Rε^{1.85\pm 0.15}$, which is explained by an analogy with submonolayer growth.

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preprint2019arXiv

On the quantum mechanics of how an ideal carbon nanotube field emitter can exhibit a constant field enhancement factor

Measurements of current-voltage characteristics from ideal carbon nanotube (CNT) field electron emitters of small apex radius have shown that these emitters can exhibit a linear Fowler-Nordheim (FN) plot [e.g., Dean and Chalamala, Appl. Phys. Lett., 76, 375, 2000]. From such a plot, a constant (voltage-independent) characteristic field enhancement factor (FEF) can be deduced. Over fifteen years later, this experimental result has not yet been convincingly retrieved from first-principles electronic structure calculations, or more generally from quantum mechanics (QM). On the contrary, several QM calculations have deduced that the characteristic FEF should be a function of the macroscopic field applied to the CNT. This apparent contradiction between experiment and QM theory has been an unexplained feature of CNT emission science, and has raised doubts about the ability of existing QM models to satisfactorily describe experimental CNT emission behavior. In this work we demonstrate, by means of a density functional theory analysis of single-walled CNTs "floating" in an applied macroscopic field, the following significant result. This is that agreement between experiment, classical-conductor CNT models and QM calculations can be achieved if the latter are used to calculate (from the "real" total-charge-density distributions initially obtained) the distributions of $\textit{induced}$ charge-density, induced local fields and induced local FEFs. The present work confirms, more reliably and in significantly greater detail than in earlier work on a different system, that this finding applies to the common "post-on-a-conducing plane" situation of CNT field electron emission. This finding also brings out various further theoretical questions that need to be explored.

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preprint2016arXiv

Nanostructures mechanically stable with desirable characteristic field enhancement factor: a response from scale invariance in electrostatics

This work presents an accurate numerical study of the electrostatics of systems formed by individual nanostructure mounted on support substrate tip, a theoretical prototype for applications in field electron emission or for construction of tips in probe microscopy requiring high resolution. We modeled substrate tip with height $h_1$, radius $r_{1}$ and characteristic field enhancement factor (FEF) $γ_1$, and the top nanostructure with height $h_2$, radius $r_{2}<r_{1}$ and FEF $γ_2$, both hemisphere on post-like structures. Then, nanostructure mounted on support substrate tip has characteristic FEF, $γ_{C}$. Defining the relative difference $η_R \equiv (γ_{C} - γ_{1})/ (γ_{3} - γ_{1})$, where $γ_{3}$ corresponds to reference FEF for a hemisphere on post structure with radius $r_3=r_2$ and height $h_3=h_1 + h_2$, our results suggest, from numerical solution of Laplace's equation using a finite element scheme, a scaling $η_R = f(u\equivλθ^{-1})$, where $λ\equiv h_{2}/h_1$ and $θ\equiv r_1/r_2$. Given a characteristic variable $u_{c}$, we found, for $u \ll u_{c}$, a power law $η_{R} \sim u^κ$ with $κ\approx 0.55$. For $u \gg u_{c}$, $η_{R} \approx 1$ providing conditions where $γ_C \rightarrow γ_3$. As a consequence of scaling invariance, it's possible to derive a simple expression for $γ_C$, being possible to predict conditions to produce related systems with a desirable FEF and that, at the same time, are mechanically stable by presence of substrate tip. Finally, we also discuss the validity of Schottky's conjecture (SC) for these systems showing that, while to obey SC is a indicative of scale invariance, the opposite is not necessarily satisfied. This suggest that a careful analysis must be done before attribute the SC as a origin of giant FEF in experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The consequences of dependence between the formal area efficiency and the macroscopic electric field on linearity behavior in Fowler-Nordheim plots

This work presents a theoretical explanation for a crossover in the linear behavior in Fowler-Nordheim (FN) plots based on cold field electron emission (CFE) experimental data. It is characterized by a clear change in the decay rate of usually single-slope FN plots, and has been reported when non-uniform nano-emitters are subject to high macroscopic electric field $F_M$. We assume that the number of emitting spots, which defines an apparent formal area efficiency of CFE surfaces, depends on the macroscopic electric field. Non-uniformity is described by local enhancement factors $\left\{γ_j\right\}$, which are randomly assigned to each distinct emitter of a conducting CFE surface, from a discrete probability distribution $ρ{(γ_{j})}$, with $j=1,2$. It is assumed that $ρ{(γ_{1})} < ρ{(γ_{2})}$, and that $γ_{1} > γ_{2}$. The local current density is evaluated by considering a usual Schottky-Nordheim barrier. The results reproduce the two distinct slope regimes in FN plots when $F_M \in $ $[2,20]$ V/$μ$m and are analyzed by taking into account the apparent formal area efficiency, the distribution $ρ$, and the slopes in the corresponding FN plot. Finally, we remark that our results from numerical solution of Laplace's equation, for an array of conducting nano-emitters with uniform apex radii $50$ nm but different local height, supports our theoretical assumptions and could used in orthodox CFE experiments to test our predictions.

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